DE602004030054D1 - Untersuchungsvorrichtung für biologische Proben und chemische Proben - Google Patents

Untersuchungsvorrichtung für biologische Proben und chemische Proben

Info

Publication number
DE602004030054D1
DE602004030054D1 DE602004030054T DE602004030054T DE602004030054D1 DE 602004030054 D1 DE602004030054 D1 DE 602004030054D1 DE 602004030054 T DE602004030054 T DE 602004030054T DE 602004030054 T DE602004030054 T DE 602004030054T DE 602004030054 D1 DE602004030054 D1 DE 602004030054D1
Authority
DE
Germany
Prior art keywords
samples
chemical
testing biological
biological samples
testing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602004030054T
Other languages
English (en)
Inventor
Yoshiaki Yazawa
Kazuki Watanabe
Masao Kamahori
Yukinori Kunimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of DE602004030054D1 publication Critical patent/DE602004030054D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403Cells and electrode assemblies
    • G01N27/414Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403Cells and electrode assemblies
    • G01N27/414Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4148Integrated circuits therefor, e.g. fabricated by CMOS processing
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/671Organic radiation-sensitive molecular electronic devices
DE602004030054T 2004-01-21 2004-09-03 Untersuchungsvorrichtung für biologische Proben und chemische Proben Active DE602004030054D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004012596A JP4065855B2 (ja) 2004-01-21 2004-01-21 生体および化学試料検査装置

Publications (1)

Publication Number Publication Date
DE602004030054D1 true DE602004030054D1 (de) 2010-12-23

Family

ID=34631899

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004030054T Active DE602004030054D1 (de) 2004-01-21 2004-09-03 Untersuchungsvorrichtung für biologische Proben und chemische Proben

Country Status (5)

Country Link
US (2) US20050156207A1 (de)
EP (2) EP1950808B1 (de)
JP (1) JP4065855B2 (de)
DE (1) DE602004030054D1 (de)
TW (1) TW200525145A (de)

