DE602006015785D1 - L-dimension-scatterometrie - Google Patents
L-dimension-scatterometrieInfo
- Publication number
- DE602006015785D1 DE602006015785D1 DE602006015785T DE602006015785T DE602006015785D1 DE 602006015785 D1 DE602006015785 D1 DE 602006015785D1 DE 602006015785 T DE602006015785 T DE 602006015785T DE 602006015785 T DE602006015785 T DE 602006015785T DE 602006015785 D1 DE602006015785 D1 DE 602006015785D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor
- scatterometers
- scatterometry
- methods
- applications
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/30—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/27—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands using photo-electric detection ; circuits for computing concentration
- G01N21/274—Calibration, base line adjustment, drift correction
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
- G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
- G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
- G01N2021/4792—Polarisation of scatter light
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/21—Polarisation-affecting properties
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US65671205P | 2005-02-25 | 2005-02-25 | |
PCT/US2006/006449 WO2006093800A1 (en) | 2005-02-25 | 2006-02-24 | Apparatus and method for enhanced critical dimension scatterometry |
Publications (1)
Publication Number | Publication Date |
---|---|
DE602006015785D1 true DE602006015785D1 (de) | 2010-09-09 |
Family
ID=36440961
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602006015785T Active DE602006015785D1 (de) | 2005-02-25 | 2006-02-24 | L-dimension-scatterometrie |
Country Status (5)
Country | Link |
---|---|
US (8) | US20060285110A1 (de) |
EP (1) | EP1864080B1 (de) |
AT (1) | ATE475862T1 (de) |
DE (1) | DE602006015785D1 (de) |
WO (7) | WO2006091913A1 (de) |
Families Citing this family (80)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080144036A1 (en) | 2006-12-19 | 2008-06-19 | Asml Netherlands B.V. | Method of measurement, an inspection apparatus and a lithographic apparatus |
US7791727B2 (en) * | 2004-08-16 | 2010-09-07 | Asml Netherlands B.V. | Method and apparatus for angular-resolved spectroscopic lithography characterization |
WO2006091913A1 (en) | 2005-02-25 | 2006-08-31 | Nanometrics Incorporated | Apparatus and method for enhanced critical dimension scatterometry |
US7733100B2 (en) | 2005-08-26 | 2010-06-08 | Dcg Systems, Inc. | System and method for modulation mapping |
US20080018897A1 (en) * | 2006-07-20 | 2008-01-24 | Nanometrics Incorporated | Methods and apparatuses for assessing overlay error on workpieces |
US8233155B2 (en) * | 2006-10-13 | 2012-07-31 | Asml Netherlands B.V. | Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method |
US20080135774A1 (en) * | 2006-12-08 | 2008-06-12 | Asml Netherlands B.V. | Scatterometer, a lithographic apparatus and a focus analysis method |
GB2444961A (en) * | 2006-12-22 | 2008-06-25 | Thales Holdings Uk Plc | Imager with detector elements sensitive to radiation of different polarisations |
EP2040061A1 (de) | 2007-09-24 | 2009-03-25 | Koninklijke Philips Electronics N.V. | Vorrichtung und Verfahren zur Beobachtung der Oberfläche einer Probe |
CN101809431B (zh) * | 2007-09-24 | 2014-03-26 | 皇家飞利浦电子股份有限公司 | 用于观察样本表面的设备 |
US20090153882A1 (en) * | 2007-12-14 | 2009-06-18 | Thomas Geiler | Measuring Dimensional Parameters of Structures |
