DE60144546D1 - Saphirsubstrat, elektronisches Bauelement und Verfahren zu dessen Herstellung - Google Patents
Saphirsubstrat, elektronisches Bauelement und Verfahren zu dessen HerstellungInfo
- Publication number
- DE60144546D1 DE60144546D1 DE60144546T DE60144546T DE60144546D1 DE 60144546 D1 DE60144546 D1 DE 60144546D1 DE 60144546 T DE60144546 T DE 60144546T DE 60144546 T DE60144546 T DE 60144546T DE 60144546 D1 DE60144546 D1 DE 60144546D1
- Authority
- DE
- Germany
- Prior art keywords
- making
- same
- electronic component
- sapphire substrate
- sapphire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02433—Crystal orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/938—Lattice strain control or utilization
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000245626 | 2000-08-14 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60144546D1 true DE60144546D1 (de) | 2011-06-16 |
Family
ID=18736114
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60144546T Expired - Lifetime DE60144546D1 (de) | 2000-08-14 | 2001-08-14 | Saphirsubstrat, elektronisches Bauelement und Verfahren zu dessen Herstellung |
Country Status (3)
Country | Link |
---|---|
US (1) | US6586819B2 (de) |
EP (1) | EP1182697B1 (de) |
DE (1) | DE60144546D1 (de) |
Families Citing this family (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4055503B2 (ja) | 2001-07-24 | 2008-03-05 | 日亜化学工業株式会社 | 半導体発光素子 |
US8809867B2 (en) * | 2002-04-15 | 2014-08-19 | The Regents Of The University Of California | Dislocation reduction in non-polar III-nitride thin films |
AU2003223563A1 (en) * | 2002-04-15 | 2003-11-03 | The Regents Of The University Of California | NON-POLAR (A1,B,In,Ga) QUANTUM WELL AND HETEROSTRUCTURE MATERIALS AND DEVICES |
US6835957B2 (en) * | 2002-07-30 | 2004-12-28 | Lumileds Lighting U.S., Llc | III-nitride light emitting device with p-type active layer |
US20050006635A1 (en) * | 2003-03-26 | 2005-01-13 | Kyocera Corporation | Semiconductor apparatus, method for growing nitride semiconductor and method for producing semiconductor apparatus |
JP4218597B2 (ja) * | 2003-08-08 | 2009-02-04 | 住友電気工業株式会社 | 半導体発光素子の製造方法 |
KR100576850B1 (ko) * | 2003-10-28 | 2006-05-10 | 삼성전기주식회사 | 질화물 반도체 발광소자 제조방법 |
GB2407700A (en) * | 2003-10-28 | 2005-05-04 | Sharp Kk | MBE growth of nitride semiconductor lasers |
US7323256B2 (en) | 2003-11-13 | 2008-01-29 | Cree, Inc. | Large area, uniformly low dislocation density GaN substrate and process for making the same |
US7087965B2 (en) * | 2004-04-22 | 2006-08-08 | International Business Machines Corporation | Strained silicon CMOS on hybrid crystal orientations |
TWI453813B (zh) | 2005-03-10 | 2014-09-21 | Univ California | 用於生長平坦半極性的氮化鎵之技術 |
DE102005021099A1 (de) | 2005-05-06 | 2006-12-07 | Universität Ulm | GaN-Schichten |
JP5236148B2 (ja) * | 2005-05-12 | 2013-07-17 | 日本碍子株式会社 | エピタキシャル基板、半導体素子、エピタキシャル基板の製造方法、半導体素子の製造方法、およびiii族窒化物結晶における転位偏在化方法 |
JP5743127B2 (ja) | 2005-06-01 | 2015-07-01 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | 半極性(Ga,Al,In,B)N薄膜、ヘテロ構造およびデバイスの成長と作製のための方法及び装置 |
DE112006001847B4 (de) * | 2005-07-11 | 2011-02-17 | Cree, Inc. | Ausrichtung von Laserdioden auf fehlgeschnittenen Substraten |
