DE602005007563D1 - Lithografische Vorrichtung und Verfahren zur Herstellung einer Vorrichtung - Google Patents

Lithografische Vorrichtung und Verfahren zur Herstellung einer Vorrichtung

Info

Publication number
DE602005007563D1
DE602005007563D1 DE602005007563T DE602005007563T DE602005007563D1 DE 602005007563 D1 DE602005007563 D1 DE 602005007563D1 DE 602005007563 T DE602005007563 T DE 602005007563T DE 602005007563 T DE602005007563 T DE 602005007563T DE 602005007563 D1 DE602005007563 D1 DE 602005007563D1
Authority
DE
Germany
Prior art keywords
making
lithographic apparatus
lithographic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602005007563T
Other languages
English (en)
Inventor
Patricius A J Tinnemans
Johannes J M Baselmans
Laurentius C Jorritsma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASML Netherlands BV
Original Assignee
ASML Netherlands BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASML Netherlands BV filed Critical ASML Netherlands BV
Publication of DE602005007563D1 publication Critical patent/DE602005007563D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558Dose control, i.e. achievement of a desired dose
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70275Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70283Mask effects on the imaging process
    • G03F7/70291Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70466Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70475Stitching, i.e. connecting image fields to produce a device field, the field occupied by a device such as a memory chip, processor chip, CCD, flat panel display
DE602005007563T 2004-12-27 2005-12-15 Lithografische Vorrichtung und Verfahren zur Herstellung einer Vorrichtung Active DE602005007563D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/020,642 US7126672B2 (en) 2004-12-27 2004-12-27 Lithographic apparatus and device manufacturing method

Publications (1)

Publication Number Publication Date
DE602005007563D1 true DE602005007563D1 (de) 2008-07-31

Family

ID=35892520

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602005007563T Active DE602005007563D1 (de) 2004-12-27 2005-12-15 Lithografische Vorrichtung und Verfahren zur Herstellung einer Vorrichtung

Country Status (8)

Country Link
US (2) US7126672B2 (de)
EP (1) EP1674934B1 (de)
JP (1) JP4223036B2 (de)
KR (1) KR100734594B1 (de)
CN (1) CN100524030C (de)
DE (1) DE602005007563D1 (de)
SG (1) SG123688A1 (de)
TW (1) TW200629000A (de)

