DE60143656D1 - Induktive ladungspumpschaltung zur bereitstellung von spannungen für flash speicher und sonstige anwendungen - Google Patents

Induktive ladungspumpschaltung zur bereitstellung von spannungen für flash speicher und sonstige anwendungen

Info

Publication number
DE60143656D1
DE60143656D1 DE60143656T DE60143656T DE60143656D1 DE 60143656 D1 DE60143656 D1 DE 60143656D1 DE 60143656 T DE60143656 T DE 60143656T DE 60143656 T DE60143656 T DE 60143656T DE 60143656 D1 DE60143656 D1 DE 60143656D1
Authority
DE
Germany
Prior art keywords
switching device
inductive element
inductive
control signal
output voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60143656T
Other languages
English (en)
Inventor
Jahanshir Javanifard
Priya Walimbe
Richard Foehringer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Numonyx BV Amsterdam Rolle Branch
Original Assignee
Numonyx BV Amsterdam Rolle Branch
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Numonyx BV Amsterdam Rolle Branch filed Critical Numonyx BV Amsterdam Rolle Branch
Application granted granted Critical
Publication of DE60143656D1 publication Critical patent/DE60143656D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
DE60143656T 2000-06-30 2001-06-01 Induktive ladungspumpschaltung zur bereitstellung von spannungen für flash speicher und sonstige anwendungen Expired - Lifetime DE60143656D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/607,483 US6469482B1 (en) 2000-06-30 2000-06-30 Inductive charge pump circuit for providing voltages useful for flash memory and other applications
PCT/US2001/017846 WO2002003389A1 (en) 2000-06-30 2001-06-01 Inductive charge pump circuit for providing voltages useful for flash memory and other applications

Publications (1)

Publication Number Publication Date
DE60143656D1 true DE60143656D1 (de) 2011-01-27

Family

ID=24432478

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60143656T Expired - Lifetime DE60143656D1 (de) 2000-06-30 2001-06-01 Induktive ladungspumpschaltung zur bereitstellung von spannungen für flash speicher und sonstige anwendungen

Country Status (9)

Country Link
US (2) US6469482B1 (de)
EP (1) EP1297530B1 (de)
CN (1) CN100524505C (de)
AT (1) ATE492020T1 (de)
AU (1) AU2001275143A1 (de)
DE (1) DE60143656D1 (de)
HK (1) HK1052576A1 (de)
TW (1) TW519657B (de)
WO (1) WO2002003389A1 (de)

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US6903535B2 (en) * 2002-04-16 2005-06-07 Arques Technology, Inc. Biasing system and method for low voltage DC—DC converters with built-in N-FETs
DE60317457D1 (de) * 2003-01-31 2007-12-27 St Microelectronics Srl Einbettbares Flashspeichersystem für nichtflüchtige Speicherung von Kode, Daten und Bitströmen für eingebettete FPGA-Konfigurationen
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CN1323434C (zh) * 2003-09-02 2007-06-27 台湾积体电路制造股份有限公司 整合闪存与高电压组件的制造方法
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WO2005109732A2 (en) * 2004-04-30 2005-11-17 Custom One Design, Inc. Low power direct conversion rf transceiver architecture and asic and systems including such
WO2006016319A2 (en) * 2004-08-09 2006-02-16 Koninklijke Philips Electronics N.V. Power converter and method for power conversion
KR100622892B1 (ko) * 2004-12-09 2006-09-19 엘지전자 주식회사 저 전력소비형 이동통신 단말기
ITMI20050607A1 (it) * 2005-04-11 2006-10-12 St Microelectronics Srl Dispositivo elettronico integrato a bassa tensione di alimentazione
WO2006129339A1 (ja) * 2005-05-30 2006-12-07 Spansion Llc 記憶装置、および記憶装置の制御方法
JPWO2007043095A1 (ja) * 2005-09-30 2009-04-16 スパンション エルエルシー 記憶装置、および記憶装置の制御方法
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US20080107013A1 (en) * 2006-11-06 2008-05-08 Nokia Corporation Signature generation using coded waveforms
ITVA20060071A1 (it) * 2006-12-05 2008-06-06 St Microelectronics Srl Regolatore di tensione con soli transistori del tipo high voltage
CN102044285B (zh) * 2009-10-22 2013-11-06 鸿富锦精密工业（深圳）有限公司 内存供电电路
JP2011216136A (ja) * 2010-03-31 2011-10-27 Fujitsu Semiconductor Ltd 半導体集積回路装置
TWI418130B (zh) * 2011-05-19 2013-12-01 Univ Nat Taipei Technology Step-up conversion circuit
US8723491B2 (en) * 2011-12-19 2014-05-13 Arctic Sand Technologies, Inc. Control of power converters with capacitive energy transfer
US8619445B1 (en) 2013-03-15 2013-12-31 Arctic Sand Technologies, Inc. Protection of switched capacitor power converter
CN104716837B (zh) * 2013-12-17 2018-06-15 通用电气公司 升降压变换器和升降压控制方法
US9680374B2 (en) 2014-05-27 2017-06-13 Marcus Allen Smith DC to DC boost converter utilizing storage capacitors charged by parallel inductor
KR102571572B1 (ko) * 2018-12-05 2023-08-29 에스케이하이닉스 주식회사 전압 강하 레벨을 검출하기 위한 반도체 장치 및 반도체 시스템
US11145378B2 (en) * 2019-02-19 2021-10-12 Texas Instruments Incorporated Methods and apparatus to improve performance while reading a one-time programmable memory
US11171477B2 (en) * 2019-02-22 2021-11-09 Texas Instruments Incorporated Turn off circuit for protection switch

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Also Published As

Publication number Publication date
CN100524505C (zh) 2009-08-05
WO2002003389A1 (en) 2002-01-10
HK1052576A1 (zh) 2003-09-19
EP1297530B1 (de) 2010-12-15
US20030006742A1 (en) 2003-01-09
CN1483204A (zh) 2004-03-17
US6469482B1 (en) 2002-10-22
TW519657B (en) 2003-02-01
ATE492020T1 (de) 2011-01-15
US6744669B2 (en) 2004-06-01
EP1297530A1 (de) 2003-04-02
AU2001275143A1 (en) 2002-01-14

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