DE602005017217D1 - Laserbestrahlungsmethode, Laserbestrahlungsvorrichtung und Verfahren zur Herstellung einer kristallinen Halbleiter-Schicht - Google Patents

Laserbestrahlungsmethode, Laserbestrahlungsvorrichtung und Verfahren zur Herstellung einer kristallinen Halbleiter-Schicht

Info

Publication number
DE602005017217D1
DE602005017217D1 DE602005017217T DE602005017217T DE602005017217D1 DE 602005017217 D1 DE602005017217 D1 DE 602005017217D1 DE 602005017217 T DE602005017217 T DE 602005017217T DE 602005017217 T DE602005017217 T DE 602005017217T DE 602005017217 D1 DE602005017217 D1 DE 602005017217D1
Authority
DE
Germany
Prior art keywords
laser irradiation
producing
semiconductor layer
crystalline semiconductor
irradiation apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602005017217T
Other languages
English (en)
Inventor
Koichiro Tanaka
Hirotada Oishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of DE602005017217D1 publication Critical patent/DE602005017217D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/0604—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams
    • B23K26/0608—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams in the same heat affected zone [HAZ]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K15/00—Electron-beam welding or cutting
    • B23K15/0046—Welding
    • B23K15/0093—Welding characterised by the properties of the materials to be welded
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K15/00—Electron-beam welding or cutting
    • B23K15/10—Non-vacuum electron beam-welding or cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/0648—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising lenses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/073—Shaping the laser spot
    • B23K26/0732—Shaping the laser spot into a rectangular shape
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/073—Shaping the laser spot
    • B23K26/0738—Shaping the laser spot into a linear shape
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0927—Systems for changing the beam intensity distribution, e.g. Gaussian to top-hat
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0938—Using specific optical elements
    • G02B27/095—Refractive optical elements
    • G02B27/0955—Lenses
    • G02B27/0961—Lens arrays
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0938—Using specific optical elements
    • G02B27/095—Refractive optical elements
    • G02B27/0955—Lenses
    • G02B27/0966—Cylindrical lenses
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B3/0006—Arrays
    • G02B3/0037—Arrays characterized by the distribution or form of lenses
    • G02B3/0062—Stacked lens arrays, i.e. refractive surfaces arranged in at least two planes, without structurally separate optical elements in-between
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
DE602005017217T 2004-05-14 2005-04-21 Laserbestrahlungsmethode, Laserbestrahlungsvorrichtung und Verfahren zur Herstellung einer kristallinen Halbleiter-Schicht Active DE602005017217D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004145612A JP4579575B2 (ja) 2004-05-14 2004-05-14 レーザ照射方法及びレーザ照射装置

Publications (1)

Publication Number Publication Date
DE602005017217D1 true DE602005017217D1 (de) 2009-12-03

Family

ID=34935560

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602005017217T Active DE602005017217D1 (de) 2004-05-14 2005-04-21 Laserbestrahlungsmethode, Laserbestrahlungsvorrichtung und Verfahren zur Herstellung einer kristallinen Halbleiter-Schicht

Country Status (5)

Country Link
US (4) US7595932B2 (de)
EP (2) EP1596241B1 (de)
JP (1) JP4579575B2 (de)
CN (1) CN100483180C (de)
DE (1) DE602005017217D1 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4579575B2 (ja) 2004-05-14 2010-11-10 株式会社半導体エネルギー研究所 レーザ照射方法及びレーザ照射装置
EP1708008B1 (de) * 2005-04-01 2011-08-17 Semiconductor Energy Laboratory Co., Ltd. Strahlhomogenisator und Laserbestrahlungsvorrichtung
WO2007049525A1 (en) 2005-10-26 2007-05-03 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus and manufacturing method of semiconductor device
KR20090076102A (ko) * 2008-01-07 2009-07-13 삼성전자주식회사 다채널용 광픽업 및 이를 적용한 다채널 광 기록/재생장치
KR102152641B1 (ko) * 2013-10-31 2020-09-08 엘지전자 주식회사 이동 로봇
CN103676498B (zh) * 2013-11-18 2017-04-05 中国科学院上海光学精密机械研究所 光刻机光瞳整形单元结构及其衍射光学元件设计方法
KR101621386B1 (ko) * 2014-05-21 2016-05-31 한양대학교 산학협력단 레이저 표면파 발생장치 및 이의 레이저 표면파 발생방법
US9953111B2 (en) * 2014-06-06 2018-04-24 Matterport, Inc. Semantic understanding of 3D data
CN104360485B (zh) * 2014-11-04 2017-02-15 北京凌云光技术有限责任公司 线性激光光源及图像获取系统
JP6527725B2 (ja) * 2015-03-13 2019-06-05 藤垣　元治 三次元形状測定装置
KR102582652B1 (ko) * 2016-12-21 2023-09-25 삼성디스플레이 주식회사 레이저 결정화 장치
EP3712686A1 (de) * 2019-03-18 2020-09-23 LIMO Display GmbH Vorrichtung zur erzeugung einer linearen intensitätsverteilung in einer arbeitsebene

