DE602005006967D1 - Analyse-System und Teilchenstrahlgerät - Google Patents
Analyse-System und TeilchenstrahlgerätInfo
- Publication number
- DE602005006967D1 DE602005006967D1 DE602005006967T DE602005006967T DE602005006967D1 DE 602005006967 D1 DE602005006967 D1 DE 602005006967D1 DE 602005006967 T DE602005006967 T DE 602005006967T DE 602005006967 T DE602005006967 T DE 602005006967T DE 602005006967 D1 DE602005006967 D1 DE 602005006967D1
- Authority
- DE
- Germany
- Prior art keywords
- analysis system
- particle beam
- beam device
- particle
- analysis
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/05—Electron or ion-optical arrangements for separating electrons or ions according to their energy or mass
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/302—Contactless testing
- G01R31/305—Contactless testing using electron beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/244—Detectors; Associated components or circuits therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J49/00—Particle spectrometers or separator tubes
- H01J49/44—Energy spectrometers, e.g. alpha-, beta-spectrometers
- H01J49/46—Static spectrometers
- H01J49/48—Static spectrometers using electrostatic analysers, e.g. cylindrical sector, Wien filter
- H01J49/488—Static spectrometers using electrostatic analysers, e.g. cylindrical sector, Wien filter with retarding grids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/244—Detection characterized by the detecting means
- H01J2237/2446—Position sensitive detectors
- H01J2237/24465—Sectored detectors, e.g. quadrants
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/244—Detection characterized by the detecting means
- H01J2237/24475—Scattered electron detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/244—Detection characterized by the detecting means
- H01J2237/2448—Secondary particle detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/26—Electron or ion microscopes
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP05005886A EP1703537B9 (de) | 2005-03-17 | 2005-03-17 | Analyse-System und Teilchenstrahlgerät |
Publications (1)
Publication Number | Publication Date |
---|---|
DE602005006967D1 true DE602005006967D1 (de) | 2008-07-03 |
Family
ID=35509284
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602005006967T Active DE602005006967D1 (de) | 2005-03-17 | 2005-03-17 | Analyse-System und Teilchenstrahlgerät |
Country Status (6)
Country | Link |
---|---|
US (1) | US7439500B2 (de) |
EP (1) | EP1703537B9 (de) |
JP (1) | JP4523558B2 (de) |
KR (1) | KR100776067B1 (de) |
DE (1) | DE602005006967D1 (de) |
TW (1) | TWI330861B (de) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008101714A2 (en) * | 2007-02-22 | 2008-08-28 | Applied Materials Israel, Ltd. | High throughput sem tool |
EP2132763B1 (de) * | 2007-02-22 | 2014-05-07 | Applied Materials Israel Ltd. | Sem-werkzeug mit hohem durchsatz |
EP2051278B1 (de) * | 2007-10-17 | 2011-09-07 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Energiefilter für eine Elektronenstrahlvorrichtung mit kalter Feldemission |
US7838833B1 (en) * | 2007-11-30 | 2010-11-23 | Kla-Tencor Technologies Corporation | Apparatus and method for e-beam dark imaging with perspective control |
TWI479570B (zh) | 2007-12-26 | 2015-04-01 | Nawotec Gmbh | 從樣本移除材料之方法及系統 |
EP2219204B1 (de) | 2009-02-12 | 2012-03-21 | ICT, Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Anordnung und Verfahren zur Kontrastverbesserung in einer Vorrichtung mit geladenem Partikelstrahl zur Inspektion eines Probestücks |
EP2441083B1 (de) | 2009-06-12 | 2021-03-31 | Carl Zeiss Microscopy, LLC | Verfahren und system zur erhitzung des spitzenapex einer quelle für geladene partikel |
JP5694317B2 (ja) * | 2009-07-17 | 2015-04-01 | ケーエルエー−テンカー・コーポレーションKla−Tencor Corporation | 荷電粒子エネルギー分析器装置および方法 |
CN103069536B (zh) * | 2010-04-09 | 2016-04-06 | 卡尔蔡司Smt有限责任公司 | 带电粒子探测系统和多小波束检查系统 |
DE102010061178A1 (de) * | 2010-12-13 | 2012-06-14 | Gsi Helmholtzzentrum Für Schwerionenforschung Gmbh | Chromatischer Energiefilter |
JP5638606B2 (ja) * | 2010-12-27 | 2014-12-10 | 住友重機械工業株式会社 | エネルギーデグレーダ、及びそれを備えた荷電粒子照射システム |
EP2511939B1 (de) * | 2011-04-13 | 2016-03-23 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Anordnung und Verfahren zur Kontrastverbesserung in einem Teilchenstrahlapparat zur Inspektion eines Probestücks |
JP5663412B2 (ja) | 2011-06-16 | 2015-02-04 | 株式会社日立ハイテクノロジーズ | 荷電粒子線装置 |
WO2013062158A1 (ko) * | 2011-10-27 | 2013-05-02 | 에스엔유 프리시젼 주식회사 | 주사전자현미경용 빈필터 제어방법 및 전자빔 정렬 기능을 구비한 주사전자현미경 |
EP2629317B1 (de) * | 2012-02-20 | 2015-01-28 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Teilchenstrahlvorrichtung mit dynamischem Fokus und Verfahren zu deren Betrieb |