Families Citing this family (94)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1730506B1 (de) * 2004-04-02 2018-09-26 Silicon Laboratories Inc. Integrierter elektronischer sensor
WO2007036922A1 (en) * 2005-09-30 2007-04-05 Timothy Cummins An integrated electronic sensor
US8357958B2 (en) * 2004-04-02 2013-01-22 Silicon Laboratories Inc. Integrated CMOS porous sensor
US8536661B1 (en) 2004-06-25 2013-09-17 University Of Hawaii Biosensor chip sensor protection methods
US7785785B2 (en) 2004-11-12 2010-08-31 The Board Of Trustees Of The Leland Stanford Junior University Charge perturbation detection system for DNA and other molecules
JP4689244B2 (ja) * 2004-11-16 2011-05-25 ルネサスエレクトロニクス株式会社 半導体装置
JP2007142087A (ja) * 2005-11-17 2007-06-07 Nec Electronics Corp 半導体装置
WO2007087582A1 (en) 2006-01-24 2007-08-02 Invitrogen Corporation Device and methods for quantifying analytes
EP2021742A1 (de) * 2006-05-26 2009-02-11 Amersham Biosciences Corp. System und verfahren zum überwachen von parametern in containern
JP2008016502A (ja) * 2006-07-03 2008-01-24 Sharp Corp Rf集積回路及びその製造方法
WO2008007716A1 (en) * 2006-07-13 2008-01-17 National University Corporation Nagoya University Material detection device
US20080108164A1 (en) * 2006-11-06 2008-05-08 Oleynik Vladislav A Sensor System and Method
DE102006052863B4 (de) 2006-11-09 2018-03-01 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Schutzstruktur für Halbleitersensoren und deren Verwendung
JP4751302B2 (ja) * 2006-11-21 2011-08-17 株式会社日立製作所 電位差式センサ及び分析用素子
US8349167B2 (en) 2006-12-14 2013-01-08 Life Technologies Corporation Methods and apparatus for detecting molecular interactions using FET arrays
US11339430B2 (en) 2007-07-10 2022-05-24 Life Technologies Corporation Methods and apparatus for measuring analytes using large scale FET arrays
US8262900B2 (en) 2006-12-14 2012-09-11 Life Technologies Corporation Methods and apparatus for measuring analytes using large scale FET arrays
EP2677309B9 (de) 2006-12-14 2014-11-19 Life Technologies Corporation Verfahren zur Sequenzierung einer Nukleinsäure mittels grosser FET-Arrays, geeignet zur Messung in einem begrenzten pH-Bereich
JP5040409B2 (ja) * 2007-04-12 2012-10-03 富士ゼロックス株式会社 センサーチップ及び検査装置
EP2140256B1 (de) * 2007-04-27 2012-06-20 Nxp B.V. Biosensorchip
US8093689B2 (en) * 2007-07-02 2012-01-10 Infineon Technologies Ag Attachment member for semiconductor sensor device
US9551026B2 (en) 2007-12-03 2017-01-24 Complete Genomincs, Inc. Method for nucleic acid detection using voltage enhancement
CN102203282B (zh) 2008-06-25 2014-04-30 生命技术公司 使用大规模fet阵列测量分析物的方法和装置
US20110100810A1 (en) * 2008-06-30 2011-05-05 Nxp B.V. Chip integrated ion sensor
US20100137143A1 (en) 2008-10-22 2010-06-03 Ion Torrent Systems Incorporated Methods and apparatus for measuring analytes
US20100301398A1 (en) 2009-05-29 2010-12-02 Ion Torrent Systems Incorporated Methods and apparatus for measuring analytes
JP2012506557A (ja) * 2008-10-22 2012-03-15 ライフ テクノロジーズ コーポレーション 生物学的および化学的分析のための集積センサアレイ
FR2938703B1 (fr) 2008-11-20 2011-04-22 Commissariat Energie Atomique Procede de realisation d'une puce de detection d'elements biologiques
US8673627B2 (en) 2009-05-29 2014-03-18 Life Technologies Corporation Apparatus and methods for performing electrochemical reactions
US8776573B2 (en) 2009-05-29 2014-07-15 Life Technologies Corporation Methods and apparatus for measuring analytes
