DE60122379D1 - Ladungskontroll- und dosimetriesystem sowie verfahren für einen gas-cluster-ionenstrahl - Google Patents

Ladungskontroll- und dosimetriesystem sowie verfahren für einen gas-cluster-ionenstrahl

Info

Publication number
DE60122379D1
DE60122379D1 DE60122379T DE60122379T DE60122379D1 DE 60122379 D1 DE60122379 D1 DE 60122379D1 DE 60122379 T DE60122379 T DE 60122379T DE 60122379 T DE60122379 T DE 60122379T DE 60122379 D1 DE60122379 D1 DE 60122379D1
Authority
DE
Germany
Prior art keywords
gas
ion beam
charge control
metrology system
cluster ion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60122379T
Other languages
English (en)
Other versions
DE60122379T2 (de
Inventor
Michael E Mack
Bruce K Libby
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TEL Epion Inc
Original Assignee
TEL Epion Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TEL Epion Inc filed Critical TEL Epion Inc
Publication of DE60122379D1 publication Critical patent/DE60122379D1/de
Application granted granted Critical
Publication of DE60122379T2 publication Critical patent/DE60122379T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/026—Means for avoiding or neutralising unwanted electrical charges on tube components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/004—Charge control of objects or beams
    • H01J2237/0041—Neutralising arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H01J2237/0812—Ionized cluster beam [ICB] sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
DE60122379T 2000-12-26 2001-12-26 Ladungskontroll- und dosimetriesystem sowie verfahren für einen gas-cluster-ionenstrahl Expired - Lifetime DE60122379T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US25828000P 2000-12-26 2000-12-26
US258280P 2000-12-26
PCT/US2001/050343 WO2002052608A2 (en) 2000-12-26 2001-12-26 Charging control and dosimetry system for gas cluster ion beam

Publications (2)

Publication Number Publication Date
DE60122379D1 true DE60122379D1 (de) 2006-09-28
DE60122379T2 DE60122379T2 (de) 2007-08-09

Family

ID=22979888

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60122379T Expired - Lifetime DE60122379T2 (de) 2000-12-26 2001-12-26 Ladungskontroll- und dosimetriesystem sowie verfahren für einen gas-cluster-ionenstrahl

Country Status (5)

Country Link
US (1) US6646277B2 (de)
EP (1) EP1348227B1 (de)
JP (1) JP4168381B2 (de)
DE (1) DE60122379T2 (de)
WO (1) WO2002052608A2 (de)

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US7799683B2 (en) * 2004-11-08 2010-09-21 Tel Epion, Inc. Copper interconnect wiring and method and apparatus for forming thereof
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US7561983B2 (en) * 2006-09-29 2009-07-14 Varian Semiconductor Equipment Associates, Inc. Technique for improving ion implantation based on ion beam angle-related information
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US7550749B2 (en) * 2007-03-30 2009-06-23 Tel Epion Inc. Methods and processing systems for using a gas cluster ion beam to offset systematic non-uniformities in workpieces processed in a process tool
US7566888B2 (en) * 2007-05-23 2009-07-28 Tel Epion Inc. Method and system for treating an interior surface of a workpiece using a charged particle beam
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US7981483B2 (en) * 2007-09-27 2011-07-19 Tel Epion Inc. Method to improve electrical leakage performance and to minimize electromigration in semiconductor devices
US7754588B2 (en) * 2007-09-28 2010-07-13 Tel Epion Inc. Method to improve a copper/dielectric interface in semiconductor devices
US8372489B2 (en) * 2007-09-28 2013-02-12 Tel Epion Inc. Method for directional deposition using a gas cluster ion beam
US20090084987A1 (en) * 2007-09-28 2009-04-02 Varian Semiconductor Equipment Associates, Inc. Charge neutralization in a plasma processing apparatus
US7794798B2 (en) * 2007-09-29 2010-09-14 Tel Epion Inc. Method for depositing films using gas cluster ion beam processing
US7825389B2 (en) * 2007-12-04 2010-11-02 Tel Epion Inc. Method and apparatus for controlling a gas cluster ion beam formed from a gas mixture
US7883999B2 (en) * 2008-01-25 2011-02-08 Tel Epion Inc. Method for increasing the penetration depth of material infusion in a substrate using a gas cluster ion beam
US20090233004A1 (en) * 2008-03-17 2009-09-17 Tel Epion Inc. Method and system for depositing silicon carbide film using a gas cluster ion beam
US20090314963A1 (en) * 2008-06-24 2009-12-24 Tel Epion Inc. Method for forming trench isolation
US7905199B2 (en) * 2008-06-24 2011-03-15 Tel Epion Inc. Method and system for directional growth using a gas cluster ion beam
US9103031B2 (en) * 2008-06-24 2015-08-11 Tel Epion Inc. Method and system for growing a thin film using a gas cluster ion beam
US7871929B2 (en) * 2008-07-30 2011-01-18 Tel Epion Inc. Method of forming semiconductor devices containing metal cap layers
US7776743B2 (en) * 2008-07-30 2010-08-17 Tel Epion Inc. Method of forming semiconductor devices containing metal cap layers
US8202435B2 (en) * 2008-08-01 2012-06-19 Tel Epion Inc. Method for selectively etching areas of a substrate using a gas cluster ion beam
US8169769B2 (en) * 2008-09-11 2012-05-01 Tel Epion Inc. Electrostatic chuck power supply
US7948734B2 (en) * 2008-09-11 2011-05-24 Tel Epion Inc. Electrostatic chuck power supply
US7834327B2 (en) * 2008-09-23 2010-11-16 Tel Epion Inc. Self-biasing active load circuit and related power supply for use in a charged particle beam processing system
US8313663B2 (en) 2008-09-24 2012-11-20 Tel Epion Inc. Surface profile adjustment using gas cluster ion beam processing
US8981322B2 (en) * 2009-02-04 2015-03-17 Tel Epion Inc. Multiple nozzle gas cluster ion beam system
US8097860B2 (en) * 2009-02-04 2012-01-17 Tel Epion Inc. Multiple nozzle gas cluster ion beam processing system and method of operating
US20100193898A1 (en) * 2009-02-04 2010-08-05 Tel Epion Inc. Method for forming trench isolation using gas cluster ion beam processing
US7968422B2 (en) * 2009-02-09 2011-06-28 Tel Epion Inc. Method for forming trench isolation using a gas cluster ion beam growth process
US20100200774A1 (en) * 2009-02-09 2010-08-12 Tel Epion Inc. Multi-sequence film deposition and growth using gas cluster ion beam processing
US8455060B2 (en) * 2009-02-19 2013-06-04 Tel Epion Inc. Method for depositing hydrogenated diamond-like carbon films using a gas cluster ion beam
US7947582B2 (en) * 2009-02-27 2011-05-24 Tel Epion Inc. Material infusion in a trap layer structure using gas cluster ion beam processing
US8226835B2 (en) * 2009-03-06 2012-07-24 Tel Epion Inc. Ultra-thin film formation using gas cluster ion beam processing
EP2405858A4 (de) * 2009-03-11 2014-04-30 Exogenesis Corp Verfahren zur verbesserung der bioaktiven eigenschaften einer oberfläche und objekte mit derartig verbesserten oberflächen
US20100243913A1 (en) 2009-03-31 2010-09-30 Tel Epion Inc. Pre-aligned nozzle/skimmer
US8877299B2 (en) * 2009-03-31 2014-11-04 Tel Epion Inc. Method for enhancing a substrate using gas cluster ion beam processing
US7982196B2 (en) * 2009-03-31 2011-07-19 Tel Epion Inc. Method for modifying a material layer using gas cluster ion beam processing
US8048788B2 (en) * 2009-10-08 2011-11-01 Tel Epion Inc. Method for treating non-planar structures using gas cluster ion beam processing
US8237136B2 (en) * 2009-10-08 2012-08-07 Tel Epion Inc. Method and system for tilting a substrate during gas cluster ion beam processing
US20110084214A1 (en) * 2009-10-08 2011-04-14 Tel Epion Inc. Gas cluster ion beam processing method for preparing an isolation layer in non-planar gate structures
US8338806B2 (en) 2010-05-05 2012-12-25 Tel Epion Inc. Gas cluster ion beam system with rapid gas switching apparatus
US8173980B2 (en) 2010-05-05 2012-05-08 Tel Epion Inc. Gas cluster ion beam system with cleaning apparatus
US8481340B2 (en) 2010-06-16 2013-07-09 Tel Epion Inc. Method for preparing a light-emitting device using gas cluster ion beam processing
US20120000421A1 (en) * 2010-07-02 2012-01-05 Varian Semicondutor Equipment Associates, Inc. Control apparatus for plasma immersion ion implantation of a dielectric substrate
US8791430B2 (en) 2011-03-04 2014-07-29 Tel Epion Inc. Scanner for GCIB system
US9029808B2 (en) 2011-03-04 2015-05-12 Tel Epion Inc. Low contamination scanner for GCIB system
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US8546209B1 (en) 2012-06-15 2013-10-01 International Business Machines Corporation Replacement metal gate processing with reduced interlevel dielectric layer etch rate
US9111719B1 (en) * 2014-01-30 2015-08-18 Axcelis Technologies, Inc. Method for enhancing beam utilization in a scanned beam ion implanter
US9540725B2 (en) 2014-05-14 2017-01-10 Tel Epion Inc. Method and apparatus for beam deflection in a gas cluster ion beam system
JP6547925B1 (ja) * 2017-09-29 2019-07-24 株式会社村田製作所 圧電基板の製造装置及び圧電基板の製造方法
TW202129682A (zh) * 2019-10-04 2021-08-01 漢辰科技股份有限公司 藉由偏壓電壓來減少顆粒汙染的裝置和方法

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Also Published As

Publication number Publication date
US6646277B2 (en) 2003-11-11
JP4168381B2 (ja) 2008-10-22
EP1348227B1 (de) 2006-08-16
US20020130275A1 (en) 2002-09-19
JP2004527875A (ja) 2004-09-09
WO2002052608A2 (en) 2002-07-04
WO2002052608A3 (en) 2003-01-09
EP1348227A2 (de) 2003-10-01
DE60122379T2 (de) 2007-08-09

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: TEL EPION INC., BILLERICA, MASS., US