DE60136692D1 - En, oberen rf elektrode - Google Patents

En, oberen rf elektrode

Info

Publication number
DE60136692D1
DE60136692D1 DE60136692T DE60136692T DE60136692D1 DE 60136692 D1 DE60136692 D1 DE 60136692D1 DE 60136692 T DE60136692 T DE 60136692T DE 60136692 T DE60136692 T DE 60136692T DE 60136692 D1 DE60136692 D1 DE 60136692D1
Authority
DE
Germany
Prior art keywords
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60136692T
Other languages
English (en)
Inventor
Daniel J Hoffman
Gerald Zheyao Yin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of DE60136692D1 publication Critical patent/DE60136692D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
DE60136692T 2000-03-17 2001-03-19 En, oberen rf elektrode Expired - Lifetime DE60136692D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/527,342 US6528751B1 (en) 2000-03-17 2000-03-17 Plasma reactor with overhead RF electrode tuned to the plasma
PCT/US2001/008882 WO2001071765A2 (en) 2000-03-17 2001-03-19 Plasma reactor with overhead rf electrode tuned to the plasma

Publications (1)

Publication Number Publication Date
DE60136692D1 true DE60136692D1 (de) 2009-01-08

Family

ID=24101080

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60136692T Expired - Lifetime DE60136692D1 (de) 2000-03-17 2001-03-19 En, oberen rf elektrode

Country Status (6)

Country Link
US (2) US6528751B1 (de)
EP (1) EP1269511B1 (de)
JP (1) JP2003528457A (de)
KR (1) KR100797926B1 (de)
DE (1) DE60136692D1 (de)
WO (1) WO2001071765A2 (de)

