DE60128134D1 - Gallium nitrid materialen und verfahren zur herstellung von schichten dieser materialen - Google Patents
Gallium nitrid materialen und verfahren zur herstellung von schichten dieser materialenInfo
- Publication number
- DE60128134D1 DE60128134D1 DE60128134T DE60128134T DE60128134D1 DE 60128134 D1 DE60128134 D1 DE 60128134D1 DE 60128134 T DE60128134 T DE 60128134T DE 60128134 T DE60128134 T DE 60128134T DE 60128134 D1 DE60128134 D1 DE 60128134D1
- Authority
- DE
- Germany
- Prior art keywords
- gallium nitride
- nitride material
- semiconductor materials
- material layer
- nitride materials
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000463 material Substances 0.000 title abstract 13
- 229910002601 GaN Inorganic materials 0.000 title abstract 7
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title abstract 7
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 5
- 239000000758 substrate Substances 0.000 abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 230000007704 transition Effects 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 1
- 238000004377 microelectronic Methods 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 abstract 1
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- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
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Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/736,972 US6649287B2 (en) | 2000-12-14 | 2000-12-14 | Gallium nitride materials and methods |
US736972 | 2000-12-14 | ||
PCT/US2001/048426 WO2002048434A2 (en) | 2000-12-14 | 2001-12-14 | Gallium nitride materials and methods for forming layers thereof |
Publications (2)
Publication Number | Publication Date |
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DE60128134D1 true DE60128134D1 (de) | 2007-06-06 |
DE60128134T2 DE60128134T2 (de) | 2007-12-27 |
Family
ID=24962082
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60128134T Expired - Lifetime DE60128134T2 (de) | 2000-12-14 | 2001-12-14 | Gallium nitrid materialen und verfahren zur herstellung von schichten dieser materialen |
Country Status (8)
Country | Link |
---|---|
US (17) | US6649287B2 (de) |
EP (1) | EP1343927B1 (de) |
JP (1) | JP2004524250A (de) |
AT (1) | ATE360713T1 (de) |
AU (1) | AU2002230868A1 (de) |
DE (1) | DE60128134T2 (de) |
TW (1) | TWI257142B (de) |
WO (1) | WO2002048434A2 (de) |
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- 2001-12-14 EP EP01991120A patent/EP1343927B1/de not_active Expired - Lifetime
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- 2001-12-14 JP JP2002550144A patent/JP2004524250A/ja active Pending
- 2001-12-14 AU AU2002230868A patent/AU2002230868A1/en not_active Abandoned
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