DE60142916D1 - Ätzverfahren - Google Patents

Ätzverfahren

Info

Publication number
DE60142916D1
DE60142916D1 DE60142916T DE60142916T DE60142916D1 DE 60142916 D1 DE60142916 D1 DE 60142916D1 DE 60142916 T DE60142916 T DE 60142916T DE 60142916 T DE60142916 T DE 60142916T DE 60142916 D1 DE60142916 D1 DE 60142916D1
Authority
DE
Germany
Prior art keywords
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60142916T
Other languages
English (en)
Inventor
Takeo Kawase
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Application granted granted Critical
Publication of DE60142916D1 publication Critical patent/DE60142916D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
    • H10K71/236—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers using printing techniques, e.g. applying the etch liquid using an ink jet printer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/17—Passive-matrix OLED displays
DE60142916T 2000-10-16 2001-10-15 Ätzverfahren Expired - Lifetime DE60142916D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB0025342A GB2367788A (en) 2000-10-16 2000-10-16 Etching using an ink jet print head
PCT/GB2001/004591 WO2002033740A1 (en) 2000-10-16 2001-10-15 Etching process

Publications (1)

Publication Number Publication Date
DE60142916D1 true DE60142916D1 (de) 2010-10-07

Family

ID=9901387

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60142916T Expired - Lifetime DE60142916D1 (de) 2000-10-16 2001-10-15 Ätzverfahren

Country Status (8)

Country Link
US (1) US7431860B2 (de)
EP (1) EP1327259B1 (de)
JP (2) JP4269680B2 (de)
KR (1) KR100496473B1 (de)
CN (1) CN1311532C (de)
DE (1) DE60142916D1 (de)
GB (1) GB2367788A (de)
WO (1) WO2002033740A1 (de)

Families Citing this family (73)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7550794B2 (en) * 2002-09-20 2009-06-23 Idc, Llc Micromechanical systems device comprising a displaceable electrode and a charge-trapping layer
JP3932099B2 (ja) * 2002-02-06 2007-06-20 セイコーエプソン株式会社 エッチング方法
WO2004017439A2 (de) * 2002-07-29 2004-02-26 Siemens Aktiengesellschaft Elektronisches bauteil mit vorwiegend organischen funktionsmaterialien und herstellungsverfahren dazu
GB0218202D0 (en) 2002-08-06 2002-09-11 Avecia Ltd Organic light emitting diodes
US7781850B2 (en) 2002-09-20 2010-08-24 Qualcomm Mems Technologies, Inc. Controlling electromechanical behavior of structures within a microelectromechanical systems device
JP2004172389A (ja) 2002-11-20 2004-06-17 Renesas Technology Corp 半導体装置およびその製造方法
KR100985418B1 (ko) * 2002-11-26 2010-10-05 이 잉크 코포레이션 가요성 전자 회로 및 디스플레이
US7585781B2 (en) 2003-09-09 2009-09-08 Csg Solar Ag Method of forming openings in an organic resin material
AU2004271223B2 (en) * 2003-09-09 2010-02-18 Csg Solar Ag Improved method of etching silicon
AU2004271225B2 (en) * 2003-09-09 2010-01-21 Csg Solar Ag Improved method of forming openings in an organic resin material
JP2007505486A (ja) * 2003-09-09 2007-03-08 シーエスジー ソーラー アクチェンゲゼルシャフト リフローによるマスクの調整
CN100546006C (zh) * 2003-09-09 2009-09-30 Csg索拉尔有限公司 蚀刻硅的改进方法
DE10358830B3 (de) * 2003-12-16 2005-08-18 Framatome Anp Gmbh Brennelement für einen Druckwasserkernreaktor und mit solchen Brennelementen aufgebauter Kern eines Druckwasserreaktors
US7036220B2 (en) * 2003-12-18 2006-05-02 The Regents Of The University Of California Pin-deposition of conductive inks for microelectrodes and contact via filling
CN100338746C (zh) * 2004-01-05 2007-09-19 财团法人工业技术研究院 一种形成导电栓柱的方法
TWI256269B (en) * 2004-03-05 2006-06-01 Toshiba Matsushita Display Tec Method of manufacturing display device
JP2006019672A (ja) * 2004-06-02 2006-01-19 Seiko Epson Corp トランジスタの製造方法、電気光学装置の製造方法、および電子デバイスの製造方法
JP3879751B2 (ja) 2004-07-27 2007-02-14 セイコーエプソン株式会社 コンタクトホールの形成方法、回路基板の製造方法、及び、電気光学装置の製造方法
EP2246726B1 (de) * 2004-07-29 2013-04-03 QUALCOMM MEMS Technologies, Inc. System und Verfahren zum mikroelektromechanischen Betrieb eines interferometrischen Modulators
US7105375B2 (en) * 2004-07-30 2006-09-12 Xerox Corporation Reverse printing
JP2006075687A (ja) * 2004-09-08 2006-03-23 Seiko Epson Corp 液滴吐出装置、ヘッドのクリーニング方法、電気光学装置の製造方法、電気光学装置および電子機器
US8691667B1 (en) * 2004-12-30 2014-04-08 E. I. Du Pont De Nemours And Company Method and apparatus for depositing a pattern on a substrate
TW200628877A (en) * 2005-02-04 2006-08-16 Prime View Int Co Ltd Method of manufacturing optical interference type color display
US7691280B2 (en) * 2005-03-25 2010-04-06 E. I. Du Pont De Nemours And Company Ink jet printing of etchants and modifiers
US7667929B2 (en) * 2005-04-04 2010-02-23 Hitachi Global Storage Technologies Netherlands B.V. Apparatus, method and system for fabricating a patterned media imprint master
JP4341579B2 (ja) * 2005-05-19 2009-10-07 セイコーエプソン株式会社 マイクロレンズの製造方法
JP2008544509A (ja) * 2005-06-16 2008-12-04 シーメンス アクチエンゲゼルシヤフト 有機ライン検出器および有機ライン検出器の製造方法
EP2495212A3 (de) * 2005-07-22 2012-10-31 QUALCOMM MEMS Technologies, Inc. MEMS-Vorrichtungen mit Stützstrukturen und Herstellungsverfahren dafür
KR20080040715A (ko) * 2005-07-22 2008-05-08 콸콤 인코포레이티드 Ｍｅｍｓ 장치를 위한 지지 구조물 및 그 방법들
US7795061B2 (en) * 2005-12-29 2010-09-14 Qualcomm Mems Technologies, Inc. Method of creating MEMS device cavities by a non-etching process
KR100753959B1 (ko) * 2006-01-12 2007-08-31 에이펫(주) 기판 건조장치를 이용한 기판 건조방법
US7382515B2 (en) * 2006-01-18 2008-06-03 Qualcomm Mems Technologies, Inc. Silicon-rich silicon nitrides as etch stops in MEMS manufacture
US7450295B2 (en) * 2006-03-02 2008-11-11 Qualcomm Mems Technologies, Inc. Methods for producing MEMS with protective coatings using multi-component sacrificial layers
US20070249078A1 (en) * 2006-04-19 2007-10-25 Ming-Hau Tung Non-planar surface structures and process for microelectromechanical systems
GB2439594A (en) * 2006-06-07 2008-01-02 Seiko Epson Corp A method for forming a predetermined pattern of an organic semiconductor
