DE602006019061D1 - Begrenzt umprogrammierbare zelle auf snse-basis - Google Patents

Begrenzt umprogrammierbare zelle auf snse-basis

Info

Publication number
DE602006019061D1
DE602006019061D1 DE602006019061T DE602006019061T DE602006019061D1 DE 602006019061 D1 DE602006019061 D1 DE 602006019061D1 DE 602006019061 T DE602006019061 T DE 602006019061T DE 602006019061 T DE602006019061 T DE 602006019061T DE 602006019061 D1 DE602006019061 D1 DE 602006019061D1
Authority
DE
Germany
Prior art keywords
snmp
limits
programmable cell
based programmable
cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602006019061T
Other languages
English (en)
Inventor
Kristy A Campbell
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micron Technology Inc
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Publication of DE602006019061D1 publication Critical patent/DE602006019061D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0011—RRAM elements whose operation depends upon chemical change comprising conductive bridging RAM [CBRAM] or programming metallization cells [PMCs]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
    • H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Patterning of the switching material
    • H10N70/063—Patterning of the switching material by etching of pre-deposited switching material layers, e.g. lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8825—Selenides, e.g. GeSe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/009—Write using potential difference applied between cell electrodes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/50—Resistive cell structure aspects
    • G11C2213/56—Structure including two electrodes, a memory active layer and a so called passive or source or reservoir layer which is NOT an electrode, wherein the passive or source or reservoir layer is a source of ions which migrate afterwards in the memory active layer to be only trapped there, to form conductive filaments there or to react with the material of the memory active layer in redox way
DE602006019061T 2005-02-23 2006-02-17 Begrenzt umprogrammierbare zelle auf snse-basis Active DE602006019061D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/062,436 US7317200B2 (en) 2005-02-23 2005-02-23 SnSe-based limited reprogrammable cell
PCT/US2006/005618 WO2006091480A1 (en) 2005-02-23 2006-02-17 Snse-based limited reprogrammable cell

Publications (1)

Publication Number Publication Date
DE602006019061D1 true DE602006019061D1 (de) 2011-02-03

Family

ID=36570573

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602006019061T Active DE602006019061D1 (de) 2005-02-23 2006-02-17 Begrenzt umprogrammierbare zelle auf snse-basis

Country Status (7)

Country Link
US (2) US7317200B2 (de)
EP (1) EP1851809B1 (de)
JP (1) JP5327576B2 (de)
KR (1) KR100918168B1 (de)
CN (1) CN101180746B (de)
DE (1) DE602006019061D1 (de)
WO (1) WO2006091480A1 (de)

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FR2922368A1 (fr) * 2007-10-16 2009-04-17 Commissariat Energie Atomique Procede de fabrication d'une memoire cbram ayant une fiabilite amelioree
US8594133B2 (en) 2007-10-22 2013-11-26 Corning Mobileaccess Ltd. Communication system using low bandwidth wires
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US8467236B2 (en) 2008-08-01 2013-06-18 Boise State University Continuously variable resistor
US8238146B2 (en) * 2008-08-01 2012-08-07 Boise State University Variable integrated analog resistor
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US20110079709A1 (en) * 2009-10-07 2011-04-07 Campbell Kristy A Wide band sensor
JP5549333B2 (ja) 2010-04-07 2014-07-16 富士通株式会社 偏波変動補償装置および光通信システム
US8284590B2 (en) 2010-05-06 2012-10-09 Boise State University Integratable programmable capacitive device
US8828788B2 (en) * 2010-05-11 2014-09-09 Micron Technology, Inc. Forming electrodes for chalcogenide containing devices
US8735862B2 (en) * 2011-04-11 2014-05-27 Micron Technology, Inc. Memory cells, methods of forming memory cells and methods of forming memory arrays
EP2829152A2 (de) 2012-03-23 2015-01-28 Corning Optical Communications Wireless Ltd. Rfic-chip(s) zur bereitstellung von funktionalitäten eines verteilten antennensystems sowie entsprechende komponenten, systeme und verfahren
KR101431656B1 (ko) * 2013-04-05 2014-08-21 한국과학기술연구원 저머늄 및 셀레늄을 이용한 칼코지나이드 스위칭 소자 및 그 제조방법
US9184960B1 (en) 2014-09-25 2015-11-10 Corning Optical Communications Wireless Ltd Frequency shifting a communications signal(s) in a multi-frequency distributed antenna system (DAS) to avoid or reduce frequency interference
US10002922B1 (en) * 2016-12-14 2018-06-19 Taiwan Semiconductor Manufacturing Company Process to etch semiconductor materials
US10700226B2 (en) * 2017-05-25 2020-06-30 Boise State University Optically activated transistor, switch, and photodiode
US11316484B2 (en) * 2017-05-25 2022-04-26 Boise State University Optically gated transistor selector for variable resistive memory device

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US20060186394A1 (en) 2006-08-24
KR100918168B1 (ko) 2009-09-17
CN101180746B (zh) 2010-09-15
JP5327576B2 (ja) 2013-10-30
US8101936B2 (en) 2012-01-24
US20080067489A1 (en) 2008-03-20
WO2006091480A1 (en) 2006-08-31
US7317200B2 (en) 2008-01-08
EP1851809A1 (de) 2007-11-07
EP1851809B1 (de) 2010-12-22
JP2008532285A (ja) 2008-08-14
KR20070114156A (ko) 2007-11-29

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