Family Cites Families (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61156218A (ja) * 1984-12-28 1986-07-15 Nec Corp 二次元射出レンズ
US4769750A (en) * 1985-10-18 1988-09-06 Nippon Kogaku K. K. Illumination optical system
US4951274A (en) * 1987-01-23 1990-08-21 Nec Corporation Magneto-optical head capable of separating beams for reading recorded information and servo information by use of one optical element
US5153773A (en) 1989-06-08 1992-10-06 Canon Kabushiki Kaisha Illumination device including amplitude-division and beam movements
JPH06124913A (ja) * 1992-06-26 1994-05-06 Semiconductor Energy Lab Co Ltd レーザー処理方法
US6300176B1 (en) 1994-07-22 2001-10-09 Semiconductor Energy Laboratory Co., Ltd. Laser processing method
JP3917231B2 (ja) 1996-02-06 2007-05-23 株式会社半導体エネルギー研究所 レーザー照射装置およびレーザー照射方法
JPH09234579A (ja) 1996-02-28 1997-09-09 Semiconductor Energy Lab Co Ltd レーザー照射装置
JP3813269B2 (ja) 1996-11-01 2006-08-23 株式会社半導体エネルギー研究所 レーザー照射システム
JP4056577B2 (ja) 1997-02-28 2008-03-05 株式会社半導体エネルギー研究所 レーザー照射方法
JPH10244392A (ja) 1997-03-04 1998-09-14 Semiconductor Energy Lab Co Ltd レーザー照射装置
JPH10253916A (ja) 1997-03-10 1998-09-25 Semiconductor Energy Lab Co Ltd レーザー光学装置
JP4059952B2 (ja) 1997-03-27 2008-03-12 株式会社半導体エネルギー研究所 レーザー光照射方法
JP4086932B2 (ja) 1997-04-17 2008-05-14 株式会社半導体エネルギー研究所 レーザー照射装置及びレーザー処理方法
JP3770999B2 (ja) 1997-04-21 2006-04-26 株式会社半導体エネルギー研究所 レーザー照射装置及びレーザー照射方法
JP3484481B2 (ja) * 1997-06-19 2004-01-06 住友重機械工業株式会社 ビームホモジナイザ及びそれを用いた半導体薄膜の製造方法
JPH1184418A (ja) * 1997-09-08 1999-03-26 Sanyo Electric Co Ltd 表示装置
JP3462053B2 (ja) 1997-09-30 2003-11-05 株式会社半導体エネルギー研究所 ビームホモジェナイザーおよびレーザー照射装置およびレーザー照射方法および半導体デバイス
US6246524B1 (en) 1998-07-13 2001-06-12 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer, laser irradiation apparatus, laser irradiation method, and method of manufacturing semiconductor device
JP2000111714A (ja) * 1998-09-30 2000-04-21 Konica Corp ソフトフォーカスフィルタおよびソフトフォーカスフィルタユニット
EP1744349A3 (de) 1998-10-05 2007-04-04 Semiconductor Energy Laboratory Co., Ltd. Laserbestrahlungsvorrichtung, Laserbestrahlungsverfahren, Strahlhomogenisierer und Herstellungsverfahren für ein Halbleiterbauelement
JP4588153B2 (ja) * 1999-03-08 2010-11-24 株式会社半導体エネルギー研究所 レーザー照射装置
US6393042B1 (en) 1999-03-08 2002-05-21 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer and laser irradiation apparatus
US6567219B1 (en) 1999-08-13 2003-05-20 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus
DE60045653D1 (de) 1999-08-13 2011-04-07 Semiconductor Energy Lab Laserbestrahlungsgerät
US6548370B1 (en) 1999-08-18 2003-04-15 Semiconductor Energy Laboratory Co., Ltd. Method of crystallizing a semiconductor layer by applying laser irradiation that vary in energy to its top and bottom surfaces
US6524877B1 (en) * 1999-10-26 2003-02-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and method of fabricating the same
US6573162B2 (en) 1999-12-24 2003-06-03 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus and method of fabricating a semiconductor device
US6856630B2 (en) 2000-02-02 2005-02-15 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer, laser irradiation apparatus, semiconductor device, and method of fabricating the semiconductor device
US6373633B1 (en) * 2000-07-06 2002-04-16 Mems Optical, Llc Shaping irradiance profiles using optical elements with positive and negative optical powers
GB0019454D0 (en) 2000-08-09 2000-09-27 Stevens Brian T Laser system
JP3605047B2 (ja) * 2001-05-22 2004-12-22 キヤノン株式会社 照明装置、露光装置、デバイス製造方法及びデバイス
TW558861B (en) 2001-06-15 2003-10-21 Semiconductor Energy Lab Laser irradiation stage, laser irradiation optical system, laser irradiation apparatus, laser irradiation method, and method of manufacturing semiconductor device
US6646807B2 (en) * 2001-06-19 2003-11-11 Rohm Co., Ltd. Lens array unit and process for making lens array
US7372630B2 (en) 2001-08-17 2008-05-13 Semiconductor Energy Laboratory Co., Ltd. Laser, irradiation apparatus, laser irradiation method, and method for manufacturing semiconductor device
DE10139355A1 (de) 2001-08-17 2003-02-27 Lissotschenko Vitalij Anordnung und Vorrichtung zur optischen Strahlhomogenisierung
JP3977038B2 (ja) * 2001-08-27 2007-09-19 株式会社半導体エネルギー研究所 レーザ照射装置およびレーザ照射方法
SG120880A1 (en) 2001-08-31 2006-04-26 Semiconductor Energy Lab Laser irradiation method, laser irradiation apparatus, and method of manufacturing a semiconductor device
US7112517B2 (en) 2001-09-10 2006-09-26 Semiconductor Energy Laboratory Co., Ltd. Laser treatment device, laser treatment method, and semiconductor device fabrication method
US7026227B2 (en) 2001-11-16 2006-04-11 Semiconductor Energy Laboratory Co., Ltd. Method of irradiating a laser beam, and method of fabricating semiconductor devices
JP2003255262A (ja) * 2002-03-05 2003-09-10 Tokyo Instruments Inc フェムト秒レーザーを用いた特殊光学系
JP2004066327A (ja) * 2002-08-09 2004-03-04 Tdk Corp レーザ加工装置、加工方法、および当該加工方法を用いた回路基板の製造方法
IL151504A (en) * 2002-08-27 2006-10-31 Thermion Ltd Inprovements in thermostat for water boiler
TWI332682B (en) 2002-09-19 2010-11-01 Semiconductor Energy Lab Beam homogenizer and laser irradiation apparatus and method of manufacturing semiconductor device
US7259082B2 (en) 2002-10-03 2007-08-21 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
JP2004128421A (ja) 2002-10-07 2004-04-22 Semiconductor Energy Lab Co Ltd レーザ照射方法およびレーザ照射装置、並びに半導体装置の作製方法
SG137674A1 (en) 2003-04-24 2007-12-28 Semiconductor Energy Lab Beam homogenizer, laser irradiation apparatus, and method for manufacturing semiconductor device
US7245802B2 (en) 2003-08-04 2007-07-17 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer, laser irradiation apparatus and method for manufacturing semiconductor device
US7450307B2 (en) 2003-09-09 2008-11-11 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus, laser irradiation method, and method for manufacturing semiconductor device
JP4579575B2 (ja) * 2004-05-14 2010-11-10 株式会社半導体エネルギー研究所 レーザ照射方法及びレーザ照射装置

Also Published As

Publication number Publication date
US20160311057A1 (en) 2016-10-27
JP4579575B2 (ja) 2010-11-10
EP1596241A1 (de) 2005-11-16
US9387553B2 (en) 2016-07-12
US20050254395A1 (en) 2005-11-17
EP1596241B1 (de) 2009-10-21
US20090291569A1 (en) 2009-11-26
CN100483180C (zh) 2009-04-29
EP2113805B1 (de) 2012-06-27
US20110304920A1 (en) 2011-12-15
US10369658B2 (en) 2019-08-06
EP2113805A1 (de) 2009-11-04
JP2005327942A (ja) 2005-11-24
CN1696763A (zh) 2005-11-16
US8045271B2 (en) 2011-10-25
US7595932B2 (en) 2009-09-29

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