DE602007004139D1 - Verfahren zum Herstellen eines Transistors mit einem Germanium enthaltenden Kanal - Google Patents

Verfahren zum Herstellen eines Transistors mit einem Germanium enthaltenden Kanal

Info

Publication number
DE602007004139D1
DE602007004139D1 DE602007004139T DE602007004139T DE602007004139D1 DE 602007004139 D1 DE602007004139 D1 DE 602007004139D1 DE 602007004139 T DE602007004139 T DE 602007004139T DE 602007004139 T DE602007004139 T DE 602007004139T DE 602007004139 D1 DE602007004139 D1 DE 602007004139D1
Authority
DE
Germany
Prior art keywords
germanium
transistor
producing
containing channel
channel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602007004139T
Other languages
English (en)
Inventor
Stephane Monfray
Thomas Skotnicki
Didier Dutartre
Alexandre Talbot
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
STMicroelectronics Crolles 2 SAS
Original Assignee
STMicroelectronics SA
STMicroelectronics Crolles 2 SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA, STMicroelectronics Crolles 2 SAS filed Critical STMicroelectronics SA
Publication of DE602007004139D1 publication Critical patent/DE602007004139D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78684—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66613—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation
    • H01L29/66628—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation recessing the gate by forming single crystalline semiconductor material at the source or drain location
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/66772—Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates
DE602007004139T 2006-03-21 2007-03-16 Verfahren zum Herstellen eines Transistors mit einem Germanium enthaltenden Kanal Active DE602007004139D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0602467A FR2899017A1 (fr) 2006-03-21 2006-03-21 Procede de realisation d'un transistor a canal comprenant du germanium

Publications (1)

Publication Number Publication Date
DE602007004139D1 true DE602007004139D1 (de) 2010-02-25

Family

ID=37453270

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602007004139T Active DE602007004139D1 (de) 2006-03-21 2007-03-16 Verfahren zum Herstellen eines Transistors mit einem Germanium enthaltenden Kanal

Country Status (5)

Country Link
US (1) US7892927B2 (de)
EP (1) EP1837916B1 (de)
JP (1) JP2007258715A (de)
DE (1) DE602007004139D1 (de)
FR (1) FR2899017A1 (de)

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FR2922361A1 (fr) * 2007-10-12 2009-04-17 Commissariat Energie Atomique Procede de realisation d'un dispositif a effet de champ a canal germanium sur isolant.
DE102009010883B4 (de) * 2009-02-27 2011-05-26 Amd Fab 36 Limited Liability Company & Co. Kg Einstellen eines nicht-Siliziumanteils in einer Halbleiterlegierung während der FET-Transistorherstellung mittels eines Zwischenoxidationsprozesses
US8546228B2 (en) 2010-06-16 2013-10-01 International Business Machines Corporation Strained thin body CMOS device having vertically raised source/drain stressors with single spacer
DE102010064290B3 (de) * 2010-12-28 2012-04-19 GLOBALFOUNDRIES Dresden Module One Ltd. Liability Company & Co. KG Verformungserhöhung in Transistoren mit einem eingebetteten verformungsinduzierenden Halbleitermaterial durch Kondensation der legierungsbildenden Substanz
US8828851B2 (en) * 2012-02-01 2014-09-09 Stmicroeletronics, Inc. Method to enable the formation of silicon germanium channel of FDSOI devices for PFET threshold voltage engineering
US9245882B2 (en) * 2013-09-27 2016-01-26 Taiwan Semiconductor Manufacturing Company, Ltd. FinFETs with gradient germanium-containing channels
HRP20221282T1 (hr) 2017-06-28 2022-12-23 Corning Research & Development Corporation Višestruki priključci koji imaju spojne priključke sa ključevima i sigurnosne značajke
US11668890B2 (en) 2017-06-28 2023-06-06 Corning Research & Development Corporation Multiports and other devices having optical connection ports with securing features and methods of making the same
US11300746B2 (en) 2017-06-28 2022-04-12 Corning Research & Development Corporation Fiber optic port module inserts, assemblies and methods of making the same
US10359577B2 (en) 2017-06-28 2019-07-23 Corning Research & Development Corporation Multiports and optical connectors with rotationally discrete locking and keying features
MX2021006541A (es) 2018-12-06 2021-09-21 Corning Res & Dev Corp Cable de cintas de fibra óptica de alta densidad.
AU2020257284C1 (en) 2019-04-18 2024-04-18 Corning Research & Development Corporation Foam for optical fiber cable, composition, and method of manufacturing
US11294133B2 (en) 2019-07-31 2022-04-05 Corning Research & Development Corporation Fiber optic networks using multiports and cable assemblies with cable-to-connector orientation
US11487073B2 (en) 2019-09-30 2022-11-01 Corning Research & Development Corporation Cable input devices having an integrated locking feature and assemblies using the cable input devices
EP3805827A1 (de) 2019-10-07 2021-04-14 Corning Research & Development Corporation Faseroptische anschlüsse und faseroptische netzwerke mit kopplern mit variablem verhältnis
US11650388B2 (en) 2019-11-14 2023-05-16 Corning Research & Development Corporation Fiber optic networks having a self-supporting optical terminal and methods of installing the optical terminal
US11536921B2 (en) 2020-02-11 2022-12-27 Corning Research & Development Corporation Fiber optic terminals having one or more loopback assemblies
US11604320B2 (en) 2020-09-30 2023-03-14 Corning Research & Development Corporation Connector assemblies for telecommunication enclosures
US11686913B2 (en) 2020-11-30 2023-06-27 Corning Research & Development Corporation Fiber optic cable assemblies and connector assemblies having a crimp ring and crimp body and methods of fabricating the same
US11927810B2 (en) 2020-11-30 2024-03-12 Corning Research & Development Corporation Fiber optic adapter assemblies including a conversion housing and a release member
US11880076B2 (en) 2020-11-30 2024-01-23 Corning Research & Development Corporation Fiber optic adapter assemblies including a conversion housing and a release housing
US11947167B2 (en) 2021-05-26 2024-04-02 Corning Research & Development Corporation Fiber optic terminals and tools and methods for adjusting a split ratio of a fiber optic terminal