US7763546B2 (en) * 2006-08-02 2010-07-27 Qualcomm Mems Technologies, Inc. Methods for reducing surface charges during the manufacture of microelectromechanical systems devices
EP1933393A1 (de) * 2006-12-13 2008-06-18 Samsung SDI Co., Ltd. Verfahren zur Herstellung ein Substrat für eine elektronische Vorrichtung
JP4801037B2 (ja) * 2006-12-13 2011-10-26 三星モバイルディスプレイ株式會社 電子素子、及びその製造方法
US7733552B2 (en) * 2007-03-21 2010-06-08 Qualcomm Mems Technologies, Inc MEMS cavity-coating layers and methods
US7719752B2 (en) * 2007-05-11 2010-05-18 Qualcomm Mems Technologies, Inc. MEMS structures, methods of fabricating MEMS components on separate substrates and assembly of same
JP5501225B2 (ja) * 2007-05-24 2014-05-21 インターナショナル・ビジネス・マシーンズ・コーポレーション 薄層型光電池の背面コンタクト形成方法
US7838062B2 (en) 2007-05-29 2010-11-23 Sunpower Corporation Array of small contacts for solar cell fabrication
WO2009094711A1 (en) * 2008-02-01 2009-08-06 Newsouth Innovations Pty Limited Method for patterned etching of selected material
US20090261067A1 (en) * 2008-04-22 2009-10-22 Robert Alan Dietrich Methods and apparatus for prototyping three dimensional objects from a plurality of layers
CN101590775A (zh) * 2008-05-28 2009-12-02 Icf科技有限公司 塑胶元件表面处理方法
US7851239B2 (en) * 2008-06-05 2010-12-14 Qualcomm Mems Technologies, Inc. Low temperature amorphous silicon sacrificial layer for controlled adhesion in MEMS devices
FR2937181B1 (fr) * 2008-10-10 2011-01-14 Commissariat Energie Atomique Structuration en surface de couches minces par ejection localisee de liquide immiscible.
JP5396916B2 (ja) * 2009-03-03 2014-01-22 コニカミノルタ株式会社 透明電極の製造方法、透明電極および有機エレクトロルミネッセンス素子
US7864403B2 (en) * 2009-03-27 2011-01-04 Qualcomm Mems Technologies, Inc. Post-release adjustment of interferometric modulator reflectivity
EP2438140A1 (de) * 2009-06-04 2012-04-11 Merck Patent GmbH Zweikomponentiges ätzen
WO2011032218A1 (en) * 2009-09-18 2011-03-24 Newsouth Innovations Pty Limited Method for texturing surfaces
EP2491482B1 (de) * 2009-10-23 2018-08-15 M-Solv Limited Kapazitive berührungsbildschirme
US8415183B2 (en) * 2010-11-22 2013-04-09 Tsmc Solid State Lighting Ltd. Wafer level conformal coating for LED devices
US20130300281A1 (en) * 2011-01-21 2013-11-14 Zhang-Lin Zhou Copolymers for luminescence enhancement in reflective display applications
CN102206892A (zh) * 2011-05-26 2011-10-05 姚先均 织袜机的落袜筒及其生产方法
US9680097B2 (en) 2013-04-06 2017-06-13 Indian Institute Of Technology Kanpur Organic thin film transistors and methods for their manufacturing and use
KR102135275B1 (ko) 2013-07-29 2020-07-20 삼성디스플레이 주식회사 박막 트랜지스터 기판, 이의 제조 방법 및 이를 포함하는 표시 장치
KR101577900B1 (ko) * 2014-06-24 2015-12-29 동국대학교 산학협력단 국부적 에칭공정을 이용한 유기박막 트랜지스터 및 이의 제조방법
NO2750604T3 (de) 2015-06-25 2018-03-03
CA2990278C (en) * 2015-07-03 2024-02-13 National Research Council Of Canada Method of printing ultranarrow-gap lines
DE102016224870A1 (de) * 2016-12-13 2018-06-14 Robert Bosch Gmbh Verfahren zur Herstellung einer Leiterbildstruktur auf einem mit Metall beschichteten Substrat und Bauteil
HUE050387T2 (hu) 2017-06-13 2020-11-30 Hymmen Gmbh Maschinen & Anlagenbau Eljárás és eszköz strukturált felület kialakítására
CN108281467A (zh) * 2018-01-22 2018-07-13 京东方科技集团股份有限公司 像素界定层、显示基板及其制作方法、显示装置
KR20190111547A (ko) * 2018-03-23 2019-10-02 엘지전자 주식회사 가전제품용 외장패널 및 그 제조방법
IT201900007377A1 (it) * 2019-05-28 2020-11-28 Giorgio Macor Metodo e apparato per generare una struttura superficiale
IT201800008133A1 (it) * 2018-08-22 2020-02-22 Giorgio Macor Metodo e apparato per generare una struttura tridimensionale
CN113272775A (zh) 2018-08-30 2021-08-17 英特飞公司 用于地板和装饰结构的数字印刷
CN109212827A (zh) * 2018-08-31 2019-01-15 深圳市华星光电技术有限公司 一种柔性lcd及其制备方法
CN109972128A (zh) * 2019-03-29 2019-07-05 南昌大学 喷墨打印结合无电镀工艺制备超薄金属网格柔性透明电极的方法
DE102019206431A1 (de) 2019-05-03 2020-11-05 Hymmen GmbH Maschinen- und Anlagenbau Verfahren zum Herstellen einer Struktur auf einer Oberfläche
KR102260364B1 (ko) * 2019-12-11 2021-06-02 가천대학교 산학협력단 물방울의 공명주파수를 이용한 에칭장치 및 이를 이용한 에칭방법
JP7404878B2 (ja) 2020-01-09 2023-12-26 コニカミノルタ株式会社 有機エレクトロルミネッセンス素子及びその製造方法
EP3865308A1 (de) 2020-02-12 2021-08-18 Jesús Francisco Barberan Latorre Verfahren und maschine zur herstellung von reliefs sowie paneele mit diesen reliefs