US20120261274A1 (en) 2009-05-29 2012-10-18 Life Technologies Corporation Methods and apparatus for measuring analytes
EP2336757B1 (de) 2009-12-07 2018-09-19 ams international AG Integrierte Schaltung mit Anordnung zur Erkennung der Anwesenheit von Wasser und Verfahren zu deren Herstellung
JP5517125B2 (ja) * 2010-02-05 2014-06-11 国立大学法人 東京大学 細胞測定装置
CN103154718B (zh) 2010-06-30 2015-09-23 生命科技公司 感测离子的电荷堆积电路和方法
WO2012003380A2 (en) 2010-06-30 2012-01-05 Life Technologies Corporation Array column integrator
TWI539172B (zh) 2010-06-30 2016-06-21 生命技術公司 用於測試離子感測場效電晶體(isfet)陣列之裝置及方法
US11307166B2 (en) 2010-07-01 2022-04-19 Life Technologies Corporation Column ADC
TWI527245B (zh) 2010-07-03 2016-03-21 生命技術公司 具有微摻雜汲極之化學感測器
JP5447858B2 (ja) * 2010-08-27 2014-03-19 大日本印刷株式会社 カレントミラー型バイオセンサ
EP2617061B1 (de) 2010-09-15 2021-06-30 Life Technologies Corporation Verfahren und vorrichtung zur analytmessung
US8796036B2 (en) 2010-09-24 2014-08-05 Life Technologies Corporation Method and system for delta double sampling
TWI432724B (zh) * 2010-10-18 2014-04-01 Ind Tech Res Inst 血液分析微系統
CN102466652A (zh) * 2010-11-19 2012-05-23 财团法人工业技术研究院 血液分析微系统
TWI410627B (zh) * 2010-12-30 2013-10-01 Chang Jung Christian University An integrated circuit chip capable of sensing ion concentration
EP2527824B1 (de) * 2011-05-27 2016-05-04 ams international AG Integrierte Schaltung mit Feuchtigkeitssensor und Verfahren zur Herstellung solch einer integrierten Schaltung
US9164052B1 (en) 2011-09-30 2015-10-20 Silicon Laboratories Inc. Integrated gas sensor
US8691609B1 (en) 2011-09-30 2014-04-08 Silicon Laboratories Inc. Gas sensor materials and methods for preparation thereof
US8852513B1 (en) 2011-09-30 2014-10-07 Silicon Laboratories Inc. Systems and methods for packaging integrated circuit gas sensor systems
US8669131B1 (en) 2011-09-30 2014-03-11 Silicon Laboratories Inc. Methods and materials for forming gas sensor structures
US9459234B2 (en) 2011-10-31 2016-10-04 Taiwan Semiconductor Manufacturing Company, Ltd., (“TSMC”) CMOS compatible BioFET
US9689835B2 (en) 2011-10-31 2017-06-27 Taiwan Semiconductor Manufacturing Company, Ltd. Amplified dual-gate bio field effect transistor
US10837879B2 (en) 2011-11-02 2020-11-17 Complete Genomics, Inc. Treatment for stabilizing nucleic acid arrays
US9970984B2 (en) 2011-12-01 2018-05-15 Life Technologies Corporation Method and apparatus for identifying defects in a chemical sensor array
US8747748B2 (en) * 2012-01-19 2014-06-10 Life Technologies Corporation Chemical sensor with conductive cup-shaped sensor surface
US8821798B2 (en) 2012-01-19 2014-09-02 Life Technologies Corporation Titanium nitride as sensing layer for microwell structure
US8786331B2 (en) 2012-05-29 2014-07-22 Life Technologies Corporation System for reducing noise in a chemical sensor array
EP2677307B1 (de) * 2012-06-21 2016-05-11 Nxp B.V. Integrierte Schaltung mit Sensoren und Herstellungsverfahren
US9080968B2 (en) 2013-01-04 2015-07-14 Life Technologies Corporation Methods and systems for point of use removal of sacrificial material
US9841398B2 (en) 2013-01-08 2017-12-12 Life Technologies Corporation Methods for manufacturing well structures for low-noise chemical sensors
US8962366B2 (en) 2013-01-28 2015-02-24 Life Technologies Corporation Self-aligned well structures for low-noise chemical sensors