US7691658B2 (en) | 2006-01-20 | 2010-04-06 | The Regents Of The University Of California | Method for improved growth of semipolar (Al,In,Ga,B)N |
US8421119B2 (en) * | 2006-09-13 | 2013-04-16 | Rohm Co., Ltd. | GaN related compound semiconductor element and process for producing the same and device having the same |
KR101172942B1 (ko) * | 2006-10-20 | 2012-08-14 | 도꾸리쯔교세이호징 리가가쿠 겐큐소 | 사파이어 기판 및 그것을 이용하는 질화물 반도체 발광 소자 및 질화물 반도체 발광 소자의 제조 방법 |
JP5109333B2 (ja) * | 2006-10-26 | 2012-12-26 | サンケン電気株式会社 | 電源装置 |
JP2010512661A (ja) * | 2006-12-11 | 2010-04-22 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | 高特性無極性iii族窒化物光デバイスの有機金属化学気相成長法(mocvd)による成長 |
WO2009011394A1 (ja) * | 2007-07-17 | 2009-01-22 | Sumitomo Electric Industries, Ltd. | 電子デバイスを作製する方法、エピタキシャル基板を作製する方法、iii族窒化物半導体素子及び窒化ガリウムエピタキシャル基板 |
WO2009124317A2 (en) * | 2008-04-04 | 2009-10-08 | The Regents Of The University Of California | Mocvd growth technique for planar semipolar (al, in, ga, b)n based light emitting diodes |
JP2009272380A (ja) * | 2008-05-01 | 2009-11-19 | Sumitomo Electric Ind Ltd | Iii族窒化物結晶およびその表面処理方法、iii族窒化物積層体およびその製造方法、ならびにiii族窒化物半導体デバイスおよびその製造方法 |
JP2010016092A (ja) * | 2008-07-02 | 2010-01-21 | Sharp Corp | 窒化物系半導体発光素子 |
KR20130035995A (ko) | 2010-02-10 | 2013-04-09 | 다카후미 야오 | 구조체, 및 반도체 기판의 제조 방법 |
CN102687292B (zh) * | 2010-04-01 | 2014-09-24 | 松下电器产业株式会社 | 氮化物系半导体元件及其制造方法 |
US8729486B2 (en) * | 2010-06-23 | 2014-05-20 | The Board Of Trustees Of The Leland Stanford Junior University | MODFET active pixel X-ray detector |
US10052848B2 (en) | 2012-03-06 | 2018-08-21 | Apple Inc. | Sapphire laminates |
JP5874495B2 (ja) * | 2012-03-29 | 2016-03-02 | 豊田合成株式会社 | Gaを含むIII族窒化物半導体の製造方法 |
US9221289B2 (en) | 2012-07-27 | 2015-12-29 | Apple Inc. | Sapphire window |
JP5343224B1 (ja) * | 2012-09-28 | 2013-11-13 | Roca株式会社 | 半導体装置および結晶 |
US9232672B2 (en) | 2013-01-10 | 2016-01-05 | Apple Inc. | Ceramic insert control mechanism |
US9252324B2 (en) * | 2013-05-30 | 2016-02-02 | Globalfoundries Inc | Heterojunction light emitting diode |
US9632537B2 (en) | 2013-09-23 | 2017-04-25 | Apple Inc. | Electronic component embedded in ceramic material |
US9678540B2 (en) | 2013-09-23 | 2017-06-13 | Apple Inc. | Electronic component embedded in ceramic material |
US9154678B2 (en) | 2013-12-11 | 2015-10-06 | Apple Inc. | Cover glass arrangement for an electronic device |
US9225056B2 (en) | 2014-02-12 | 2015-12-29 | Apple Inc. | Antenna on sapphire structure |
US9553181B2 (en) * | 2015-06-01 | 2017-01-24 | Toshiba Corporation | Crystalline-amorphous transition material for semiconductor devices and method for formation |
US10406634B2 (en) | 2015-07-01 | 2019-09-10 | Apple Inc. | Enhancing strength in laser cutting of ceramic components |
JP6306677B1 (ja) | 2016-12-19 | 2018-04-04 | 古河機械金属株式会社 | Iii族窒化物半導体基板、及び、iii族窒化物半導体基板の製造方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2704181B2 (ja) | 1989-02-13 | 1998-01-26 | 日本電信電話株式会社 | 化合物半導体単結晶薄膜の成長方法 |
US6083812A (en) * | 1993-02-02 | 2000-07-04 | Texas Instruments Incorporated | Heteroepitaxy by large surface steps |
