DE60224552D1 - Fehlerbehandlung für beschreibbare referenz-speicherzellen zum verfolgen von einsatzspannungsdriften - Google Patents

Fehlerbehandlung für beschreibbare referenz-speicherzellen zum verfolgen von einsatzspannungsdriften

Info

Publication number
DE60224552D1
DE60224552D1 DE60224552T DE60224552T DE60224552D1 DE 60224552 D1 DE60224552 D1 DE 60224552D1 DE 60224552 T DE60224552 T DE 60224552T DE 60224552 T DE60224552 T DE 60224552T DE 60224552 D1 DE60224552 D1 DE 60224552D1
Authority
DE
Germany
Prior art keywords
drips
memory cells
operating voltage
reference memory
following operating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60224552T
Other languages
English (en)
Other versions
DE60224552T2 (de
Inventor
Geoffrey S Gongwer
Shahzad B Khalid
Daniel C Guterman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SanDisk Corp
Original Assignee
SanDisk Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SanDisk Corp filed Critical SanDisk Corp
Application granted granted Critical
Publication of DE60224552D1 publication Critical patent/DE60224552D1/de
Publication of DE60224552T2 publication Critical patent/DE60224552T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/14—Dummy cell management; Sense reference voltage generators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Read Only Memory (AREA)
  • Measurement Of Current Or Voltage (AREA)
  • Electrotherapy Devices (AREA)
DE60224552T 2001-11-02 2002-10-30 Fehlerbehandlung für beschreibbare referenz-speicherzellen zum verfolgen von einsatzspannungsdriften Expired - Lifetime DE60224552T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US53339 2001-11-02
US10/053,339 US6678192B2 (en) 2001-11-02 2001-11-02 Error management for writable tracking storage units
PCT/US2002/034942 WO2003041083A1 (en) 2001-11-02 2002-10-30 Error management for writable tracking storage units storing reference values

Publications (2)

Publication Number Publication Date
DE60224552D1 true DE60224552D1 (de) 2008-02-21
DE60224552T2 DE60224552T2 (de) 2009-01-08

Family

ID=21983519

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60224552T Expired - Lifetime DE60224552T2 (de) 2001-11-02 2002-10-30 Fehlerbehandlung für beschreibbare referenz-speicherzellen zum verfolgen von einsatzspannungsdriften

Country Status (9)

Country Link
US (1) US6678192B2 (de)
EP (1) EP1440447B1 (de)
JP (1) JP4398249B2 (de)
KR (1) KR101009545B1 (de)
CN (1) CN1578988B (de)
AT (1) ATE383648T1 (de)
DE (1) DE60224552T2 (de)
TW (1) TWI285807B (de)
WO (1) WO2003041083A1 (de)

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CN1578988B (zh) 2010-04-28
US20030086293A1 (en) 2003-05-08
TW200300227A (en) 2003-05-16
US6678192B2 (en) 2004-01-13
EP1440447A1 (de) 2004-07-28
EP1440447B1 (de) 2008-01-09
WO2003041083A1 (en) 2003-05-15
ATE383648T1 (de) 2008-01-15
DE60224552T2 (de) 2009-01-08
JP4398249B2 (ja) 2010-01-13
KR101009545B1 (ko) 2011-01-18
JP2005509226A (ja) 2005-04-07
TWI285807B (en) 2007-08-21
CN1578988A (zh) 2005-02-09
KR20040074979A (ko) 2004-08-26

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