US8987067B2 (en) * 2013-03-01 2015-03-24 International Business Machines Corporation Segmented guard ring structures with electrically insulated gap structures and design structures thereof
US8963216B2 (en) 2013-03-13 2015-02-24 Life Technologies Corporation Chemical sensor with sidewall spacer sensor surface
US8841217B1 (en) 2013-03-13 2014-09-23 Life Technologies Corporation Chemical sensor with protruded sensor surface
US20140264468A1 (en) 2013-03-14 2014-09-18 Taiwan Semiconductor Manufacturing Company, Ltd. Biofet with increased sensing area
CN104049021B (zh) * 2013-03-14 2016-10-05 台湾积体电路制造股份有限公司 具有增大的感测面积的biofet
US9389199B2 (en) 2013-03-14 2016-07-12 Taiwan Semiconductor Manufacturing Company, Ltd. Backside sensing bioFET with enhanced performance
EP2972279B1 (de) 2013-03-15 2021-10-06 Life Technologies Corporation Chemischer sensor mit stetigen sensoroberflächen
CN105264366B (zh) 2013-03-15 2019-04-16 生命科技公司 具有一致传感器表面区域的化学传感器
US9116117B2 (en) 2013-03-15 2015-08-25 Life Technologies Corporation Chemical sensor with sidewall sensor surface
US9835585B2 (en) 2013-03-15 2017-12-05 Life Technologies Corporation Chemical sensor with protruded sensor surface
CN105051525B (zh) * 2013-03-15 2019-07-26 生命科技公司 具有薄导电元件的化学设备
JP6045436B2 (ja) 2013-05-02 2016-12-14 ルネサスエレクトロニクス株式会社 電子装置
US20140336063A1 (en) 2013-05-09 2014-11-13 Life Technologies Corporation Windowed Sequencing
US10458942B2 (en) 2013-06-10 2019-10-29 Life Technologies Corporation Chemical sensor array having multiple sensors per well
TWI647842B (zh) * 2013-08-22 2019-01-11 美商生命技術公司 具薄導電元件之化學裝置
US9023674B2 (en) * 2013-09-20 2015-05-05 Taiwan Semiconductor Manufacturing Company, Ltd. Biosensing well array with protective layer
TWI655429B (zh) * 2013-11-06 2019-04-01 美商生命技術公司 具固定感測器表面積之化學感測器及其製造方法
JP6385740B2 (ja) 2014-07-04 2018-09-05 ルネサスエレクトロニクス株式会社 電子装置およびその製造方法
JP6364315B2 (ja) 2014-07-04 2018-07-25 ルネサスエレクトロニクス株式会社 電子装置
US9830549B2 (en) * 2014-09-22 2017-11-28 Cosmonet Co., Ltd Data carrier and data carrier system
US9488615B2 (en) * 2014-12-17 2016-11-08 Taiwan Semiconductor Manufacturing Co., Ltd. Biosensor with a sensing surface on an interlayer dielectric
US10605767B2 (en) 2014-12-18 2020-03-31 Life Technologies Corporation High data rate integrated circuit with transmitter configuration
CN111505087A (zh) 2014-12-18 2020-08-07 生命科技公司 使用大规模 fet 阵列测量分析物的方法和装置
US10077472B2 (en) 2014-12-18 2018-09-18 Life Technologies Corporation High data rate integrated circuit with power management
JP6506592B2 (ja) * 2015-04-01 2019-04-24 日立オートモティブシステムズ株式会社 センサ装置
US10509008B2 (en) 2015-04-29 2019-12-17 Taiwan Semiconductor Manufacturing Co., Ltd. Biological device and biosensing method thereof
GB201512725D0 (en) 2015-07-20 2015-08-26 Life Technologies As Polymeric particles
JP6447925B2 (ja) 2015-12-15 2019-01-09 シャープ株式会社 イオン濃度センサ
US9659249B1 (en) * 2016-09-27 2017-05-23 International Business Machines Corporation Pre-programmed resistive cross-point array for neural network
JP2019056581A (ja) * 2017-09-20 2019-04-11 ソニーセミコンダクタソリューションズ株式会社 電荷検出センサおよび電位計測システム
JP7391382B2 (ja) 2018-05-31 2023-12-05 国立大学法人静岡大学 イオン濃度計測装置
US10502707B1 (en) 2018-05-31 2019-12-10 Taiwan Semiconductor Manufacturing Co., Ltd. Differential sensing with bioFET sensors
JP6644336B2 (ja) * 2018-08-06 2020-02-12 シャープ株式会社 イオン濃度センサ
CN112854617B (zh) * 2020-12-31 2022-08-30 淮南矿业集团兴科计量技术服务有限责任公司 一种卷材的防水层及基于该层的不透水实验方法

