DE60144546D1 - Saphirsubstrat, elektronisches Bauelement und Verfahren zu dessen Herstellung - Google Patents

Saphirsubstrat, elektronisches Bauelement und Verfahren zu dessen Herstellung

Info

Publication number
DE60144546D1
DE60144546D1 DE60144546T DE60144546T DE60144546D1 DE 60144546 D1 DE60144546 D1 DE 60144546D1 DE 60144546 T DE60144546 T DE 60144546T DE 60144546 T DE60144546 T DE 60144546T DE 60144546 D1 DE60144546 D1 DE 60144546D1
Authority
DE
Germany
Prior art keywords
making
same
electronic component
sapphire substrate
sapphire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60144546T
Other languages
English (en)
Inventor
Takashi Matsuoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Application granted granted Critical
Publication of DE60144546D1 publication Critical patent/DE60144546D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/938—Lattice strain control or utilization

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE60144546T 2000-08-14 2001-08-14 Saphirsubstrat, elektronisches Bauelement und Verfahren zu dessen Herstellung Expired - Lifetime DE60144546D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000245626 2000-08-14

Publications (1)

Publication Number Publication Date
DE60144546D1 true DE60144546D1 (de) 2011-06-16

Family

ID=18736114

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60144546T Expired - Lifetime DE60144546D1 (de) 2000-08-14 2001-08-14 Saphirsubstrat, elektronisches Bauelement und Verfahren zu dessen Herstellung

Country Status (3)

Country Link
US (1) US6586819B2 (de)
EP (1) EP1182697B1 (de)
DE (1) DE60144546D1 (de)

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JP4055503B2 (ja) 2001-07-24 2008-03-05 日亜化学工業株式会社 半導体発光素子
WO2003089696A1 (en) * 2002-04-15 2003-10-30 The Regents Of The University Of California Dislocation reduction in non-polar gallium nitride thin films
US8809867B2 (en) * 2002-04-15 2014-08-19 The Regents Of The University Of California Dislocation reduction in non-polar III-nitride thin films
US6835957B2 (en) * 2002-07-30 2004-12-28 Lumileds Lighting U.S., Llc III-nitride light emitting device with p-type active layer
FR2853141A1 (fr) * 2003-03-26 2004-10-01 Kyocera Corp Appareil a semi-conducteur, procede pour faire croitre un semi-conducteur a nitrure et procede de production d'un appareil a semi-conducteur
JP4218597B2 (ja) * 2003-08-08 2009-02-04 住友電気工業株式会社 半導体発光素子の製造方法
KR100576850B1 (ko) * 2003-10-28 2006-05-10 삼성전기주식회사 질화물 반도체 발광소자 제조방법
GB2407700A (en) * 2003-10-28 2005-05-04 Sharp Kk MBE growth of nitride semiconductor lasers
US7323256B2 (en) 2003-11-13 2008-01-29 Cree, Inc. Large area, uniformly low dislocation density GaN substrate and process for making the same
US7087965B2 (en) * 2004-04-22 2006-08-08 International Business Machines Corporation Strained silicon CMOS on hybrid crystal orientations
KR101145755B1 (ko) * 2005-03-10 2012-05-16 재팬 사이언스 앤드 테크놀로지 에이젼시 평면의 반극성 갈륨 질화물의 성장을 위한 기술
DE102005021099A1 (de) * 2005-05-06 2006-12-07 Universität Ulm GaN-Schichten
JP5236148B2 (ja) 2005-05-12 2013-07-17 日本碍子株式会社 エピタキシャル基板、半導体素子、エピタキシャル基板の製造方法、半導体素子の製造方法、およびｉｉｉ族窒化物結晶における転位偏在化方法
JP5743127B2 (ja) 2005-06-01 2015-07-01 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 半極性（Ｇａ，Ａｌ，Ｉｎ，Ｂ）Ｎ薄膜、ヘテロ構造およびデバイスの成長と作製のための方法及び装置
WO2007008394A1 (en) * 2005-07-11 2007-01-18 Cree, Inc. Laser diode orientation on mis-cut substrates
US7691658B2 (en) 2006-01-20 2010-04-06 The Regents Of The University Of California Method for improved growth of semipolar (Al,In,Ga,B)N
US8421119B2 (en) * 2006-09-13 2013-04-16 Rohm Co., Ltd. GaN related compound semiconductor element and process for producing the same and device having the same
WO2008047907A1 (fr) * 2006-10-20 2008-04-24 Panasonic Electric Works Co., Ltd. Substrat de saphir, élément luminescent à semi-conducteur nitrure utilisant le substrat de saphir, et procédé destiné à fabriquer l'élément luminescent à semi-conducteur nitrure
JP5109333B2 (ja) * 2006-10-26 2012-12-26 サンケン電気株式会社 電源装置
TWI533351B (zh) * 2006-12-11 2016-05-11 美國加利福尼亞大學董事會 高效能非極性第三族氮化物光學裝置之金屬有機化學氣相沈積生長
CN102569557A (zh) * 2007-07-17 2012-07-11 住友电气工业株式会社 电子器件的制作方法、外延衬底的制作方法、iii族氮化物半导体元件及氮化镓外延衬底
US20090310640A1 (en) * 2008-04-04 2009-12-17 The Regents Of The University Of California MOCVD GROWTH TECHNIQUE FOR PLANAR SEMIPOLAR (Al, In, Ga, B)N BASED LIGHT EMITTING DIODES
JP2009272380A (ja) * 2008-05-01 2009-11-19 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物結晶およびその表面処理方法、ｉｉｉ族窒化物積層体およびその製造方法、ならびにｉｉｉ族窒化物半導体デバイスおよびその製造方法
JP2010016092A (ja) * 2008-07-02 2010-01-21 Sharp Corp 窒化物系半導体発光素子
CN102893374A (zh) * 2010-02-10 2013-01-23 八百隆文 结构体、及半导体基板的制造方法
EP2541624A4 (de) * 2010-04-01 2013-05-15 Panasonic Corp Nitridhalbleiterelement und herstellungsverfahren dafür
US8729486B2 (en) * 2010-06-23 2014-05-20 The Board Of Trustees Of The Leland Stanford Junior University MODFET active pixel X-ray detector
US10052848B2 (en) 2012-03-06 2018-08-21 Apple Inc. Sapphire laminates
JP5874495B2 (ja) * 2012-03-29 2016-03-02 豊田合成株式会社 Ｇａを含むＩＩＩ族窒化物半導体の製造方法
US9221289B2 (en) 2012-07-27 2015-12-29 Apple Inc. Sapphire window
JP5343224B1 (ja) * 2012-09-28 2013-11-13 Ｒｏｃａ株式会社 半導体装置および結晶
US9232672B2 (en) 2013-01-10 2016-01-05 Apple Inc. Ceramic insert control mechanism
US9252324B2 (en) 2013-05-30 2016-02-02 Globalfoundries Inc Heterojunction light emitting diode
US9632537B2 (en) 2013-09-23 2017-04-25 Apple Inc. Electronic component embedded in ceramic material
US9678540B2 (en) 2013-09-23 2017-06-13 Apple Inc. Electronic component embedded in ceramic material
US9154678B2 (en) 2013-12-11 2015-10-06 Apple Inc. Cover glass arrangement for an electronic device
US9225056B2 (en) 2014-02-12 2015-12-29 Apple Inc. Antenna on sapphire structure
US9553181B2 (en) 2015-06-01 2017-01-24 Toshiba Corporation Crystalline-amorphous transition material for semiconductor devices and method for formation
US10406634B2 (en) 2015-07-01 2019-09-10 Apple Inc. Enhancing strength in laser cutting of ceramic components
JP6306677B1 (ja) * 2016-12-19 2018-04-04 古河機械金属株式会社 Ｉｉｉ族窒化物半導体基板、及び、ｉｉｉ族窒化物半導体基板の製造方法

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US6265089B1 (en) * 1999-07-15 2001-07-24 The United States Of America As Represented By The Secretary Of The Navy Electronic devices grown on off-axis sapphire substrate

Also Published As

Publication number Publication date
US6586819B2 (en) 2003-07-01
EP1182697A3 (de) 2006-06-28
EP1182697B1 (de) 2011-05-04
EP1182697A2 (de) 2002-02-27
US20020033521A1 (en) 2002-03-21

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