DE60107111D1 - Vorrichtung und verfahren zur dotierung von atomschichten - Google Patents
Vorrichtung und verfahren zur dotierung von atomschichtenInfo
- Publication number
- DE60107111D1 DE60107111D1 DE60107111T DE60107111T DE60107111D1 DE 60107111 D1 DE60107111 D1 DE 60107111D1 DE 60107111 T DE60107111 T DE 60107111T DE 60107111 T DE60107111 T DE 60107111T DE 60107111 D1 DE60107111 D1 DE 60107111D1
- Authority
- DE
- Germany
- Prior art keywords
- doping
- doping regions
- regions
- atomic layers
- substrates
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67167—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers surrounding a central transfer chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
- H01L21/67213—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one ion or electron beam chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67745—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber characterized by movements or sequence of movements of transfer devices
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US653553 | 2000-08-31 | ||
| US09/653,553 US6541353B1 (en) | 2000-08-31 | 2000-08-31 | Atomic layer doping apparatus and method |
| PCT/US2001/026079 WO2002038841A2 (en) | 2000-08-31 | 2001-08-22 | Atomic layer doping apparatus and method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE60107111D1 true DE60107111D1 (de) | 2004-12-16 |
| DE60107111T2 DE60107111T2 (de) | 2005-10-20 |
Family
ID=24621343
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE60107111T Expired - Lifetime DE60107111T2 (de) | 2000-08-31 | 2001-08-22 | Vorrichtung und verfahren zur dotierung von atomschichten |
Country Status (9)
| Country | Link |
|---|---|
| US (3) | US6541353B1 (de) |
| EP (1) | EP1335998B1 (de) |
| JP (1) | JP2004513525A (de) |
| KR (1) | KR100564977B1 (de) |
| CN (1) | CN1267589C (de) |
| AT (1) | ATE282101T1 (de) |
| AU (1) | AU2002236430A1 (de) |
| DE (1) | DE60107111T2 (de) |
| WO (1) | WO2002038841A2 (de) |
Families Citing this family (89)
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| US6953730B2 (en) * | 2001-12-20 | 2005-10-11 | Micron Technology, Inc. | Low-temperature grown high quality ultra-thin CoTiO3 gate dielectrics |
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| US6800172B2 (en) * | 2002-02-22 | 2004-10-05 | Micron Technology, Inc. | Interfacial structure for semiconductor substrate processing chambers and substrate transfer chambers and for semiconductor substrate processing chambers and accessory attachments, and semiconductor substrate processor |
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| US7906393B2 (en) * | 2004-01-28 | 2011-03-15 | Micron Technology, Inc. | Methods for forming small-scale capacitor structures |
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-
2000
- 2000-08-31 US US09/653,553 patent/US6541353B1/en not_active Expired - Lifetime
-
2001
- 2001-08-22 AT AT01985952T patent/ATE282101T1/de not_active IP Right Cessation
- 2001-08-22 AU AU2002236430A patent/AU2002236430A1/en not_active Abandoned
- 2001-08-22 KR KR1020037003141A patent/KR100564977B1/ko not_active IP Right Cessation
- 2001-08-22 JP JP2002541151A patent/JP2004513525A/ja active Pending
- 2001-08-22 CN CNB018166695A patent/CN1267589C/zh not_active Expired - Fee Related
- 2001-08-22 DE DE60107111T patent/DE60107111T2/de not_active Expired - Lifetime
- 2001-08-22 WO PCT/US2001/026079 patent/WO2002038841A2/en active IP Right Grant
- 2001-08-22 EP EP01985952A patent/EP1335998B1/de not_active Expired - Lifetime
- 2001-10-22 US US09/982,954 patent/US20020046705A1/en not_active Abandoned
-
2002
- 2002-11-22 US US10/301,573 patent/US6746934B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| KR20030064395A (ko) | 2003-07-31 |
| CN1267589C (zh) | 2006-08-02 |
| ATE282101T1 (de) | 2004-11-15 |
| US6541353B1 (en) | 2003-04-01 |
| KR100564977B1 (ko) | 2006-03-28 |
| WO2002038841A3 (en) | 2003-05-01 |
| DE60107111T2 (de) | 2005-10-20 |
| CN1468329A (zh) | 2004-01-14 |
| JP2004513525A (ja) | 2004-04-30 |
| US6746934B2 (en) | 2004-06-08 |
| EP1335998B1 (de) | 2004-11-10 |
| US20020046705A1 (en) | 2002-04-25 |
| EP1335998A2 (de) | 2003-08-20 |
| AU2002236430A1 (en) | 2002-05-21 |
| US20030073318A1 (en) | 2003-04-17 |
| WO2002038841A2 (en) | 2002-05-16 |
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