DE60138633D1 - Temperaturkorrektur für ladungspumpen, durch ladungsdegradierung - Google Patents

Temperaturkorrektur für ladungspumpen, durch ladungsdegradierung

Info

Publication number
DE60138633D1
DE60138633D1 DE60138633T DE60138633T DE60138633D1 DE 60138633 D1 DE60138633 D1 DE 60138633D1 DE 60138633 T DE60138633 T DE 60138633T DE 60138633 T DE60138633 T DE 60138633T DE 60138633 D1 DE60138633 D1 DE 60138633D1
Authority
DE
Germany
Prior art keywords
charge pump
output
pump circuit
circuit
vco
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60138633T
Other languages
English (en)
Inventor
Rupinder Bains
Binh Ngo
Daniel Elmhurst
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Numonyx BV Amsterdam Rolle Branch
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Application granted granted Critical
Publication of DE60138633D1 publication Critical patent/DE60138633D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
    • H02M3/073—Charge pumps of the Schenkel-type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S323/00—Electricity: power supply or regulation systems
    • Y10S323/907—Temperature compensation of semiconductor
DE60138633T 2000-09-27 2001-09-25 Temperaturkorrektur für ladungspumpen, durch ladungsdegradierung Expired - Lifetime DE60138633D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/670,850 US6356062B1 (en) 2000-09-27 2000-09-27 Degenerative load temperature correction for charge pumps
PCT/US2001/030156 WO2002027903A2 (en) 2000-09-27 2001-09-25 Degenerative load temperature correction for charge pumps

Publications (1)

Publication Number Publication Date
DE60138633D1 true DE60138633D1 (de) 2009-06-18

Family

ID=24692146

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60138633T Expired - Lifetime DE60138633D1 (de) 2000-09-27 2001-09-25 Temperaturkorrektur für ladungspumpen, durch ladungsdegradierung

Country Status (9)

Country Link
US (1) US6356062B1 (de)
EP (1) EP1323226B1 (de)
KR (1) KR100548910B1 (de)
CN (1) CN1230969C (de)
AT (1) ATE431008T1 (de)
AU (1) AU2001294760A1 (de)
DE (1) DE60138633D1 (de)
TW (1) TW538574B (de)
WO (1) WO2002027903A2 (de)

