DE60115716D1 - Weichprogrammierung und weichprogrammierverifikation von flash-speicherzellen - Google Patents

Weichprogrammierung und weichprogrammierverifikation von flash-speicherzellen

Info

Publication number
DE60115716D1
DE60115716D1 DE60115716T DE60115716T DE60115716D1 DE 60115716 D1 DE60115716 D1 DE 60115716D1 DE 60115716 T DE60115716 T DE 60115716T DE 60115716 T DE60115716 T DE 60115716T DE 60115716 D1 DE60115716 D1 DE 60115716D1
Authority
DE
Germany
Prior art keywords
soft programming
flash memory
memory cells
verification
soft
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60115716T
Other languages
English (en)
Other versions
DE60115716T2 (de
Inventor
K Yachareni
G Hamilton
Q Le
Kazuhiro Kurihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Spansion LLC
Original Assignee
Spansion LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Spansion LLC filed Critical Spansion LLC
Publication of DE60115716D1 publication Critical patent/DE60115716D1/de
Application granted granted Critical
Publication of DE60115716T2 publication Critical patent/DE60115716T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3404—Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells
    • G11C16/3409—Circuits or methods to recover overerased nonvolatile memory cells detected during erase verification, usually by means of a "soft" programming step
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3404—Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • G11C16/0475—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS] comprising two or more independent storage sites which store independent data
DE60115716T 2001-04-09 2001-12-12 Weichprogrammierung und weichprogrammierverifikation von flash-speicherzellen Expired - Lifetime DE60115716T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/829,193 US6493266B1 (en) 2001-04-09 2001-04-09 Soft program and soft program verify of the core cells in flash memory array
US829193 2001-04-09
PCT/US2001/048734 WO2002082447A2 (en) 2001-04-09 2001-12-12 Soft program and soft program verify of the core cells in flash memory array

Publications (2)

Publication Number Publication Date
DE60115716D1 true DE60115716D1 (de) 2006-01-12
DE60115716T2 DE60115716T2 (de) 2006-07-13

Family

ID=25253800

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60115716T Expired - Lifetime DE60115716T2 (de) 2001-04-09 2001-12-12 Weichprogrammierung und weichprogrammierverifikation von flash-speicherzellen

Country Status (9)

Country Link
US (1) US6493266B1 (de)
EP (1) EP1415302B1 (de)
JP (1) JP4068464B2 (de)
KR (1) KR100828196B1 (de)
CN (1) CN100365735C (de)
AU (1) AU2002230944A1 (de)
DE (1) DE60115716T2 (de)
TW (1) TW584858B (de)
WO (1) WO2002082447A2 (de)

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Also Published As

Publication number Publication date
JP2004524643A (ja) 2004-08-12
KR20030096307A (ko) 2003-12-24
US20030021155A1 (en) 2003-01-30
CN100365735C (zh) 2008-01-30
TW584858B (en) 2004-04-21
JP4068464B2 (ja) 2008-03-26
EP1415302B1 (de) 2005-12-07
EP1415302A2 (de) 2004-05-06
DE60115716T2 (de) 2006-07-13
CN1494720A (zh) 2004-05-05
KR100828196B1 (ko) 2008-05-08
US6493266B1 (en) 2002-12-10
WO2002082447A2 (en) 2002-10-17
WO2002082447A3 (en) 2003-03-06
AU2002230944A1 (en) 2002-10-21

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