DE602005009408D1 - Einkristall-Diamantsubstrat und dessen Herstellungsverfahren - Google Patents

Einkristall-Diamantsubstrat und dessen Herstellungsverfahren

Info

Publication number
DE602005009408D1
DE602005009408D1 DE602005009408T DE602005009408T DE602005009408D1 DE 602005009408 D1 DE602005009408 D1 DE 602005009408D1 DE 602005009408 T DE602005009408 T DE 602005009408T DE 602005009408 T DE602005009408 T DE 602005009408T DE 602005009408 D1 DE602005009408 D1 DE 602005009408D1
Authority
DE
Germany
Prior art keywords
manufacturing
single crystal
crystal diamond
diamond substrate
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602005009408T
Other languages
English (en)
Inventor
Kiichi Meguro
Yoshiyuki Yamamoto
Takahiro Imai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2004081815A external-priority patent/JP4525897B2/ja
Priority claimed from JP2004322048A external-priority patent/JP4697514B2/ja
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of DE602005009408D1 publication Critical patent/DE602005009408D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer
DE602005009408T 2004-01-16 2005-01-14 Einkristall-Diamantsubstrat und dessen Herstellungsverfahren Active DE602005009408D1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004009047 2004-01-16
JP2004081815A JP4525897B2 (ja) 2004-03-22 2004-03-22 ダイヤモンド単結晶基板
JP2004322048A JP4697514B2 (ja) 2004-01-16 2004-11-05 ダイヤモンド単結晶基板の製造方法およびダイヤモンド単結晶基板

Publications (1)

Publication Number Publication Date
DE602005009408D1 true DE602005009408D1 (de) 2008-10-16

Family

ID=34623593

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602005009408T Active DE602005009408D1 (de) 2004-01-16 2005-01-14 Einkristall-Diamantsubstrat und dessen Herstellungsverfahren

Country Status (4)

Country Link
US (2) US7481879B2 (de)
EP (1) EP1555337B1 (de)
KR (1) KR101082656B1 (de)
DE (1) DE602005009408D1 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4736338B2 (ja) * 2004-03-24 2011-07-27 住友電気工業株式会社 ダイヤモンド単結晶基板
US7615203B2 (en) * 2004-11-05 2009-11-10 Sumitomo Electric Industries, Ltd. Single crystal diamond
JP5594613B2 (ja) * 2005-04-15 2014-09-24 住友電気工業株式会社 単結晶ダイヤモンドおよびその製造方法
JP5002982B2 (ja) * 2005-04-15 2012-08-15 住友電気工業株式会社 単結晶ダイヤモンドの製造方法
US8273225B2 (en) 2006-09-05 2012-09-25 Element Six Limited Solid electrode
US20080169730A1 (en) * 2007-01-11 2008-07-17 Romi Mayder Inverted mesa quartz crystal time base reference for automatic test equipment
EP2108054B1 (de) * 2007-01-22 2013-10-02 Element Six Limited Plasmaätzen von diamantoberflächen
US8246746B2 (en) 2007-01-29 2012-08-21 Carnegie Institution Of Washington Laser uses for single-crystal CVD diamond
JP5377212B2 (ja) * 2009-10-13 2013-12-25 信越化学工業株式会社 単結晶ダイヤモンド基板の製造方法
JP5468528B2 (ja) 2010-06-28 2014-04-09 信越化学工業株式会社 単結晶ダイヤモンド成長用基材及びその製造方法並びに単結晶ダイヤモンド基板の製造方法
US8734753B2 (en) 2010-12-30 2014-05-27 Engis Corporation Surface etched diamond particles and method for etching the surface of diamond particles
WO2012091722A2 (en) * 2010-12-30 2012-07-05 Engis Corporation Surface etched diamond particles and method for etching the surface of diamond particles
EP2985368B1 (de) 2013-04-09 2023-08-30 Sumitomo Electric Industries, Ltd. Einkristalliner diamant und diamantwerkzeug
DE102014205660B4 (de) * 2014-03-26 2020-02-13 Bundesrepublik Deutschland, vertr. durch das Bundesministerium für Wirtschaft und Energie, dieses vertreten durch den Präsidenten der Physikalisch-Technischen Bundesanstalt Prüfkörper zur Kalibrierung eines Raman-Mikroskops
JP6296001B2 (ja) * 2015-05-20 2018-03-20 信越半導体株式会社 シリコンエピタキシャルウェーハの製造方法及び評価方法
CN111321462A (zh) * 2019-12-12 2020-06-23 上海征世科技有限公司 一种用微波等离子体技术生长单晶钻石的基片台
WO2021150587A1 (en) * 2020-01-20 2021-07-29 J2 Materials, Llc Method of growing larger diamonds
CN114032613B (zh) * 2021-10-14 2023-10-31 吉林大学 一种提高拼接法生长金刚石单晶拼接缝质量的方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE68913157T2 (de) * 1988-05-28 1994-09-08 Sumitomo Electric Industries Verfahren zur herstellung von diamant aus der dampfphase.
JP2730145B2 (ja) * 1989-03-07 1998-03-25 住友電気工業株式会社 単結晶ダイヤモンド層の形成法
US5127983A (en) * 1989-05-22 1992-07-07 Sumitomo Electric Industries, Ltd. Method of producing single crystal of high-pressure phase material
US6162412A (en) * 1990-08-03 2000-12-19 Sumitomo Electric Industries, Ltd. Chemical vapor deposition method of high quality diamond
US5614019A (en) 1992-06-08 1997-03-25 Air Products And Chemicals, Inc. Method for the growth of industrial crystals
JP3387154B2 (ja) 1993-06-30 2003-03-17 住友電気工業株式会社 ダイヤモンド単結晶
US5474021A (en) * 1992-09-24 1995-12-12 Sumitomo Electric Industries, Ltd. Epitaxial growth of diamond from vapor phase
JPH06173944A (ja) * 1992-12-03 1994-06-21 Ebara Corp 気体動圧軸受
US5677372A (en) * 1993-04-06 1997-10-14 Sumitomo Electric Industries, Ltd. Diamond reinforced composite material
US5433977A (en) * 1993-05-21 1995-07-18 Trustees Of Boston University Enhanced adherence of diamond coatings by combustion flame CVD
JPH06345592A (ja) * 1993-06-10 1994-12-20 Kobe Steel Ltd ダイヤモンド薄膜の形成方法
JPH0717793A (ja) 1993-07-05 1995-01-20 Hitachi Cable Ltd 化合物半導体単結晶の製造方法
ZA946002B (en) * 1993-08-12 1995-03-14 De Beers Ind Diamond Detecting ionising radiation
JPH0948694A (ja) * 1995-08-04 1997-02-18 Kobe Steel Ltd 単結晶ダイヤモンド膜の形成方法
JP3168961B2 (ja) * 1997-10-06 2001-05-21 住友電気工業株式会社 ダイヤモンド基板及びダイヤモンド基板の評価方法並びにダイヤモンド表面弾性波フィルタ
US6589333B1 (en) * 1999-09-17 2003-07-08 Max-Planck-Gesellschaft Zur Foerderung Der Wissenschaften E.V. Method for the manufacture of a substrate, substrate manufactured in accordance with this method, carrier wafer and diamond jewel
GB2383588B (en) 2000-06-15 2004-05-05 Element Six Single crystal diamond prepared by CVD
CN1210445C (zh) * 2000-06-15 2005-07-13 六号元素(控股)公司 厚的单晶金刚石层、其制备方法和由该层生产的宝石
JP4374823B2 (ja) 2002-03-22 2009-12-02 住友電気工業株式会社 ダイヤモンド単結晶の製造方法およびダイヤモンド単結晶基板の製造方法
CN1331235C (zh) * 2002-06-18 2007-08-08 住友电气工业株式会社 n型半导体金刚石的制造方法及半导体金刚石

Also Published As

Publication number Publication date
EP1555337A2 (de) 2005-07-20
US20080311024A1 (en) 2008-12-18
KR20050075715A (ko) 2005-07-21
EP1555337A3 (de) 2005-10-26
US20050155543A1 (en) 2005-07-21
US7481879B2 (en) 2009-01-27
US7771693B2 (en) 2010-08-10
EP1555337B1 (de) 2008-09-03
KR101082656B1 (ko) 2011-11-14

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