DE602004027509D1 - Bildaufnahmevorrichtung mit unterdrückung des dunkelstromes - Google Patents

Bildaufnahmevorrichtung mit unterdrückung des dunkelstromes

Info

Publication number
DE602004027509D1
DE602004027509D1 DE602004027509T DE602004027509T DE602004027509D1 DE 602004027509 D1 DE602004027509 D1 DE 602004027509D1 DE 602004027509 T DE602004027509 T DE 602004027509T DE 602004027509 T DE602004027509 T DE 602004027509T DE 602004027509 D1 DE602004027509 D1 DE 602004027509D1
Authority
DE
Germany
Prior art keywords
dark current
suppression
recording device
picture recording
photosensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602004027509T
Other languages
English (en)
Inventor
Chandra Mouli
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aptina Imaging Corp
Original Assignee
Aptina Imaging Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aptina Imaging Corp filed Critical Aptina Imaging Corp
Publication of DE602004027509D1 publication Critical patent/DE602004027509D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14609Pixel-elements with integrated switching, control, storage or amplification elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/1463Pixel isolation structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14683Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14689MOS based technologies
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/148Charge coupled imagers
DE602004027509T 2003-09-03 2004-09-01 Bildaufnahmevorrichtung mit unterdrückung des dunkelstromes Active DE602004027509D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/653,152 US7064406B2 (en) 2003-09-03 2003-09-03 Supression of dark current in a photosensor for imaging
PCT/US2004/028269 WO2005031874A1 (en) 2003-09-03 2004-09-01 Supression of dark current in a photosensor for imaging

Publications (1)

Publication Number Publication Date
DE602004027509D1 true DE602004027509D1 (de) 2010-07-15

Family

ID=34217835

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004027509T Active DE602004027509D1 (de) 2003-09-03 2004-09-01 Bildaufnahmevorrichtung mit unterdrückung des dunkelstromes

Country Status (9)

Country Link
US (4) US7064406B2 (de)
EP (2) EP2096674A1 (de)
JP (1) JP2007504666A (de)
KR (1) KR100794339B1 (de)
CN (1) CN100474598C (de)
AT (1) ATE470240T1 (de)
DE (1) DE602004027509D1 (de)
TW (1) TWI259591B (de)
WO (1) WO2005031874A1 (de)

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US7879638B2 (en) * 2007-03-02 2011-02-01 Aptina Imaging Corporation Backside illuminated imager and method of fabricating the same
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US7940315B2 (en) * 2008-01-07 2011-05-10 Aptina Imaging Corporation Method and apparatus for identification and correction of aberrant pixels in an image sensor
US8130289B2 (en) * 2008-09-25 2012-03-06 Aptima Imaging Corporation System, method, and apparatus for correction of dark current error in semiconductor imaging devices
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US20100148230A1 (en) * 2008-12-11 2010-06-17 Stevens Eric G Trench isolation regions in image sensors
US8138531B2 (en) * 2009-09-17 2012-03-20 International Business Machines Corporation Structures, design structures and methods of fabricating global shutter pixel sensor cells
JP5629450B2 (ja) * 2009-10-16 2014-11-19 キヤノン株式会社 半導体素子及び半導体素子の形成方法
US8946845B1 (en) * 2011-02-02 2015-02-03 Aptina Imaging Corporation Stacked pixels for high resolution CMOS image sensors with BCMD charge detectors
US8760543B2 (en) 2011-09-26 2014-06-24 Truesense Imaging, Inc. Dark reference in CCD image sensors
WO2013152031A1 (en) * 2012-04-04 2013-10-10 Kla-Tencor Corporation Protective fluorine-doped silicon oxide film for optical components
JP5985269B2 (ja) 2012-06-26 2016-09-06 ルネサスエレクトロニクス株式会社 半導体装置
US8907385B2 (en) * 2012-12-27 2014-12-09 Taiwan Semiconductor Manufacturing Company, Ltd. Surface treatment for BSI image sensors
KR102046761B1 (ko) * 2013-01-14 2019-12-02 삼성전자 주식회사 비휘발성 메모리 장치
CN105321974B (zh) * 2015-09-25 2018-04-03 上海华力微电子有限公司 通过f离子注入降低cmos图像传感器暗电流的方法
CN110676271B (zh) 2016-01-21 2022-11-18 索尼公司 光探测器件
JP6711005B2 (ja) * 2016-02-23 2020-06-17 株式会社リコー 画素ユニット、及び撮像素子
CN109216392A (zh) * 2018-09-12 2019-01-15 德淮半导体有限公司 图像传感器及其形成方法
CN110211985A (zh) * 2019-06-20 2019-09-06 德淮半导体有限公司 半导体衬底的修复方法
EP4128354A1 (de) * 2020-03-31 2023-02-08 National Research Council of Canada Nahbereichs-infrarot-bildgebungssysteme
CN113035895A (zh) * 2021-03-30 2021-06-25 上海华力微电子有限公司 图像传感器的制造方法

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Also Published As

Publication number Publication date
US20050045926A1 (en) 2005-03-03
US7776639B2 (en) 2010-08-17
US20070296004A1 (en) 2007-12-27
EP1661184A1 (de) 2006-05-31
US20050145902A1 (en) 2005-07-07
US7064406B2 (en) 2006-06-20
TW200520244A (en) 2005-06-16
EP1661184B1 (de) 2010-06-02
US7279395B2 (en) 2007-10-09
JP2007504666A (ja) 2007-03-01
US20090286348A1 (en) 2009-11-19
WO2005031874A1 (en) 2005-04-07
CN1875487A (zh) 2006-12-06
EP2096674A1 (de) 2009-09-02
KR100794339B1 (ko) 2008-01-15
CN100474598C (zh) 2009-04-01
ATE470240T1 (de) 2010-06-15
KR20060034734A (ko) 2006-04-24
US7576376B2 (en) 2009-08-18
TWI259591B (en) 2006-08-01

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