DE60212987D1 - Vorrichtung zur schnellen, quantitativen, kontaktlosen topografischen untersuchung von halbleiterscheiben oder spiegelähnlichen oberflächen - Google Patents

Vorrichtung zur schnellen, quantitativen, kontaktlosen topografischen untersuchung von halbleiterscheiben oder spiegelähnlichen oberflächen

Info

Publication number
DE60212987D1
DE60212987D1 DE60212987T DE60212987T DE60212987D1 DE 60212987 D1 DE60212987 D1 DE 60212987D1 DE 60212987 T DE60212987 T DE 60212987T DE 60212987 T DE60212987 T DE 60212987T DE 60212987 D1 DE60212987 D1 DE 60212987D1
Authority
DE
Germany
Prior art keywords
quantitative
fast
mirror
mask
contactless
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60212987T
Other languages
English (en)
Other versions
DE60212987T2 (de
Inventor
Endre Lukacs
Janos Makai
Ferenc Riesz
Bela Szentpali
Lothar Pfitzner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
HUNGARIAN ACADEMY OF SCIENCES
Original Assignee
Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
HUNGARIAN ACADEMY OF SCIENCES
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV, HUNGARIAN ACADEMY OF SCIENCES filed Critical Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Application granted granted Critical
Publication of DE60212987D1 publication Critical patent/DE60212987D1/de
Publication of DE60212987T2 publication Critical patent/DE60212987T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00Measuring arrangements characterised by the use of optical techniques
    • G01B11/30Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces
    • G01B11/303Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces using photoelectric detection means
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501Semiconductor wafers
DE60212987T 2001-10-02 2002-10-01 Vorrichtung zur schnellen, quantitativen, kontaktlosen topografischen Untersuchung von Halbleiterscheiben oder spiegelähnlichen Oberflächen Expired - Lifetime DE60212987T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
HU0104057 2001-10-02
HU0104057A HUP0104057A2 (hu) 2001-10-02 2001-10-02 Mérési elrendezés és eljárás félvezető szeletek és más tükörjellegű felületek érintésmentes, gyors kvantitatív topográfiai vizsgálatára
PCT/EP2002/011011 WO2003031955A1 (en) 2001-10-02 2002-10-01 Apparatus and measurement procedure for the fast, quantitative, non-contact topographic investigation of semiconductor wafers and other mirror like surfaces

Publications (2)

Publication Number Publication Date
DE60212987D1 true DE60212987D1 (de) 2006-08-17
DE60212987T2 DE60212987T2 (de) 2007-09-06

Family

ID=89979741

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60212987T Expired - Lifetime DE60212987T2 (de) 2001-10-02 2002-10-01 Vorrichtung zur schnellen, quantitativen, kontaktlosen topografischen Untersuchung von Halbleiterscheiben oder spiegelähnlichen Oberflächen

Country Status (6)

Country Link
US (1) US7133140B2 (de)
EP (1) EP1434981B1 (de)
AT (1) ATE332498T1 (de)
DE (1) DE60212987T2 (de)
HU (1) HUP0104057A2 (de)
WO (1) WO2003031955A1 (de)

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US7312616B2 (en) 2006-01-20 2007-12-25 Cypress Semiconductor Corporation Successive approximate capacitance measurement circuit
US8067948B2 (en) 2006-03-27 2011-11-29 Cypress Semiconductor Corporation Input/output multiplexer bus
US8144125B2 (en) 2006-03-30 2012-03-27 Cypress Semiconductor Corporation Apparatus and method for reducing average scan rate to detect a conductive object on a sensing device
US7721609B2 (en) 2006-03-31 2010-05-25 Cypress Semiconductor Corporation Method and apparatus for sensing the force with which a button is pressed
US8040142B1 (en) 2006-03-31 2011-10-18 Cypress Semiconductor Corporation Touch detection techniques for capacitive touch sense systems
US8089472B2 (en) 2006-05-26 2012-01-03 Cypress Semiconductor Corporation Bidirectional slider with delete function
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US9507465B2 (en) 2006-07-25 2016-11-29 Cypress Semiconductor Corporation Technique for increasing the sensitivity of capacitive sensor arrays
US9766738B1 (en) 2006-08-23 2017-09-19 Cypress Semiconductor Corporation Position and usage based prioritization for capacitance sense interface
US8547114B2 (en) 2006-11-14 2013-10-01 Cypress Semiconductor Corporation Capacitance to code converter with sigma-delta modulator
US8089288B1 (en) 2006-11-16 2012-01-03 Cypress Semiconductor Corporation Charge accumulation capacitance sensor with linear transfer characteristic
US8058937B2 (en) 2007-01-30 2011-11-15 Cypress Semiconductor Corporation Setting a discharge rate and a charge rate of a relaxation oscillator circuit
US7737724B2 (en) 2007-04-17 2010-06-15 Cypress Semiconductor Corporation Universal digital block interconnection and channel routing
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US9564902B2 (en) 2007-04-17 2017-02-07 Cypress Semiconductor Corporation Dynamically configurable and re-configurable data path
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US8487912B1 (en) 2008-02-01 2013-07-16 Cypress Semiconductor Corporation Capacitive sense touch device with hysteresis threshold
US8319505B1 (en) 2008-10-24 2012-11-27 Cypress Semiconductor Corporation Methods and circuits for measuring mutual and self capacitance
US8358142B2 (en) 2008-02-27 2013-01-22 Cypress Semiconductor Corporation Methods and circuits for measuring mutual and self capacitance
US9104273B1 (en) 2008-02-29 2015-08-11 Cypress Semiconductor Corporation Multi-touch sensing method
US8321174B1 (en) 2008-09-26 2012-11-27 Cypress Semiconductor Corporation System and method to measure capacitance of capacitive sensor array
US8487639B1 (en) 2008-11-21 2013-07-16 Cypress Semiconductor Corporation Receive demodulator for capacitive sensing
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US8866500B2 (en) 2009-03-26 2014-10-21 Cypress Semiconductor Corporation Multi-functional capacitance sensing circuit with a current conveyor
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Also Published As

Publication number Publication date
DE60212987T2 (de) 2007-09-06
HUP0104057A2 (hu) 2003-06-28
EP1434981A1 (de) 2004-07-07
WO2003031955A1 (en) 2003-04-17
HU0104057D0 (en) 2001-11-28
US20040263864A1 (en) 2004-12-30
US7133140B2 (en) 2006-11-07
ATE332498T1 (de) 2006-07-15
EP1434981B1 (de) 2006-07-05

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