Families Citing this family (180)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8617351B2 (en) * 2002-07-09 2013-12-31 Applied Materials, Inc. Plasma reactor with minimal D.C. coils for cusp, solenoid and mirror fields for plasma uniformity and device damage reduction
US7030335B2 (en) * 2000-03-17 2006-04-18 Applied Materials, Inc. Plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression
US8048806B2 (en) * 2000-03-17 2011-11-01 Applied Materials, Inc. Methods to avoid unstable plasma states during a process transition
US6853141B2 (en) 2002-05-22 2005-02-08 Daniel J. Hoffman Capacitively coupled plasma reactor with magnetic plasma control
US6528751B1 (en) 2000-03-17 2003-03-04 Applied Materials, Inc. Plasma reactor with overhead RF electrode tuned to the plasma
US6894245B2 (en) * 2000-03-17 2005-05-17 Applied Materials, Inc. Merie plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression
US7141757B2 (en) * 2000-03-17 2006-11-28 Applied Materials, Inc. Plasma reactor with overhead RF source power electrode having a resonance that is virtually pressure independent
US6900596B2 (en) * 2002-07-09 2005-05-31 Applied Materials, Inc. Capacitively coupled plasma reactor with uniform radial distribution of plasma
US7374636B2 (en) * 2001-07-06 2008-05-20 Applied Materials, Inc. Method and apparatus for providing uniform plasma in a magnetic field enhanced plasma reactor
JP4009087B2 (ja) * 2001-07-06 2007-11-14 アプライド マテリアルズ インコーポレイテッド 半導体製造装置における磁気発生装置、半導体製造装置および磁場強度制御方法
US6879870B2 (en) * 2002-04-16 2005-04-12 Steven C. Shannon Method and apparatus for routing harmonics in a plasma to ground within a plasma enhanced semiconductor wafer processing chamber
US6960263B2 (en) * 2002-04-25 2005-11-01 Applied Materials, Inc. Shadow frame with cross beam for semiconductor equipment
US20040040664A1 (en) * 2002-06-03 2004-03-04 Yang Jang Gyoo Cathode pedestal for a plasma etch reactor
US20050139321A1 (en) * 2002-07-03 2005-06-30 Tokyo Electron Limited Plasma processing apparatus
TWI283899B (en) * 2002-07-09 2007-07-11 Applied Materials Inc Capacitively coupled plasma reactor with magnetic plasma control
US6896765B2 (en) * 2002-09-18 2005-05-24 Lam Research Corporation Method and apparatus for the compensation of edge ring wear in a plasma processing chamber
US7458335B1 (en) 2002-10-10 2008-12-02 Applied Materials, Inc. Uniform magnetically enhanced reactive ion etching using nested electromagnetic coils
JP4584565B2 (ja) * 2002-11-26 2010-11-24 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP4388287B2 (ja) * 2003-02-12 2009-12-24 東京エレクトロン株式会社 プラズマ処理装置及び高周波電力供給装置
US7422654B2 (en) * 2003-02-14 2008-09-09 Applied Materials, Inc. Method and apparatus for shaping a magnetic field in a magnetic field-enhanced plasma reactor
US7470626B2 (en) * 2003-05-16 2008-12-30 Applied Materials, Inc. Method of characterizing a chamber based upon concurrent behavior of selected plasma parameters as a function of source power, bias power and chamber pressure
US7452824B2 (en) * 2003-05-16 2008-11-18 Applied Materials, Inc. Method of characterizing a chamber based upon concurrent behavior of selected plasma parameters as a function of plural chamber parameters
US7901952B2 (en) * 2003-05-16 2011-03-08 Applied Materials, Inc. Plasma reactor control by translating desired values of M plasma parameters to values of N chamber parameters
US7795153B2 (en) * 2003-05-16 2010-09-14 Applied Materials, Inc. Method of controlling a chamber based upon predetermined concurrent behavior of selected plasma parameters as a function of selected chamber parameters
US7247218B2 (en) * 2003-05-16 2007-07-24 Applied Materials, Inc. Plasma density, energy and etch rate measurements at bias power input and real time feedback control of plasma source and bias power
US7910013B2 (en) 2003-05-16 2011-03-22 Applied Materials, Inc. Method of controlling a chamber based upon predetermined concurrent behavior of selected plasma parameters as a function of source power, bias power and chamber pressure
US7075771B2 (en) * 2003-05-21 2006-07-11 Tokyo Electron Limited Apparatus and methods for compensating plasma sheath non-uniformities at the substrate in a plasma processing system
US20050106873A1 (en) * 2003-08-15 2005-05-19 Hoffman Daniel J. Plasma chamber having multiple RF source frequencies
US7405521B2 (en) * 2003-08-22 2008-07-29 Lam Research Corporation Multiple frequency plasma processor method and apparatus
US7158221B2 (en) * 2003-12-23 2007-01-02 Applied Materials, Inc. Method and apparatus for performing limited area spectral analysis
US20050241762A1 (en) * 2004-04-30 2005-11-03 Applied Materials, Inc. Alternating asymmetrical plasma generation in a process chamber
US7501161B2 (en) * 2004-06-01 2009-03-10 Applied Materials, Inc. Methods and apparatus for reducing arcing during plasma processing
DE602005022874D1 (de) * 2004-06-03 2010-09-23 Molecular Imprints Inc Fluidausgabe und tropfenausgabe nach bedarf für die herstellung im nanobereich
US20060027329A1 (en) * 2004-08-09 2006-02-09 Sinha Ashok K Multi-frequency plasma enhanced process chamber having a torroidal plasma source
US20060172542A1 (en) * 2005-01-28 2006-08-03 Applied Materials, Inc. Method and apparatus to confine plasma and to enhance flow conductance
US7359177B2 (en) * 2005-05-10 2008-04-15 Applied Materials, Inc. Dual bias frequency plasma reactor with feedback control of E.S.C. voltage using wafer voltage measurement at the bias supply output
US20070029283A1 (en) * 2005-08-02 2007-02-08 Micron Technology, Inc. Etching processes and methods of forming semiconductor constructions
US7432210B2 (en) * 2005-10-05 2008-10-07 Applied Materials, Inc. Process to open carbon based hardmask
US7244313B1 (en) 2006-03-24 2007-07-17 Applied Materials, Inc. Plasma etch and photoresist strip process with intervening chamber de-fluorination and wafer de-fluorination steps
US7510976B2 (en) * 2006-04-21 2009-03-31 Applied Materials, Inc. Dielectric plasma etch process with in-situ amorphous carbon mask with improved critical dimension and etch selectivity
US7854820B2 (en) * 2006-10-16 2010-12-21 Lam Research Corporation Upper electrode backing member with particle reducing features
US7758763B2 (en) 2006-10-31 2010-07-20 Applied Materials, Inc. Plasma for resist removal and facet control of underlying features
US20080110567A1 (en) * 2006-11-15 2008-05-15 Miller Matthew L Plasma confinement baffle and flow equalizer for enhanced magnetic control of plasma radial distribution
US7780866B2 (en) * 2006-11-15 2010-08-24 Applied Materials, Inc. Method of plasma confinement for enhancing magnetic control of plasma radial distribution
US8083963B2 (en) 2007-02-08 2011-12-27 Applied Materials, Inc. Removal of process residues on the backside of a substrate
US8053699B2 (en) * 2007-11-27 2011-11-08 General Electric Company Electrical pulse circuit
KR101004927B1 (ko) * 2008-04-24 2010-12-29 삼성엘이디 주식회사 Ｃｖｄ용 샤워 헤드 및 이를 구비하는 화학 기상 증착 장치
US8382939B2 (en) * 2009-07-13 2013-02-26 Applied Materials, Inc. Plasma processing chamber with enhanced gas delivery
US8501631B2 (en) 2009-11-19 2013-08-06 Lam Research Corporation Plasma processing system control based on RF voltage
US8920597B2 (en) 2010-08-20 2014-12-30 Applied Materials, Inc. Symmetric VHF source for a plasma reactor
US10283321B2 (en) 2011-01-18 2019-05-07 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
US9064815B2 (en) 2011-03-14 2015-06-23 Applied Materials, Inc. Methods for etch of metal and metal-oxide films
US8999856B2 (en) 2011-03-14 2015-04-07 Applied Materials, Inc. Methods for etch of sin films
TW202230814A (zh) 2011-05-05 2022-08-01 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
US8933335B2 (en) * 2011-10-14 2015-01-13 Varian Semiconductor Equipment Associates, Inc. Current lead with a configuration to reduce heat load transfer in an alternating electrical current environment
US9083182B2 (en) 2011-11-21 2015-07-14 Lam Research Corporation Bypass capacitors for high voltage bias power in the mid frequency RF range
US9396908B2 (en) 2011-11-22 2016-07-19 Lam Research Corporation Systems and methods for controlling a plasma edge region
US9263240B2 (en) 2011-11-22 2016-02-16 Lam Research Corporation Dual zone temperature control of upper electrodes
US10586686B2 (en) 2011-11-22 2020-03-10 Law Research Corporation Peripheral RF feed and symmetric RF return for symmetric RF delivery
CN104024477B (zh) * 2011-11-23 2016-05-18 朗姆研究公司 多区域气体注入上电极系统
CN104011838B (zh) 2011-11-24 2016-10-05 朗姆研究公司 具有柔性对称的rf返回带的等离子体处理室
US9114666B2 (en) 2012-02-22 2015-08-25 Lam Research Corporation Methods and apparatus for controlling plasma in a plasma processing system
US10325759B2 (en) 2012-02-22 2019-06-18 Lam Research Corporation Multiple control modes
US9502216B2 (en) 2013-01-31 2016-11-22 Lam Research Corporation Using modeling to determine wafer bias associated with a plasma system
US9368329B2 (en) 2012-02-22 2016-06-14 Lam Research Corporation Methods and apparatus for synchronizing RF pulses in a plasma processing system
US9462672B2 (en) 2012-02-22 2016-10-04 Lam Research Corporation Adjustment of power and frequency based on three or more states
US9320126B2 (en) 2012-12-17 2016-04-19 Lam Research Corporation Determining a value of a variable on an RF transmission model
US9171699B2 (en) 2012-02-22 2015-10-27 Lam Research Corporation Impedance-based adjustment of power and frequency
US9295148B2 (en) 2012-12-14 2016-03-22 Lam Research Corporation Computation of statistics for statistical data decimation
US9390893B2 (en) 2012-02-22 2016-07-12 Lam Research Corporation Sub-pulsing during a state
US9842725B2 (en) 2013-01-31 2017-12-12 Lam Research Corporation Using modeling to determine ion energy associated with a plasma system
US9197196B2 (en) 2012-02-22 2015-11-24 Lam Research Corporation State-based adjustment of power and frequency
US9530620B2 (en) 2013-03-15 2016-12-27 Lam Research Corporation Dual control modes
US9267739B2 (en) 2012-07-18 2016-02-23 Applied Materials, Inc. Pedestal with multi-zone temperature control and multiple purge capabilities
US9373517B2 (en) 2012-08-02 2016-06-21 Applied Materials, Inc. Semiconductor processing with DC assisted RF power for improved control
US9408288B2 (en) 2012-09-14 2016-08-02 Lam Research Corporation Edge ramping
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
US9043525B2 (en) 2012-12-14 2015-05-26 Lam Research Corporation Optimizing a rate of transfer of data between an RF generator and a host system within a plasma tool
US9620337B2 (en) 2013-01-31 2017-04-11 Lam Research Corporation Determining a malfunctioning device in a plasma system
US9779196B2 (en) 2013-01-31 2017-10-03 Lam Research Corporation Segmenting a model within a plasma system
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
US9362130B2 (en) 2013-03-01 2016-06-07 Applied Materials, Inc. Enhanced etching processes using remote plasma sources
US9040422B2 (en) 2013-03-05 2015-05-26 Applied Materials, Inc. Selective titanium nitride removal
US9107284B2 (en) 2013-03-13 2015-08-11 Lam Research Corporation Chamber matching using voltage control mode
US9119283B2 (en) 2013-03-14 2015-08-25 Lam Research Corporation Chamber matching for power control mode
US20140271097A1 (en) 2013-03-15 2014-09-18 Applied Materials, Inc. Processing systems and methods for halide scavenging
US9720022B2 (en) 2015-05-19 2017-08-01 Lam Research Corporation Systems and methods for providing characteristics of an impedance matching model for use with matching networks
US9502221B2 (en) 2013-07-26 2016-11-22 Lam Research Corporation Etch rate modeling and use thereof with multiple parameters for in-chamber and chamber-to-chamber matching
US9773648B2 (en) 2013-08-30 2017-09-26 Applied Materials, Inc. Dual discharge modes operation for remote plasma
TWI668725B (zh) * 2013-10-01 2019-08-11 美商蘭姆研究公司 使用模型化、回授及阻抗匹配之蝕刻速率的控制
US9576809B2 (en) 2013-11-04 2017-02-21 Applied Materials, Inc. Etch suppression with germanium
US9520303B2 (en) 2013-11-12 2016-12-13 Applied Materials, Inc. Aluminum selective etch
US9594105B2 (en) 2014-01-10 2017-03-14 Lam Research Corporation Cable power loss determination for virtual metrology
US9499898B2 (en) 2014-03-03 2016-11-22 Applied Materials, Inc. Layered thin film heater and method of fabrication
US9299537B2 (en) 2014-03-20 2016-03-29 Applied Materials, Inc. Radial waveguide systems and methods for post-match control of microwaves
US9903020B2 (en) 2014-03-31 2018-02-27 Applied Materials, Inc. Generation of compact alumina passivation layers on aluminum plasma equipment components
US9309598B2 (en) 2014-05-28 2016-04-12 Applied Materials, Inc. Oxide and metal removal
US9496167B2 (en) 2014-07-31 2016-11-15 Applied Materials, Inc. Integrated bit-line airgap formation and gate stack post clean
US9659753B2 (en) * 2014-08-07 2017-05-23 Applied Materials, Inc. Grooved insulator to reduce leakage current
US9613822B2 (en) 2014-09-25 2017-04-04 Applied Materials, Inc. Oxide etch selectivity enhancement
US9355922B2 (en) 2014-10-14 2016-05-31 Applied Materials, Inc. Systems and methods for internal surface conditioning in plasma processing equipment
US9966240B2 (en) 2014-10-14 2018-05-08 Applied Materials, Inc. Systems and methods for internal surface conditioning assessment in plasma processing equipment
US11637002B2 (en) 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
US10224210B2 (en) 2014-12-09 2019-03-05 Applied Materials, Inc. Plasma processing system with direct outlet toroidal plasma source
US10573496B2 (en) 2014-12-09 2020-02-25 Applied Materials, Inc. Direct outlet toroidal plasma source
US9536749B2 (en) 2014-12-15 2017-01-03 Lam Research Corporation Ion energy control by RF pulse shape
US11257693B2 (en) 2015-01-09 2022-02-22 Applied Materials, Inc. Methods and systems to improve pedestal temperature control
US9728437B2 (en) 2015-02-03 2017-08-08 Applied Materials, Inc. High temperature chuck for plasma processing systems
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US9881805B2 (en) 2015-03-02 2018-01-30 Applied Materials, Inc. Silicon selective removal
US9691645B2 (en) 2015-08-06 2017-06-27 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US9349605B1 (en) 2015-08-07 2016-05-24 Applied Materials, Inc. Oxide etch selectivity systems and methods
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US10522371B2 (en) 2016-05-19 2019-12-31 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US9865484B1 (en) 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
US10629473B2 (en) 2016-09-09 2020-04-21 Applied Materials, Inc. Footing removal for nitride spacer
US10062575B2 (en) 2016-09-09 2018-08-28 Applied Materials, Inc. Poly directional etch by oxidation
US10062585B2 (en) 2016-10-04 2018-08-28 Applied Materials, Inc. Oxygen compatible plasma source
US9934942B1 (en) 2016-10-04 2018-04-03 Applied Materials, Inc. Chamber with flow-through source
US10546729B2 (en) 2016-10-04 2020-01-28 Applied Materials, Inc. Dual-channel showerhead with improved profile
US9721789B1 (en) 2016-10-04 2017-08-01 Applied Materials, Inc. Saving ion-damaged spacers
US10062579B2 (en) 2016-10-07 2018-08-28 Applied Materials, Inc. Selective SiN lateral recess
US9947549B1 (en) 2016-10-10 2018-04-17 Applied Materials, Inc. Cobalt-containing material removal
US9768034B1 (en) 2016-11-11 2017-09-19 Applied Materials, Inc. Removal methods for high aspect ratio structures
US10163696B2 (en) 2016-11-11 2018-12-25 Applied Materials, Inc. Selective cobalt removal for bottom up gapfill
US10026621B2 (en) 2016-11-14 2018-07-17 Applied Materials, Inc. SiN spacer profile patterning
US10242908B2 (en) 2016-11-14 2019-03-26 Applied Materials, Inc. Airgap formation with damage-free copper
US10566206B2 (en) 2016-12-27 2020-02-18 Applied Materials, Inc. Systems and methods for anisotropic material breakthrough
US10431429B2 (en) 2017-02-03 2019-10-01 Applied Materials, Inc. Systems and methods for radial and azimuthal control of plasma uniformity
US10403507B2 (en) 2017-02-03 2019-09-03 Applied Materials, Inc. Shaped etch profile with oxidation
US10043684B1 (en) 2017-02-06 2018-08-07 Applied Materials, Inc. Self-limiting atomic thermal etching systems and methods
US10319739B2 (en) 2017-02-08 2019-06-11 Applied Materials, Inc. Accommodating imperfectly aligned memory holes
US10943834B2 (en) 2017-03-13 2021-03-09 Applied Materials, Inc. Replacement contact process
US10319649B2 (en) 2017-04-11 2019-06-11 Applied Materials, Inc. Optical emission spectroscopy (OES) for remote plasma monitoring
US11276559B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
US11276590B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
US10049891B1 (en) 2017-05-31 2018-08-14 Applied Materials, Inc. Selective in situ cobalt residue removal
US10497579B2 (en) 2017-05-31 2019-12-03 Applied Materials, Inc. Water-free etching methods
US10920320B2 (en) 2017-06-16 2021-02-16 Applied Materials, Inc. Plasma health determination in semiconductor substrate processing reactors
US10541246B2 (en) 2017-06-26 2020-01-21 Applied Materials, Inc. 3D flash memory cells which discourage cross-cell electrical tunneling
US10727080B2 (en) 2017-07-07 2020-07-28 Applied Materials, Inc. Tantalum-containing material removal
US10541184B2 (en) 2017-07-11 2020-01-21 Applied Materials, Inc. Optical emission spectroscopic techniques for monitoring etching
US10354889B2 (en) 2017-07-17 2019-07-16 Applied Materials, Inc. Non-halogen etching of silicon-containing materials
US10043674B1 (en) 2017-08-04 2018-08-07 Applied Materials, Inc. Germanium etching systems and methods
US10170336B1 (en) 2017-08-04 2019-01-01 Applied Materials, Inc. Methods for anisotropic control of selective silicon removal
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
US10283324B1 (en) 2017-10-24 2019-05-07 Applied Materials, Inc. Oxygen treatment for nitride etching
US10128086B1 (en) 2017-10-24 2018-11-13 Applied Materials, Inc. Silicon pretreatment for nitride removal
US10256112B1 (en) 2017-12-08 2019-04-09 Applied Materials, Inc. Selective tungsten removal
US10903054B2 (en) 2017-12-19 2021-01-26 Applied Materials, Inc. Multi-zone gas distribution systems and methods
US11328909B2 (en) 2017-12-22 2022-05-10 Applied Materials, Inc. Chamber conditioning and removal processes
US10854426B2 (en) 2018-01-08 2020-12-01 Applied Materials, Inc. Metal recess for semiconductor structures
US10679870B2 (en) 2018-02-15 2020-06-09 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus
US10964512B2 (en) 2018-02-15 2021-03-30 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus and methods
JP2019145397A (ja) 2018-02-22 2019-08-29 東芝メモリ株式会社 半導体製造装置および半導体装置の製造方法
TWI716818B (zh) 2018-02-28 2021-01-21 美商應用材料股份有限公司 形成氣隙的系統及方法
US10593560B2 (en) 2018-03-01 2020-03-17 Applied Materials, Inc. Magnetic induction plasma source for semiconductor processes and equipment
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch
US10497573B2 (en) 2018-03-13 2019-12-03 Applied Materials, Inc. Selective atomic layer etching of semiconductor materials
US10573527B2 (en) 2018-04-06 2020-02-25 Applied Materials, Inc. Gas-phase selective etching systems and methods
US10490406B2 (en) 2018-04-10 2019-11-26 Appled Materials, Inc. Systems and methods for material breakthrough
US10699879B2 (en) 2018-04-17 2020-06-30 Applied Materials, Inc. Two piece electrode assembly with gap for plasma control
US10886137B2 (en) 2018-04-30 2021-01-05 Applied Materials, Inc. Selective nitride removal
US10755941B2 (en) 2018-07-06 2020-08-25 Applied Materials, Inc. Self-limiting selective etching systems and methods
US10872778B2 (en) 2018-07-06 2020-12-22 Applied Materials, Inc. Systems and methods utilizing solid-phase etchants
US10672642B2 (en) 2018-07-24 2020-06-02 Applied Materials, Inc. Systems and methods for pedestal configuration
US11049755B2 (en) 2018-09-14 2021-06-29 Applied Materials, Inc. Semiconductor substrate supports with embedded RF shield
US10892198B2 (en) 2018-09-14 2021-01-12 Applied Materials, Inc. Systems and methods for improved performance in semiconductor processing
US11062887B2 (en) 2018-09-17 2021-07-13 Applied Materials, Inc. High temperature RF heater pedestals
CN108990250B (zh) * 2018-09-20 2024-03-12 烟台海灵健康科技有限公司 一种可调节浓度的电弧等离子体气体发生器
US11417534B2 (en) 2018-09-21 2022-08-16 Applied Materials, Inc. Selective material removal
US11682560B2 (en) 2018-10-11 2023-06-20 Applied Materials, Inc. Systems and methods for hafnium-containing film removal
US11121002B2 (en) 2018-10-24 2021-09-14 Applied Materials, Inc. Systems and methods for etching metals and metal derivatives
US11437242B2 (en) 2018-11-27 2022-09-06 Applied Materials, Inc. Selective removal of silicon-containing materials
US11721527B2 (en) 2019-01-07 2023-08-08 Applied Materials, Inc. Processing chamber mixing systems
US10920319B2 (en) 2019-01-11 2021-02-16 Applied Materials, Inc. Ceramic showerheads with conductive electrodes
CN114446748A (zh) * 2020-10-30 2022-05-06 中微半导体设备(上海)股份有限公司 一种等离子体处理装置及其工作方法
CN116145248B (zh) * 2023-04-24 2023-07-25 苏州长光华芯光电技术股份有限公司 一种半导体外延方法

Family Cites Families (78)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4464223A (en) 1983-10-03 1984-08-07 Tegal Corp. Plasma reactor apparatus and method
US4579618A (en) 1984-01-06 1986-04-01 Tegal Corporation Plasma reactor apparatus
US4859908A (en) 1986-09-24 1989-08-22 Matsushita Electric Industrial Co., Ltd. Plasma processing apparatus for large area ion irradiation
US5006760A (en) 1987-01-09 1991-04-09 Motorola, Inc. Capacitive feed for plasma reactor
DE3708716C2 (de) 1987-03-18 1993-11-04 Hans Prof Dr Rer Nat Oechsner Hochfrequenz-ionenquelle
US4973883A (en) 1987-05-01 1990-11-27 Semiconductor Energy Laborator Co., Ltd. Plasma processing apparatus with a lisitano coil
US5115167A (en) 1988-04-05 1992-05-19 Mitsubishi Denki Kabushiki Kaisha Plasma processor
US5055853A (en) 1988-10-03 1991-10-08 Garnier Robert C Magnetic frill generator
US5089083A (en) 1989-04-25 1992-02-18 Tokyo Electron Limited Plasma etching method
JPH02298024A (ja) 1989-05-12 1990-12-10 Tadahiro Omi リアクティブイオンエッチング装置
US4990229A (en) 1989-06-13 1991-02-05 Plasma & Materials Technologies, Inc. High density plasma deposition and etching apparatus
US5122251A (en) 1989-06-13 1992-06-16 Plasma & Materials Technologies, Inc. High density plasma deposition and etching apparatus
DE3923661A1 (de) 1989-07-18 1991-01-24 Leybold Ag Schaltungsanordnung fuer die anpassung der impedanz einer plasmastrecke an einen hochfrequenzgenerator
US5300460A (en) 1989-10-03 1994-04-05 Applied Materials, Inc. UHF/VHF plasma for use in forming integrated circuit structures on semiconductor wafers
US5312778A (en) 1989-10-03 1994-05-17 Applied Materials, Inc. Method for plasma processing using magnetically enhanced plasma chemical vapor deposition
US5032202A (en) 1989-10-03 1991-07-16 Martin Marietta Energy Systems, Inc. Plasma generating apparatus for large area plasma processing
US5223457A (en) 1989-10-03 1993-06-29 Applied Materials, Inc. High-frequency semiconductor wafer processing method using a negative self-bias
US5210466A (en) 1989-10-03 1993-05-11 Applied Materials, Inc. VHF/UHF reactor system
JPH04901A (ja) 1990-04-18 1992-01-06 Mitsubishi Electric Corp プラズマ装置の高周波給電方法及び装置
US5707486A (en) 1990-07-31 1998-01-13 Applied Materials, Inc. Plasma reactor using UHF/VHF and RF triode source, and process
US5274306A (en) 1990-08-31 1993-12-28 Kaufman & Robinson, Inc. Capacitively coupled radiofrequency plasma source
US5376211A (en) 1990-09-29 1994-12-27 Tokyo Electron Limited Magnetron plasma processing apparatus and processing method
JP2501948B2 (ja) 1990-10-26 1996-05-29 三菱電機株式会社 プラズマ処理方法及びプラズマ処理装置
US5246532A (en) 1990-10-26 1993-09-21 Mitsubishi Denki Kabushiki Kaisha Plasma processing apparatus
US5195045A (en) * 1991-02-27 1993-03-16 Astec America, Inc. Automatic impedance matching apparatus and method
DE69204670T2 (de) 1991-05-21 1996-04-18 Materials Research Corp Sanftaetz-einheit fuer modulare bearbeitungsanlagen und ecr-plasmaerzeuger fuer eine solche einheit.
US5198725A (en) 1991-07-12 1993-03-30 Lam Research Corporation Method of producing flat ecr layer in microwave plasma device and apparatus therefor
US5849136A (en) 1991-10-11 1998-12-15 Applied Materials, Inc. High frequency semiconductor wafer processing apparatus and method
US5279669A (en) 1991-12-13 1994-01-18 International Business Machines Corporation Plasma reactor for processing substrates comprising means for inducing electron cyclotron resonance (ECR) and ion cyclotron resonance (ICR) conditions
JP2972477B2 (ja) 1993-01-27 1999-11-08 日本電気株式会社 Ｒｆ・ｅｃｒプラズマエッチング装置
TW249313B (de) 1993-03-06 1995-06-11 Tokyo Electron Co
US5537004A (en) 1993-03-06 1996-07-16 Tokyo Electron Limited Low frequency electron cyclotron resonance plasma processor
JP3236111B2 (ja) * 1993-03-31 2001-12-10 キヤノン株式会社 プラズマ処理装置及び処理方法
US5662770A (en) 1993-04-16 1997-09-02 Micron Technology, Inc. Method and apparatus for improving etch uniformity in remote source plasma reactors with powered wafer chucks
JP3222620B2 (ja) * 1993-05-28 2001-10-29 株式会社東芝 放電処理装置
EP0634778A1 (de) 1993-07-12 1995-01-18 The Boc Group, Inc. Hohlkathoden-Netzwerk
WO1995008182A1 (en) 1993-09-17 1995-03-23 Isis Innovation Limited Rf plasma reactor
US5849372A (en) 1993-09-17 1998-12-15 Isis Innovation Limited RF plasma reactor and methods of generating RF plasma
US5463525A (en) 1993-12-20 1995-10-31 International Business Machines Corporation Guard ring electrostatic chuck
JP3279038B2 (ja) 1994-01-31 2002-04-30 ソニー株式会社 プラズマ装置およびこれを用いたプラズマ処理方法
JP3365067B2 (ja) 1994-02-10 2003-01-08 ソニー株式会社 プラズマ装置およびこれを用いたプラズマ処理方法
US5512130A (en) 1994-03-09 1996-04-30 Texas Instruments Incorporated Method and apparatus of etching a clean trench in a semiconductor material
US5900103A (en) 1994-04-20 1999-05-04 Tokyo Electron Limited Plasma treatment method and apparatus
US5685914A (en) 1994-04-05 1997-11-11 Applied Materials, Inc. Focus ring for semiconductor wafer processing in a plasma reactor
KR100306527B1 (ko) 1994-06-15 2002-06-26 구사마 사부로 박막반도체장치의제조방법,박막반도체장치
US5587038A (en) 1994-06-16 1996-12-24 Princeton University Apparatus and process for producing high density axially extending plasmas
AU2003195A (en) * 1994-06-21 1996-01-04 Boc Group, Inc., The Improved power distribution for multiple electrode plasma systems using quarter wavelength transmission lines
IT1269413B (it) 1994-10-21 1997-04-01 Proel Tecnologie Spa Sorgente di plasma a radiofrequenza
JP2956494B2 (ja) 1994-10-26 1999-10-04 住友金属工業株式会社 プラズマ処理装置
EP0715334B1 (de) * 1994-11-30 1999-04-14 Applied Materials, Inc. Plasmareaktoren zur Behandlung von Halbleiterscheiben
US5605637A (en) 1994-12-15 1997-02-25 Applied Materials Inc. Adjustable dc bias control in a plasma reactor
US5792376A (en) 1995-01-06 1998-08-11 Kabushiki Kaisha Toshiba Plasma processing apparatus and plasma processing method
JP3778299B2 (ja) 1995-02-07 2006-05-24 東京エレクトロン株式会社 プラズマエッチング方法
US5674321A (en) 1995-04-28 1997-10-07 Applied Materials, Inc. Method and apparatus for producing plasma uniformity in a magnetic field-enhanced plasma reactor
US5710486A (en) 1995-05-08 1998-01-20 Applied Materials, Inc. Inductively and multi-capacitively coupled plasma reactor
JP3169337B2 (ja) 1995-05-30 2001-05-21 キヤノン株式会社 光起電力素子及びその製造方法
US5997962A (en) 1995-06-30 1999-12-07 Tokyo Electron Limited Plasma process utilizing an electrostatic chuck
KR100226366B1 (ko) 1995-08-23 1999-10-15 아끼구사 나오유끼 플라즈마장치 및 플라즈마 처리방법
JPH09106898A (ja) 1995-10-09 1997-04-22 Anelva Corp プラズマｃｖｄ装置、プラズマ処理装置及びプラズマｃｖｄ方法
JP3238082B2 (ja) 1996-05-16 2001-12-10 シャープ株式会社 電子デバイス製造装置
US5863376A (en) 1996-06-05 1999-01-26 Lam Research Corporation Temperature controlling method and apparatus for a plasma processing chamber
JPH10134996A (ja) * 1996-10-31 1998-05-22 Nec Corp プラズマ処理装置
US6113731A (en) 1997-01-02 2000-09-05 Applied Materials, Inc. Magnetically-enhanced plasma chamber with non-uniform magnetic field
US6152071A (en) * 1996-12-11 2000-11-28 Canon Kabushiki Kaisha High-frequency introducing means, plasma treatment apparatus, and plasma treatment method
JP3650248B2 (ja) 1997-03-19 2005-05-18 東京エレクトロン株式会社 プラズマ処理装置
JP3582287B2 (ja) 1997-03-26 2004-10-27 株式会社日立製作所 エッチング装置
TW376547B (en) * 1997-03-27 1999-12-11 Matsushita Electric Ind Co Ltd Method and apparatus for plasma processing
US6155200A (en) 1997-07-08 2000-12-05 Tokyo Electron Limited ECR plasma generator and an ECR system using the generator
US6110395A (en) 1997-08-26 2000-08-29 Trikon Technologies, Inc. Method and structure for controlling plasma uniformity
JP2929284B2 (ja) * 1997-09-10 1999-08-03 株式会社アドテック 高周波プラズマ処理装置のためのインピーダンス整合及び電力制御システム
US6041734A (en) 1997-12-01 2000-03-28 Applied Materials, Inc. Use of an asymmetric waveform to control ion bombardment during substrate processing
US6251216B1 (en) 1997-12-17 2001-06-26 Matsushita Electronics Corporation Apparatus and method for plasma processing
JP3818561B2 (ja) 1998-10-29 2006-09-06 エルジー フィリップス エルシーディー カンパニー リミテッド シリコン酸化膜の成膜方法および薄膜トランジスタの製造方法
US6188564B1 (en) 1999-03-31 2001-02-13 Lam Research Corporation Method and apparatus for compensating non-uniform wafer processing in plasma processing chamber
JP3374796B2 (ja) 1999-08-06 2003-02-10 松下電器産業株式会社 プラズマ処理方法及び装置
US6262538B1 (en) 1999-08-26 2001-07-17 International Business Machines Corporation High density plasma tool with adjustable uniformity and stochastic electron heating for reduced gas cracking
US6451703B1 (en) 2000-03-10 2002-09-17 Applied Materials, Inc. Magnetically enhanced plasma etch process using a heavy fluorocarbon etching gas
US6528751B1 (en) 2000-03-17 2003-03-04 Applied Materials, Inc. Plasma reactor with overhead RF electrode tuned to the plasma