NL1036597A1 (nl) * | 2008-02-29 | 2009-09-01 | Asml Netherlands Bv | Metrology method and apparatus, lithographic apparatus, and device manufacturing method. |
EP2169466B1 (de) * | 2008-09-30 | 2017-06-07 | ASML Holding N.V. | Prüfvorrichtung und Verfahren zum Korrigieren der sphärochromatischen Aberration |
NL2004094A (en) * | 2009-02-11 | 2010-08-12 | Asml Netherlands Bv | Inspection apparatus, lithographic apparatus, lithographic processing cell and inspection method. |
US7961306B2 (en) * | 2009-03-30 | 2011-06-14 | Tokyo Electron Limited | Optimizing sensitivity of optical metrology measurements |
US8030631B2 (en) * | 2009-03-30 | 2011-10-04 | Tokyo Electron Limited | Apparatus for controlling angle of incidence of multiple illumination beams |
US8030632B2 (en) * | 2009-03-30 | 2011-10-04 | Tokyo Electron Limted | Controlling angle of incidence of multiple-beam optical metrology tools |
US8754633B2 (en) * | 2009-05-01 | 2014-06-17 | Dcg Systems, Inc. | Systems and method for laser voltage imaging state mapping |
US9733063B2 (en) * | 2011-01-31 | 2017-08-15 | Biametrics Gmbh | Method and device for determining optical properties by simultaneous measurement of intensities at thin layers using light of several wavelengths |
DE102011004375B3 (de) * | 2011-02-18 | 2012-05-31 | Carl Zeiss Smt Gmbh | Vorrichtung zur Führung von elektromagnetischer Strahlung in eine Projektionsbelichtungsanlage |
US8559008B2 (en) * | 2011-04-07 | 2013-10-15 | Nanometrics Incorporated | Ellipsometer focusing system |
US20140204216A1 (en) * | 2011-07-14 | 2014-07-24 | Francois ANTIER | Radioactivity detection method |
CN102506773B (zh) * | 2011-09-28 | 2016-03-09 | 上海华虹宏力半导体制造有限公司 | 检测晶圆表面粗糙度的方法 |
US8982362B2 (en) * | 2011-10-04 | 2015-03-17 | First Solar, Inc. | System and method for measuring layer thickness and depositing semiconductor layers |
RU2481555C1 (ru) * | 2011-10-20 | 2013-05-10 | Корпорация "САМСУНГ ЭЛЕКТРОНИКС Ко., Лтд." | Оптическая измерительная система и способ измерения критического размера наноструктур на плоской поверхности |
US9322640B2 (en) | 2012-08-07 | 2016-04-26 | Samsing Electronics Co., Ltd. | Optical measuring system and method of measuring critical size |
US9879977B2 (en) | 2012-11-09 | 2018-01-30 | Kla-Tencor Corporation | Apparatus and method for optical metrology with optimized system parameters |
US9291554B2 (en) | 2013-02-05 | 2016-03-22 | Kla-Tencor Corporation | Method of electromagnetic modeling of finite structures and finite illumination for metrology and inspection |
DE102013204442A1 (de) | 2013-03-14 | 2014-10-02 | Carl Zeiss Smt Gmbh | Optischer Wellenleiter zur Führung von Beleuchtungslicht |
US10955359B2 (en) * | 2013-11-12 | 2021-03-23 | International Business Machines Corporation | Method for quantification of process non uniformity using model-based metrology |
WO2015087824A1 (ja) * | 2013-12-09 | 2015-06-18 | 株式会社ニコン | 光学装置、測定装置、測定方法、スクリーニング装置及びスクリーニング方法 |
US9797938B2 (en) * | 2014-03-28 | 2017-10-24 | International Business Machines Corporation | Noise modulation for on-chip noise measurement |
US10088456B2 (en) * | 2014-03-31 | 2018-10-02 | Texas Instruments Incorporated | Scanning acoustic microscopy system and method |
US9885671B2 (en) | 2014-06-09 | 2018-02-06 | Kla-Tencor Corporation | Miniaturized imaging apparatus for wafer edge |
JP6359350B2 (ja) * | 2014-06-13 | 2018-07-18 | 株式会社キーエンス | 三次元形状測定装置、測定データ処理ユニット、測定データ処理方法、及びコンピュータプログラム |
US9645097B2 (en) | 2014-06-20 | 2017-05-09 | Kla-Tencor Corporation | In-line wafer edge inspection, wafer pre-alignment, and wafer cleaning |
US9709510B2 (en) * | 2014-06-26 | 2017-07-18 | Kla-Tencor Corp. | Determining a configuration for an optical element positioned in a collection aperture during wafer inspection |
US9739719B2 (en) | 2014-10-31 | 2017-08-22 | Kla-Tencor Corporation | Measurement systems having linked field and pupil signal detection |
KR102287272B1 (ko) * | 2014-12-04 | 2021-08-06 | 삼성전자주식회사 | 검사장치 및 그 제어 방법 |
US10072921B2 (en) | 2014-12-05 | 2018-09-11 | Kla-Tencor Corporation | Methods and systems for spectroscopic beam profile metrology having a first two dimensional detector to detect collected light transmitted by a first wavelength dispersive element |
WO2016109355A1 (en) * | 2014-12-23 | 2016-07-07 | Bribbla Dynamics Llc | Optical inspection system and method including accounting for variations of optical path length within a sample |
CN105807145B (zh) * | 2014-12-31 | 2019-01-18 | 清华大学 | 静电计 |
CN105807144B (zh) * | 2014-12-31 | 2019-01-18 | 清华大学 | 静电计 |
WO2017038293A1 (ja) * | 2015-09-02 | 2017-03-09 | 株式会社 日立ハイテクノロジーズ | 回路検査方法および試料検査装置 |
US10101676B2 (en) | 2015-09-23 | 2018-10-16 | KLA—Tencor Corporation | Spectroscopic beam profile overlay metrology |
WO2017086948A1 (en) * | 2015-11-18 | 2017-05-26 | Intel Corporation | High power terahertz impulse for fault isolation |
JP6999268B2 (ja) | 2016-01-11 | 2022-01-18 | ブルカー テクノロジーズ リミテッド | X線スキャタロメトリーのための方法および装置 |
US9921152B2 (en) | 2016-01-15 | 2018-03-20 | Kla-Tencor Corporation | Systems and methods for extended infrared spectroscopic ellipsometry |
US11313809B1 (en) * | 2016-05-04 | 2022-04-26 | Kla-Tencor Corporation | Process control metrology |
US9728470B1 (en) | 2016-05-10 | 2017-08-08 | Infineon Technologies Austria Ag | Semiconductor structure and methods |
US10438825B2 (en) | 2016-08-29 | 2019-10-08 | Kla-Tencor Corporation | Spectral reflectometry for in-situ process monitoring and control |
EP3516409B1 (de) | 2016-09-26 | 2023-06-28 | KW Associates LLC | Schätzung einer lichtbogenposition in drei dimensionen |
US10490462B2 (en) | 2016-10-13 | 2019-11-26 | Kla Tencor Corporation | Metrology systems and methods for process control |
US10690602B2 (en) | 2017-02-17 | 2020-06-23 | Kla-Tencor Corporation | Methods and systems for measurement of thick films and high aspect ratio structures |
US10962623B1 (en) | 2017-05-17 | 2021-03-30 | Heathkit Company, Inc. | Accurate and model-based measurement and management systems and methods |
DE102017209254A1 (de) * | 2017-05-31 | 2018-12-06 | Feinmetall Gmbh | Kontaktkopf für eine elektrische Prüfeinrichtung, Prüfeinrichtung |
WO2018232404A1 (en) * | 2017-06-16 | 2018-12-20 | Tektronix, Inc. | Test and measurement devices, systems and methods associated with augmented reality |
JP7119310B2 (ja) * | 2017-08-31 | 2022-08-17 | 富士電機株式会社 | 半導体試験装置 |
US10365211B2 (en) | 2017-09-26 | 2019-07-30 | Kla-Tencor Corporation | Systems and methods for metrology beam stabilization |
US10761116B2 (en) | 2018-01-12 | 2020-09-01 | KW Associates LLC | Sensing and control of position of an electrical discharge |
CN108318454B (zh) * | 2018-03-28 | 2022-11-04 | 山东大学 | 一种带温度压力可控样品池的小角激光散射仪及表征方法 |
JP2019207175A (ja) * | 2018-05-30 | 2019-12-05 | キヤノン株式会社 | 測定装置 |
US10908229B2 (en) | 2018-06-18 | 2021-02-02 | Allegro Microsystems, Llc | Regulation of coefficients used in magnetic field sensor virtual signal generation |
US10866118B2 (en) | 2018-06-18 | 2020-12-15 | Allegro Microsystems, Llc | High resolution magnetic field sensors |
US10578679B2 (en) * | 2018-06-18 | 2020-03-03 | Allegro Microsystems, Llc | Magnetic field sensors having virtual signals |
US10598739B2 (en) * | 2018-06-18 | 2020-03-24 | Allegro Microsystems, Llc | Magnetic field sensors having virtual signals |
WO2020008420A2 (en) * | 2018-07-05 | 2020-01-09 | Bruker Jv Israel Ltd. | Small-angle x-ray scatterometry |
US11703464B2 (en) | 2018-07-28 | 2023-07-18 | Bruker Technologies Ltd. | Small-angle x-ray scatterometry |
US10872403B2 (en) | 2018-08-10 | 2020-12-22 | Micron Technology, Inc. | System for predicting properties of structures, imager system, and related methods |
US10816464B2 (en) | 2019-01-23 | 2020-10-27 | Applied Materials, Inc. | Imaging reflectometer |
US11385167B2 (en) | 2019-10-01 | 2022-07-12 | Onto Innovation Inc. | Beamsplitter based ellipsometer focusing system |
EP4065957A1 (de) | 2019-11-28 | 2022-10-05 | EV Group E. Thallner GmbH | Vorrichtung und verfahren zur vermessung eines substrats |
US11243273B2 (en) | 2020-03-16 | 2022-02-08 | KW Associates LLC | Estimation or control of lengths and positions of one or more transversely localized electric current segments flowing between two conductive bodies |
US11156566B2 (en) * | 2020-03-26 | 2021-10-26 | Applied Materials, Inc. | High sensitivity image-based reflectometry |
US11150078B1 (en) | 2020-03-26 | 2021-10-19 | Applied Materials, Inc. | High sensitivity image-based reflectometry |
US11417010B2 (en) | 2020-05-19 | 2022-08-16 | Applied Materials, Inc. | Image based metrology of surface deformations |
US11762043B2 (en) | 2021-03-11 | 2023-09-19 | Allegro Microsystems, Llc | High resolution magnetic field sensors |
KR20230009611A (ko) * | 2021-07-09 | 2023-01-17 | 삼성전자주식회사 | 기준 시편을 갖는 검사 시스템 및 반도체 소자 형성 방법 |
US11781999B2 (en) | 2021-09-05 | 2023-10-10 | Bruker Technologies Ltd. | Spot-size control in reflection-based and scatterometry-based X-ray metrology systems |
IL294457B2 (en) * | 2022-06-30 | 2023-12-01 | Nova Ltd | Systems and methods for optical measurement of sample properties using polarized rays. |
Family Cites Families (50)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US499014A (en) * | 1893-06-06 | doane | ||
JPS60708B2 (ja) * | 1979-11-07 | 1985-01-09 | 株式会社東芝 | 欠陥検査装置 |
JPS5712352A (en) * | 1980-06-26 | 1982-01-22 | Hajime Sangyo Kk | Light diffusion device |
US4598997A (en) | 1982-02-15 | 1986-07-08 | Rca Corporation | Apparatus and method for detecting defects and dust on a patterned surface |
US4710642A (en) | 1985-08-20 | 1987-12-01 | Mcneil John R | Optical scatterometer having improved sensitivity and bandwidth |
FR2615644B1 (fr) | 1987-05-18 | 1989-06-30 | Brunel Christian | Dispositif d'affichage electroluminescent a effet memoire et a demi-teintes |
US4999014A (en) * | 1989-05-04 | 1991-03-12 | Therma-Wave, Inc. | Method and apparatus for measuring thickness of thin films |
US5241369A (en) * | 1990-10-01 | 1993-08-31 | Mcneil John R | Two-dimensional optical scatterometer apparatus and process |
US5438414A (en) * | 1993-01-22 | 1995-08-01 | The Johns Hopkins University | Integrated dual imaging detector |
JP2943132B2 (ja) * | 1994-10-27 | 1999-08-30 | 三井化学株式会社 | 灌水ホース |
FR2729220B1 (fr) * | 1995-01-06 | 1997-04-04 | Eldim | Dispositif de mesure colorimetrique d'un ecran d'affichage |
EP0805947A4 (de) | 1995-01-24 | 1999-10-20 | Massachusetts Inst Technology | Optisches verfahren und vorrichtung für zeitaufgelöste messungen |
US5706091A (en) * | 1995-04-28 | 1998-01-06 | Nikon Corporation | Apparatus for detecting a mark pattern on a substrate |
JP2725632B2 (ja) * | 1995-05-24 | 1998-03-11 | 日本電気株式会社 | 光ヘッド装置 |
US5703692A (en) * | 1995-08-03 | 1997-12-30 | Bio-Rad Laboratories, Inc. | Lens scatterometer system employing source light beam scanning means |
US6373573B1 (en) | 2000-03-13 | 2002-04-16 | Lj Laboratories L.L.C. | Apparatus for measuring optical characteristics of a substrate and pigments applied thereto |
FR2749388B1 (fr) | 1996-05-31 | 1998-08-07 | Eldim | Appareil de mesure des caracteristiques photometriques et colorimetriques d'un objet |
US5877859A (en) * | 1996-07-24 | 1999-03-02 | Therma-Wave, Inc. | Broadband spectroscopic rotating compensator ellipsometer |
US5771094A (en) | 1997-01-29 | 1998-06-23 | Kla-Tencor Corporation | Film measurement system with improved calibration |
US5889593A (en) * | 1997-02-26 | 1999-03-30 | Kla Instruments Corporation | Optical system and method for angle-dependent reflection or transmission measurement |
US5867276A (en) | 1997-03-07 | 1999-02-02 | Bio-Rad Laboratories, Inc. | Method for broad wavelength scatterometry |
DE19717488C2 (de) * | 1997-04-25 | 2003-05-15 | Baumer Optronic Gmbh | Vorrichtung zur Inspektion der Oberfläche von Objekten |
FR2777653B1 (fr) * | 1998-04-20 | 2000-06-30 | Eldim | Systeme de mesure des caracteristiques de luminance d'objets, notamment d'objets a luminance dependante de la direction d'emission |
US6137570A (en) * | 1998-06-30 | 2000-10-24 | Kla-Tencor Corporation | System and method for analyzing topological features on a surface |
FR2800163B1 (fr) | 1999-10-26 | 2002-01-18 | Eldim | Dispositif de mesure de la repartition spatiale de l'emission spectrale d'un objet |
US6429943B1 (en) * | 2000-03-29 | 2002-08-06 | Therma-Wave, Inc. | Critical dimension analysis with simultaneous multiple angle of incidence measurements |
JP2002032737A (ja) | 2000-07-14 | 2002-01-31 | Seiko Instruments Inc | 半導体装置のパターン観察のためのナビゲーション方法及び装置 |
JP2002031525A (ja) | 2000-07-14 | 2002-01-31 | Seiko Instruments Inc | 半導体ウエハのパターン形状評価方法及び装置 |
JP3858571B2 (ja) * | 2000-07-27 | 2006-12-13 | 株式会社日立製作所 | パターン欠陥検査方法及びその装置 |
US6812045B1 (en) * | 2000-09-20 | 2004-11-02 | Kla-Tencor, Inc. | Methods and systems for determining a characteristic of a specimen prior to, during, or subsequent to ion implantation |
US6750968B2 (en) * | 2000-10-03 | 2004-06-15 | Accent Optical Technologies, Inc. | Differential numerical aperture methods and device |
FR2818376B1 (fr) | 2000-12-18 | 2003-03-28 | Centre Nat Rech Scient | Dispositif de visualisation bidimensionnelle ellipsometrique d'un echantillon, procede de visualisation et procede de mesure ellipsometrique avec resolution spatiale |
US6895075B2 (en) * | 2003-02-12 | 2005-05-17 | Jordan Valley Applied Radiation Ltd. | X-ray reflectometry with small-angle scattering measurement |
US6734419B1 (en) * | 2001-06-28 | 2004-05-11 | Amkor Technology, Inc. | Method for forming an image sensor package with vision die in lens housing |
