DE602005024745D1 - Reinigungsapparat - Google Patents
ReinigungsapparatInfo
- Publication number
- DE602005024745D1 DE602005024745D1 DE602005024745T DE602005024745T DE602005024745D1 DE 602005024745 D1 DE602005024745 D1 DE 602005024745D1 DE 602005024745 T DE602005024745 T DE 602005024745T DE 602005024745 T DE602005024745 T DE 602005024745T DE 602005024745 D1 DE602005024745 D1 DE 602005024745D1
- Authority
- DE
- Germany
- Prior art keywords
- substrate
- proximity head
- opening
- purifier
- cavity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C11/00—Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
- B05C11/10—Storage, supply or control of liquid or other fluent material; Recovery of excess liquid or other fluent material
- B05C11/1039—Recovery of excess liquid or other fluent material; Controlling means therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C5/00—Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work
- B05C5/02—Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work the liquid or other fluent material being discharged through an outlet orifice by pressure, e.g. from an outlet device in contact or almost in contact, with the work
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S134/00—Cleaning and liquid contact with solids
- Y10S134/902—Semiconductor wafer
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/883,301 US6954993B1 (en) | 2002-09-30 | 2004-06-30 | Concentric proximity processing head |
US10/956,799 US7093375B2 (en) | 2002-09-30 | 2004-09-30 | Apparatus and method for utilizing a meniscus in substrate processing |
Publications (1)
Publication Number | Publication Date |
---|---|
DE602005024745D1 true DE602005024745D1 (de) | 2010-12-30 |
Family
ID=34978730
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602005024745T Active DE602005024745D1 (de) | 2004-06-30 | 2005-06-22 | Reinigungsapparat |
Country Status (9)
Country | Link |
---|---|
US (2) | US7093375B2 (de) |
EP (1) | EP1612847B1 (de) |
JP (2) | JP5013685B2 (de) |
KR (1) | KR101157847B1 (de) |
AT (1) | ATE488863T1 (de) |
DE (1) | DE602005024745D1 (de) |
MY (1) | MY138656A (de) |
SG (1) | SG118400A1 (de) |
TW (1) | TWI292176B (de) |
Families Citing this family (164)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7584761B1 (en) * | 2000-06-30 | 2009-09-08 | Lam Research Corporation | Wafer edge surface treatment with liquid meniscus |
US7234477B2 (en) | 2000-06-30 | 2007-06-26 | Lam Research Corporation | Method and apparatus for drying semiconductor wafer surfaces using a plurality of inlets and outlets held in close proximity to the wafer surfaces |
US20040031167A1 (en) | 2002-06-13 | 2004-02-19 | Stein Nathan D. | Single wafer method and apparatus for drying semiconductor substrates using an inert gas air-knife |
US7389783B2 (en) * | 2002-09-30 | 2008-06-24 | Lam Research Corporation | Proximity meniscus manifold |
US7367345B1 (en) | 2002-09-30 | 2008-05-06 | Lam Research Corporation | Apparatus and method for providing a confined liquid for immersion lithography |
US7513262B2 (en) | 2002-09-30 | 2009-04-07 | Lam Research Corporation | Substrate meniscus interface and methods for operation |
US7293571B2 (en) | 2002-09-30 | 2007-11-13 | Lam Research Corporation | Substrate proximity processing housing and insert for generating a fluid meniscus |
US7383843B2 (en) * | 2002-09-30 | 2008-06-10 | Lam Research Corporation | Method and apparatus for processing wafer surfaces using thin, high velocity fluid layer |
US7614411B2 (en) | 2002-09-30 | 2009-11-10 | Lam Research Corporation | Controls of ambient environment during wafer drying using proximity head |
US7093375B2 (en) * | 2002-09-30 | 2006-08-22 | Lam Research Corporation | Apparatus and method for utilizing a meniscus in substrate processing |
US7520285B2 (en) * | 2002-09-30 | 2009-04-21 | Lam Research Corporation | Apparatus and method for processing a substrate |
US8236382B2 (en) * | 2002-09-30 | 2012-08-07 | Lam Research Corporation | Proximity substrate preparation sequence, and method, apparatus, and system for implementing the same |
US7153400B2 (en) * | 2002-09-30 | 2006-12-26 | Lam Research Corporation | Apparatus and method for depositing and planarizing thin films of semiconductor wafers |
US7997288B2 (en) * | 2002-09-30 | 2011-08-16 | Lam Research Corporation | Single phase proximity head having a controlled meniscus for treating a substrate |
US7198055B2 (en) * | 2002-09-30 | 2007-04-03 | Lam Research Corporation | Meniscus, vacuum, IPA vapor, drying manifold |
US7632376B1 (en) * | 2002-09-30 | 2009-12-15 | Lam Research Corporation | Method and apparatus for atomic layer deposition (ALD) in a proximity system |
US9482966B2 (en) | 2002-11-12 | 2016-11-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US10503084B2 (en) | 2002-11-12 | 2019-12-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
CN101713932B (zh) | 2002-11-12 | 2012-09-26 | Asml荷兰有限公司 | 光刻装置和器件制造方法 |
JP3977324B2 (ja) | 2002-11-12 | 2007-09-19 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置 |
KR101036114B1 (ko) * | 2002-12-10 | 2011-05-23 | 가부시키가이샤 니콘 | 노광장치 및 노광방법, 디바이스 제조방법 |
KR101037057B1 (ko) * | 2002-12-10 | 2011-05-26 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
CN101852993A (zh) | 2002-12-10 | 2010-10-06 | 株式会社尼康 | 曝光装置和器件制造方法 |
US7948604B2 (en) * | 2002-12-10 | 2011-05-24 | Nikon Corporation | Exposure apparatus and method for producing device |
JP4352874B2 (ja) * | 2002-12-10 | 2009-10-28 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
US7242455B2 (en) * | 2002-12-10 | 2007-07-10 | Nikon Corporation | Exposure apparatus and method for producing device |
KR20130010039A (ko) * | 2002-12-10 | 2013-01-24 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
DE10261775A1 (de) | 2002-12-20 | 2004-07-01 | Carl Zeiss Smt Ag | Vorrichtung zur optischen Vermessung eines Abbildungssystems |
KR101875296B1 (ko) * | 2003-02-26 | 2018-07-05 | 가부시키가이샤 니콘 | 노광 장치, 노광 방법 및 디바이스 제조 방법 |
KR101181688B1 (ko) | 2003-03-25 | 2012-09-19 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
ATE426914T1 (de) * | 2003-04-07 | 2009-04-15 | Nikon Corp | Belichtungsgerat und verfahren zur herstellung einer vorrichtung |
WO2004093159A2 (en) * | 2003-04-09 | 2004-10-28 | Nikon Corporation | Immersion lithography fluid control system |
JP4656057B2 (ja) * | 2003-04-10 | 2011-03-23 | 株式会社ニコン | 液浸リソグラフィ装置用電気浸透素子 |
EP2717098B1 (de) | 2003-04-10 | 2015-05-13 | Nikon Corporation | System zur Umgebungskontrolle mittels Vakuum-Rückförderung für eine Immersionslithografievorrichtung |
KR101129213B1 (ko) * | 2003-04-10 | 2012-03-27 | 가부시키가이샤 니콘 | 액침 리소그래피 장치용 액체를 수집하는 런-오프 경로 |
KR101497289B1 (ko) | 2003-04-10 | 2015-02-27 | 가부시키가이샤 니콘 | 액침 리소그래피 장치용 운반 영역을 포함하는 환경 시스템 |
JP4582089B2 (ja) | 2003-04-11 | 2010-11-17 | 株式会社ニコン | 液浸リソグラフィ用の液体噴射回収システム |
KR101697896B1 (ko) | 2003-04-11 | 2017-01-18 | 가부시키가이샤 니콘 | 액침 리소그래피 머신에서 웨이퍼 교환동안 투영 렌즈 아래의 갭에서 액침 액체를 유지하는 장치 및 방법 |
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EP1614000B1 (de) | 2003-04-17 | 2012-01-18 | Nikon Corporation | Lithographisches Immersionsgerät |
TWI295414B (en) * | 2003-05-13 | 2008-04-01 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
CN100437358C (zh) * | 2003-05-15 | 2008-11-26 | 株式会社尼康 | 曝光装置及器件制造方法 |
TW201515064A (zh) | 2003-05-23 | 2015-04-16 | 尼康股份有限公司 | 曝光方法及曝光裝置以及元件製造方法 |
TWI424470B (zh) | 2003-05-23 | 2014-01-21 | 尼康股份有限公司 | A method of manufacturing an exposure apparatus and an element |
KR20150036794A (ko) * | 2003-05-28 | 2015-04-07 | 가부시키가이샤 니콘 | 노광 방법, 노광 장치, 및 디바이스 제조 방법 |
US7213963B2 (en) | 2003-06-09 | 2007-05-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
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US7675000B2 (en) * | 2003-06-24 | 2010-03-09 | Lam Research Corporation | System method and apparatus for dry-in, dry-out, low defect laser dicing using proximity technology |
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KR101343720B1 (ko) | 2003-07-28 | 2013-12-20 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법, 그리고 노광 장치의제어 방법 |
EP1503244A1 (de) | 2003-07-28 | 2005-02-02 | ASML Netherlands B.V. | Lithographischer Projektionsapparat und Verfahren zur Herstellung einer Vorrichtung |
US7175968B2 (en) * | 2003-07-28 | 2007-02-13 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and a substrate |
US7779781B2 (en) | 2003-07-31 | 2010-08-24 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
TWI263859B (en) | 2003-08-29 | 2006-10-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
KR101419192B1 (ko) * | 2003-08-29 | 2014-07-15 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
TWI245163B (en) | 2003-08-29 | 2005-12-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
KR101748923B1 (ko) * | 2003-09-03 | 2017-06-19 | 가부시키가이샤 니콘 | 액침 리소그래피용 유체를 제공하기 위한 장치 및 방법 |
JP4444920B2 (ja) * | 2003-09-19 | 2010-03-31 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
SG131929A1 (en) | 2003-09-29 | 2007-05-28 | Nikon Corp | Exposure apparatus, exposure method, and device manufacturing method |
WO2005036623A1 (ja) | 2003-10-08 | 2005-04-21 | Zao Nikon Co., Ltd. | 基板搬送装置及び基板搬送方法、露光装置及び露光方法、デバイス製造方法 |
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TWI553701B (zh) | 2003-10-09 | 2016-10-11 | 尼康股份有限公司 | Exposure apparatus and exposure method, component manufacturing method |
KR20140049044A (ko) | 2003-10-22 | 2014-04-24 | 가부시키가이샤 니콘 | 노광 장치, 노광 방법, 디바이스의 제조 방법 |
US7352433B2 (en) | 2003-10-28 | 2008-04-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7411653B2 (en) * | 2003-10-28 | 2008-08-12 | Asml Netherlands B.V. | Lithographic apparatus |
US7528929B2 (en) | 2003-11-14 | 2009-05-05 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
SG148994A1 (en) | 2003-12-03 | 2009-01-29 | Nikon Corp | Exposure apparatus, exposure method, method for producing device, and optical part |
WO2005057635A1 (ja) * | 2003-12-15 | 2005-06-23 | Nikon Corporation | 投影露光装置及びステージ装置、並びに露光方法 |
US20070081133A1 (en) * | 2004-12-14 | 2007-04-12 | Niikon Corporation | Projection exposure apparatus and stage unit, and exposure method |
JP4720506B2 (ja) | 2003-12-15 | 2011-07-13 | 株式会社ニコン | ステージ装置、露光装置、及び露光方法 |
DE10361075A1 (de) * | 2003-12-22 | 2005-07-28 | Pac Tech - Packaging Technologies Gmbh | Verfahren und Vorichtung zur Trocknung von Schaltungssubstraten |
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JP2012074717A (ja) | 2012-04-12 |
KR20060049725A (ko) | 2006-05-19 |
EP1612847A2 (de) | 2006-01-04 |
EP1612847A3 (de) | 2007-11-28 |
KR101157847B1 (ko) | 2012-06-22 |
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SG118400A1 (en) | 2006-01-27 |
JP5013685B2 (ja) | 2012-08-29 |
JP5331865B2 (ja) | 2013-10-30 |
EP1612847B1 (de) | 2010-11-17 |
US20050217703A1 (en) | 2005-10-06 |
US7363727B2 (en) | 2008-04-29 |
US20060254078A1 (en) | 2006-11-16 |
ATE488863T1 (de) | 2010-12-15 |
JP2006049858A (ja) | 2006-02-16 |
TW200610006A (en) | 2006-03-16 |
US7093375B2 (en) | 2006-08-22 |
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