Family Cites Families (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4180771A (en) * 1977-12-02 1979-12-25 Airco, Inc. Chemical-sensitive field-effect transistor
US6747339B1 (en) * 1978-11-20 2004-06-08 Hitachi, Ltd. Integrated circuit having reduced soft errors and reduced penetration of alkali impurities into the substrate
JPS6224659A (ja) 1985-07-25 1987-02-02 Toshiba Corp 複合型接合コンデンサ
FR2591389B1 (fr) * 1985-12-05 1988-08-12 Elf Aquitaine Transistor a effet de champ selectif aux ions et procede de fabrication
JPS63195557A (ja) 1987-02-09 1988-08-12 Nippon Koden Corp イオンセンサ用電界効果トランジスタ
JP2610294B2 (ja) * 1988-03-31 1997-05-14 株式会社東芝 化学センサ
USRE34893E (en) * 1988-06-08 1995-04-04 Nippondenso Co., Ltd. Semiconductor pressure sensor and method of manufacturing same
US5607566A (en) * 1989-06-23 1997-03-04 The Board Of Regents Of The University Of Michigan Batch deposition of polymeric ion sensor membranes
JPH0333646A (ja) * 1989-06-30 1991-02-13 Hitachi Ltd 半導体化学センサ
JP3001104B2 (ja) * 1989-10-04 2000-01-24 オリンパス光学工業株式会社 センサー構造体及びその製造法
JP2526689B2 (ja) 1990-02-28 1996-08-21 日本電気株式会社 半導体センサおよびその駆動方法
US5436164A (en) 1990-11-15 1995-07-25 Hemlock Semi-Conductor Corporation Analytical method for particulate silicon
JPH06177233A (ja) 1992-12-02 1994-06-24 Hitachi Ltd 半導体集積回路装置およびその製造方法
JPH06177242A (ja) 1992-12-08 1994-06-24 Hitachi Ltd 半導体集積回路装置
DE4308081A1 (de) 1993-03-13 1994-09-22 Fraunhofer Ges Forschung Halbleiterbauelement, insbesondere zur Ionendetektion
JP3122558B2 (ja) 1993-07-19 2001-01-09 シャープ株式会社 多色発光ダイオードユニット
US5414284A (en) * 1994-01-19 1995-05-09 Baxter; Ronald D. ESD Protection of ISFET sensors
DE4430811C1 (de) * 1994-08-30 1995-09-07 Fraunhofer Ges Forschung Verfahren zum Herstellen eines integrierten ionensensitiven Feldeffekttransistors in CMOS-Silizium-Planartechnologie
JP2760335B2 (ja) * 1996-01-29 1998-05-28 日本電気株式会社 タンパク質センサ
DE19621996C2 (de) * 1996-05-31 1998-04-09 Siemens Ag Verfahren zur Herstellung einer Kombination eines Drucksensors und eines elektrochemischen Sensors
GB2321336B (en) * 1997-01-15 2001-07-25 Univ Warwick Gas-sensing semiconductor devices
US6388279B1 (en) * 1997-06-11 2002-05-14 Denso Corporation Semiconductor substrate manufacturing method, semiconductor pressure sensor and manufacturing method thereof
JPH11126819A (ja) 1997-06-20 1999-05-11 Nippon Steel Corp 半導体装置及びその製造方法
US6117643A (en) * 1997-11-25 2000-09-12 Ut Battelle, Llc Bioluminescent bioreporter integrated circuit
EP1042811B1 (de) * 1997-12-19 2008-07-23 Advanced Micro Devices, Inc. Silizium auf eine isolator-konfiguration welche mit der massen-cmos-architektur kompatibel ist
JP4183789B2 (ja) * 1998-01-14 2008-11-19 株式会社堀場製作所 物理現象および/または化学現象の検出装置
US6274887B1 (en) * 1998-11-02 2001-08-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method therefor
US6518594B1 (en) * 1998-11-16 2003-02-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor devices
JP4540146B2 (ja) * 1998-12-24 2010-09-08 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US6387724B1 (en) * 1999-02-26 2002-05-14 Dynamics Research Corporation Method of fabricating silicon-on-insulator sensor having silicon oxide sensing surface
US6661096B1 (en) * 1999-06-29 2003-12-09 Semiconductor Energy Laboratory Co., Ltd. Wiring material semiconductor device provided with a wiring using the wiring material and method of manufacturing thereof
ATE344535T1 (de) * 1999-07-06 2006-11-15 Elmos Semiconductor Ag Cmos kompatibler soi-prozess
JP4554011B2 (ja) * 1999-08-10 2010-09-29 ルネサスエレクトロニクス株式会社 半導体集積回路装置の製造方法
JP3810246B2 (ja) * 2000-03-15 2006-08-16 株式会社ルネサステクノロジ 半導体装置および半導体装置の製造方法
JP4776755B2 (ja) * 2000-06-08 2011-09-21 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP3839224B2 (ja) 2000-06-29 2006-11-01 株式会社山武 集積化センサ素子及びこれを用いた計測システム
US6429502B1 (en) * 2000-08-22 2002-08-06 Silicon Wave, Inc. Multi-chambered trench isolated guard ring region for providing RF isolation
JP4183375B2 (ja) * 2000-10-04 2008-11-19 沖電気工業株式会社 半導体装置及びその製造方法
JP3415581B2 (ja) * 2000-11-29 2003-06-09 Necエレクトロニクス株式会社 半導体装置
JP3704072B2 (ja) * 2001-09-05 2005-10-05 株式会社東芝 半導体装置及びその製造方法
JP2003158198A (ja) * 2001-09-07 2003-05-30 Seiko Instruments Inc 相補型mos半導体装置
TW510019B (en) * 2001-11-19 2002-11-11 Nanya Technology Corp Fuse structure
JP2004012596A (ja) 2002-06-04 2004-01-15 Ricoh Co Ltd 光走査装置及び画像形成装置
JP4092990B2 (ja) * 2002-09-06 2008-05-28 株式会社日立製作所 生体および化学試料検査装置
TW564476B (en) * 2002-10-21 2003-12-01 Univ Chung Yuan Christian Method for fabricating a monolithic chip including pH, temperature and photo intensity multi-sensors and a readout circuit
JP4502173B2 (ja) * 2003-02-03 2010-07-14 ルネサスエレクトロニクス株式会社 半導体装置及びその製造方法
US7361946B2 (en) * 2004-06-28 2008-04-22 Nitronex Corporation Semiconductor device-based sensors

