Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
  • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
  • H01L21/76—Making of isolation regions between components
  • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
  • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
  • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
  • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
  • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
  • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
  • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
  • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
  • H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
  • H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer

Applications Claiming Priority (2)

Publications (1)

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Country Status (9)

Families Citing this family (386)

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• 2004
  • 2004-02-12 US US10/779,582 patent/US7176528B2/en not_active Expired - Lifetime
  • 2004-02-17 KR KR1020107011445A patent/KR101026896B1/ko active IP Right Grant
  • 2004-02-17 KR KR1020057015123A patent/KR100922018B1/ko active IP Right Grant
  • 2004-02-17 EP EP04809284A patent/EP1599901B1/de not_active Expired - Fee Related
  • 2004-02-17 JP JP2006508760A patent/JP5152819B2/ja not_active Expired - Fee Related
  • 2004-02-17 EP EP09164795A patent/EP2104132A3/de not_active Ceased
  • 2004-02-17 EP EP09164802A patent/EP2104137A3/de not_active Ceased
  • 2004-02-17 KR KR1020107024019A patent/KR101103947B1/ko active IP Right Grant
  • 2004-02-17 CN CNB2004800044432A patent/CN100373586C/zh not_active Expired - Fee Related
  • 2004-02-17 KR KR1020087015469A patent/KR101030631B1/ko active IP Right Grant
  • 2004-02-17 DE DE602004030223T patent/DE602004030223D1/de not_active Expired - Lifetime
  • 2004-02-17 EP EP09164799A patent/EP2104133A3/de not_active Withdrawn
  • 2004-02-17 KR KR1020097010081A patent/KR100997597B1/ko not_active IP Right Cessation
  • 2004-02-17 WO PCT/US2004/004746 patent/WO2005029576A2/en active Application Filing
  • 2004-02-17 SG SG200607580-8A patent/SG154331A1/en unknown
  • 2004-06-06 TW TW093104078A patent/TWI323485B/zh not_active IP Right Cessation
• 2005
  • 2005-07-08 US US11/177,772 patent/US7192844B2/en not_active Expired - Fee Related
• 2007
  • 2007-01-05 US US11/650,270 patent/US7476940B2/en not_active Expired - Fee Related
• 2008
  • 2008-04-09 US US12/082,211 patent/US7605053B2/en not_active Expired - Fee Related
  • 2008-12-04 US US12/328,030 patent/US7838935B2/en not_active Expired - Fee Related
• 2012
  • 2012-07-02 JP JP2012148604A patent/JP2012231161A/ja active Pending
  • 2012-07-02 JP JP2012148605A patent/JP2012212924A/ja active Pending

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