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US6433382B1 (en) * 1995-04-06 2002-08-13 Motorola, Inc. Split-gate vertically oriented EEPROM device and process
FR2795555B1 (fr) * 1999-06-28 2002-12-13 France Telecom Procede de fabrication d'un dispositif semi-conducteur comprenant un empilement forme alternativement de couches de silicium et de couches de materiau dielectrique
JP2001338988A (ja) * 2000-05-25 2001-12-07 Hitachi Ltd 半導体装置及びその製造方法
US6723661B2 (en) * 2001-03-02 2004-04-20 Amberwave Systems Corporation Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
KR100553683B1 (ko) * 2003-05-02 2006-02-24 삼성전자주식회사 반도체 소자 및 그 제조 방법
US7176041B2 (en) * 2003-07-01 2007-02-13 Samsung Electronics Co., Ltd. PAA-based etchant, methods of using same, and resultant structures
US7095065B2 (en) * 2003-08-05 2006-08-22 Advanced Micro Devices, Inc. Varying carrier mobility in semiconductor devices to achieve overall design goals
US7029980B2 (en) * 2003-09-25 2006-04-18 Freescale Semiconductor Inc. Method of manufacturing SOI template layer
US6949761B2 (en) * 2003-10-14 2005-09-27 International Business Machines Corporation Structure for and method of fabricating a high-mobility field-effect transistor
US7057216B2 (en) * 2003-10-31 2006-06-06 International Business Machines Corporation High mobility heterojunction complementary field effect transistors and methods thereof
KR100605497B1 (ko) * 2003-11-27 2006-07-28 삼성전자주식회사 에스오아이 기판들을 제조하는 방법들, 이를 사용하여반도체 소자들을 제조하는 방법들 및 그에 의해 제조된반도체 소자들
US7037794B2 (en) * 2004-06-09 2006-05-02 International Business Machines Corporation Raised STI process for multiple gate ox and sidewall protection on strained Si/SGOI structure with elevated source/drain
JP2006128428A (ja) * 2004-10-29 2006-05-18 Seiko Epson Corp 半導体基板、半導体装置、半導体基板の製造方法および半導体装置の製造方法
JP2008541421A (ja) * 2005-05-03 2008-11-20 エヌエックスピー ビー ヴィ 半導体デバイスの製造方法および該製造方法により得られた半導体デバイス

Also Published As

Publication number Publication date
EP1837916A1 (de) 2007-09-26
US20080020532A1 (en) 2008-01-24
FR2899017A1 (fr) 2007-09-28
EP1837916B1 (de) 2010-01-06
JP2007258715A (ja) 2007-10-04
US7892927B2 (en) 2011-02-22

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