DE602004021682D1 - Durch verwendung von mehrschichtigen organischen lnte - Google Patents
Durch verwendung von mehrschichtigen organischen lnteInfo
- Publication number
- DE602004021682D1 DE602004021682D1 DE602004021682T DE602004021682T DE602004021682D1 DE 602004021682 D1 DE602004021682 D1 DE 602004021682D1 DE 602004021682 T DE602004021682 T DE 602004021682T DE 602004021682 T DE602004021682 T DE 602004021682T DE 602004021682 D1 DE602004021682 D1 DE 602004021682D1
- Authority
- DE
- Germany
- Prior art keywords
- bga
- smd
- csp
- passive device
- passive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000000919 ceramic Substances 0.000 abstract 1
- 239000011368 organic material Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/201—Filters for transverse electromagnetic waves
- H01P1/203—Strip line filters
- H01P1/20327—Electromagnetic interstage coupling
- H01P1/20354—Non-comb or non-interdigital filters
- H01P1/20381—Special shape resonators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/201—Filters for transverse electromagnetic waves
- H01P1/203—Strip line filters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/02—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets
- H01F41/04—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets for manufacturing coils
- H01F41/041—Printed circuit coils
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4857—Multilayer substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0652—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next and on each other, i.e. mixed assemblies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/201—Filters for transverse electromagnetic waves
- H01P1/205—Comb or interdigital filters; Cascaded coaxial cavities
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/01—Frequency selective two-port networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/38—Impedance-matching networks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F17/00—Fixed inductances of the signal type
- H01F17/0006—Printed inductances
- H01F17/0033—Printed inductances with the coil helically wound around a magnetic core
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/402,313 US6900708B2 (en) | 2002-06-26 | 2003-03-28 | Integrated passive devices fabricated utilizing multi-layer, organic laminates |
| PCT/US2004/009486 WO2004093238A1 (en) | 2003-03-28 | 2004-03-29 | Integrated passive devices fabricated utilizing multi-layer, organic laminates |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE602004021682D1 true DE602004021682D1 (de) | 2009-08-06 |
Family
ID=33298255
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE602004021682T Expired - Lifetime DE602004021682D1 (de) | 2003-03-28 | 2004-03-29 | Durch verwendung von mehrschichtigen organischen lnte |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US6900708B2 (de) |
| EP (1) | EP1614184B1 (de) |
| JP (1) | JP4430667B2 (de) |
| KR (1) | KR101079347B1 (de) |
| AT (1) | ATE434840T1 (de) |
| DE (1) | DE602004021682D1 (de) |
| WO (1) | WO2004093238A1 (de) |
Families Citing this family (105)
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| US6900708B2 (en) * | 2002-06-26 | 2005-05-31 | Georgia Tech Research Corporation | Integrated passive devices fabricated utilizing multi-layer, organic laminates |
| US7557433B2 (en) | 2004-10-25 | 2009-07-07 | Mccain Joseph H | Microelectronic device with integrated energy source |
| CA2548985A1 (en) * | 2003-12-15 | 2005-06-30 | Geneohm Sciences, Inc. | Carbon electrode surface for attachment of dna and protein molecules |
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| JP2007523574A (ja) * | 2004-02-23 | 2007-08-16 | ジョージア テック リサーチ コーポレイション | 液晶性ポリマー及び多層ポリマーベースの無線周波／無線マルチバンド用途の受動信号処理コンポーネント |
| US8345433B2 (en) * | 2004-07-08 | 2013-01-01 | Avx Corporation | Heterogeneous organic laminate stack ups for high frequency applications |
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| DE102005037040A1 (de) * | 2005-08-05 | 2007-02-08 | Epcos Ag | Elektrisches Bauelement |
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| US8791006B2 (en) * | 2005-10-29 | 2014-07-29 | Stats Chippac, Ltd. | Semiconductor device and method of forming an inductor on polymer matrix composite substrate |
| US8669637B2 (en) * | 2005-10-29 | 2014-03-11 | Stats Chippac Ltd. | Integrated passive device system |
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| US8409970B2 (en) | 2005-10-29 | 2013-04-02 | Stats Chippac, Ltd. | Semiconductor device and method of making integrated passive devices |
| US7851257B2 (en) * | 2005-10-29 | 2010-12-14 | Stats Chippac Ltd. | Integrated circuit stacking system with integrated passive components |
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| JP4539870B2 (ja) * | 2006-03-31 | 2010-09-08 | Ｔｄｋ株式会社 | 薄膜デバイス |
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| US11563414B2 (en) | 2018-12-20 | 2023-01-24 | KYOCERA AVX Components Corporation | Multilayer electronic device including a capacitor having a precisely controlled capacitive area |
| WO2020132187A1 (en) | 2018-12-20 | 2020-06-25 | Avx Corporation | Multilayer electronic device including a high precision inductor |
| CN113228504A (zh) | 2018-12-20 | 2021-08-06 | 阿维科斯公司 | 高频多层滤波器 |
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| WO2020159810A1 (en) * | 2019-01-28 | 2020-08-06 | Avx Corporation | Multilayer ceramic capacitor having ultra-broadband performance |
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| US11495406B2 (en) | 2019-01-28 | 2022-11-08 | KYOCERA AVX Components Corporation | Multilayer ceramic capacitor having ultra-broadband performance |
| WO2020159807A1 (en) | 2019-01-28 | 2020-08-06 | Avx Corporation | Multilayer ceramic capacitor having ultra-broadband performance |
| US11705280B2 (en) | 2019-04-25 | 2023-07-18 | KYOCERA AVX Components Corporation | Multilayer capacitor having open mode electrode configuration and flexible terminations |
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- 2004-03-29 JP JP2006509404A patent/JP4430667B2/ja not_active Expired - Fee Related
- 2004-03-29 AT AT04759006T patent/ATE434840T1/de not_active IP Right Cessation
- 2004-03-29 EP EP04759006A patent/EP1614184B1/de not_active Expired - Lifetime
- 2004-03-29 DE DE602004021682T patent/DE602004021682D1/de not_active Expired - Lifetime
-
2005
- 2005-05-27 US US11/140,630 patent/US7068124B2/en not_active Expired - Lifetime
- 2005-09-28 KR KR1020057018385A patent/KR101079347B1/ko active IP Right Grant
Also Published As
| Publication number | Publication date |
|---|---|
| KR101079347B1 (ko) | 2011-11-04 |
| EP1614184A1 (de) | 2006-01-11 |
| JP2006521775A (ja) | 2006-09-21 |
| KR20060009827A (ko) | 2006-02-01 |
| US20050231304A1 (en) | 2005-10-20 |
| ATE434840T1 (de) | 2009-07-15 |
| WO2004093238A1 (en) | 2004-10-28 |
| US7068124B2 (en) | 2006-06-27 |
| EP1614184B1 (de) | 2009-06-24 |
| US6900708B2 (en) | 2005-05-31 |
| JP4430667B2 (ja) | 2010-03-10 |
| US20040000968A1 (en) | 2004-01-01 |
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