US6072197A (en) * | 1996-02-23 | 2000-06-06 | Fujitsu Limited | Semiconductor light emitting device with an active layer made of semiconductor having uniaxial anisotropy |
CA2258080C (en) * | 1997-04-11 | 2007-06-05 | Nichia Chemical Industries, Ltd. | Nitride semiconductor growth method, nitride semiconductor substrate, and nitride semiconductor device |
US6265089B1 (en) * | 1999-07-15 | 2001-07-24 | The United States Of America As Represented By The Secretary Of The Navy | Electronic devices grown on off-axis sapphire substrate |
-
2001
- 2001-08-10 US US09/927,223 patent/US6586819B2/en not_active Expired - Lifetime
- 2001-08-14 DE DE60144546T patent/DE60144546D1/de not_active Expired - Lifetime
- 2001-08-14 EP EP01119516A patent/EP1182697B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP1182697B1 (de) | 2011-05-04 |
US20020033521A1 (en) | 2002-03-21 |
EP1182697A3 (de) | 2006-06-28 |
EP1182697A2 (de) | 2002-02-27 |
US6586819B2 (en) | 2003-07-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE60144546D1 (de) | Saphirsubstrat, elektronisches Bauelement und Verfahren zu dessen Herstellung | |
DE60143504D1 (de) | Keramisches elektronisches Mehrschichtbauelement und Verfahren zu dessen Herstellung | |
DE60042666D1 (de) | Halbleiterbauelement und Verfahren zu dessen Herstellung | |
DE60232385D1 (de) | Einkristallines, mit Sauerstoff dotiertes N-Galliumnitrid-Substrat und Verfahren zu dessen Herstellung | |
DE50212077D1 (de) | Piezoelektrisches bauelement und verfahren zu dessen herstellung | |
DE60141211D1 (de) | Polysilizium-halbleiterbauteil und verfahren zu dessen herstellung | |
DE60044221D1 (de) | Lumineszierendes Halbleiterelement und Verfahren zu dessen Herstellung | |
DE60324376D1 (de) | Halbleiterbauelement und Verfahren zu dessen Herstellung | |
DE60325690D1 (de) | Halbleiterbauelement und verfahren zu seiner herstellung | |
ATA10852001A (de) | Bauelement und verfahren zu seiner herstellung | |
DE60113215D1 (de) | Halbleitervorrichtung und Verfahren zu dessen Herstellung | |
DE50214717D1 (de) | Und verfahren zu seiner herstellung | |
DE69938767D1 (de) | Halbleiterbauelement und dessen herstellungsverfahren, bauelementsubstrat, und elektronisches bauelement | |
DE50103010D1 (de) | Induktives bauelement und verfahren zu seiner herstellung | |
DE69941879D1 (de) | Feldeffekt-halbleiterbauelement und verfahren zu dessen herstellung | |
DE60239464D1 (de) | Piezoelektrisches porzellan und verfahren zu seiner herstellung | |
DE60217943D1 (de) | Nitrid-Halbleitervorrichtung und Verfahren zu deren Herstellung | |
DE10216633B8 (de) | Halbleiteranordnung und Verfahren zur Herstellung der Halbleiteranordnung | |
DE69930700D1 (de) | Halbleitersubstrat und Verfahren zu seiner Herstellung | |
DE69909663D1 (de) | Elektronisches Vielschichtbauteil und Verfahren zu seiner Herstellung | |
DE60208523D1 (de) | Spulenbauteil und verfahren zu seiner herstellung | |
DE60116486D1 (de) | Gallengangstent und verfahren zu seiner herstellung | |
DE60239493D1 (de) | Halbleiterbauelement und verfahren zu seiner herstellung | |
DE60224880D1 (de) | Mikrobolometer und verfahren zu dessen herstellung | |
DE69833756D1 (de) | Elektronisches bauelement und verfahren zu seiner herstellung |