DE602007000624D1 - Verfahren und Vorrichtung zur Charakterisierung von winkelaufgelöster spektroskopischer Lithografie - Google Patents

Verfahren und Vorrichtung zur Charakterisierung von winkelaufgelöster spektroskopischer Lithografie

Info

Publication number
DE602007000624D1
DE602007000624D1 DE602007000624T DE602007000624T DE602007000624D1 DE 602007000624 D1 DE602007000624 D1 DE 602007000624D1 DE 602007000624 T DE602007000624 T DE 602007000624T DE 602007000624 T DE602007000624 T DE 602007000624T DE 602007000624 D1 DE602007000624 D1 DE 602007000624D1
Authority
DE
Germany
Prior art keywords
characterization
angle
resolved spectroscopic
lithography
spectroscopic lithography
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602007000624T
Other languages
English (en)
Inventor
Antoine Gaston Marie Kiers
Boef Arie Jeffrey Den
Stefan Carolus Jacobus Antonius Keij
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASML Netherlands BV
Original Assignee
ASML Netherlands BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASML Netherlands BV filed Critical ASML Netherlands BV
Publication of DE602007000624D1 publication Critical patent/DE602007000624D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274Photolithographic processes
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/21Polarisation-affecting properties
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956Inspecting patterns on the surface of objects
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2002Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G03F7/2006Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light using coherent light; using polarised light
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
    • G03F7/70616Monitoring the printed patterns
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
DE602007000624T 2006-06-22 2007-06-11 Verfahren und Vorrichtung zur Charakterisierung von winkelaufgelöster spektroskopischer Lithografie Active DE602007000624D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/472,565 US7692792B2 (en) 2006-06-22 2006-06-22 Method and apparatus for angular-resolved spectroscopic lithography characterization

Publications (1)

Publication Number Publication Date
DE602007000624D1 true DE602007000624D1 (de) 2009-04-16

Family

ID=38325494

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602007000624T Active DE602007000624D1 (de) 2006-06-22 2007-06-11 Verfahren und Vorrichtung zur Charakterisierung von winkelaufgelöster spektroskopischer Lithografie

Country Status (8)

Country Link
US (1) US7692792B2 (de)
EP (1) EP1870696B1 (de)
JP (1) JP4953932B2 (de)
KR (1) KR100903831B1 (de)
CN (1) CN101093362B (de)
DE (1) DE602007000624D1 (de)
SG (1) SG138566A1 (de)
TW (1) TWI362570B (de)

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DE102013224435A1 (de) * 2013-11-28 2015-05-28 Carl Zeiss Smt Gmbh Messanordnung zur Messung optischer Eigenschaften eines reflektiven optischen Elements, insbesondere für die Mikrolithographie
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CN105807580B (zh) * 2014-12-31 2019-12-24 上海微电子装备(集团)股份有限公司 一种工件六自由度位置和姿态测量传感器装置
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CN104748684B (zh) * 2015-04-13 2017-04-05 北方工业大学 一种曲轴轴肩清根的视觉检测方法及装置
CN106483777B (zh) * 2015-08-31 2018-06-26 上海微电子装备(集团)股份有限公司 一种具有调焦功能的对准系统及对准方法
US10078269B2 (en) * 2015-10-02 2018-09-18 Nikon Corporation Array of encoders for alignment measurement
US10048132B2 (en) * 2016-07-28 2018-08-14 Kla-Tencor Corporation Simultaneous capturing of overlay signals from multiple targets
KR101898217B1 (ko) 2016-12-29 2018-09-12 엘지디스플레이 주식회사 검사장비 및 이를 이용한 검사방법
EP3454124A1 (de) 2017-09-07 2019-03-13 ASML Netherlands B.V. Verfahren zur bestimmung eines strukturierungsverfahrensparameters
CN109840984B (zh) * 2017-11-28 2020-12-25 南京造币有限公司 一种硬币表面质量检查系统、方法和装置
KR102436448B1 (ko) 2017-12-13 2022-08-24 에이에스엠엘 홀딩 엔.브이. 빔 분할 프리즘 시스템
IL277639B2 (en) * 2018-04-06 2023-10-01 Asml Netherlands Bv Test device with non-linear optics
KR20220031834A (ko) 2020-09-04 2022-03-14 삼성전자주식회사 멀티 스케일의 스펙트럼 이미징 장치 및 방법, 및 그 방법을 이용한 반도체 소자 제조방법
CN114459619B (zh) * 2022-01-27 2023-08-08 华南师范大学 一种相移量实时在线测量装置及方法

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Also Published As

Publication number Publication date
SG138566A1 (en) 2008-01-28
JP2008042177A (ja) 2008-02-21
CN101093362B (zh) 2012-02-15
TWI362570B (en) 2012-04-21
EP1870696B1 (de) 2009-03-04
EP1870696A1 (de) 2007-12-26
KR100903831B1 (ko) 2009-06-25
KR20070121565A (ko) 2007-12-27
TW200807180A (en) 2008-02-01
US20070296973A1 (en) 2007-12-27
CN101093362A (zh) 2007-12-26
JP4953932B2 (ja) 2012-06-13
US7692792B2 (en) 2010-04-06

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