DE60128301D1 - Schleifmittelzusammensetzung und dieses gebrauchendes Polierverfahren - Google Patents

Schleifmittelzusammensetzung und dieses gebrauchendes Polierverfahren

Info

Publication number
DE60128301D1
DE60128301D1 DE60128301T DE60128301T DE60128301D1 DE 60128301 D1 DE60128301 D1 DE 60128301D1 DE 60128301 T DE60128301 T DE 60128301T DE 60128301 T DE60128301 T DE 60128301T DE 60128301 D1 DE60128301 D1 DE 60128301D1
Authority
DE
Germany
Prior art keywords
layer
polishing method
abrasive composition
abrasive
copper
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60128301T
Other languages
English (en)
Other versions
DE60128301T2 (de
Inventor
Kenji Sakai
Hiroshi Asano
Tadahiro Kitamura
Katsuyoshi Ina
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujimi Inc
Original Assignee
Fujimi Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujimi Inc filed Critical Fujimi Inc
Application granted granted Critical
Publication of DE60128301D1 publication Critical patent/DE60128301D1/de
Publication of DE60128301T2 publication Critical patent/DE60128301T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • C23F3/06—Heavy metals with acidic solutions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
DE60128301T 2000-08-24 2001-08-21 Schleifmittelzusammensetzung und diese verwendendes Polierverfahren Expired - Fee Related DE60128301T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000253349A JP2002075927A (ja) 2000-08-24 2000-08-24 研磨用組成物およびそれを用いた研磨方法
JP2000253349 2000-08-24

Publications (2)

Publication Number Publication Date
DE60128301D1 true DE60128301D1 (de) 2007-06-21
DE60128301T2 DE60128301T2 (de) 2008-01-10

Family

ID=18742455

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60128301T Expired - Fee Related DE60128301T2 (de) 2000-08-24 2001-08-21 Schleifmittelzusammensetzung und diese verwendendes Polierverfahren

Country Status (8)

Country Link
US (1) US6440186B1 (de)
EP (1) EP1182242B1 (de)
JP (1) JP2002075927A (de)
KR (1) KR20020016596A (de)
CN (1) CN1216112C (de)
AT (1) ATE361960T1 (de)
DE (1) DE60128301T2 (de)
TW (1) TW539735B (de)

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JP2002231666A (ja) * 2001-01-31 2002-08-16 Fujimi Inc 研磨用組成物およびそれを用いた研磨方法
US6899804B2 (en) * 2001-12-21 2005-05-31 Applied Materials, Inc. Electrolyte composition and treatment for electrolytic chemical mechanical polishing
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US7582564B2 (en) 2001-03-14 2009-09-01 Applied Materials, Inc. Process and composition for conductive material removal by electrochemical mechanical polishing
US7128825B2 (en) 2001-03-14 2006-10-31 Applied Materials, Inc. Method and composition for polishing a substrate
US6811680B2 (en) 2001-03-14 2004-11-02 Applied Materials Inc. Planarization of substrates using electrochemical mechanical polishing
US7160432B2 (en) 2001-03-14 2007-01-09 Applied Materials, Inc. Method and composition for polishing a substrate
US7323416B2 (en) 2001-03-14 2008-01-29 Applied Materials, Inc. Method and composition for polishing a substrate
JPWO2003005431A1 (ja) * 2001-07-04 2004-10-28 セイミケミカル株式会社 半導体集積回路用化学機械的研磨スラリー、研磨方法、及び半導体集積回路
SG144688A1 (en) 2001-07-23 2008-08-28 Fujimi Inc Polishing composition and polishing method employing it
JP4954398B2 (ja) 2001-08-09 2012-06-13 株式会社フジミインコーポレーテッド 研磨用組成物およびそれを用いた研磨方法
JP3692067B2 (ja) * 2001-11-30 2005-09-07 株式会社東芝 銅のｃｍｐ用研磨スラリーおよびそれを用いた半導体装置の製造方法
JP2003257910A (ja) * 2001-12-28 2003-09-12 Fujikoshi Mach Corp 基板における銅層の研磨方法
TWI282360B (en) * 2002-06-03 2007-06-11 Hitachi Chemical Co Ltd Polishing composition and polishing method thereof
JP2004071673A (ja) * 2002-08-02 2004-03-04 Nec Electronics Corp 銅系金属研磨スラリー
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JP3981616B2 (ja) * 2002-10-02 2007-09-26 株式会社フジミインコーポレーテッド 研磨用組成物
US7300601B2 (en) * 2002-12-10 2007-11-27 Advanced Technology Materials, Inc. Passivative chemical mechanical polishing composition for copper film planarization
US7736405B2 (en) * 2003-05-12 2010-06-15 Advanced Technology Materials, Inc. Chemical mechanical polishing compositions for copper and associated materials and method of using same
JP2004363524A (ja) * 2003-06-09 2004-12-24 Matsushita Electric Ind Co Ltd 埋め込み配線の形成方法および半導体装置
US7037351B2 (en) * 2003-07-09 2006-05-02 Dynea Chemicals Oy Non-polymeric organic particles for chemical mechanical planarization
US7186653B2 (en) * 2003-07-30 2007-03-06 Climax Engineered Materials, Llc Polishing slurries and methods for chemical mechanical polishing
US20050022456A1 (en) * 2003-07-30 2005-02-03 Babu S. V. Polishing slurry and method for chemical-mechanical polishing of copper
JP4608196B2 (ja) * 2003-09-30 2011-01-05 株式会社フジミインコーポレーテッド 研磨用組成物
ATE463838T1 (de) * 2003-09-30 2010-04-15 Fujimi Inc Polierzusammensetzung und polierverfahren
US7485162B2 (en) 2003-09-30 2009-02-03 Fujimi Incorporated Polishing composition
US20050092620A1 (en) * 2003-10-01 2005-05-05 Applied Materials, Inc. Methods and apparatus for polishing a substrate
US7153335B2 (en) * 2003-10-10 2006-12-26 Dupont Air Products Nanomaterials Llc Tunable composition and method for chemical-mechanical planarization with aspartic acid/tolyltriazole
KR20060126520A (ko) 2003-11-27 2006-12-07 스마트 인터넷 테크놀로지 씨알씨 피티와이 엘티디 통신 시스템 및 통신 방법
JP2005203729A (ja) * 2003-12-19 2005-07-28 Ebara Corp 基板研磨装置
TWI370843B (en) * 2004-03-16 2012-08-21 Samsung Corning Prec Mat Co Ceria slurry for polishing semiconductor thin layer
JP2005268664A (ja) * 2004-03-19 2005-09-29 Fujimi Inc 研磨用組成物
JP2005268666A (ja) * 2004-03-19 2005-09-29 Fujimi Inc 研磨用組成物
JP4316406B2 (ja) * 2004-03-22 2009-08-19 株式会社フジミインコーポレーテッド 研磨用組成物
JP4644434B2 (ja) * 2004-03-24 2011-03-02 株式会社フジミインコーポレーテッド 研磨用組成物
JP4814502B2 (ja) * 2004-09-09 2011-11-16 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
JP2006086462A (ja) * 2004-09-17 2006-03-30 Fujimi Inc 研磨用組成物およびそれを用いた配線構造体の製造法
US7524347B2 (en) * 2004-10-28 2009-04-28 Cabot Microelectronics Corporation CMP composition comprising surfactant
US7531105B2 (en) * 2004-11-05 2009-05-12 Cabot Microelectronics Corporation Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
US7504044B2 (en) 2004-11-05 2009-03-17 Cabot Microelectronics Corporation Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
JP2006135072A (ja) * 2004-11-05 2006-05-25 Fujimi Inc 研磨方法
CN100375770C (zh) * 2005-01-17 2008-03-19 上海大学 核/壳型纳米粒子研磨剂抛光液组合物及其制备方法
CN1854236B (zh) * 2005-04-21 2011-08-03 安集微电子（上海）有限公司 抛光浆料及其用途
TWI434957B (zh) * 2005-06-06 2014-04-21 Advanced Tech Materials 單板製程用之整合化學機械拋光組成物及方法
JP5026710B2 (ja) * 2005-09-02 2012-09-19 株式会社フジミインコーポレーテッド 研磨用組成物
WO2007026862A1 (ja) * 2005-09-02 2007-03-08 Fujimi Incorporated 研磨用組成物
US20070068902A1 (en) * 2005-09-29 2007-03-29 Yasushi Matsunami Polishing composition and polishing method
US20070209287A1 (en) * 2006-03-13 2007-09-13 Cabot Microelectronics Corporation Composition and method to polish silicon nitride
US8759216B2 (en) * 2006-06-07 2014-06-24 Cabot Microelectronics Corporation Compositions and methods for polishing silicon nitride materials
SG139699A1 (en) 2006-08-02 2008-02-29 Fujimi Inc Polishing composition and polishing process
US20100087065A1 (en) * 2007-01-31 2010-04-08 Advanced Technology Materials, Inc. Stabilization of polymer-silica dispersions for chemical mechanical polishing slurry applications
DE102007035833B3 (de) * 2007-07-31 2009-03-12 Advanced Micro Devices, Inc., Sunnyvale Fortgeschrittene automatische Abscheideprofilzielsteuerung und Kontrolle durch Anwendung von fortgeschrittener Polierendpunktsystemrückkopplung
JP2009164188A (ja) * 2007-12-28 2009-07-23 Fujimi Inc 研磨用組成物
JP2009164186A (ja) * 2007-12-28 2009-07-23 Fujimi Inc 研磨用組成物
US7922926B2 (en) * 2008-01-08 2011-04-12 Cabot Microelectronics Corporation Composition and method for polishing nickel-phosphorous-coated aluminum hard disks
US8523968B2 (en) * 2008-12-23 2013-09-03 Saint-Gobain Abrasives, Inc. Abrasive article with improved packing density and mechanical properties and method of making
JP5587620B2 (ja) * 2010-01-25 2014-09-10 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
CN102373014A (zh) * 2010-08-24 2012-03-14 安集微电子（上海）有限公司 一种化学机械抛光液
CN102199400A (zh) * 2011-03-25 2011-09-28 江南大学 适用于精细雾化cmp的铜抛光液
KR101238773B1 (ko) * 2011-04-15 2013-03-11 서울대학교산학협력단 구리 화학적 기계적 연마용 슬러리 조성물
JPWO2012165376A1 (ja) * 2011-06-03 2015-02-23 旭硝子株式会社 研磨剤および研磨方法
US9039914B2 (en) 2012-05-23 2015-05-26 Cabot Microelectronics Corporation Polishing composition for nickel-phosphorous-coated memory disks
DE112013005268T5 (de) * 2012-11-02 2015-09-24 Fujimi Incorporated Polierzusammensetzung
US8974692B2 (en) 2013-06-27 2015-03-10 Air Products And Chemicals, Inc. Chemical mechanical polishing slurry compositions and method using the same for copper and through-silicon via applications
CN103409757B (zh) * 2013-08-26 2016-01-20 中核(天津)科技发展有限公司 一种环保型铜制品用化学抛光液及其制备方法
CN106661382B (zh) * 2014-07-15 2020-03-24 巴斯夫欧洲公司 化学机械抛光(cmp)组合物
CN115056131A (zh) * 2022-03-21 2022-09-16 康劲 多层铜布线cmp中通过螯合剂修复d坑和蚀坑的方法

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Also Published As

Publication number Publication date
CN1340583A (zh) 2002-03-20
TW539735B (en) 2003-07-01
KR20020016596A (ko) 2002-03-04
ATE361960T1 (de) 2007-06-15
DE60128301T2 (de) 2008-01-10
US20020043027A1 (en) 2002-04-18
CN1216112C (zh) 2005-08-24
US6440186B1 (en) 2002-08-27
JP2002075927A (ja) 2002-03-15
EP1182242B1 (de) 2007-05-09
EP1182242A1 (de) 2002-02-27

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee