DE60133619D1 - Programmier- und Löschverfahren in Zwilling-MONOS-Zellenspeichern - Google Patents
Programmier- und Löschverfahren in Zwilling-MONOS-ZellenspeichernInfo
- Publication number
- DE60133619D1 DE60133619D1 DE60133619T DE60133619T DE60133619D1 DE 60133619 D1 DE60133619 D1 DE 60133619D1 DE 60133619 T DE60133619 T DE 60133619T DE 60133619 T DE60133619 T DE 60133619T DE 60133619 D1 DE60133619 D1 DE 60133619D1
- Authority
- DE
- Germany
- Prior art keywords
- erase
- word
- gate
- channel
- speed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
- G11C16/0475—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS] comprising two or more independent storage sites which store independent data
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US25129900P | 2000-12-05 | 2000-12-05 | |
US251299P | 2000-12-05 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60133619D1 true DE60133619D1 (de) | 2008-05-29 |
DE60133619T2 DE60133619T2 (de) | 2009-06-10 |
Family
ID=22951334
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60133619T Expired - Lifetime DE60133619T2 (de) | 2000-12-05 | 2001-12-04 | Programmier- und Löschverfahren in Zwilling-MONOS-Zellenspeichern |
Country Status (8)
Country | Link |
---|---|
US (1) | US6477088B2 (de) |
EP (1) | EP1215681B1 (de) |
JP (3) | JP4422936B2 (de) |
KR (1) | KR20020071706A (de) |
CN (1) | CN100492526C (de) |
AT (1) | ATE392698T1 (de) |
DE (1) | DE60133619T2 (de) |
TW (1) | TW540055B (de) |
Families Citing this family (44)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4050048B2 (ja) | 2000-12-15 | 2008-02-20 | ヘイロ エルエスアイ インコーポレイテッド | 高速プログラムおよびプログラム検証への高速切り替え方法 |
ATE424042T1 (de) * | 2001-03-26 | 2009-03-15 | Halo Lsi Design & Device Tech | Nebenschluss- und auswahlimplementierung in einer monos-zwillingsspeicherzellenmatrix |
JP4282248B2 (ja) * | 2001-03-30 | 2009-06-17 | 株式会社東芝 | 半導体記憶装置 |
JP4715024B2 (ja) | 2001-05-08 | 2011-07-06 | セイコーエプソン株式会社 | 不揮発性半導体記憶装置のプログラム方法 |
JP2002334588A (ja) * | 2001-05-11 | 2002-11-22 | Seiko Epson Corp | 不揮発性半導体記憶装置のプログラム方法 |
US6897522B2 (en) * | 2001-10-31 | 2005-05-24 | Sandisk Corporation | Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements |
US6925007B2 (en) | 2001-10-31 | 2005-08-02 | Sandisk Corporation | Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements |
US6621736B1 (en) * | 2002-03-05 | 2003-09-16 | National Semiconductor Corporation | Method of programming a splity-gate flash memory cell with a positive inhibiting word line voltage |
TWI305046B (de) * | 2002-09-09 | 2009-01-01 | Macronix Int Co Ltd | |
US6760270B2 (en) * | 2002-09-30 | 2004-07-06 | Motorola, Inc. | Erase of a non-volatile memory |
US7394703B2 (en) * | 2002-10-15 | 2008-07-01 | Halo Lsi, Inc. | Twin insulator charge storage device operation and its fabrication method |
US6900098B1 (en) * | 2002-10-15 | 2005-05-31 | Halo Lsi, Inc. | Twin insulator charge storage device operation and its fabrication method |
US7391653B2 (en) * | 2002-10-15 | 2008-06-24 | Halo Lsi, Inc. | Twin insulator charge storage device operation and its fabrication method |
CN100583292C (zh) * | 2002-10-30 | 2010-01-20 | 哈娄利公司 | 包含双monos单元的存储装置及操作该存储装置的方法 |
CN1494086B (zh) * | 2002-10-30 | 2010-06-16 | 哈娄利公司 | 双monos金属位线阵列寻址、读取、程序化方法及装置 |
US6795342B1 (en) * | 2002-12-02 | 2004-09-21 | Advanced Micro Devices, Inc. | System for programming a non-volatile memory cell |
US7006378B1 (en) | 2002-12-23 | 2006-02-28 | Halo Lsi, Inc. | Array architecture and operation methods for a nonvolatile memory |
TW588454B (en) * | 2003-01-20 | 2004-05-21 | Amic Technology Corp | Dual-bit nitride read only memory cell |
US7085170B2 (en) * | 2003-08-07 | 2006-08-01 | Micron Technology, Ind. | Method for erasing an NROM cell |
US7123518B2 (en) * | 2004-11-22 | 2006-10-17 | United Microelectronics Crop. | Memory device |
US7474562B2 (en) * | 2004-12-07 | 2009-01-06 | Macronix International Co., Ltd. | Method of forming and operating an assisted charge memory device |
JP4902972B2 (ja) * | 2005-07-15 | 2012-03-21 | ルネサスエレクトロニクス株式会社 | 不揮発性記憶素子の制御方法 |
KR100706789B1 (ko) * | 2005-11-17 | 2007-04-12 | 삼성전자주식회사 | 비휘발성 메모리 소자 |
KR100719382B1 (ko) * | 2006-04-10 | 2007-05-18 | 삼성전자주식회사 | 세 개의 트랜지스터들이 두 개의 셀을 구성하는 비휘발성메모리 소자 |
JP2007281481A (ja) * | 2006-04-10 | 2007-10-25 | Samsung Electronics Co Ltd | 不揮発性メモリを有する半導体素子及びその形成方法 |
US7463546B2 (en) | 2006-07-31 | 2008-12-09 | Sandisk 3D Llc | Method for using a passive element memory array incorporating reversible polarity word line and bit line decoders |
US7554832B2 (en) * | 2006-07-31 | 2009-06-30 | Sandisk 3D Llc | Passive element memory array incorporating reversible polarity word line and bit line decoders |
US7499366B2 (en) * | 2006-07-31 | 2009-03-03 | Sandisk 3D Llc | Method for using dual data-dependent busses for coupling read/write circuits to a memory array |
US7486587B2 (en) * | 2006-07-31 | 2009-02-03 | Sandisk 3D Llc | Dual data-dependent busses for coupling read/write circuits to a memory array |
US8279704B2 (en) * | 2006-07-31 | 2012-10-02 | Sandisk 3D Llc | Decoder circuitry providing forward and reverse modes of memory array operation and method for biasing same |
CN100517655C (zh) * | 2006-12-08 | 2009-07-22 | 中芯国际集成电路制造(上海)有限公司 | Sonos快闪存储器及其制作方法 |
US7778088B2 (en) * | 2006-12-19 | 2010-08-17 | Spansion Llc | Erasing flash memory using adaptive drain and/or gate bias |
US8320191B2 (en) | 2007-08-30 | 2012-11-27 | Infineon Technologies Ag | Memory cell arrangement, method for controlling a memory cell, memory array and electronic device |
US8355278B2 (en) | 2007-10-05 | 2013-01-15 | Micron Technology, Inc. | Reducing effects of program disturb in a memory device |
US7619933B2 (en) * | 2007-10-05 | 2009-11-17 | Micron Technology, Inc. | Reducing effects of program disturb in a memory device |
JP5164520B2 (ja) | 2007-10-19 | 2013-03-21 | ルネサスエレクトロニクス株式会社 | 不揮発性半導体メモリ及びデータプログラム/消去方法 |
JP2010073246A (ja) * | 2008-09-17 | 2010-04-02 | Toshiba Corp | 不揮発性半導体記憶装置 |
JP5404149B2 (ja) | 2009-04-16 | 2014-01-29 | ルネサスエレクトロニクス株式会社 | 半導体記憶装置 |
CN102063933A (zh) * | 2009-11-17 | 2011-05-18 | 智微科技股份有限公司 | 信号产生电路及相关储存装置 |
KR101591531B1 (ko) * | 2009-12-31 | 2016-02-03 | 주식회사 동부하이텍 | 반도체 메모리 소자, 반도체 메모리 소자의 제조 방법 및 반도체 메모리 소자의 셀어레이 |
JP5383517B2 (ja) * | 2010-01-07 | 2014-01-08 | シチズンホールディングス株式会社 | 不揮発性記憶装置 |
US8711630B2 (en) | 2010-12-29 | 2014-04-29 | Hynix Semiconductor Inc. | Programming method of non-volatile memory device |
KR101849176B1 (ko) | 2012-01-06 | 2018-04-17 | 삼성전자주식회사 | 2-트랜지스터 플래시 메모리 및 2-트랜지스터 플래시 메모리의 프로그램 방법 |
US8811093B2 (en) * | 2012-03-13 | 2014-08-19 | Silicon Storage Technology, Inc. | Non-volatile memory device and a method of operating same |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2891552B2 (ja) * | 1991-01-31 | 1999-05-17 | 三菱電機株式会社 | 不揮発性半導体記憶装置 |
US5408115A (en) * | 1994-04-04 | 1995-04-18 | Motorola Inc. | Self-aligned, split-gate EEPROM device |
JP3558510B2 (ja) * | 1997-10-30 | 2004-08-25 | シャープ株式会社 | 不揮発性半導体記憶装置 |
JP3159152B2 (ja) * | 1997-12-26 | 2001-04-23 | 日本電気株式会社 | 不揮発性半導体記憶装置及び不揮発性半導体記憶装置のデータ消去方法 |
JP3549723B2 (ja) * | 1998-03-27 | 2004-08-04 | 富士通株式会社 | 半導体記憶装置 |
JP2000031438A (ja) * | 1998-07-14 | 2000-01-28 | Toshiba Microelectronics Corp | 半導体記憶装置 |
US6133098A (en) * | 1999-05-17 | 2000-10-17 | Halo Lsi Design & Device Technology, Inc. | Process for making and programming and operating a dual-bit multi-level ballistic flash memory |
US6388293B1 (en) | 1999-10-12 | 2002-05-14 | Halo Lsi Design & Device Technology, Inc. | Nonvolatile memory cell, operating method of the same and nonvolatile memory array |
US6255166B1 (en) | 1999-08-05 | 2001-07-03 | Aalo Lsi Design & Device Technology, Inc. | Nonvolatile memory cell, method of programming the same and nonvolatile memory array |
US6248633B1 (en) * | 1999-10-25 | 2001-06-19 | Halo Lsi Design & Device Technology, Inc. | Process for making and programming and operating a dual-bit multi-level ballistic MONOS memory |
JP4923318B2 (ja) * | 1999-12-17 | 2012-04-25 | ソニー株式会社 | 不揮発性半導体記憶装置およびその動作方法 |
JP2002170891A (ja) * | 2000-11-21 | 2002-06-14 | Halo Lsi Design & Device Technol Inc | デュアルビット多準位バリスティックmonosメモリの製造、プログラミング、および動作のプロセス |
-
2001
- 2001-12-04 EP EP01480123A patent/EP1215681B1/de not_active Expired - Lifetime
- 2001-12-04 AT AT01480123T patent/ATE392698T1/de not_active IP Right Cessation
- 2001-12-04 DE DE60133619T patent/DE60133619T2/de not_active Expired - Lifetime
- 2001-12-05 US US10/005,932 patent/US6477088B2/en not_active Expired - Lifetime
- 2001-12-05 TW TW090130062A patent/TW540055B/zh not_active IP Right Cessation
- 2001-12-05 JP JP2001371370A patent/JP4422936B2/ja not_active Expired - Lifetime
- 2001-12-05 KR KR1020010076624A patent/KR20020071706A/ko not_active Application Discontinuation
- 2001-12-05 CN CNB011402148A patent/CN100492526C/zh not_active Expired - Fee Related
-
2009
- 2009-01-16 JP JP2009007623A patent/JP2009123330A/ja active Pending
- 2009-10-19 JP JP2009240354A patent/JP2010021572A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
EP1215681A3 (de) | 2004-01-14 |
ATE392698T1 (de) | 2008-05-15 |
JP2009123330A (ja) | 2009-06-04 |
JP2002289711A (ja) | 2002-10-04 |
US6477088B2 (en) | 2002-11-05 |
CN1367490A (zh) | 2002-09-04 |
DE60133619T2 (de) | 2009-06-10 |
JP2010021572A (ja) | 2010-01-28 |
JP4422936B2 (ja) | 2010-03-03 |
EP1215681A2 (de) | 2002-06-19 |
KR20020071706A (ko) | 2002-09-13 |
TW540055B (en) | 2003-07-01 |
EP1215681B1 (de) | 2008-04-16 |
CN100492526C (zh) | 2009-05-27 |
US20020067641A1 (en) | 2002-06-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |