DE60128301D1 - Schleifmittelzusammensetzung und dieses gebrauchendes Polierverfahren - Google Patents
Schleifmittelzusammensetzung und dieses gebrauchendes PolierverfahrenInfo
- Publication number
- DE60128301D1 DE60128301D1 DE60128301T DE60128301T DE60128301D1 DE 60128301 D1 DE60128301 D1 DE 60128301D1 DE 60128301 T DE60128301 T DE 60128301T DE 60128301 T DE60128301 T DE 60128301T DE 60128301 D1 DE60128301 D1 DE 60128301D1
- Authority
- DE
- Germany
- Prior art keywords
- layer
- polishing method
- abrasive composition
- abrasive
- copper
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
- C23F3/06—Heavy metals with acidic solutions
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000253349 | 2000-08-24 | ||
JP2000253349A JP2002075927A (ja) | 2000-08-24 | 2000-08-24 | 研磨用組成物およびそれを用いた研磨方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60128301D1 true DE60128301D1 (de) | 2007-06-21 |
DE60128301T2 DE60128301T2 (de) | 2008-01-10 |
Family
ID=18742455
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60128301T Expired - Fee Related DE60128301T2 (de) | 2000-08-24 | 2001-08-21 | Schleifmittelzusammensetzung und diese verwendendes Polierverfahren |
Country Status (8)
Country | Link |
---|---|
US (1) | US6440186B1 (de) |
EP (1) | EP1182242B1 (de) |
JP (1) | JP2002075927A (de) |
KR (1) | KR20020016596A (de) |
CN (1) | CN1216112C (de) |
AT (1) | ATE361960T1 (de) |
DE (1) | DE60128301T2 (de) |
TW (1) | TW539735B (de) |
Families Citing this family (68)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002164307A (ja) * | 2000-11-24 | 2002-06-07 | Fujimi Inc | 研磨用組成物およびそれを用いた研磨方法 |
JP2002231666A (ja) * | 2001-01-31 | 2002-08-16 | Fujimi Inc | 研磨用組成物およびそれを用いた研磨方法 |
US7128825B2 (en) | 2001-03-14 | 2006-10-31 | Applied Materials, Inc. | Method and composition for polishing a substrate |
US7160432B2 (en) | 2001-03-14 | 2007-01-09 | Applied Materials, Inc. | Method and composition for polishing a substrate |
US7582564B2 (en) | 2001-03-14 | 2009-09-01 | Applied Materials, Inc. | Process and composition for conductive material removal by electrochemical mechanical polishing |
US6899804B2 (en) * | 2001-12-21 | 2005-05-31 | Applied Materials, Inc. | Electrolyte composition and treatment for electrolytic chemical mechanical polishing |
US7232514B2 (en) | 2001-03-14 | 2007-06-19 | Applied Materials, Inc. | Method and composition for polishing a substrate |
US6811680B2 (en) | 2001-03-14 | 2004-11-02 | Applied Materials Inc. | Planarization of substrates using electrochemical mechanical polishing |
US7323416B2 (en) | 2001-03-14 | 2008-01-29 | Applied Materials, Inc. | Method and composition for polishing a substrate |
WO2003005431A1 (fr) * | 2001-07-04 | 2003-01-16 | Seimi Chemical Co., Ltd. | Suspension de polissage chimico-mecanique destinee a un circuit integre a semi-conducteurs, procede de polissage et circuit integre a semi-conducteurs |
SG144688A1 (en) | 2001-07-23 | 2008-08-28 | Fujimi Inc | Polishing composition and polishing method employing it |