EP2654069B1 (de) * | 2012-04-16 | 2016-02-24 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Mehrkanaldetektor, Optik dafür und Betriebsverfahren dafür |
EP2682978B1 (de) * | 2012-07-05 | 2016-10-19 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Verunreinigungsverringerungselektrode für Partikeldetektor |
EP2747121A1 (de) * | 2012-12-21 | 2014-06-25 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Sekundärelektronenoptik und -detektionsvorrichtung |
JP6216515B2 (ja) * | 2013-01-30 | 2017-10-18 | 株式会社日立ハイテクノロジーズ | 電子ビーム装置、及び電子ビーム観察方法 |
US8933414B2 (en) * | 2013-02-27 | 2015-01-13 | Fei Company | Focused ion beam low kV enhancement |
WO2015029201A1 (ja) * | 2013-08-30 | 2015-03-05 | 株式会社日立製作所 | スピン検出器、及び荷電粒子線装置および光電子分光装置 |
EP2879155B1 (de) * | 2013-12-02 | 2018-04-25 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Mehrstrahlsystem mit Hochdurchsatz-EBI |
JP5899299B2 (ja) * | 2014-12-05 | 2016-04-06 | 株式会社日立ハイテクノロジーズ | 荷電粒子線装置 |
SG11201707201SA (en) * | 2015-03-24 | 2017-10-30 | Kla Tencor Corp | Method and system for charged particle microscopy with improved image beam stabilization and interrogation |
US10192716B2 (en) * | 2015-09-21 | 2019-01-29 | Kla-Tencor Corporation | Multi-beam dark field imaging |
JP6882972B2 (ja) * | 2017-10-24 | 2021-06-02 | 株式会社日立ハイテク | 荷電粒子線装置、断面形状推定プログラム |
US20200303156A1 (en) * | 2019-03-20 | 2020-09-24 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Beam splitter for a charged particle device |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1128107A (en) * | 1965-06-23 | 1968-09-25 | Hitachi Ltd | Scanning electron microscope |
GB8327737D0 (en) * | 1983-10-17 | 1983-11-16 | Texas Instruments Ltd | Electron detector |
NL8602177A (nl) * | 1986-08-27 | 1988-03-16 | Philips Nv | Electronen detectie met energie discriminatie. |
DE3888712D1 (de) * | 1987-02-02 | 1994-05-05 | Integrated Circuit Testing | Detektorobjectiv für Rastermikroskope. |
JPH071686B2 (ja) * | 1988-09-22 | 1995-01-11 | 株式会社日立製作所 | イオンマイクロアナライザ |
DE3941178A1 (de) * | 1989-12-13 | 1991-06-20 | Siemens Ag | Verfahren zur quantitativen potentialmessung mit einer korpuskularsonde |
US5146090A (en) * | 1990-06-11 | 1992-09-08 | Siemens Aktiengesellschaft | Particle beam apparatus having an immersion lens arranged in an intermediate image of the beam |
GB2282480B (en) * | 1990-07-05 | 1995-07-26 | Olivetti Systems & Networks S | Integrated circuit structure analysis |
JPH0467550A (ja) * | 1990-07-05 | 1992-03-03 | Fujitsu Ltd | 電子ビーム装置及びその画像取得方法 |
JPH05251039A (ja) * | 1992-03-04 | 1993-09-28 | Ebara Corp | 二次イオン質量分析計 |
US5644132A (en) * | 1994-06-20 | 1997-07-01 | Opan Technologies Ltd. | System for high resolution imaging and measurement of topographic and material features on a specimen |
WO1996008835A1 (en) * | 1994-09-13 | 1996-03-21 | Metrologix, Inc. | Particle beam detector providing z-axis and topographic contrast |
US5894124A (en) * | 1995-03-17 | 1999-04-13 | Hitachi, Ltd. | Scanning electron microscope and its analogous device |
JP3434165B2 (ja) | 1997-04-18 | 2003-08-04 | 株式会社日立製作所 | 走査電子顕微鏡 |
JPH1167139A (ja) * | 1997-08-25 | 1999-03-09 | Hitachi Ltd | 走査電子顕微鏡 |
JP3661592B2 (ja) * | 1998-03-27 | 2005-06-15 | 株式会社日立製作所 | パターン検査装置 |
KR20000034962A (ko) * | 1998-11-19 | 2000-06-26 | 하이든 마틴 | 하전입자의 이중-모드 검출 장치 및 방법 |
JP3728956B2 (ja) * | 1998-12-22 | 2005-12-21 | 株式会社日立製作所 | 回路パターン検査装置 |
WO2001075929A1 (fr) * | 2000-03-31 | 2001-10-11 | Hitachi, Ltd. | Microscope electronique a balayage |
JP2001357808A (ja) * | 2000-06-14 | 2001-12-26 | Hitachi Ltd | 回路パターン検査装置および方法 |
US6888150B2 (en) * | 2001-12-13 | 2005-05-03 | Sony International (Europe) Gmbh | Method for defect and conductivity engineering of a conducting nanoscaled structure |
-
2005
- 2005-03-17 EP EP05005886A patent/EP1703537B9/de not_active Expired - Fee Related
- 2005-03-17 DE DE602005006967T patent/DE602005006967D1/de active Active
-
2006
- 2006-02-22 TW TW095106002A patent/TWI330861B/zh not_active IP Right Cessation
- 2006-03-02 JP JP2006056845A patent/JP4523558B2/ja not_active Expired - Fee Related
- 2006-03-11 KR KR1020060022889A patent/KR100776067B1/ko active IP Right Grant
- 2006-03-17 US US11/384,044 patent/US7439500B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
KR100776067B1 (ko) | 2007-11-15 |
JP4523558B2 (ja) | 2010-08-11 |
US20060226361A1 (en) | 2006-10-12 |
TW200634884A (en) | 2006-10-01 |
TWI330861B (en) | 2010-09-21 |
US7439500B2 (en) | 2008-10-21 |
KR20060101263A (ko) | 2006-09-22 |
JP2006261111A (ja) | 2006-09-28 |
EP1703537B9 (de) | 2008-10-22 |
EP1703537B1 (de) | 2008-05-21 |
EP1703537A1 (de) | 2006-09-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |