DE60213875D1 - Verfahren und vorrichtung zur programmierung eines phasenänderungsspeichers - Google Patents

Verfahren und vorrichtung zur programmierung eines phasenänderungsspeichers

Info

Publication number
DE60213875D1
DE60213875D1 DE60213875T DE60213875T DE60213875D1 DE 60213875 D1 DE60213875 D1 DE 60213875D1 DE 60213875 T DE60213875 T DE 60213875T DE 60213875 T DE60213875 T DE 60213875T DE 60213875 D1 DE60213875 D1 DE 60213875D1
Authority
DE
Germany
Prior art keywords
programming
phase modifying
modifying memory
memory
phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60213875T
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English (en)
Other versions
DE60213875T2 (de
Inventor
Tyler Lowrey
Manzur Gill
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Intel Corp
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Application granted granted Critical
Publication of DE60213875D1 publication Critical patent/DE60213875D1/de
Publication of DE60213875T2 publication Critical patent/DE60213875T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5678—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using amorphous/crystalline phase transition storage elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0092—Write characterized by the shape, e.g. form, length, amplitude of the write pulse
DE60213875T 2001-12-28 2002-12-20 Verfahren und vorrichtung zur programmierung eines phasenänderungsspeichers Expired - Lifetime DE60213875T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/034,146 US6625054B2 (en) 2001-12-28 2001-12-28 Method and apparatus to program a phase change memory
US34146 2001-12-28
PCT/US2002/040994 WO2003058633A1 (en) 2001-12-28 2002-12-20 Method and apparatus to program a phase change memory

Publications (2)

Publication Number Publication Date
DE60213875D1 true DE60213875D1 (de) 2006-09-21
DE60213875T2 DE60213875T2 (de) 2007-03-08

Family

ID=21874593

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60213875T Expired - Lifetime DE60213875T2 (de) 2001-12-28 2002-12-20 Verfahren und vorrichtung zur programmierung eines phasenänderungsspeichers

Country Status (9)

Country Link
US (1) US6625054B2 (de)
EP (1) EP1468421B1 (de)
KR (1) KR100705867B1 (de)
CN (1) CN100449642C (de)
AT (1) ATE336068T1 (de)
AU (1) AU2002367356A1 (de)
DE (1) DE60213875T2 (de)
TW (1) TWI260016B (de)
WO (1) WO2003058633A1 (de)

Families Citing this family (126)

* Cited by examiner, † Cited by third party
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US20030123277A1 (en) 2003-07-03
EP1468421B1 (de) 2006-08-09
CN100449642C (zh) 2009-01-07
WO2003058633A1 (en) 2003-07-17
DE60213875T2 (de) 2007-03-08
KR100705867B1 (ko) 2007-04-10
AU2002367356A1 (en) 2003-07-24
TW200305158A (en) 2003-10-16
KR20040075033A (ko) 2004-08-26
US6625054B2 (en) 2003-09-23
EP1468421A1 (de) 2004-10-20
ATE336068T1 (de) 2006-09-15
CN1610951A (zh) 2005-04-27

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