DE60130028D1 - Schutzvorrichtung gegen elektrostatische Entladung mit gesteuertem Siliziumgleichrichter mit externem On-Chip-Triggern und kompakten inneren Abmessungen für schnelles Triggern - Google Patents

Schutzvorrichtung gegen elektrostatische Entladung mit gesteuertem Siliziumgleichrichter mit externem On-Chip-Triggern und kompakten inneren Abmessungen für schnelles Triggern

Info

Publication number
DE60130028D1
DE60130028D1 DE60130028T DE60130028T DE60130028D1 DE 60130028 D1 DE60130028 D1 DE 60130028D1 DE 60130028 T DE60130028 T DE 60130028T DE 60130028 T DE60130028 T DE 60130028T DE 60130028 D1 DE60130028 D1 DE 60130028D1
Authority
DE
Germany
Prior art keywords
triggering
external
protection device
electrostatic discharge
controlled rectifier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60130028T
Other languages
English (en)
Other versions
DE60130028T2 (de
Inventor
Leslie R Avery
Christian C Russ
Koen G M Verhaege
John Armer
Markus P J Mergens
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sofics Bvba Gistel Be
Original Assignee
Sofics Bvba
Sarnoff Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sofics Bvba, Sarnoff Corp filed Critical Sofics Bvba
Publication of DE60130028D1 publication Critical patent/DE60130028D1/de
Application granted granted Critical
Publication of DE60130028T2 publication Critical patent/DE60130028T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0259—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements
    • H01L27/0262—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements including a PNP transistor and a NPN transistor, wherein each of said transistors has its base coupled to the collector of the other transistor, e.g. silicon controlled rectifier [SCR] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
DE60130028T 2000-11-06 2001-10-24 Schutzvorrichtung gegen elektrostatische Entladung mit gesteuertem Siliziumgleichrichter mit externem On-Chip-Triggern und kompakten inneren Abmessungen für schnelles Triggern Expired - Lifetime DE60130028T2 (de)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US24612300P 2000-11-06 2000-11-06
US246123P 2000-11-06
US26617101P 2001-02-02 2001-02-02
US266171P 2001-02-02
US28034501P 2001-03-30 2001-03-30
US280345P 2001-03-30
PCT/US2001/046039 WO2002037566A2 (en) 2000-11-06 2001-10-24 Silicon controlled rectifier electrostatic discharge protection device with external on-chip triggering and compact internal dimensions for fast triggering

Publications (2)

Publication Number Publication Date
DE60130028D1 true DE60130028D1 (de) 2007-09-27
DE60130028T2 DE60130028T2 (de) 2008-06-26

Family

ID=27399903

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60130028T Expired - Lifetime DE60130028T2 (de) 2000-11-06 2001-10-24 Schutzvorrichtung gegen elektrostatische Entladung mit gesteuertem Siliziumgleichrichter mit externem On-Chip-Triggern und kompakten inneren Abmessungen für schnelles Triggern

Country Status (6)

Country Link
US (1) US6791122B2 (de)
EP (1) EP1348236B1 (de)
JP (1) JP2004531047A (de)
DE (1) DE60130028T2 (de)
TW (1) TW538520B (de)
WO (1) WO2002037566A2 (de)

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US20050275029A1 (en) * 2004-06-15 2005-12-15 Jeffrey Watt Fast turn-on and low-capacitance SCR ESD protection
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JP4974485B2 (ja) * 2005-06-28 2012-07-11 ローム株式会社 半導体集積回路装置
US7763908B2 (en) * 2005-07-25 2010-07-27 Lsi Corporation Design of silicon-controlled rectifier by considering electrostatic discharge robustness in human-body model and charged-device model devices
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US7709896B2 (en) * 2006-03-08 2010-05-04 Infineon Technologies Ag ESD protection device and method
JP2007305917A (ja) 2006-05-15 2007-11-22 Nec Electronics Corp 半導体装置
DE102006026691B4 (de) * 2006-06-08 2018-02-01 Infineon Technologies Ag ESD-Schutzschaltung und -verfahren
TWI339886B (en) * 2006-09-14 2011-04-01 Novatek Microelectronics Corp Layout structure of electrostatic discharge protection circuit and production method thereof
US7732834B2 (en) * 2007-01-26 2010-06-08 Infineon Technologies Ag Semiconductor ESD device and method of making same
US7943438B2 (en) * 2008-02-14 2011-05-17 International Business Machines Corporation Structure and method for a silicon controlled rectifier (SCR) structure for SOI technology
US7773356B2 (en) * 2008-03-19 2010-08-10 Fairchild Korea Semiconductor Ltd Stacked SCR with high holding voltage
DE102008019238A1 (de) 2008-04-17 2009-10-29 Qpx Gmbh Integrierte Schaltung mit ESD Schutz
JP2010067846A (ja) * 2008-09-11 2010-03-25 Panasonic Corp 静電放電保護回路を備えた半導体装置
US8455947B2 (en) * 2009-02-18 2013-06-04 Infineon Technologies Ag Device and method for coupling first and second device portions
JP5595751B2 (ja) * 2009-03-11 2014-09-24 ルネサスエレクトロニクス株式会社 Ｅｓｄ保護素子
US8283698B2 (en) * 2009-04-15 2012-10-09 Sofics Bvba Electrostatic discharge protection
CN101847633B (zh) * 2010-05-05 2011-10-26 北京大学 一种静电保护器件及其制备方法
CN102034857B (zh) * 2010-10-28 2011-12-14 浙江大学 一种pmos场效应晶体管辅助触发的双向可控硅
US20140167099A1 (en) 2011-03-10 2014-06-19 Qpx Gmbh Integrated circuit including silicon controlled rectifier
US8586423B2 (en) 2011-06-24 2013-11-19 International Business Machines Corporation Silicon controlled rectifier with stress-enhanced adjustable trigger voltage
US9337178B2 (en) * 2012-12-09 2016-05-10 Semiconductor Components Industries, Llc Method of forming an ESD device and structure therefor
US9882375B2 (en) * 2013-03-15 2018-01-30 Sofics Bvba High holding voltage clamp
US9685431B2 (en) 2013-09-27 2017-06-20 Sofics Bvba Semiconductor device for electrostatic discharge protection
US9948091B1 (en) * 2015-06-04 2018-04-17 Maxim Integrated Products, Inc. Integrated defibrillation pulse protector
US10446537B2 (en) * 2017-06-20 2019-10-15 Texas Instruments Incorporated Electrostatic discharge devices
JP7260153B2 (ja) * 2019-03-29 2023-04-18 ラピスセミコンダクタ株式会社 半導体装置、およびその製造方法
CN111403384B (zh) * 2020-04-28 2023-11-03 上海华力微电子有限公司 一种硅控整流器及其制造方法
US11289471B2 (en) 2020-08-24 2022-03-29 Globalfoundries U.S. Inc. Electrostatic discharge device
US20230238454A1 (en) * 2022-01-26 2023-07-27 Infineon Technologies Ag Scr structure for esd protection in soi technologies

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Also Published As

Publication number Publication date
US6791122B2 (en) 2004-09-14
EP1348236A2 (de) 2003-10-01
EP1348236B1 (de) 2007-08-15
DE60130028T2 (de) 2008-06-26
US20020053704A1 (en) 2002-05-09
WO2002037566A3 (en) 2003-07-24
WO2002037566A2 (en) 2002-05-10
JP2004531047A (ja) 2004-10-07
TW538520B (en) 2003-06-21

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: SOFICS BVBA, GISTEL, BE