DE602006011501D1 - Rotationsscherspannung für ladungsträgermobilitäts-modifikation - Google Patents
Rotationsscherspannung für ladungsträgermobilitäts-modifikationInfo
- Publication number
- DE602006011501D1 DE602006011501D1 DE602006011501T DE602006011501T DE602006011501D1 DE 602006011501 D1 DE602006011501 D1 DE 602006011501D1 DE 602006011501 T DE602006011501 T DE 602006011501T DE 602006011501 T DE602006011501 T DE 602006011501T DE 602006011501 D1 DE602006011501 D1 DE 602006011501D1
- Authority
- DE
- Germany
- Prior art keywords
- charge storage
- shift voltage
- rotation shift
- isolation
- stress
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000004048 modification Effects 0.000 title 1
- 238000012986 modification Methods 0.000 title 1
- 238000002955 isolation Methods 0.000 abstract 7
- 239000004065 semiconductor Substances 0.000 abstract 2
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
- H01L21/76229—Concurrent filling of a plurality of trenches having a different trench shape or dimension, e.g. rectangular and V-shaped trenches, wide and narrow trenches, shallow and deep trenches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
- H01L29/7846—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate the means being located in the lateral device isolation region, e.g. STI
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/665—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using self aligned silicidation, i.e. salicide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/164,179 US7348638B2 (en) | 2005-11-14 | 2005-11-14 | Rotational shear stress for charge carrier mobility modification |
PCT/EP2006/066992 WO2007054405A1 (en) | 2005-11-14 | 2006-10-03 | Rotational shear stress for charge carrier mobility modification |
Publications (1)
Publication Number | Publication Date |
---|---|
DE602006011501D1 true DE602006011501D1 (de) | 2010-02-11 |
Family
ID=37603103
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602006011501T Active DE602006011501D1 (de) | 2005-11-14 | 2006-10-03 | Rotationsscherspannung für ladungsträgermobilitäts-modifikation |
Country Status (9)
Country | Link |
---|---|
US (2) | US7348638B2 (de) |
EP (1) | EP1949429B1 (de) |
JP (1) | JP4629781B2 (de) |
KR (1) | KR101027177B1 (de) |
CN (1) | CN101300673B (de) |
AT (1) | ATE453927T1 (de) |
DE (1) | DE602006011501D1 (de) |
TW (1) | TWI394264B (de) |
WO (1) | WO2007054405A1 (de) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7274084B2 (en) * | 2005-01-12 | 2007-09-25 | International Business Machines Corporation | Enhanced PFET using shear stress |
US8407634B1 (en) | 2005-12-01 | 2013-03-26 | Synopsys Inc. | Analysis of stress impact on transistor performance |
JP4822857B2 (ja) * | 2006-02-01 | 2011-11-24 | 株式会社東芝 | 半導体装置及びその製造方法 |
US7538391B2 (en) * | 2007-01-09 | 2009-05-26 | International Business Machines Corporation | Curved FINFETs |
US8680617B2 (en) * | 2009-10-06 | 2014-03-25 | International Business Machines Corporation | Split level shallow trench isolation for area efficient body contacts in SOI MOSFETS |
US9817928B2 (en) | 2012-08-31 | 2017-11-14 | Synopsys, Inc. | Latch-up suppression and substrate noise coupling reduction through a substrate back-tie for 3D integrated circuits |
US9190346B2 (en) | 2012-08-31 | 2015-11-17 | Synopsys, Inc. | Latch-up suppression and substrate noise coupling reduction through a substrate back-tie for 3D integrated circuits |
US9379018B2 (en) | 2012-12-17 | 2016-06-28 | Synopsys, Inc. | Increasing Ion/Ioff ratio in FinFETs and nano-wires |
US8847324B2 (en) | 2012-12-17 | 2014-09-30 | Synopsys, Inc. | Increasing ION /IOFF ratio in FinFETs and nano-wires |
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US7476938B2 (en) * | 2005-11-21 | 2009-01-13 | International Business Machines Corporation | Transistor having dielectric stressor elements at different depths from a semiconductor surface for applying shear stress |
-
2005
- 2005-11-14 US US11/164,179 patent/US7348638B2/en active Active
-
2006
- 2006-10-03 KR KR1020087012356A patent/KR101027177B1/ko not_active IP Right Cessation
- 2006-10-03 EP EP06793952A patent/EP1949429B1/de not_active Not-in-force
- 2006-10-03 JP JP2008539378A patent/JP4629781B2/ja not_active Expired - Fee Related
- 2006-10-03 CN CN2006800410777A patent/CN101300673B/zh not_active Expired - Fee Related
- 2006-10-03 WO PCT/EP2006/066992 patent/WO2007054405A1/en active Application Filing
- 2006-10-03 DE DE602006011501T patent/DE602006011501D1/de active Active
- 2006-10-03 AT AT06793952T patent/ATE453927T1/de not_active IP Right Cessation
- 2006-11-10 TW TW095141717A patent/TWI394264B/zh not_active IP Right Cessation
-
2007
- 2007-12-28 US US11/965,993 patent/US7504697B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
KR20080068095A (ko) | 2008-07-22 |
WO2007054405A1 (en) | 2007-05-18 |
CN101300673A (zh) | 2008-11-05 |
ATE453927T1 (de) | 2010-01-15 |
KR101027177B1 (ko) | 2011-04-05 |
EP1949429B1 (de) | 2009-12-30 |
US20080105953A1 (en) | 2008-05-08 |
TWI394264B (zh) | 2013-04-21 |
US7504697B2 (en) | 2009-03-17 |
US7348638B2 (en) | 2008-03-25 |
JP4629781B2 (ja) | 2011-02-09 |
US20070108531A1 (en) | 2007-05-17 |
JP2009516364A (ja) | 2009-04-16 |
TW200739880A (en) | 2007-10-16 |
EP1949429A1 (de) | 2008-07-30 |
CN101300673B (zh) | 2010-08-18 |
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