DE60125932D1 - Nichtflüchtige Halbleiterspeicher - Google Patents

Nichtflüchtige Halbleiterspeicher

Info

Publication number
DE60125932D1
DE60125932D1 DE60125932T DE60125932T DE60125932D1 DE 60125932 D1 DE60125932 D1 DE 60125932D1 DE 60125932 T DE60125932 T DE 60125932T DE 60125932 T DE60125932 T DE 60125932T DE 60125932 D1 DE60125932 D1 DE 60125932D1
Authority
DE
Germany
Prior art keywords
volatile semiconductor
semiconductor memories
memories
volatile
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60125932T
Other languages
English (en)
Other versions
DE60125932T2 (de
Inventor
Koji Hosono
Hiroshi Nakamura
Ken Takeuchi
Kenichi Imamiya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE60125932D1 publication Critical patent/DE60125932D1/de
Application granted granted Critical
Publication of DE60125932T2 publication Critical patent/DE60125932T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G11C11/5635—Erasing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/24—Bit-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/344—Arrangements for verifying correct erasure or for detecting overerased cells
    • G11C16/3445—Circuits or methods to verify correct erasure of nonvolatile memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/562—Multilevel memory programming aspects
    • G11C2211/5621—Multilevel programming verification
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/564—Miscellaneous aspects
    • G11C2211/5641—Multilevel memory having cells with different number of storage levels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/564—Miscellaneous aspects
    • G11C2211/5642—Multilevel memory with buffers, latches, registers at input or output
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/564—Miscellaneous aspects
    • G11C2211/5643—Multilevel memory comprising cache storage devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1006—Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor
DE60125932T 2000-03-08 2001-03-08 Nichtflüchtige Halbleiterspeicher Expired - Lifetime DE60125932T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2000063798 2000-03-08
JP2000063798 2000-03-08
JP2000323199 2000-10-23
JP2000323199A JP3983969B2 (ja) 2000-03-08 2000-10-23 不揮発性半導体記憶装置

Publications (2)

Publication Number Publication Date
DE60125932D1 true DE60125932D1 (de) 2007-02-22
DE60125932T2 DE60125932T2 (de) 2007-10-18

Family

ID=26587039

Family Applications (2)

Application Number Title Priority Date Filing Date
DE60100716T Expired - Lifetime DE60100716T2 (de) 2000-03-08 2001-03-08 Nichtflüchtige Halbleiterspeicher
DE60125932T Expired - Lifetime DE60125932T2 (de) 2000-03-08 2001-03-08 Nichtflüchtige Halbleiterspeicher

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE60100716T Expired - Lifetime DE60100716T2 (de) 2000-03-08 2001-03-08 Nichtflüchtige Halbleiterspeicher

Country Status (5)

Country Link
US (8) US6937510B2 (de)
EP (2) EP1288964B1 (de)
JP (1) JP3983969B2 (de)
KR (1) KR100458408B1 (de)
DE (2) DE60100716T2 (de)

Families Citing this family (337)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4023953B2 (ja) 1999-06-22 2007-12-19 株式会社ルネサステクノロジ 不揮発性半導体記憶装置
JP4907011B2 (ja) * 2001-04-27 2012-03-28 株式会社半導体エネルギー研究所 不揮発性メモリとその駆動方法、及び半導体装置
US7042770B2 (en) 2001-07-23 2006-05-09 Samsung Electronics Co., Ltd. Memory devices with page buffer having dual registers and method of using the same
JP3851865B2 (ja) 2001-12-19 2006-11-29 株式会社東芝 半導体集積回路
KR100769799B1 (ko) * 2001-12-20 2007-10-23 주식회사 하이닉스반도체 플래쉬 메모리 장치
JP4004811B2 (ja) * 2002-02-06 2007-11-07 株式会社東芝 不揮発性半導体記憶装置
WO2003085677A1 (fr) 2002-04-05 2003-10-16 Renesas Technology Corp. Memoire non volatile
US7051127B2 (en) * 2002-05-10 2006-05-23 Hewlett-Packard Development Company, L.P. Method and apparatus for selectively providing data pre-emphasis based upon data content history
JP4257824B2 (ja) * 2002-07-03 2009-04-22 シャープ株式会社 半導体記憶装置
JP2004086991A (ja) * 2002-08-27 2004-03-18 Renesas Technology Corp 不揮発性記憶装置
US7046568B2 (en) * 2002-09-24 2006-05-16 Sandisk Corporation Memory sensing circuit and method for low voltage operation
US7324393B2 (en) 2002-09-24 2008-01-29 Sandisk Corporation Method for compensated sensing in non-volatile memory
US7443757B2 (en) * 2002-09-24 2008-10-28 Sandisk Corporation Non-volatile memory and method with reduced bit line crosstalk errors
US7196931B2 (en) 2002-09-24 2007-03-27 Sandisk Corporation Non-volatile memory and method with reduced source line bias errors
KR100615975B1 (ko) 2002-09-24 2006-08-28 쌘디스크 코포레이션 비휘발성 메모리 및 그 감지 방법
US6987693B2 (en) * 2002-09-24 2006-01-17 Sandisk Corporation Non-volatile memory and method with reduced neighboring field errors
US7327619B2 (en) 2002-09-24 2008-02-05 Sandisk Corporation Reference sense amplifier for non-volatile memory
JP4270832B2 (ja) * 2002-09-26 2009-06-03 株式会社東芝 不揮発性半導体メモリ
JP3913704B2 (ja) * 2003-04-22 2007-05-09 株式会社東芝 不揮発性半導体記憶装置及びこれを用いた電子装置
JP4563715B2 (ja) * 2003-04-29 2010-10-13 三星電子株式会社 パーシャルコピーバック動作モードを有するフラッシュメモリ装置
FR2856185A1 (fr) * 2003-06-12 2004-12-17 St Microelectronics Sa Memoire flash programmable par mot
KR100512181B1 (ko) * 2003-07-11 2005-09-05 삼성전자주식회사 멀티 레벨 셀을 갖는 플래시 메모리 장치와 그것의 독출방법 및 프로그램 방법
JP2005063548A (ja) * 2003-08-11 2005-03-10 Semiconductor Energy Lab Co Ltd メモリ及びその駆動方法
US6956770B2 (en) 2003-09-17 2005-10-18 Sandisk Corporation Non-volatile memory and method with bit line compensation dependent on neighboring operating modes
US7064980B2 (en) 2003-09-17 2006-06-20 Sandisk Corporation Non-volatile memory and method with bit line coupled compensation
JP4287235B2 (ja) * 2003-10-09 2009-07-01 株式会社東芝 不揮発性半導体記憶装置
KR100543310B1 (ko) * 2003-12-24 2006-01-20 주식회사 하이닉스반도체 플래쉬 메모리 소자
KR100562134B1 (ko) * 2004-01-09 2006-03-21 주식회사 하이닉스반도체 플래시 메모리 소자의 페이지 버퍼
US7490283B2 (en) 2004-05-13 2009-02-10 Sandisk Corporation Pipelined data relocation and improved chip architectures
KR100734261B1 (ko) * 2004-05-21 2007-07-02 삼성전자주식회사 커플링비를 향상시킬 수 있는 비휘발성 반도체 메모리 소자
US7009889B2 (en) * 2004-05-28 2006-03-07 Sandisk Corporation Comprehensive erase verification for non-volatile memory
JP2006031871A (ja) * 2004-07-20 2006-02-02 Toshiba Corp 半導体記憶装置
US7298648B2 (en) * 2004-11-19 2007-11-20 Samsung Electronics Co., Ltd. Page buffer and multi-state nonvolatile memory device including the same
US7420847B2 (en) * 2004-12-14 2008-09-02 Sandisk Corporation Multi-state memory having data recovery after program fail
US7120051B2 (en) * 2004-12-14 2006-10-10 Sandisk Corporation Pipelined programming of non-volatile memories using early data
US7158421B2 (en) 2005-04-01 2007-01-02 Sandisk Corporation Use of data latches in multi-phase programming of non-volatile memories
US7849381B2 (en) * 2004-12-21 2010-12-07 Sandisk Corporation Method for copying data in reprogrammable non-volatile memory
KR100672122B1 (ko) 2005-03-10 2007-01-19 주식회사 하이닉스반도체 소비 전력이 감소된 플래시 메모리 장치의 페이지 버퍼 회로
KR100685532B1 (ko) * 2005-03-15 2007-02-22 주식회사 하이닉스반도체 독출속도를 향상시키기 위한 버퍼 메모리를 갖는 불휘발성메모리 장치
KR100723772B1 (ko) 2005-03-28 2007-05-30 주식회사 하이닉스반도체 개선된 프로그램 동작 성능을 가지는 플래쉬 메모리 소자의페이지 버퍼 및 그것의 프로그램 동작 제어 방법
US7206230B2 (en) 2005-04-01 2007-04-17 Sandisk Corporation Use of data latches in cache operations of non-volatile memories
US7463521B2 (en) * 2005-04-01 2008-12-09 Sandisk Corporation Method for non-volatile memory with managed execution of cached data
US7447078B2 (en) * 2005-04-01 2008-11-04 Sandisk Corporation Method for non-volatile memory with background data latch caching during read operations
KR100600301B1 (ko) * 2005-05-25 2006-07-13 주식회사 하이닉스반도체 면적이 감소된 페이지 버퍼 회로와, 이를 포함하는 플래시메모리 장치 및 그 프로그램 동작 방법
WO2006129780A1 (ja) * 2005-05-30 2006-12-07 Seiko Epson Corporation シーケンシャル書込においてべリファイ処理を行う不揮発性メモリ
US20060294313A1 (en) * 2005-06-23 2006-12-28 International Business Machines Corporation System and method of remote media cache optimization for use with multiple processing units
KR100624300B1 (ko) * 2005-06-29 2006-09-19 주식회사 하이닉스반도체 프로그램 시간을 감소시키는 플래시 메모리 장치의프로그램 동작 제어 방법
KR100634457B1 (ko) 2005-07-04 2006-10-16 삼성전자주식회사 단일의 페이지 버퍼 구조로 멀티-비트 및 단일-비트프로그램 동작을 수행하는 플래시 메모리 장치
KR100648286B1 (ko) 2005-07-04 2006-11-23 삼성전자주식회사 단일의 페이지 버퍼 구조로 멀티-비트 및 단일-비트프로그램 동작을 수행하는 플래시 메모리 장치
KR100634458B1 (ko) * 2005-07-04 2006-10-16 삼성전자주식회사 단일의 페이지 버퍼 구조로 멀티-비트 및 단일-비트프로그램 동작을 수행하는 플래시 메모리 장치
JP5165215B2 (ja) * 2005-07-04 2013-03-21 三星電子株式会社 ページバッファとそれを含む不揮発性メモリ装置
KR100721012B1 (ko) 2005-07-12 2007-05-22 삼성전자주식회사 낸드 플래시 메모리 장치 및 그것의 프로그램 방법
US7336538B2 (en) 2005-07-28 2008-02-26 Stmicroelectronics S.R.L. Page buffer circuit and method for multi-level NAND programmable memories
EP1750278B1 (de) * 2005-07-28 2009-11-11 STMicroelectronics S.r.l. Verfahren zur Programmierung einer Flash-Speichervorrichtung mit vier Zuständen und entsprechender Seitenspeicher
EP1748446A1 (de) 2005-07-28 2007-01-31 STMicroelectronics S.r.l. Zweiseitenprogrammierung
EP1748445B1 (de) 2005-07-28 2008-12-10 STMicroelectronics S.r.l. Seitenspeicher für programmierbare Multipegel-NAND-Speicher
KR100630537B1 (ko) * 2005-08-09 2006-10-02 주식회사 하이닉스반도체 듀얼 페이지 프로그램 기능을 가지는 플래시 메모리 장치의페이지 버퍼 회로 및 그 프로그램 동작 방법
US7752382B2 (en) * 2005-09-09 2010-07-06 Sandisk Il Ltd Flash memory storage system and method
KR100745600B1 (ko) * 2005-11-07 2007-08-02 삼성전자주식회사 상 변화 메모리 장치 및 그것의 읽기 방법
KR101357076B1 (ko) * 2005-12-28 2014-02-11 샌디스크 테크놀로지스, 인코포레이티드 비휘발성 메모리에서 보상된 감지를 위한 기준 감지 증폭기및 방법
EP1979912B1 (de) * 2006-01-27 2012-11-21 Kilopass Technology, Inc. Elektrisch programmierbares schmelzverbindungsbit
KR100666183B1 (ko) * 2006-02-01 2007-01-09 삼성전자주식회사 3-레벨 불휘발성 반도체 메모리 장치 및 이에 대한구동방법
JP4805696B2 (ja) * 2006-03-09 2011-11-02 株式会社東芝 半導体集積回路装置およびそのデータ記録方式
KR100784108B1 (ko) * 2006-03-27 2007-12-10 주식회사 하이닉스반도체 데이터 입력 에러를 감소시키는 기능을 가지는 플래시메모리 소자 및 그 데이터 입력 동작 방법
JP4693675B2 (ja) 2006-03-27 2011-06-01 株式会社東芝 半導体記憶装置の制御方法
US7917685B2 (en) * 2006-05-04 2011-03-29 Micron Technology, Inc. Method for reading a multilevel cell in a non-volatile memory device
TWI427637B (zh) * 2006-05-05 2014-02-21 Sandisk Technologies Inc 在程式執行期間具有背景資料鎖存快取的非揮發性記憶體及方法
KR100694978B1 (ko) * 2006-05-12 2007-03-14 주식회사 하이닉스반도체 데이터 입출력 속도를 증가시키는 구조를 가지는 플래시메모리 장치 및 그 데이터 입출력 동작 방법
EP1865513A1 (de) * 2006-06-07 2007-12-12 STMicroelectronics S.r.l. Nichtflüchtige Speichervorrichtung
EP1870901A1 (de) 2006-06-21 2007-12-26 STMicroelectronics S.r.l. Seitenpuffer für Mehrstuffigen NAND-Flash-Speichern
US7359248B2 (en) * 2006-07-06 2008-04-15 Elite Semiconductor Memory Technology Inc Methods for programming and reading NAND flash memory device and page buffer performing the same
KR100754226B1 (ko) * 2006-08-22 2007-09-03 삼성전자주식회사 비휘발성 데이터 저장장치의 프로그래밍 방법 및 그 장치
KR100805840B1 (ko) 2006-09-01 2008-02-21 삼성전자주식회사 캐시를 이용한 플래시 메모리 장치 및 그것의 프로그램방법
KR100822560B1 (ko) * 2006-09-04 2008-04-16 주식회사 하이닉스반도체 낸드 플래시 메모리의 전류 측정 회로
KR100894809B1 (ko) * 2006-09-22 2009-04-24 삼성전자주식회사 메모리 시스템 및 그것의 프로그램 방법
US7701770B2 (en) * 2006-09-29 2010-04-20 Hynix Semiconductor Inc. Flash memory device and program method thereof
KR100866954B1 (ko) 2006-09-29 2008-11-05 삼성전자주식회사 멀티 레벨 셀의 프로그래밍 시간을 줄일 수 있는 플래쉬메모리 장치 및 그 프로그래밍 방법
KR100816148B1 (ko) * 2006-09-29 2008-03-21 주식회사 하이닉스반도체 플래시 메모리 소자 및 이의 독출 방법
JP4212622B2 (ja) * 2006-11-30 2009-01-21 株式会社東芝 時限スイッチ付き情報担体及び半導体集積回路
KR100816121B1 (ko) 2006-12-28 2008-03-21 주식회사 하이닉스반도체 불휘발성 메모리장치의 멀티비트 프로그램 방법
US8391061B2 (en) 2006-12-29 2013-03-05 Intel Corporation Flash memory and associated methods
US20080158986A1 (en) * 2006-12-29 2008-07-03 Daniel Elmhurst Flash memory and associated methods
KR100799688B1 (ko) * 2007-01-03 2008-02-01 삼성전자주식회사 백업 회로를 갖는 메모리 시스템 및 그것의 프로그램 방법
KR100877610B1 (ko) * 2007-01-23 2009-01-09 삼성전자주식회사 페이지 데이터 저장 방법과 저장 장치
KR100819102B1 (ko) * 2007-02-06 2008-04-03 삼성전자주식회사 개선된 멀티 페이지 프로그램 동작을 갖는 불휘발성 반도체메모리 장치
US7719899B2 (en) * 2007-02-13 2010-05-18 Micron Technology, Inc. Circuits, systems and methods for driving high and low voltages on bit lines in non-volatile memory
US7646645B2 (en) * 2007-04-13 2010-01-12 Atmel Corporation Method and apparatus for testing the functionality of a page decoder
KR100889781B1 (ko) * 2007-04-30 2009-03-20 삼성전자주식회사 멀티-비트 데이터를 저장하는 메모리 시스템, 그것의프로그램 방법, 그것을 포함한 컴퓨팅 시스템
US7656709B2 (en) * 2007-05-03 2010-02-02 Micron Technology, Inc. NAND step up voltage switching method
US7577029B2 (en) * 2007-05-04 2009-08-18 Mosaid Technologies Incorporated Multi-level cell access buffer with dual function
KR100888482B1 (ko) * 2007-05-11 2009-03-12 삼성전자주식회사 비휘발성 반도체 메모리 장치 및 상기 비휘발성 반도체메모리 장치의 쓰기 방법
KR101468026B1 (ko) * 2007-05-14 2014-12-02 삼성전자주식회사 메모리 셀 프로그래밍 방법 및 반도체 장치
JP4455612B2 (ja) 2007-05-21 2010-04-21 株式会社東芝 半導体記憶装置
JP4504397B2 (ja) * 2007-05-29 2010-07-14 株式会社東芝 半導体記憶装置
US7630246B2 (en) * 2007-06-18 2009-12-08 Micron Technology, Inc. Programming rate identification and control in a solid state memory
WO2009013879A1 (ja) * 2007-07-20 2009-01-29 Panasonic Corporation メモリーコントローラ、及びこれを用いた不揮発性記憶装置
US8259497B2 (en) 2007-08-06 2012-09-04 Apple Inc. Programming schemes for multi-level analog memory cells
KR101343597B1 (ko) * 2007-08-09 2013-12-20 삼성전자주식회사 낸드 플래시 메모리 장치 및 그것의 프로그램 방법
US7869276B2 (en) * 2007-11-29 2011-01-11 Macronix International Co., Ltd. Nand type memory and programming method thereof
JP4510072B2 (ja) 2007-12-20 2010-07-21 力晶半導体股▲ふん▼有限公司 不揮発性半導体記憶装置とその書き込み方法
US7660177B2 (en) * 2007-12-21 2010-02-09 Silicon Storage Technology, Inc. Non-volatile memory device having high speed serial interface
US7593265B2 (en) * 2007-12-28 2009-09-22 Sandisk Corporation Low noise sense amplifier array and method for nonvolatile memory
US20090187701A1 (en) * 2008-01-22 2009-07-23 Jin-Ki Kim Nand flash memory access with relaxed timing constraints
US7961512B2 (en) * 2008-03-19 2011-06-14 Sandisk Corporation Adaptive algorithm in cache operation with dynamic data latch requirements
KR100991911B1 (ko) * 2008-04-16 2010-11-04 매그나칩 반도체 유한회사 비휘발성 메모리 장치
US7957197B2 (en) * 2008-05-28 2011-06-07 Sandisk Corporation Nonvolatile memory with a current sense amplifier having a precharge circuit and a transfer gate coupled to a sense node
US7729166B2 (en) 2008-07-02 2010-06-01 Mosaid Technologies Incorporated Multiple-bit per cell (MBC) non-volatile memory apparatus and system having polarity control and method of programming same
US8130528B2 (en) 2008-08-25 2012-03-06 Sandisk 3D Llc Memory system with sectional data lines
US7889572B2 (en) * 2008-09-04 2011-02-15 Macronix International Co., Ltd. Memory with high reading performance and reading method thereof
US7796431B2 (en) * 2008-10-01 2010-09-14 Elite Semiconductor Memory Technology Inc. Page buffer used in a NAND flash memory and programming method thereof
US8027209B2 (en) * 2008-10-06 2011-09-27 Sandisk 3D, Llc Continuous programming of non-volatile memory
US8832353B2 (en) * 2009-04-07 2014-09-09 Sandisk Technologies Inc. Host stop-transmission handling
US8279650B2 (en) 2009-04-20 2012-10-02 Sandisk 3D Llc Memory system with data line switching scheme
JP5480714B2 (ja) * 2009-05-15 2014-04-23 パナソニック株式会社 半導体記録装置
JP2010282697A (ja) * 2009-06-05 2010-12-16 Toshiba Corp 不揮発性半導体記憶装置
KR101049663B1 (ko) * 2009-06-08 2011-07-14 주식회사 하이닉스반도체 페이지 버퍼 회로와 이를 구비한 불휘발성 메모리 소자 및 그 동작 방법
US8307241B2 (en) * 2009-06-16 2012-11-06 Sandisk Technologies Inc. Data recovery in multi-level cell nonvolatile memory
KR101069114B1 (ko) * 2009-06-29 2011-09-30 주식회사 하이닉스반도체 불휘발성 메모리 소자
JP2011040124A (ja) * 2009-08-07 2011-02-24 Toshiba Corp 半導体記憶装置のデータ読み出し方法
DE102009041935B3 (de) * 2009-09-17 2011-04-14 Austriamicrosystems Ag Schaltungsanordnung mit einem Zustandsspeicherelement und Verfahren zum Betreiben eines Zustandsspeicherelements
JP5204069B2 (ja) * 2009-09-18 2013-06-05 株式会社東芝 不揮発性半導体記憶装置
JP2011129176A (ja) * 2009-12-15 2011-06-30 Toshiba Corp 不揮発性半導体記憶装置
KR101829208B1 (ko) * 2009-12-31 2018-02-20 에스케이하이닉스 주식회사 반도체 메모리 장치의 동작 방법
JP2011146100A (ja) 2010-01-15 2011-07-28 Toshiba Corp 半導体記憶装置及びその読出し方法
US8885407B1 (en) * 2010-01-19 2014-11-11 Perumal Ratnam Vertical memory cells and methods, architectures and devices for the same
US8107298B2 (en) * 2010-01-29 2012-01-31 Sandisk Technologies Inc. Non-volatile memory with fast binary programming and reduced power consumption
JP2011187141A (ja) * 2010-03-10 2011-09-22 Toshiba Corp 転送回路及びそれを用いた不揮発性半導体記憶装置
WO2011125455A1 (en) * 2010-04-09 2011-10-13 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor memory device
JP2011227976A (ja) * 2010-04-22 2011-11-10 Elpida Memory Inc 不揮発性半導体メモリ装置、及びそのメモリ装置を有するメモリシステム
KR101069013B1 (ko) * 2010-07-09 2011-09-29 주식회사 하이닉스반도체 반도체 메모리 장치 및 그의 동작 방법
KR101735586B1 (ko) * 2010-07-29 2017-05-15 삼성전자 주식회사 불휘발성 메모리 장치, 그것의 프로그램 방법, 그리고 그것을 포함하는 메모리 시스템
KR101666406B1 (ko) 2010-08-16 2016-10-17 삼성전자 주식회사 비휘발성 메모리 장치 및 그 프로그램 방법, 메모리 시스템
JP2012169002A (ja) * 2011-02-14 2012-09-06 Toshiba Corp 半導体記憶装置
JP2012069180A (ja) * 2010-09-21 2012-04-05 Toshiba Corp 半導体記憶装置
JP5259666B2 (ja) * 2010-09-22 2013-08-07 株式会社東芝 不揮発性半導体記憶装置
CN103119656A (zh) * 2010-09-24 2013-05-22 株式会社东芝 非易失性半导体存储器件
US8526238B2 (en) * 2010-10-01 2013-09-03 Micron Technology, Inc. Memory arrays and methods of operating memory
KR20120045202A (ko) * 2010-10-29 2012-05-09 에스케이하이닉스 주식회사 비휘발성 메모리 장치 및 프로그램 방법
US8472280B2 (en) 2010-12-21 2013-06-25 Sandisk Technologies Inc. Alternate page by page programming scheme
JP6097222B2 (ja) * 2010-12-24 2017-03-15 マイクロン テクノロジー， インク． メモリ用連続的ページ読み出し
FR2970592B1 (fr) 2011-01-19 2013-02-15 Centre Nat Rech Scient Cellule mémoire volatile/non volatile programmable
FR2970589B1 (fr) 2011-01-19 2013-02-15 Centre Nat Rech Scient Cellule mémoire volatile/non volatile
FR2970593B1 (fr) 2011-01-19 2013-08-02 Centre Nat Rech Scient Cellule mémoire volatile/non volatile compacte
JP5798933B2 (ja) * 2011-01-26 2015-10-21 株式会社半導体エネルギー研究所 信号処理回路
JP5426600B2 (ja) * 2011-03-30 2014-02-26 株式会社東芝 半導体メモリ
FR2976712B1 (fr) 2011-06-15 2014-01-31 Centre Nat Rech Scient Element de memoire non-volatile
FR2976711B1 (fr) 2011-06-15 2014-01-31 Centre Nat Rech Scient Cellule memoire avec memorisation volatile et non volatile
KR101775660B1 (ko) * 2011-09-29 2017-09-07 삼성전자주식회사 워드 라인 전압의 변화없이 상이한 문턱 전압들을 갖는 메모리 셀들을 읽는 방법 및 그것을 이용한 불 휘발성 메모리 장치
US8630120B2 (en) 2011-10-20 2014-01-14 Sandisk Technologies Inc. Compact sense amplifier for non-volatile memory
US8705293B2 (en) 2011-10-20 2014-04-22 Sandisk Technologies Inc. Compact sense amplifier for non-volatile memory suitable for quick pass write
US8456917B1 (en) * 2011-11-29 2013-06-04 Elpida Memory, Inc. Logic circuit for a semiconductor memory device, and method of managing an operation in the semiconductor memory device
TWI490879B (zh) * 2011-12-14 2015-07-01 Macronix Int Co Ltd 電流感測型感測放大器及其方法
US9147480B2 (en) * 2011-12-16 2015-09-29 Macronix International Co., Ltd. Current sensing type sense amplifier and method thereof
JP2013143155A (ja) 2012-01-06 2013-07-22 Powerchip Technology Corp 不揮発性半導体記憶装置とその書き込み方法
JP5950091B2 (ja) * 2012-04-10 2016-07-13 セイコーエプソン株式会社 不揮発性記憶装置、集積回路装置および電子機器
US8937837B2 (en) * 2012-05-08 2015-01-20 Sandisk Technologies Inc. Bit line BL isolation scheme during erase operation for non-volatile storage
KR20130129700A (ko) * 2012-05-21 2013-11-29 에스케이하이닉스 주식회사 비휘발성 메모리 장치 및 그의 구동방법
TWI570734B (zh) * 2012-06-07 2017-02-11 美光科技公司 記憶體連續頁面讀取
TWI506630B (zh) * 2012-06-11 2015-11-01 Macronix Int Co Ltd 具有變動壓降的位元線偏壓電路
US20140003176A1 (en) 2012-06-28 2014-01-02 Man Lung Mui Compact High Speed Sense Amplifier for Non-Volatile Memory with Reduced layout Area and Power Consumption
US8971141B2 (en) 2012-06-28 2015-03-03 Sandisk Technologies Inc. Compact high speed sense amplifier for non-volatile memory and hybrid lockout
US9293195B2 (en) 2012-06-28 2016-03-22 Sandisk Technologies Inc. Compact high speed sense amplifier for non-volatile memory
TWI497495B (zh) * 2012-07-02 2015-08-21 Winbond Electronics Corp 用於讀取ｎａｎｄ快閃記憶體的方法和設備
JP2014063555A (ja) 2012-09-24 2014-04-10 Toshiba Corp 不揮発性半導体記憶装置、及びその制御方法
US9158667B2 (en) 2013-03-04 2015-10-13 Micron Technology, Inc. Apparatuses and methods for performing logical operations using sensing circuitry
US9037902B2 (en) 2013-03-15 2015-05-19 Sandisk Technologies Inc. Flash memory techniques for recovering from write interrupt resulting from voltage fault
FR3004576B1 (fr) 2013-04-15 2019-11-29 Commissariat A L'energie Atomique Et Aux Energies Alternatives Cellule memoire avec memorisation de donnees non volatile
FR3004577A1 (de) 2013-04-15 2014-10-17 Commissariat Energie Atomique
ITMI20131060A1 (it) * 2013-06-26 2014-12-27 St Microelectronics Srl Dispositivo di memoria non-volatile con circuito di lettura migliorato
FR3008219B1 (fr) 2013-07-05 2016-12-09 Commissariat Energie Atomique Dispositif a memoire non volatile
WO2015004715A1 (ja) * 2013-07-08 2015-01-15 株式会社 東芝 半導体記憶装置およびその制御方法
US8964496B2 (en) 2013-07-26 2015-02-24 Micron Technology, Inc. Apparatuses and methods for performing compare operations using sensing circuitry
US8971124B1 (en) 2013-08-08 2015-03-03 Micron Technology, Inc. Apparatuses and methods for performing logical operations using sensing circuitry
US9153305B2 (en) 2013-08-30 2015-10-06 Micron Technology, Inc. Independently addressable memory array address spaces
US9019785B2 (en) 2013-09-19 2015-04-28 Micron Technology, Inc. Data shifting via a number of isolation devices
CN104575607B (zh) * 2013-10-14 2018-05-01 旺宏电子股份有限公司 感测放大器及其感测方法
US9449675B2 (en) 2013-10-31 2016-09-20 Micron Technology, Inc. Apparatuses and methods for identifying an extremum value stored in an array of memory cells
KR20150051057A (ko) 2013-11-01 2015-05-11 에스케이하이닉스 주식회사 반도체 장치, 그 동작 방법 및 이를 포함하는 반도체 시스템
US9430191B2 (en) 2013-11-08 2016-08-30 Micron Technology, Inc. Division operations for memory
KR102187521B1 (ko) * 2014-01-28 2020-12-08 삼성전자주식회사 불휘발성 메모리 및 메모리 컨트롤러를 포함하는 메모리 시스템 및 불휘발성 메모리에 데이터를 프로그램하는 프로그램 방법
US9934856B2 (en) 2014-03-31 2018-04-03 Micron Technology, Inc. Apparatuses and methods for comparing data patterns in memory
JP5745136B1 (ja) 2014-05-09 2015-07-08 力晶科技股▲ふん▼有限公司 不揮発性半導体記憶装置とその書き込み方法
US9711206B2 (en) 2014-06-05 2017-07-18 Micron Technology, Inc. Performing logical operations using sensing circuitry
US9496023B2 (en) 2014-06-05 2016-11-15 Micron Technology, Inc. Comparison operations on logical representations of values in memory
US9786335B2 (en) * 2014-06-05 2017-10-10 Micron Technology, Inc. Apparatuses and methods for performing logical operations using sensing circuitry
US9830999B2 (en) 2014-06-05 2017-11-28 Micron Technology, Inc. Comparison operations in memory
US9455020B2 (en) 2014-06-05 2016-09-27 Micron Technology, Inc. Apparatuses and methods for performing an exclusive or operation using sensing circuitry
US9779019B2 (en) 2014-06-05 2017-10-03 Micron Technology, Inc. Data storage layout
US9704540B2 (en) 2014-06-05 2017-07-11 Micron Technology, Inc. Apparatuses and methods for parity determination using sensing circuitry
US10074407B2 (en) 2014-06-05 2018-09-11 Micron Technology, Inc. Apparatuses and methods for performing invert operations using sensing circuitry
US9449674B2 (en) * 2014-06-05 2016-09-20 Micron Technology, Inc. Performing logical operations using sensing circuitry
US9711207B2 (en) 2014-06-05 2017-07-18 Micron Technology, Inc. Performing logical operations using sensing circuitry
US9910787B2 (en) 2014-06-05 2018-03-06 Micron Technology, Inc. Virtual address table
US9343141B2 (en) 2014-07-15 2016-05-17 Sandisk Technologies Inc. Reprogramming memory with single program pulse per data state
US9324419B2 (en) 2014-07-15 2016-04-26 Sandisk Technologies Inc. Multiple pass programming for memory with different program pulse widths
US9208895B1 (en) 2014-08-14 2015-12-08 Sandisk Technologies Inc. Cell current control through power supply
US9349468B2 (en) 2014-08-25 2016-05-24 SanDisk Technologies, Inc. Operational amplifier methods for charging of sense amplifier internal nodes
US9847110B2 (en) 2014-09-03 2017-12-19 Micron Technology, Inc. Apparatuses and methods for storing a data value in multiple columns of an array corresponding to digits of a vector
US10068652B2 (en) 2014-09-03 2018-09-04 Micron Technology, Inc. Apparatuses and methods for determining population count
US9898252B2 (en) 2014-09-03 2018-02-20 Micron Technology, Inc. Multiplication operations in memory
US9740607B2 (en) 2014-09-03 2017-08-22 Micron Technology, Inc. Swap operations in memory
US9904515B2 (en) 2014-09-03 2018-02-27 Micron Technology, Inc. Multiplication operations in memory
US9747961B2 (en) 2014-09-03 2017-08-29 Micron Technology, Inc. Division operations in memory
US9589602B2 (en) 2014-09-03 2017-03-07 Micron Technology, Inc. Comparison operations in memory
SG11201701901UA (en) * 2014-09-12 2017-04-27 Toshiba Kk Non-volatile semiconductor storage device
US9312018B1 (en) * 2014-09-24 2016-04-12 Intel Corporation Sensing with boost
KR102248835B1 (ko) * 2014-09-29 2021-05-10 삼성전자주식회사 불 휘발성 메모리 장치 및 그것의 동작 방법
US9940026B2 (en) 2014-10-03 2018-04-10 Micron Technology, Inc. Multidimensional contiguous memory allocation
US9836218B2 (en) 2014-10-03 2017-12-05 Micron Technology, Inc. Computing reduction and prefix sum operations in memory
US10163467B2 (en) 2014-10-16 2018-12-25 Micron Technology, Inc. Multiple endianness compatibility
US10147480B2 (en) 2014-10-24 2018-12-04 Micron Technology, Inc. Sort operation in memory
US9779784B2 (en) 2014-10-29 2017-10-03 Micron Technology, Inc. Apparatuses and methods for performing logical operations using sensing circuitry
US9747960B2 (en) 2014-12-01 2017-08-29 Micron Technology, Inc. Apparatuses and methods for converting a mask to an index
US10073635B2 (en) 2014-12-01 2018-09-11 Micron Technology, Inc. Multiple endianness compatibility
US10061590B2 (en) 2015-01-07 2018-08-28 Micron Technology, Inc. Generating and executing a control flow
US10032493B2 (en) 2015-01-07 2018-07-24 Micron Technology, Inc. Longest element length determination in memory
US9583163B2 (en) 2015-02-03 2017-02-28 Micron Technology, Inc. Loop structure for operations in memory
CN107408404B (zh) 2015-02-06 2021-02-12 美光科技公司 用于存储器装置的设备及方法以作为程序指令的存储
EP3254286B1 (de) 2015-02-06 2019-09-11 Micron Technology, INC. Vorrichtungen und verfahren zum parallelen schreiben an mehrere speichervorrichtungsstandorte
WO2016126472A1 (en) 2015-02-06 2016-08-11 Micron Technology, Inc. Apparatuses and methods for scatter and gather
WO2016144724A1 (en) 2015-03-10 2016-09-15 Micron Technology, Inc. Apparatuses and methods for shift decisions
US9741399B2 (en) 2015-03-11 2017-08-22 Micron Technology, Inc. Data shift by elements of a vector in memory
US9898253B2 (en) 2015-03-11 2018-02-20 Micron Technology, Inc. Division operations on variable length elements in memory
CN107430874B (zh) 2015-03-12 2021-02-02 美光科技公司 用于数据移动的设备及方法
US10146537B2 (en) 2015-03-13 2018-12-04 Micron Technology, Inc. Vector population count determination in memory
US10049054B2 (en) 2015-04-01 2018-08-14 Micron Technology, Inc. Virtual register file
US10140104B2 (en) 2015-04-14 2018-11-27 Micron Technology, Inc. Target architecture determination
US9959923B2 (en) 2015-04-16 2018-05-01 Micron Technology, Inc. Apparatuses and methods to reverse data stored in memory
US10073786B2 (en) 2015-05-28 2018-09-11 Micron Technology, Inc. Apparatuses and methods for compute enabled cache
US9704541B2 (en) 2015-06-12 2017-07-11 Micron Technology, Inc. Simulating access lines
US9921777B2 (en) 2015-06-22 2018-03-20 Micron Technology, Inc. Apparatuses and methods for data transfer from sensing circuitry to a controller
KR20170015795A (ko) * 2015-07-31 2017-02-09 에스케이하이닉스 주식회사 반도체 메모리 장치 및 테스트 방법
US9996479B2 (en) 2015-08-17 2018-06-12 Micron Technology, Inc. Encryption of executables in computational memory
JP2017111847A (ja) * 2015-12-17 2017-06-22 株式会社東芝 半導体記憶装置
US9905276B2 (en) 2015-12-21 2018-02-27 Micron Technology, Inc. Control of sensing components in association with performing operations
US9952925B2 (en) 2016-01-06 2018-04-24 Micron Technology, Inc. Error code calculation on sensing circuitry
US10048888B2 (en) 2016-02-10 2018-08-14 Micron Technology, Inc. Apparatuses and methods for partitioned parallel data movement
US9892767B2 (en) 2016-02-12 2018-02-13 Micron Technology, Inc. Data gathering in memory
US9971541B2 (en) 2016-02-17 2018-05-15 Micron Technology, Inc. Apparatuses and methods for data movement
US9653148B1 (en) * 2016-02-18 2017-05-16 Piecemakers Technology, Inc. Multi-bank memory device and system
US10956439B2 (en) 2016-02-19 2021-03-23 Micron Technology, Inc. Data transfer with a bit vector operation device
US9899070B2 (en) 2016-02-19 2018-02-20 Micron Technology, Inc. Modified decode for corner turn
US9697876B1 (en) 2016-03-01 2017-07-04 Micron Technology, Inc. Vertical bit vector shift in memory
US10262721B2 (en) 2016-03-10 2019-04-16 Micron Technology, Inc. Apparatuses and methods for cache invalidate
US9997232B2 (en) 2016-03-10 2018-06-12 Micron Technology, Inc. Processing in memory (PIM) capable memory device having sensing circuitry performing logic operations
JP2017168164A (ja) * 2016-03-15 2017-09-21 東芝メモリ株式会社 メモリデバイス
US10379772B2 (en) 2016-03-16 2019-08-13 Micron Technology, Inc. Apparatuses and methods for operations using compressed and decompressed data
US9910637B2 (en) 2016-03-17 2018-03-06 Micron Technology, Inc. Signed division in memory
US11074988B2 (en) 2016-03-22 2021-07-27 Micron Technology, Inc. Apparatus and methods for debugging on a host and memory device
US10388393B2 (en) 2016-03-22 2019-08-20 Micron Technology, Inc. Apparatus and methods for debugging on a host and memory device
US10120740B2 (en) 2016-03-22 2018-11-06 Micron Technology, Inc. Apparatus and methods for debugging on a memory device
US10977033B2 (en) 2016-03-25 2021-04-13 Micron Technology, Inc. Mask patterns generated in memory from seed vectors
US10474581B2 (en) 2016-03-25 2019-11-12 Micron Technology, Inc. Apparatuses and methods for cache operations
US10430244B2 (en) 2016-03-28 2019-10-01 Micron Technology, Inc. Apparatuses and methods to determine timing of operations
US10074416B2 (en) 2016-03-28 2018-09-11 Micron Technology, Inc. Apparatuses and methods for data movement
US10453502B2 (en) 2016-04-04 2019-10-22 Micron Technology, Inc. Memory bank power coordination including concurrently performing a memory operation in a selected number of memory regions
US10607665B2 (en) 2016-04-07 2020-03-31 Micron Technology, Inc. Span mask generation
US9818459B2 (en) 2016-04-19 2017-11-14 Micron Technology, Inc. Invert operations using sensing circuitry
US10153008B2 (en) 2016-04-20 2018-12-11 Micron Technology, Inc. Apparatuses and methods for performing corner turn operations using sensing circuitry
US9659605B1 (en) 2016-04-20 2017-05-23 Micron Technology, Inc. Apparatuses and methods for performing corner turn operations using sensing circuitry
CN106021127B (zh) * 2016-05-09 2020-01-14 Tcl移动通信科技（宁波）有限公司 一种基于移动终端的缓存共享方法及系统
US10042608B2 (en) 2016-05-11 2018-08-07 Micron Technology, Inc. Signed division in memory
US9659610B1 (en) 2016-05-18 2017-05-23 Micron Technology, Inc. Apparatuses and methods for shifting data
US10049707B2 (en) 2016-06-03 2018-08-14 Micron Technology, Inc. Shifting data
US10387046B2 (en) 2016-06-22 2019-08-20 Micron Technology, Inc. Bank to bank data transfer
US10037785B2 (en) 2016-07-08 2018-07-31 Micron Technology, Inc. Scan chain operation in sensing circuitry
US10388360B2 (en) 2016-07-19 2019-08-20 Micron Technology, Inc. Utilization of data stored in an edge section of an array
US10733089B2 (en) 2016-07-20 2020-08-04 Micron Technology, Inc. Apparatuses and methods for write address tracking
US10387299B2 (en) 2016-07-20 2019-08-20 Micron Technology, Inc. Apparatuses and methods for transferring data
US9972367B2 (en) 2016-07-21 2018-05-15 Micron Technology, Inc. Shifting data in sensing circuitry
US9767864B1 (en) 2016-07-21 2017-09-19 Micron Technology, Inc. Apparatuses and methods for storing a data value in a sensing circuitry element
US10303632B2 (en) 2016-07-26 2019-05-28 Micron Technology, Inc. Accessing status information
US10468087B2 (en) 2016-07-28 2019-11-05 Micron Technology, Inc. Apparatuses and methods for operations in a self-refresh state
US9990181B2 (en) 2016-08-03 2018-06-05 Micron Technology, Inc. Apparatuses and methods for random number generation
US11029951B2 (en) 2016-08-15 2021-06-08 Micron Technology, Inc. Smallest or largest value element determination
US10606587B2 (en) 2016-08-24 2020-03-31 Micron Technology, Inc. Apparatus and methods related to microcode instructions indicating instruction types
US10466928B2 (en) 2016-09-15 2019-11-05 Micron Technology, Inc. Updating a register in memory
US10387058B2 (en) 2016-09-29 2019-08-20 Micron Technology, Inc. Apparatuses and methods to change data category values
US10014034B2 (en) 2016-10-06 2018-07-03 Micron Technology, Inc. Shifting data in sensing circuitry
US10529409B2 (en) 2016-10-13 2020-01-07 Micron Technology, Inc. Apparatuses and methods to perform logical operations using sensing circuitry
US9805772B1 (en) 2016-10-20 2017-10-31 Micron Technology, Inc. Apparatuses and methods to selectively perform logical operations
US10373666B2 (en) 2016-11-08 2019-08-06 Micron Technology, Inc. Apparatuses and methods for compute components formed over an array of memory cells
US10423353B2 (en) 2016-11-11 2019-09-24 Micron Technology, Inc. Apparatuses and methods for memory alignment
US9761300B1 (en) 2016-11-22 2017-09-12 Micron Technology, Inc. Data shift apparatuses and methods
US10402340B2 (en) 2017-02-21 2019-09-03 Micron Technology, Inc. Memory array page table walk
US10403352B2 (en) 2017-02-22 2019-09-03 Micron Technology, Inc. Apparatuses and methods for compute in data path
US10268389B2 (en) 2017-02-22 2019-04-23 Micron Technology, Inc. Apparatuses and methods for in-memory operations
US10838899B2 (en) 2017-03-21 2020-11-17 Micron Technology, Inc. Apparatuses and methods for in-memory data switching networks
US10185674B2 (en) 2017-03-22 2019-01-22 Micron Technology, Inc. Apparatus and methods for in data path compute operations
US11222260B2 (en) 2017-03-22 2022-01-11 Micron Technology, Inc. Apparatuses and methods for operating neural networks
US10049721B1 (en) 2017-03-27 2018-08-14 Micron Technology, Inc. Apparatuses and methods for in-memory operations
US10147467B2 (en) 2017-04-17 2018-12-04 Micron Technology, Inc. Element value comparison in memory
US10043570B1 (en) 2017-04-17 2018-08-07 Micron Technology, Inc. Signed element compare in memory
US9997212B1 (en) 2017-04-24 2018-06-12 Micron Technology, Inc. Accessing data in memory
US10942843B2 (en) 2017-04-25 2021-03-09 Micron Technology, Inc. Storing data elements of different lengths in respective adjacent rows or columns according to memory shapes
US10236038B2 (en) 2017-05-15 2019-03-19 Micron Technology, Inc. Bank to bank data transfer
US10068664B1 (en) 2017-05-19 2018-09-04 Micron Technology, Inc. Column repair in memory
US10013197B1 (en) 2017-06-01 2018-07-03 Micron Technology, Inc. Shift skip
US10262701B2 (en) 2017-06-07 2019-04-16 Micron Technology, Inc. Data transfer between subarrays in memory
US10152271B1 (en) 2017-06-07 2018-12-11 Micron Technology, Inc. Data replication
US10318168B2 (en) 2017-06-19 2019-06-11 Micron Technology, Inc. Apparatuses and methods for simultaneous in data path compute operations
US10162005B1 (en) 2017-08-09 2018-12-25 Micron Technology, Inc. Scan chain operations
US10534553B2 (en) 2017-08-30 2020-01-14 Micron Technology, Inc. Memory array accessibility
US10416927B2 (en) 2017-08-31 2019-09-17 Micron Technology, Inc. Processing in memory
US10346092B2 (en) 2017-08-31 2019-07-09 Micron Technology, Inc. Apparatuses and methods for in-memory operations using timing circuitry
US10741239B2 (en) 2017-08-31 2020-08-11 Micron Technology, Inc. Processing in memory device including a row address strobe manager
US10043557B1 (en) 2017-10-10 2018-08-07 Micron Technology, Inc. Apparatuses and methods for parallel I/O operations in a memory
US10409739B2 (en) 2017-10-24 2019-09-10 Micron Technology, Inc. Command selection policy
JP6439026B1 (ja) * 2017-11-17 2018-12-19 ウィンボンド エレクトロニクス コーポレーション 半導体記憶装置
US10522210B2 (en) 2017-12-14 2019-12-31 Micron Technology, Inc. Apparatuses and methods for subarray addressing
US10332586B1 (en) 2017-12-19 2019-06-25 Micron Technology, Inc. Apparatuses and methods for subrow addressing
US10614875B2 (en) 2018-01-30 2020-04-07 Micron Technology, Inc. Logical operations using memory cells
US10437557B2 (en) 2018-01-31 2019-10-08 Micron Technology, Inc. Determination of a match between data values stored by several arrays
US11194477B2 (en) 2018-01-31 2021-12-07 Micron Technology, Inc. Determination of a match between data values stored by three or more arrays
US10725696B2 (en) 2018-04-12 2020-07-28 Micron Technology, Inc. Command selection policy with read priority
US10440341B1 (en) 2018-06-07 2019-10-08 Micron Technology, Inc. Image processor formed in an array of memory cells
US11175915B2 (en) 2018-10-10 2021-11-16 Micron Technology, Inc. Vector registers implemented in memory
US10769071B2 (en) 2018-10-10 2020-09-08 Micron Technology, Inc. Coherent memory access
US10483978B1 (en) 2018-10-16 2019-11-19 Micron Technology, Inc. Memory device processing
KR20200048318A (ko) * 2018-10-29 2020-05-08 에스케이하이닉스 주식회사 저장 장치 및 그 동작 방법
US11049579B2 (en) 2018-11-18 2021-06-29 Fu-Chang Hsu Methods and apparatus for NAND flash memory
WO2020102815A1 (en) 2018-11-18 2020-05-22 NEO Semiconductor, Inc. Methods and apparatus for nand flash memory
JP6677786B1 (ja) * 2018-11-20 2020-04-08 力晶積成電子製造股▲ふん▼有限公司Ｐｏｗｅｒｃｈｉｐ Ｓｅｍｉｃｏｎｄｕｃｔｏｒ Ｍａｎｕｆａｃｔｕｒｉｎｇ Ｃｏｒｐｏｒａｔｉｏｎ ページバッファ回路及び不揮発性記憶装置
US11184446B2 (en) 2018-12-05 2021-11-23 Micron Technology, Inc. Methods and apparatus for incentivizing participation in fog networks
US10832763B2 (en) * 2018-12-18 2020-11-10 International Business Machines Corporation Global bit line latch performance and power optimization
US10755790B2 (en) * 2019-01-23 2020-08-25 Macronix International Co., Ltd. Boosted voltage driver for bit lines and other circuit nodes
KR20200098009A (ko) 2019-02-11 2020-08-20 삼성전자주식회사 비휘발성 메모리 장치 및 그 동작 방법
JP7313889B2 (ja) 2019-04-24 2023-07-25 キオクシア株式会社 半導体記憶装置及びメモリシステム
CN113490983B (zh) * 2019-05-05 2022-09-20 许富菖 用于nand闪速存储器的方法和装置
US10867655B1 (en) 2019-07-08 2020-12-15 Micron Technology, Inc. Methods and apparatus for dynamically adjusting performance of partitioned memory
US11360768B2 (en) 2019-08-14 2022-06-14 Micron Technolgy, Inc. Bit string operations in memory
US11449577B2 (en) 2019-11-20 2022-09-20 Micron Technology, Inc. Methods and apparatus for performing video processing matrix operations within a memory array
US11853385B2 (en) 2019-12-05 2023-12-26 Micron Technology, Inc. Methods and apparatus for performing diversity matrix operations within a memory array
US11087800B1 (en) * 2020-04-10 2021-08-10 Sandisk Technologies Llc Sense amplifier architecture providing small swing voltage sensing
US11227641B1 (en) 2020-07-21 2022-01-18 Micron Technology, Inc. Arithmetic operations in memory
US11562791B1 (en) * 2021-08-09 2023-01-24 Micron Technology, Inc. Memory devices with four data line bias levels
EP4138080A1 (de) * 2021-08-18 2023-02-22 Samsung Electronics Co., Ltd. Speichervorrichtung, betriebsverfahren einer speichervorrichtung und in der speichervorrichtung enthaltener seitenpuffer

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US525635A (en) * 1894-09-04 Thick
JPS57152586A (en) * 1981-03-18 1982-09-20 Nec Corp Driving method of detecting amplifying circuit
JPS57191890A (en) * 1981-05-19 1982-11-25 Nec Corp Detecting and amplifying circuit
US4547685A (en) * 1983-10-21 1985-10-15 Advanced Micro Devices, Inc. Sense amplifier circuit for semiconductor memories
US5163021A (en) * 1989-04-13 1992-11-10 Sundisk Corporation Multi-state EEprom read and write circuits and techniques
JPH04121893A (ja) * 1990-09-12 1992-04-22 Mitsubishi Electric Corp 半導体記憶装置
US5602789A (en) * 1991-03-12 1997-02-11 Kabushiki Kaisha Toshiba Electrically erasable and programmable non-volatile and multi-level memory systemn with write-verify controller
US5361227A (en) * 1991-12-19 1994-11-01 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device and memory system using the same
JP3183699B2 (ja) * 1992-03-13 2001-07-09 沖電気工業株式会社 半導体記憶装置
JP3798810B2 (ja) 1994-06-02 2006-07-19 インテル・コーポレーション セル当たり単一ビットからセル当たり複数ビットへのダイナミック・メモリ
JP3153730B2 (ja) 1995-05-16 2001-04-09 株式会社東芝 不揮発性半導体記憶装置
KR100218244B1 (ko) * 1995-05-27 1999-09-01 윤종용 불휘발성 반도체 메모리의 데이터 독출회로
KR0177776B1 (ko) * 1995-08-23 1999-04-15 김광호 고집적 반도체 메모리 장치의 데이타 센싱회로
JP3392604B2 (ja) * 1995-11-14 2003-03-31 株式会社東芝 不揮発性半導体記憶装置
US5903495A (en) * 1996-03-18 1999-05-11 Kabushiki Kaisha Toshiba Semiconductor device and memory system
KR100244864B1 (ko) * 1996-03-18 2000-03-02 니시무로 타이죠 불휘발성 반도체 기억 장치
JP3843486B2 (ja) 1996-06-19 2006-11-08 ソニー株式会社 不揮発性半導体記憶装置
JPH1092186A (ja) 1996-09-12 1998-04-10 Hitachi Ltd 半導体記憶装置
KR100205240B1 (ko) * 1996-09-13 1999-07-01 윤종용 단일 비트 및 다중 비트 셀들이 장착된 불휘발성 반도체 메모리 장치
JP3481817B2 (ja) * 1997-04-07 2003-12-22 株式会社東芝 半導体記憶装置
JP3517081B2 (ja) * 1997-05-22 2004-04-05 株式会社東芝 多値不揮発性半導体記憶装置
JP4146006B2 (ja) * 1998-09-28 2008-09-03 富士通株式会社 フラッシュメモリを有する電子機器
IT1306964B1 (it) * 1999-01-19 2001-10-11 St Microelectronics Srl Circuito a boosting capacitivo per la regolazione della tensione dilettura di riga in memorie non-volatili

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