Also Published As

Publication number Publication date
US7888708B2 (en) 2011-02-15
EP1950808B1 (de) 2010-11-10
EP1950808A3 (de) 2008-09-17
EP1557884A3 (de) 2008-06-25
EP1557884A2 (de) 2005-07-27
JP2005207797A (ja) 2005-08-04
TWI345057B (de) 2011-07-11
US20050156207A1 (en) 2005-07-21
JP4065855B2 (ja) 2008-03-26
EP1950808A2 (de) 2008-07-30
TW200525145A (en) 2005-08-01
US20080061323A1 (en) 2008-03-13

Similar Documents

Publication Publication Date Title
DE602004030054D1 (de) Untersuchungsvorrichtung für biologische Proben und chemische Proben
EP1848999A4 (de) Testvorrichtung für stuhlproben und verwendungsverfahren dafür
GB0501826D0 (en) Apparatus for measurement of analyte concentration
EP1873533A4 (de) Testchip zur probenanalyse und mikroanalysesystem
DE602006019198D1 (de) Probe- und haltevorrichtung
HK1162898A1 (zh) 將數據輸入分析物測試裝置的方法
EP1775574A4 (de) Verfahren zur autodiskriminierung einer testprobe
WO2008039946A3 (en) Integrated meter for analyzing biological samples
HK1137813A1 (en) Portable apparatus for improved sample analysis
BRPI0821148A2 (pt) Dispositivo e método para análise microbiológica de amostras biológicas
EP1867997A4 (de) Präparatanalyseverfahren und präparatanalysevorrichtung
EP2061599A4 (de) Verfahren zum prüfen einer flüssigkeitsprobe, testeinheit und automatisiertes system aus mehreren testeinheiten
ZA200810188B (en) Device and method for chemical, biochemical, biological and physical analysis, reaction, assay and more
DK2620510T4 (da) Enkeltmolekyle-arrays til genetisk og kemisk analyse
DE602005013583D1 (de) Testgerät und Testverfahren
EP1849001A4 (de) Seitenstrom-testsatz und verfahren zum nachweis eines analyten
DE602005006378D1 (de) Anschlusselemente für eine automatische Testeinrichtung zur Prüfung von integrierten Schaltungen
EP1870714A4 (de) Mikrostruktur-sondenkarte und mikrostruktur-untersuchungseinrichtung, verfahren und computerprogramm
GB0503629D0 (en) Method and apparatus for automated analysis of biological specimen
DE602005013033D1 (de) Konzentrations-Überwachungsvorrichtung für Stickstoffverbindungen enthaltende Flüssigproben
GB0306098D0 (en) Sample testing device
DE602005023770D1 (de) Testeinrichtung und testverfahren
DE112007000683A5 (de) Vorrichtung zur Durchführung und Untersuchung biologischer Proben mit temperaturgesteuerten biologischen Reaktionen
WO2007114986A3 (en) Cooperative probes and methods of using them
GB2422795B (en) Apparatus for processing biological sample