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US9188874B1 (en) 2011-05-09 2015-11-17 Kenneth C. Johnson Spot-array imaging system for maskless lithography and parallel confocal microscopy
US8994920B1 (en) 2010-05-07 2015-03-31 Kenneth C. Johnson Optical systems and methods for absorbance modulation
US9097983B2 (en) * 2011-05-09 2015-08-04 Kenneth C. Johnson Scanned-spot-array EUV lithography system
US7126672B2 (en) * 2004-12-27 2006-10-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7317510B2 (en) * 2004-12-27 2008-01-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
DE602006002044D1 (de) * 2005-02-23 2008-09-18 Asml Masktools Bv Methode und Apparat zur Optimierung der Beleuchtung einer Schicht eines vollständigen Chips
US7209275B2 (en) * 2005-06-30 2007-04-24 Asml Holding N.V. Method and system for maskless lithography real-time pattern rasterization and using computationally coupled mirrors to achieve optimum feature representation
DE102006019963B4 (de) * 2006-04-28 2023-12-07 Envisiontec Gmbh Vorrichtung und Verfahren zur Herstellung eines dreidimensionalen Objekts durch schichtweises Verfestigen eines unter Einwirkung von elektromagnetischer Strahlung verfestigbaren Materials mittels Maskenbelichtung
US7695950B2 (en) * 2006-05-17 2010-04-13 E. I. Du Pont De Nemours And Company Δ5 desaturase and its use in making polyunsaturated fatty acids
US7707538B2 (en) * 2007-06-15 2010-04-27 Brion Technologies, Inc. Multivariable solver for optical proximity correction
US20090199152A1 (en) * 2008-02-06 2009-08-06 Micronic Laser Systems Ab Methods and apparatuses for reducing mura effects in generated patterns
KR101680754B1 (ko) * 2010-02-18 2016-12-13 삼성디스플레이 주식회사 광학 헤드의 중첩 거리 결정 방법 및 이를 이용한 디지털 노광 장치
JP5709465B2 (ja) * 2010-10-29 2015-04-30 キヤノン株式会社 描画装置、および、物品の製造方法
US8660786B2 (en) * 2011-08-17 2014-02-25 Raytheon Company Positioning module
CN103946750B (zh) * 2011-11-29 2019-03-29 Asml荷兰有限公司 光刻设备、器件制造方法和计算机程序
NL2009817A (en) 2011-12-06 2013-06-10 Asml Netherlands Bv A lithography apparatus, an apparatus for providing setpoint data, a device manufacturing method, a method of calculating setpoint data and a computer program.
JP5905126B2 (ja) 2012-01-17 2016-04-20 エーエスエムエル ネザーランズ ビー.ブイ. リソグラフィ装置及びデバイス製造方法
US8584057B2 (en) * 2012-03-01 2013-11-12 Taiwan Semiconductor Manufacturing Copmany, Ltd. Non-directional dithering methods
KR102125088B1 (ko) 2012-03-26 2020-06-19 가부시키가이샤 니콘 패턴 형성 장치
WO2014140047A2 (en) * 2013-03-12 2014-09-18 Micronic Mydata AB Method and device for writing photomasks with reduced mura errors
US9754360B2 (en) 2014-12-22 2017-09-05 The Research Foundation For The State University Of New York Determination of spatial distribution of charged particle beams
JP6723564B2 (ja) * 2018-02-20 2020-07-15 株式会社ピーエムティー 露光方法
KR102637105B1 (ko) * 2018-07-13 2024-02-15 삼성전자주식회사 영상 데이터를 처리하는 방법 및 장치

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US5229872A (en) * 1992-01-21 1993-07-20 Hughes Aircraft Company Exposure device including an electrically aligned electronic mask for micropatterning
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US6177980B1 (en) * 1997-02-20 2001-01-23 Kenneth C. Johnson High-throughput, maskless lithography system
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JP3563384B2 (ja) * 2001-11-08 2004-09-08 大日本スクリーン製造株式会社 画像記録装置
KR100545297B1 (ko) 2002-06-12 2006-01-24 에이에스엠엘 네델란즈 비.브이. 리소그래피장치 및 디바이스 제조방법
US6870554B2 (en) * 2003-01-07 2005-03-22 Anvik Corporation Maskless lithography with multiplexed spatial light modulators
EP1482373A1 (de) * 2003-05-30 2004-12-01 ASML Netherlands B.V. Lithographischer Apparat und Verfahren zur Herstellung eines Artikels
SG125970A1 (en) * 2003-12-19 2006-10-30 Asml Masktools Bv Feature optimization using interference mapping lithography
US7317510B2 (en) * 2004-12-27 2008-01-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7126672B2 (en) 2004-12-27 2006-10-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method

Also Published As

Publication number Publication date
JP2006186364A (ja) 2006-07-13
EP1674934B1 (de) 2008-06-18
US20060139600A1 (en) 2006-06-29
KR100734594B1 (ko) 2007-07-02
KR20060074870A (ko) 2006-07-03
EP1674934A1 (de) 2006-06-28
JP4223036B2 (ja) 2009-02-12
US20070030470A1 (en) 2007-02-08
SG123688A1 (en) 2006-07-26
US7126672B2 (en) 2006-10-24
TW200629000A (en) 2006-08-16
CN1797207A (zh) 2006-07-05
CN100524030C (zh) 2009-08-05
US7239373B2 (en) 2007-07-03

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