Also Published As

Publication number Publication date
US6528751B1 (en) 2003-03-04
WO2001071765A2 (en) 2001-09-27
EP1269511B1 (de) 2008-11-26
EP1269511A2 (de) 2003-01-02
US6838635B2 (en) 2005-01-04
US20030062344A1 (en) 2003-04-03
KR100797926B1 (ko) 2008-01-24
JP2003528457A (ja) 2003-09-24
WO2001071765A3 (en) 2002-01-31
KR20020081461A (ko) 2002-10-26

Similar Documents

Publication Publication Date Title
DE60136692D1 (de) En, oberen rf elektrode
DE60105980D1 (de) Elektrode
FI20001914A (fi) Elektrodirakenne
DE50106746D1 (de) Elektrodenanordnung
DE60022448D1 (de) Ablenkbarere, mit ionizierbarem Gas arbeitender Koagulator
IS6492A (is) Ný bíarýlkarboxamíð
DE60238121D1 (de) Ablationssystem
DE60143500D1 (de) Zinn-Elektrolyt
DE60044687D1 (de) Hochfrequenzschalter
DK1292733T3 (da) Kunstplæne
DE50011541D1 (de) Elektrodenanordnung
DE60141214D1 (de) Enzymelektrode
DE60119046D1 (de) Hf-schalter
ITMI20021038A1 (it) Disposizione di elettrodi
DE60011330D1 (de) Elektrode
NO20030631D0 (no) Rörenhet
NO20030054D0 (no) Elektrodestruktur for dielektrisk oppvarming
DE50104548D1 (de) Lösungsvermittler
DE60129123D1 (de) BIOLOGISCH AKTIVE 4H-BENZOi1,4öOXAZIN-3-ONE
AR028329A1 (es) Estratrienos sustituidos como estrngenos selectivamente activos
DE50203715D1 (de) Elektrodenleitung
DE50013696D1 (de) Trennschalter
DK1263683T3 (da) Elektrodekonstruktion
DE50004783D1 (de) Elektrodenanordnung
NO20042696L (no) Elektrodebindemiddel

Legal Events

Date Code Title Description
8364 No opposition during term of opposition