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1521965A1 (de) * 1964-10-12 1969-05-14 Siemens Ag Verfahren zum Zerteilen metallbeschichteter Si-Scheiben
DE3047884A1 (de) * 1980-12-18 1982-07-15 Siemens AG, 1000 Berlin und 8000 München Vorrichtung zur automatisierbaren bearbeitung in der halbleitertechnologie, z.b. von leiterplatten
DE3338717A1 (de) * 1983-10-25 1985-05-02 Siemens AG, 1000 Berlin und 8000 München Verfahren zur herstellung einer roentgenmaske mit metalltraegerfolie
US4849066A (en) * 1988-09-23 1989-07-18 Rca Licensing Corporation Method for selectively etching integral cathode substrate and support utilizing increased etchant turbulence
JPH0325937A (ja) * 1989-06-22 1991-02-04 Mitsubishi Electric Corp 半導体装置の製造方法
JPH04225231A (ja) * 1990-12-26 1992-08-14 Kawasaki Steel Corp シリコンウエハのエッチング方法及びその装置
US5275658A (en) * 1991-12-13 1994-01-04 Tokyo Electron Limited Liquid supply apparatus
JPH05303009A (ja) * 1992-04-28 1993-11-16 Dainippon Printing Co Ltd マイクロレンズアレー原版およびマイクロレンズアレー作製方法
GB2294909B (en) * 1994-11-14 1996-10-23 High End Systems Inc Acid etched gobo
JP3370459B2 (ja) * 1994-11-15 2003-01-27 積水化学工業株式会社 撥水性被膜の製造方法
JPH08279484A (ja) * 1995-04-07 1996-10-22 Hitachi Cable Ltd 半導体ウェハのエッチング方法及び装置
JP3753194B2 (ja) * 1995-12-14 2006-03-08 セイコーエプソン株式会社 プラズマ処理方法及びその装置
DE69724107T2 (de) * 1996-03-04 2004-06-24 DuPont Displays, Inc., Santa Barbara Polyfluorene als materialien für photolumineszenz und elektrolumineszenz
US5882489A (en) * 1996-04-26 1999-03-16 Ulvac Technologies, Inc. Processes for cleaning and stripping photoresist from surfaces of semiconductor wafers
US6106907A (en) * 1996-06-25 2000-08-22 Canon Kabushiki Kaisha Electrode plate, liquid crystal device and production thereof
US5677237A (en) * 1996-06-21 1997-10-14 Taiwan Semiconductor Manufacturing Company Ltd. Process for removing seams in tungsten plugs
JPH10106747A (ja) * 1996-09-26 1998-04-24 Mitsubishi Electric Corp 有機エレクトロルミネッセンス表示装置およびその製法
JP3612158B2 (ja) * 1996-11-18 2005-01-19 スピードファム株式会社 プラズマエッチング方法及びその装置
JP3785710B2 (ja) * 1996-12-24 2006-06-14 株式会社デンソー Ｅｌ表示装置
JP2001521269A (ja) * 1997-10-17 2001-11-06 ザ リージェンツ オブ ザ ユニヴァーシティー オブ カリフォルニア インクジェット印刷技術を使って有機半導体装置を製造する方法、およびこれを利用した装置およびシステム
JP4003273B2 (ja) 1998-01-19 2007-11-07 セイコーエプソン株式会社 パターン形成方法および基板製造装置
GB9808061D0 (en) * 1998-04-16 1998-06-17 Cambridge Display Tech Ltd Polymer devices
JP3564294B2 (ja) * 1998-04-20 2004-09-08 シャープ株式会社 薄膜ｅｌパネルおよびその製造方法およびカラーｅｌパネル装置
US6033939A (en) * 1998-04-21 2000-03-07 International Business Machines Corporation Method for providing electrically fusible links in copper interconnection
JP2000104182A (ja) * 1998-09-30 2000-04-11 Seiko Epson Corp ウェットエッチング方法および装置、インクジェットヘッドの振動板の製造方法、インクジェットヘッド、並びにインクジェット記録装置
JP2000171814A (ja) * 1998-12-07 2000-06-23 Hitachi Ltd 液晶パネル基板の導電性薄膜パターニング方法および装置
CA2394895C (en) 1999-12-21 2014-01-28 Plastic Logic Limited Forming interconnects
GB2373095A (en) * 2001-03-09 2002-09-11 Seiko Epson Corp Patterning substrates with evaporation residues

Also Published As

Publication number Publication date
JP2004512642A (ja) 2004-04-22
WO2002033740A1 (en) 2002-04-25
GB2367788A (en) 2002-04-17
CN1311532C (zh) 2007-04-18
JP2008235284A (ja) 2008-10-02
KR20020062757A (ko) 2002-07-29
JP4269680B2 (ja) 2009-05-27
GB0025342D0 (en) 2000-11-29
US7431860B2 (en) 2008-10-07
KR100496473B1 (ko) 2005-06-22
JP4544343B2 (ja) 2010-09-15
EP1327259B1 (de) 2010-08-25
US20030029831A1 (en) 2003-02-13
EP1327259A1 (de) 2003-07-16
CN1404625A (zh) 2003-03-19

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