US7006221B2 (en) | 2001-07-13 | 2006-02-28 | Rudolph Technologies, Inc. | Metrology system with spectroscopic ellipsometer and photoacoustic measurements |
US6862090B2 (en) * | 2001-08-09 | 2005-03-01 | Therma-Wave, Inc. | Coaxial illumination system |
US6940592B2 (en) * | 2001-10-09 | 2005-09-06 | Applied Materials, Inc. | Calibration as well as measurement on the same workpiece during fabrication |
WO2003032085A2 (en) * | 2001-10-10 | 2003-04-17 | Accent Optical Technologies, Inc. | Determination of center of focus by cross-section analysis |
US7061614B2 (en) * | 2001-10-16 | 2006-06-13 | Therma-Wave, Inc. | Measurement system with separate optimized beam paths |
WO2003079675A1 (fr) * | 2002-03-20 | 2003-09-25 | Sony Corporation | Dispositif capteur d'image a semiconducteurs et son procede d'attaque |
US6890773B1 (en) | 2002-04-19 | 2005-05-10 | Advanced Micro Devices, Inc. | Dynamic maintenance of manufacturing system components |
JP2004104078A (ja) * | 2002-06-28 | 2004-04-02 | Sanyo Electric Co Ltd | カメラモジュールおよびその製造方法 |
US7046376B2 (en) * | 2002-07-05 | 2006-05-16 | Therma-Wave, Inc. | Overlay targets with isolated, critical-dimension features and apparatus to measure overlay |
FR2859781B1 (fr) | 2003-09-17 | 2007-07-06 | Commissariat Energie Atomique | Utilisation de la transformee de fourier optique pour le controle dimensionnel en microelectronique |
US7035375B2 (en) * | 2003-11-05 | 2006-04-25 | Jordan Valley Applied Radiation Ltd. | X-ray scattering with a polychromatic source |
US7295303B1 (en) * | 2004-03-25 | 2007-11-13 | Kla-Tencor Technologies Corporation | Methods and apparatus for inspecting a sample |
US7791727B2 (en) | 2004-08-16 | 2010-09-07 | Asml Netherlands B.V. | Method and apparatus for angular-resolved spectroscopic lithography characterization |
DE102004063532A1 (de) | 2004-12-30 | 2006-07-27 | Advanced Micro Devices, Inc., Sunnyvale | Verfahren zur Herstellung von Gateisolationsschichten mit unterschiedlichen Eigenschaften |
WO2006091913A1 (en) | 2005-02-25 | 2006-08-31 | Nanometrics Incorporated | Apparatus and method for enhanced critical dimension scatterometry |
WO2006110535A2 (en) | 2005-04-07 | 2006-10-19 | Nanometrics Incorporated | Apparatus and methods for scatterometry of optical devices |
-
2006
- 2006-02-24 WO PCT/US2006/006775 patent/WO2006091913A1/en active Application Filing
- 2006-02-24 WO PCT/US2006/006538 patent/WO2006091783A1/en active Application Filing
- 2006-02-24 US US11/361,670 patent/US20060285110A1/en not_active Abandoned
- 2006-02-24 WO PCT/US2006/006537 patent/WO2006091782A1/en active Application Filing
- 2006-02-24 EP EP06735920A patent/EP1864080B1/de active Active
- 2006-02-24 US US11/361,677 patent/US20060289790A1/en not_active Abandoned
- 2006-02-24 WO PCT/US2006/006643 patent/WO2006091840A2/en active Application Filing
- 2006-02-24 AT AT06735920T patent/ATE475862T1/de not_active IP Right Cessation
- 2006-02-24 US US11/361,669 patent/US20060289788A1/en not_active Abandoned
- 2006-02-24 WO PCT/US2006/006449 patent/WO2006093800A1/en active Application Filing
- 2006-02-24 WO PCT/US2006/006536 patent/WO2006091781A1/en active Application Filing
- 2006-02-24 US US11/361,710 patent/US7615752B2/en active Active
- 2006-02-24 US US11/361,673 patent/US7502101B2/en active Active
- 2006-02-24 US US11/361,309 patent/US7511293B2/en active Active
- 2006-02-24 DE DE602006015785T patent/DE602006015785D1/de active Active
- 2006-02-24 US US11/361,308 patent/US20060273263A1/en not_active Abandoned
- 2006-02-24 WO PCT/US2006/006679 patent/WO2006091859A1/en active Application Filing
- 2006-06-14 US US11/453,463 patent/US20060285111A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
WO2006091840A2 (en) | 2006-08-31 |
EP1864080A1 (de) | 2007-12-12 |
WO2006091840A9 (en) | 2006-12-28 |
WO2006091913A1 (en) | 2006-08-31 |
US20060289789A1 (en) | 2006-12-28 |
US20060285110A1 (en) | 2006-12-21 |
WO2006091840B1 (en) | 2006-11-16 |
WO2006091859A1 (en) | 2006-08-31 |
WO2006091781B1 (en) | 2006-11-09 |
US20060289790A1 (en) | 2006-12-28 |
WO2006091782A1 (en) | 2006-08-31 |
WO2006091840A3 (en) | 2006-10-19 |
WO2006091781A1 (en) | 2006-08-31 |
US7615752B2 (en) | 2009-11-10 |
US20060289788A1 (en) | 2006-12-28 |
US7502101B2 (en) | 2009-03-10 |
EP1864080B1 (de) | 2010-07-28 |
WO2006093800A9 (en) | 2007-03-01 |
US20060273263A1 (en) | 2006-12-07 |
US20060243912A1 (en) | 2006-11-02 |
ATE475862T1 (de) | 2010-08-15 |
US7511293B2 (en) | 2009-03-31 |
WO2006093800A1 (en) | 2006-09-08 |
US20060278834A1 (en) | 2006-12-14 |
WO2006091782B1 (en) | 2006-11-23 |
WO2006091783A1 (en) | 2006-08-31 |
US20060285111A1 (en) | 2006-12-21 |
WO2006091783B1 (en) | 2006-10-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE602006015785D1 (de) | L-dimension-scatterometrie | |
HUP0301913A2 (hu) | Csökkentett fényszóró hatású, ultrafób felülettel rendelkezż szubsztrátum és eljárás az elżállítására | |
BRPI0506124A (pt) | método para formar um revestimento selável termicamente em um substrato, camada de pelìcula e artigo | |
ATE511420T1 (de) | Schneidwerkzeug mit vorsprüngen und verwendungsverfahren dafür | |
BRPI0909056A2 (pt) | artigo refletivo | |
DE602006001850D1 (de) | Rstellungsverfahren dafür | |
DE602007005311D1 (de) | Knochenplatte | |
DE602006020416D1 (de) | Hren dafür | |
WO2008004198A3 (en) | Water-soluble substrate with resistance to dissolution prior to being immersed in water | |
BRPI0410024A (pt) | uso de compostos para rosca com base em sulfonato de cálcio em operações de drenagem e outras aplicações industriais severas | |
TW200715556A (en) | Electronic device with a gate electrode having at least two portions and a process for forming the electronic device | |
BR112019004688A2 (pt) | elemento de cobertura de concreto para uma construção de quebra-mar ou píer, e, construção de quebra-mar ou píer. | |
MA27722A1 (fr) | Petit bloc indicateur | |
JP2009138229A5 (de) | ||
AR065026A1 (es) | Composicion de carga bactericida | |
ATE451663T1 (de) | Dokument mit einem elektronischen gerät | |
DE602006005832D1 (de) | Klettverschlüsse | |
DE60136552D1 (de) | Temporäre schutzverkleidungen | |
ATE529904T1 (de) | Verfahren zur herstellung eines elektronischen bauelements | |
TW200710920A (en) | Microstructure and manufacturing method thereof | |
BR112016006705A2 (pt) | artigos de filme estruturados de dupla face | |
ATE494325T1 (de) | Trockenemulsion, herstellungsverfahren dafür und durch dispergieren der trockenemulsion in wasser erhaltene o/w-emulsion | |
TW200611360A (en) | Methods and structures for critical dimension and profile measurement | |
GB2441553A (en) | A spirit level aided rule | |
TW200639948A (en) | Method to produce round polysilicon-electrodes on semiconductor components |