DE60120254D1 - Abscheidung und thermische Behandlung von dünnen Schichten aus Mehrkomponentenoxyden von Typ ZrSnTi und HfSnTi unter Verwendung eines flüssigen lösungsmittelfreien Vorläufergemisch - Google Patents

Abscheidung und thermische Behandlung von dünnen Schichten aus Mehrkomponentenoxyden von Typ ZrSnTi und HfSnTi unter Verwendung eines flüssigen lösungsmittelfreien Vorläufergemisch

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Publication number
DE60120254D1
DE60120254D1 DE60120254T DE60120254T DE60120254D1 DE 60120254 D1 DE60120254 D1 DE 60120254D1 DE 60120254 T DE60120254 T DE 60120254T DE 60120254 T DE60120254 T DE 60120254T DE 60120254 D1 DE60120254 D1 DE 60120254D1
Authority
DE
Germany
Prior art keywords
thin films
hfsnti
zrsnti
deposition
thermal treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60120254T
Other languages
English (en)
Other versions
DE60120254T2 (de
Inventor
Yoshihide Senzaki
Arthur Kenneth Hochberg
David Allen Roberts
John Anthony Thomas Norman
Robert Mclemore Fleming
Glenn Baldwin Alers
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Air Products and Chemicals Inc
Nokia of America Corp
Original Assignee
Air Products and Chemicals Inc
Lucent Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Air Products and Chemicals Inc, Lucent Technologies Inc filed Critical Air Products and Chemicals Inc
Publication of DE60120254D1 publication Critical patent/DE60120254D1/de
Application granted granted Critical
Publication of DE60120254T2 publication Critical patent/DE60120254T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
DE60120254T 2000-03-10 2001-03-08 Abscheidung und thermische Behandlung von dünnen Schichten aus Mehrkomponentenoxyden von Typ ZrSnTi und HfSnTi unter Verwendung eines flüssigen lösungsmittelfreien Vorläufergemisch Expired - Fee Related DE60120254T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/522,634 US6500499B1 (en) 2000-03-10 2000-03-10 Deposition and annealing of multicomponent ZrSnTi and HfSnTi oxide thin films using solventless liquid mixture of precursors
US522634 2000-03-10

Publications (2)

Publication Number Publication Date
DE60120254D1 true DE60120254D1 (de) 2006-07-20
DE60120254T2 DE60120254T2 (de) 2006-09-21

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
DE60120254T Expired - Fee Related DE60120254T2 (de) 2000-03-10 2001-03-08 Abscheidung und thermische Behandlung von dünnen Schichten aus Mehrkomponentenoxyden von Typ ZrSnTi und HfSnTi unter Verwendung eines flüssigen lösungsmittelfreien Vorläufergemisch

Country Status (7)

Country Link
US (1) US6500499B1 (de)
EP (1) EP1132494B1 (de)
JP (1) JP3523211B2 (de)
KR (1) KR100398495B1 (de)
AT (1) ATE329065T1 (de)
DE (1) DE60120254T2 (de)
TW (1) TW583333B (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6503561B1 (en) * 1999-07-08 2003-01-07 Air Products And Chemicals, Inc. Liquid precursor mixtures for deposition of multicomponent metal containing materials
JP5290488B2 (ja) 2000-09-28 2013-09-18 プレジデント アンド フェロウズ オブ ハーバード カレッジ 酸化物、ケイ酸塩及びリン酸塩の気相成長
US6958302B2 (en) * 2002-12-04 2005-10-25 Micron Technology, Inc. Atomic layer deposited Zr-Sn-Ti-O films using TiI4
US7101813B2 (en) 2002-12-04 2006-09-05 Micron Technology Inc. Atomic layer deposited Zr-Sn-Ti-O films
US6887523B2 (en) * 2002-12-20 2005-05-03 Sharp Laboratories Of America, Inc. Method for metal oxide thin film deposition via MOCVD
US7183186B2 (en) 2003-04-22 2007-02-27 Micro Technology, Inc. Atomic layer deposited ZrTiO4 films
US7588988B2 (en) 2004-08-31 2009-09-15 Micron Technology, Inc. Method of forming apparatus having oxide films formed using atomic layer deposition
US7494939B2 (en) 2004-08-31 2009-02-24 Micron Technology, Inc. Methods for forming a lanthanum-metal oxide dielectric layer
KR100584783B1 (ko) 2005-02-24 2006-05-30 삼성전자주식회사 복합막 형성 방법과 이를 이용한 게이트 구조물 및 커패시터 제조 방법
US7393736B2 (en) 2005-08-29 2008-07-01 Micron Technology, Inc. Atomic layer deposition of Zrx Hfy Sn1-x-y O2 films as high k gate dielectrics
JP2007194582A (ja) 2005-12-20 2007-08-02 Tokyo Electron Ltd 高誘電体薄膜の改質方法及び半導体装置
US7972974B2 (en) 2006-01-10 2011-07-05 Micron Technology, Inc. Gallium lanthanide oxide films
US11193206B2 (en) * 2017-03-15 2021-12-07 Versum Materials Us, Llc Formulation for deposition of silicon doped hafnium oxide as ferroelectric materials

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE393967B (sv) 1974-11-29 1977-05-31 Sateko Oy Forfarande och for utforande av stroleggning mellan lagren i ett virkespaket
DE3322304A1 (de) * 1983-06-21 1985-01-03 Siemens AG, 1000 Berlin und 8000 München Streifenleitungsdopplerradar
JPH0776090B2 (ja) * 1989-07-06 1995-08-16 株式会社ライムズ ジルコニア薄膜の製造方法
US5820664A (en) 1990-07-06 1998-10-13 Advanced Technology Materials, Inc. Precursor compositions for chemical vapor deposition, and ligand exchange resistant metal-organic precursor solutions comprising same
US5204314A (en) 1990-07-06 1993-04-20 Advanced Technology Materials, Inc. Method for delivering an involatile reagent in vapor form to a CVD reactor
US5559363A (en) * 1995-06-06 1996-09-24 Martin Marietta Corporation Off-chip impedance matching utilizing a dielectric element and high density interconnect technology
US5980983A (en) 1997-04-17 1999-11-09 The President And Fellows Of Harvard University Liquid precursors for formation of metal oxides
US5912797A (en) * 1997-09-24 1999-06-15 Lucent Technologies Inc. Dielectric materials of amorphous compositions and devices employing same

Also Published As

Publication number Publication date
DE60120254T2 (de) 2006-09-21
TW583333B (en) 2004-04-11
JP2001316820A (ja) 2001-11-16
JP3523211B2 (ja) 2004-04-26
KR20010089235A (ko) 2001-09-29
ATE329065T1 (de) 2006-06-15
EP1132494A2 (de) 2001-09-12
KR100398495B1 (ko) 2003-09-19
US6500499B1 (en) 2002-12-31
EP1132494B1 (de) 2006-06-07
EP1132494A3 (de) 2003-11-12

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