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US7178004B2 (en) 2003-01-31 2007-02-13 Yan Polansky Memory array programming circuit and a method for using the circuit
JP3688689B2 (ja) * 2003-04-22 2005-08-31 株式会社東芝 Ｄｃ−ｄｃコンバータ
US7719343B2 (en) 2003-09-08 2010-05-18 Peregrine Semiconductor Corporation Low noise charge pump method and apparatus
US7064529B2 (en) * 2003-09-17 2006-06-20 Atmel Corporation Dual stage voltage regulation circuit
US7638850B2 (en) 2004-10-14 2009-12-29 Saifun Semiconductors Ltd. Non-volatile memory structure and method of fabrication
US7205805B1 (en) 2004-11-02 2007-04-17 Western Digital Technologies, Inc. Adjusting power consumption of digital circuitry relative to critical path circuit having the largest propagation delay error
US7129763B1 (en) 2004-11-08 2006-10-31 Western Digital Technologies, Inc. Adjusting power consumption of digital circuitry by generating frequency error representing error in propagation delay
JP2008527956A (ja) * 2004-12-30 2008-07-24 エヌエックスピー ビー ヴィ チャージポンプの外部コンデンサに依存する温度の監視及びそれに基づく向上したチャージポンプ
US20060181340A1 (en) * 2005-02-17 2006-08-17 Zywyn Corporation Regulating charge pump
KR100752643B1 (ko) * 2005-03-14 2007-08-29 삼성전자주식회사 입력 전압에 적응적으로 제어되는 전압 승압 장치
US7786512B2 (en) 2005-07-18 2010-08-31 Saifun Semiconductors Ltd. Dense non-volatile memory array and method of fabrication
US7221138B2 (en) * 2005-09-27 2007-05-22 Saifun Semiconductors Ltd Method and apparatus for measuring charge pump output current
US7808818B2 (en) 2006-01-12 2010-10-05 Saifun Semiconductors Ltd. Secondary injection for NROM
US7760554B2 (en) 2006-02-21 2010-07-20 Saifun Semiconductors Ltd. NROM non-volatile memory and mode of operation
US7692961B2 (en) 2006-02-21 2010-04-06 Saifun Semiconductors Ltd. Method, circuit and device for disturb-control of programming nonvolatile memory cells by hot-hole injection (HHI) and by channel hot-electron (CHE) injection
US7486060B1 (en) 2006-03-30 2009-02-03 Western Digital Technologies, Inc. Switching voltage regulator comprising a cycle comparator for dynamic voltage scaling
US7701779B2 (en) 2006-04-27 2010-04-20 Sajfun Semiconductors Ltd. Method for programming a reference cell
US7551383B1 (en) 2006-06-28 2009-06-23 Western Digital Technologies, Inc. Adjusting voltage delivered to disk drive circuitry based on a selected zone
DE102006036546A1 (de) * 2006-08-04 2008-02-21 Qimonda Flash Gmbh & Co. Kg Kapazitätsladestrombegrenzungseinrichtung, Ladungspumpenanordnung, Verfahren zum Begrenzen eines Ladestromes an einer Ladungspumpe und Verfahren zum Begrenzen des Ladestromes an einen Kondensator
US7330019B1 (en) 2006-10-31 2008-02-12 Western Digital Technologies, Inc. Adjusting on-time for a discontinuous switching voltage regulator
US7733189B1 (en) 2007-09-14 2010-06-08 Western Digital Technologies, Inc. Oscillator comprising foldover detection
US7944277B1 (en) * 2008-01-04 2011-05-17 Marvell International Ltd. Circuit and methods of adaptive charge-pump regulation
US8085020B1 (en) 2008-06-13 2011-12-27 Western Digital Technologies, Inc. Switching voltage regulator employing dynamic voltage scaling with hysteretic comparator
JP5072731B2 (ja) * 2008-06-23 2012-11-14 株式会社東芝 定電圧昇圧電源
EP2311184A4 (de) 2008-07-18 2014-02-26 Peregrine Semiconductor Corp Geräuscharme hochleistungs-vorspannungserzeugungsschaltungen und verfahren
US9660590B2 (en) 2008-07-18 2017-05-23 Peregrine Semiconductor Corporation Low-noise high efficiency bias generation circuits and method
CN101771340B (zh) * 2008-12-31 2012-10-31 中芯国际集成电路制造(上海)有限公司 电荷泵
US8120412B2 (en) * 2009-08-07 2012-02-21 Freescale Semiconductor, Inc. Voltage boosting system with slew rate control and method thereof
US8937404B1 (en) 2010-08-23 2015-01-20 Western Digital Technologies, Inc. Data storage device comprising dual mode independent/parallel voltage regulators
US8339185B2 (en) 2010-12-20 2012-12-25 Sandisk 3D Llc Charge pump system that dynamically selects number of active stages
US8686787B2 (en) 2011-05-11 2014-04-01 Peregrine Semiconductor Corporation High voltage ring pump with inverter stages and voltage boosting stages
US9413362B2 (en) 2011-01-18 2016-08-09 Peregrine Semiconductor Corporation Differential charge pump
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CN103294094B (zh) * 2012-03-02 2016-01-20 联咏科技股份有限公司 充电帮浦装置及其驱动能力调整方法
US8836412B2 (en) 2013-02-11 2014-09-16 Sandisk 3D Llc Charge pump with a power-controlled clock buffer to reduce power consumption and output voltage ripple
US8867281B2 (en) * 2013-03-15 2014-10-21 Silicon Storage Technology, Inc. Hybrid chargepump and regulation means and method for flash memory device
US8981835B2 (en) 2013-06-18 2015-03-17 Sandisk Technologies Inc. Efficient voltage doubler
US9024680B2 (en) 2013-06-24 2015-05-05 Sandisk Technologies Inc. Efficiency for charge pumps with low supply voltages
US9077238B2 (en) 2013-06-25 2015-07-07 SanDisk Technologies, Inc. Capacitive regulation of charge pumps without refresh operation interruption
US9007046B2 (en) 2013-06-27 2015-04-14 Sandisk Technologies Inc. Efficient high voltage bias regulation circuit
US9083231B2 (en) 2013-09-30 2015-07-14 Sandisk Technologies Inc. Amplitude modulation for pass gate to improve charge pump efficiency
US9154027B2 (en) * 2013-12-09 2015-10-06 Sandisk Technologies Inc. Dynamic load matching charge pump for reduced current consumption
CN105337496B (zh) * 2014-05-29 2019-06-25 展讯通信（上海）有限公司 基于压控振荡器的脉冲频率调制电路
CN104143907B (zh) * 2014-08-15 2017-10-31 中国科学院微电子研究所 非连续性电流控制的双环电荷泵控制电路
US9917507B2 (en) 2015-05-28 2018-03-13 Sandisk Technologies Llc Dynamic clock period modulation scheme for variable charge pump load currents
US9647536B2 (en) 2015-07-28 2017-05-09 Sandisk Technologies Llc High voltage generation using low voltage devices
US9520776B1 (en) 2015-09-18 2016-12-13 Sandisk Technologies Llc Selective body bias for charge pump transfer switches
US10637351B2 (en) 2016-07-25 2020-04-28 Taiwan Semiconductor Manufacturing Co., Ltd. Regulated voltage systems and methods using intrinsically varied process characteristics
CN114400888B (zh) * 2022-01-25 2023-10-10 无锡英迪芯微电子科技股份有限公司 一种自适应混合线性调制和频率调制的电荷泵电路

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EP0108409B1 (de) * 1980-04-28 1987-03-25 Fujitsu Limited Generatorschaltung einer Temperaturkompensationsspannung
GB2121629B (en) * 1982-05-18 1985-10-23 Standard Telephones Cables Ltd Temperature controlled crystal oscillator
JPH07120946B2 (ja) * 1985-06-25 1995-12-20 キヤノン株式会社 位相同期回路
US4823070A (en) * 1986-11-18 1989-04-18 Linear Technology Corporation Switching voltage regulator circuit
US4825142A (en) * 1987-06-01 1989-04-25 Texas Instruments Incorporated CMOS substrate charge pump voltage regulator
US5670907A (en) * 1995-03-14 1997-09-23 Lattice Semiconductor Corporation VBB reference for pumped substrates
US5963105A (en) * 1997-07-31 1999-10-05 Dallas Semiconductor Corporation Trimmable circuitry for providing compensation for the temperature coefficients of a voltage controlled crystal-less oscillator
JP4060424B2 (ja) * 1998-02-03 2008-03-12 沖電気工業株式会社 チャージポンプ回路の駆動回路

Also Published As

Publication number Publication date
CN1466807A (zh) 2004-01-07
EP1323226B1 (de) 2009-05-06
KR20030043974A (ko) 2003-06-02
EP1323226A2 (de) 2003-07-02
AU2001294760A1 (en) 2002-04-08
CN1230969C (zh) 2005-12-07
US6356062B1 (en) 2002-03-12
KR100548910B1 (ko) 2006-02-02
WO2002027903A2 (en) 2002-04-04
ATE431008T1 (de) 2009-05-15
WO2002027903A3 (en) 2002-08-29
TW538574B (en) 2003-06-21

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Representative=s name: HEYER, V., DIPL.-PHYS. DR.RER.NAT., PAT.-ANW., 806

8327 Change in the person/name/address of the patent owner

Owner name: NUMONYX B.V., ROLLE, CH