JP4954398B2 (ja) | 2001-08-09 | 2012-06-13 | 株式会社フジミインコーポレーテッド | 研磨用組成物およびそれを用いた研磨方法 |
JP3692067B2 (ja) * | 2001-11-30 | 2005-09-07 | 株式会社東芝 | 銅のcmp用研磨スラリーおよびそれを用いた半導体装置の製造方法 |
JP2003257910A (ja) * | 2001-12-28 | 2003-09-12 | Fujikoshi Mach Corp | 基板における銅層の研磨方法 |
TWI282360B (en) * | 2002-06-03 | 2007-06-11 | Hitachi Chemical Co Ltd | Polishing composition and polishing method thereof |
JP2004071673A (ja) * | 2002-08-02 | 2004-03-04 | Nec Electronics Corp | 銅系金属研磨スラリー |
JP4083502B2 (ja) * | 2002-08-19 | 2008-04-30 | 株式会社フジミインコーポレーテッド | 研磨方法及びそれに用いられる研磨用組成物 |
JP3981616B2 (ja) * | 2002-10-02 | 2007-09-26 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
US7300601B2 (en) * | 2002-12-10 | 2007-11-27 | Advanced Technology Materials, Inc. | Passivative chemical mechanical polishing composition for copper film planarization |
US7736405B2 (en) * | 2003-05-12 | 2010-06-15 | Advanced Technology Materials, Inc. | Chemical mechanical polishing compositions for copper and associated materials and method of using same |
JP2004363524A (ja) * | 2003-06-09 | 2004-12-24 | Matsushita Electric Ind Co Ltd | 埋め込み配線の形成方法および半導体装置 |
US7037351B2 (en) * | 2003-07-09 | 2006-05-02 | Dynea Chemicals Oy | Non-polymeric organic particles for chemical mechanical planarization |
US20050022456A1 (en) * | 2003-07-30 | 2005-02-03 | Babu S. V. | Polishing slurry and method for chemical-mechanical polishing of copper |
US7186653B2 (en) * | 2003-07-30 | 2007-03-06 | Climax Engineered Materials, Llc | Polishing slurries and methods for chemical mechanical polishing |
JP4608196B2 (ja) * | 2003-09-30 | 2011-01-05 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
CN100435290C (zh) * | 2003-09-30 | 2008-11-19 | 福吉米株式会社 | 研磨用组合物及研磨方法 |
US7485162B2 (en) | 2003-09-30 | 2009-02-03 | Fujimi Incorporated | Polishing composition |
US20050092620A1 (en) * | 2003-10-01 | 2005-05-05 | Applied Materials, Inc. | Methods and apparatus for polishing a substrate |
US7153335B2 (en) * | 2003-10-10 | 2006-12-26 | Dupont Air Products Nanomaterials Llc | Tunable composition and method for chemical-mechanical planarization with aspartic acid/tolyltriazole |
JP2007515707A (ja) | 2003-11-27 | 2007-06-14 | スマート インターネット テクノロジー シーアールシー ピーティワイ リミテッド | 通信を行うシステムおよび方法 |
JP2005203729A (ja) * | 2003-12-19 | 2005-07-28 | Ebara Corp | 基板研磨装置 |
KR100588404B1 (ko) * | 2004-03-16 | 2006-06-12 | 삼성코닝 주식회사 | 반도체 박막 연마용 산화세륨 슬러리 |
JP2005268664A (ja) * | 2004-03-19 | 2005-09-29 | Fujimi Inc | 研磨用組成物 |
JP2005268666A (ja) * | 2004-03-19 | 2005-09-29 | Fujimi Inc | 研磨用組成物 |
JP4316406B2 (ja) * | 2004-03-22 | 2009-08-19 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
JP4644434B2 (ja) * | 2004-03-24 | 2011-03-02 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
JP4814502B2 (ja) * | 2004-09-09 | 2011-11-16 | 株式会社フジミインコーポレーテッド | 研磨用組成物及びそれを用いた研磨方法 |
JP2006086462A (ja) * | 2004-09-17 | 2006-03-30 | Fujimi Inc | 研磨用組成物およびそれを用いた配線構造体の製造法 |
US7524347B2 (en) * | 2004-10-28 | 2009-04-28 | Cabot Microelectronics Corporation | CMP composition comprising surfactant |
JP2006135072A (ja) * | 2004-11-05 | 2006-05-25 | Fujimi Inc | 研磨方法 |
US7531105B2 (en) * | 2004-11-05 | 2009-05-12 | Cabot Microelectronics Corporation | Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios |
US7504044B2 (en) * | 2004-11-05 | 2009-03-17 | Cabot Microelectronics Corporation | Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios |
CN100375770C (zh) * | 2005-01-17 | 2008-03-19 | 上海大学 | 核/壳型纳米粒子研磨剂抛光液组合物及其制备方法 |
CN1854236B (zh) * | 2005-04-21 | 2011-08-03 | 安集微电子(上海)有限公司 | 抛光浆料及其用途 |
WO2006133249A2 (en) * | 2005-06-06 | 2006-12-14 | Advanced Technology Materials, Inc. | Integrated chemical mechanical polishing composition and process for single platen processing |
JP5026710B2 (ja) * | 2005-09-02 | 2012-09-19 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
KR101278666B1 (ko) * | 2005-09-02 | 2013-06-25 | 가부시키가이샤 후지미인코퍼레이티드 | 연마용 조성물 |
US20070068902A1 (en) * | 2005-09-29 | 2007-03-29 | Yasushi Matsunami | Polishing composition and polishing method |
US20070209287A1 (en) * | 2006-03-13 | 2007-09-13 | Cabot Microelectronics Corporation | Composition and method to polish silicon nitride |
US8759216B2 (en) * | 2006-06-07 | 2014-06-24 | Cabot Microelectronics Corporation | Compositions and methods for polishing silicon nitride materials |
SG139699A1 (en) | 2006-08-02 | 2008-02-29 | Fujimi Inc | Polishing composition and polishing process |
US20100087065A1 (en) * | 2007-01-31 | 2010-04-08 | Advanced Technology Materials, Inc. | Stabilization of polymer-silica dispersions for chemical mechanical polishing slurry applications |
DE102007035833B3 (de) * | 2007-07-31 | 2009-03-12 | Advanced Micro Devices, Inc., Sunnyvale | Fortgeschrittene automatische Abscheideprofilzielsteuerung und Kontrolle durch Anwendung von fortgeschrittener Polierendpunktsystemrückkopplung |
JP2009164186A (ja) * | 2007-12-28 | 2009-07-23 | Fujimi Inc | 研磨用組成物 |
JP2009164188A (ja) * | 2007-12-28 | 2009-07-23 | Fujimi Inc | 研磨用組成物 |
US7922926B2 (en) | 2008-01-08 | 2011-04-12 | Cabot Microelectronics Corporation | Composition and method for polishing nickel-phosphorous-coated aluminum hard disks |
US8523968B2 (en) * | 2008-12-23 | 2013-09-03 | Saint-Gobain Abrasives, Inc. | Abrasive article with improved packing density and mechanical properties and method of making |
JP5587620B2 (ja) * | 2010-01-25 | 2014-09-10 | 株式会社フジミインコーポレーテッド | 研磨用組成物及びそれを用いた研磨方法 |
CN102373014A (zh) * | 2010-08-24 | 2012-03-14 | 安集微电子(上海)有限公司 | 一种化学机械抛光液 |
CN102199400A (zh) * | 2011-03-25 | 2011-09-28 | 江南大学 | 适用于精细雾化cmp的铜抛光液 |
KR101238773B1 (ko) * | 2011-04-15 | 2013-03-11 | 서울대학교산학협력단 | 구리 화학적 기계적 연마용 슬러리 조성물 |
KR20140019372A (ko) * | 2011-06-03 | 2014-02-14 | 아사히 가라스 가부시키가이샤 | 연마제 및 연마 방법 |
US9039914B2 (en) | 2012-05-23 | 2015-05-26 | Cabot Microelectronics Corporation | Polishing composition for nickel-phosphorous-coated memory disks |
SG11201502766QA (en) * | 2012-11-02 | 2015-05-28 | Fujimi Inc | Polishing composition |
US8974692B2 (en) | 2013-06-27 | 2015-03-10 | Air Products And Chemicals, Inc. | Chemical mechanical polishing slurry compositions and method using the same for copper and through-silicon via applications |
CN103409757B (zh) * | 2013-08-26 | 2016-01-20 | 中核(天津)科技发展有限公司 | 一种环保型铜制品用化学抛光液及其制备方法 |
EP3169737B1 (de) * | 2014-07-15 | 2018-10-10 | Basf Se | Chemisch-mechanische polierzusammensetzung |
CN115056131A (zh) * | 2022-03-21 | 2022-09-16 | 康劲 | 多层铜布线cmp中通过螯合剂修复d坑和蚀坑的方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3397501B2 (ja) * | 1994-07-12 | 2003-04-14 | 株式会社東芝 | 研磨剤および研磨方法 |
US5954997A (en) * | 1996-12-09 | 1999-09-21 | Cabot Corporation | Chemical mechanical polishing slurry useful for copper substrates |
US6309560B1 (en) | 1996-12-09 | 2001-10-30 | Cabot Microelectronics Corporation | Chemical mechanical polishing slurry useful for copper substrates |
US6083419A (en) * | 1997-07-28 | 2000-07-04 | Cabot Corporation | Polishing composition including an inhibitor of tungsten etching |
US6063306A (en) * | 1998-06-26 | 2000-05-16 | Cabot Corporation | Chemical mechanical polishing slurry useful for copper/tantalum substrate |
CN1126152C (zh) * | 1998-08-31 | 2003-10-29 | 长兴化学工业股份有限公司 | 半导体制程用的化学机械研磨组合物 |
JP4053165B2 (ja) * | 1998-12-01 | 2008-02-27 | 株式会社フジミインコーポレーテッド | 研磨用組成物およびそれを用いた研磨方法 |
WO2000039844A1 (en) * | 1998-12-28 | 2000-07-06 | Hitachi Chemical Company, Ltd. | Materials for polishing liquid for metal, polishing liquid for metal, method for preparation thereof and polishing method using the same |
KR100447551B1 (ko) | 1999-01-18 | 2004-09-08 | 가부시끼가이샤 도시바 | 복합 입자 및 그의 제조 방법, 수계 분산체, 화학 기계연마용 수계 분산체 조성물 및 반도체 장치의 제조 방법 |
TW499471B (en) * | 1999-09-01 | 2002-08-21 | Eternal Chemical Co Ltd | Chemical mechanical/abrasive composition for semiconductor processing |
-
2000
- 2000-08-24 JP JP2000253349A patent/JP2002075927A/ja active Pending
-
2001
- 2001-08-15 US US09/928,996 patent/US6440186B1/en not_active Expired - Lifetime
- 2001-08-15 TW TW090120020A patent/TW539735B/zh not_active IP Right Cessation
- 2001-08-21 EP EP01307117A patent/EP1182242B1/de not_active Expired - Lifetime
- 2001-08-21 DE DE60128301T patent/DE60128301T2/de not_active Expired - Fee Related
- 2001-08-21 AT AT01307117T patent/ATE361960T1/de not_active IP Right Cessation
- 2001-08-22 CN CN011222980A patent/CN1216112C/zh not_active Expired - Fee Related
- 2001-08-24 KR KR1020010051445A patent/KR20020016596A/ko not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
CN1216112C (zh) | 2005-08-24 |
KR20020016596A (ko) | 2002-03-04 |
TW539735B (en) | 2003-07-01 |
CN1340583A (zh) | 2002-03-20 |
US20020043027A1 (en) | 2002-04-18 |
DE60128301T2 (de) | 2008-01-10 |
EP1182242B1 (de) | 2007-05-09 |
EP1182242A1 (de) | 2002-02-27 |
US6440186B1 (en) | 2002-08-27 |
ATE361960T1 (de) | 2007-06-15 |
JP2002075927A (ja) | 2002-03-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |