DE60229549D1 - Induktionsheizgerät und verfahren zum kontrollierten erheizen von einem artikel - Google Patents

Induktionsheizgerät und verfahren zum kontrollierten erheizen von einem artikel

Info

Publication number
DE60229549D1
DE60229549D1 DE60229549T DE60229549T DE60229549D1 DE 60229549 D1 DE60229549 D1 DE 60229549D1 DE 60229549 T DE60229549 T DE 60229549T DE 60229549 T DE60229549 T DE 60229549T DE 60229549 D1 DE60229549 D1 DE 60229549D1
Authority
DE
Germany
Prior art keywords
article
processing chamber
susceptor
induction heater
controlled heating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60229549T
Other languages
English (en)
Inventor
Joseph John Sumakeris
Michael James Paisley
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wolfspeed Inc
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Inc filed Critical Cree Inc
Application granted granted Critical
Publication of DE60229549D1 publication Critical patent/DE60229549D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/02—Induction heating
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/02—Induction heating
    • H05B6/10—Induction heating apparatus, other than furnaces, for specific applications
    • H05B6/105—Induction heating apparatus, other than furnaces, for specific applications using a susceptor
    • H05B6/108—Induction heating apparatus, other than furnaces, for specific applications using a susceptor for heating a fluid
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
DE60229549T 2001-10-30 2002-10-24 Induktionsheizgerät und verfahren zum kontrollierten erheizen von einem artikel Expired - Lifetime DE60229549D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/017,492 US6896738B2 (en) 2001-10-30 2001-10-30 Induction heating devices and methods for controllably heating an article
PCT/US2002/034090 WO2003039195A2 (en) 2001-10-30 2002-10-24 Induction heating devices and methods for controllably heating an article

Publications (1)

Publication Number Publication Date
DE60229549D1 true DE60229549D1 (de) 2008-12-04

Family

ID=21782889

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60229549T Expired - Lifetime DE60229549D1 (de) 2001-10-30 2002-10-24 Induktionsheizgerät und verfahren zum kontrollierten erheizen von einem artikel

Country Status (11)

Country Link
US (3) US6896738B2 (de)
EP (1) EP1449407B1 (de)
JP (1) JP2005508097A (de)
KR (1) KR20050039709A (de)
CN (1) CN1611095A (de)
AT (1) ATE412331T1 (de)
AU (1) AU2002348053A1 (de)
CA (1) CA2464855A1 (de)
DE (1) DE60229549D1 (de)
TW (1) TWI274081B (de)
WO (1) WO2003039195A2 (de)

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US7230274B2 (en) 2004-03-01 2007-06-12 Cree, Inc Reduction of carrot defects in silicon carbide epitaxy
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US7109521B2 (en) * 2004-03-18 2006-09-19 Cree, Inc. Silicon carbide semiconductor structures including multiple epitaxial layers having sidewalls
US7365289B2 (en) * 2004-05-18 2008-04-29 The United States Of America As Represented By The Department Of Health And Human Services Production of nanostructures by curie point induction heating
WO2005113854A2 (en) * 2004-05-18 2005-12-01 Board Of Trustees Of The University Of Arkansas Apparatus and methods of making nanostructures by inductive heating
US7473873B2 (en) * 2004-05-18 2009-01-06 The Board Of Trustees Of The University Of Arkansas Apparatus and methods for synthesis of large size batches of carbon nanostructures
US9612215B2 (en) 2004-07-22 2017-04-04 Toyo Tanso Co., Ltd. Susceptor
US20060060145A1 (en) * 2004-09-17 2006-03-23 Van Den Berg Jannes R Susceptor with surface roughness for high temperature substrate processing
US20060065634A1 (en) * 2004-09-17 2006-03-30 Van Den Berg Jannes R Low temperature susceptor cleaning
US8052794B2 (en) * 2005-09-12 2011-11-08 The United States Of America As Represented By The Secretary Of The Navy Directed reagents to improve material uniformity
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US8823057B2 (en) 2006-11-06 2014-09-02 Cree, Inc. Semiconductor devices including implanted regions for providing low-resistance contact to buried layers and related devices
JP5138212B2 (ja) * 2006-12-25 2013-02-06 東京エレクトロン株式会社 成膜装置
JP5051875B2 (ja) * 2006-12-25 2012-10-17 東京エレクトロン株式会社 成膜装置および成膜方法
JP5202839B2 (ja) * 2006-12-25 2013-06-05 東京エレクトロン株式会社 成膜装置および成膜方法
JP5126095B2 (ja) * 2008-02-05 2013-01-23 東京エレクトロン株式会社 加熱装置及び加熱方法
US9328417B2 (en) * 2008-11-01 2016-05-03 Ultratech, Inc. System and method for thin film deposition
US8536582B2 (en) 2008-12-01 2013-09-17 Cree, Inc. Stable power devices on low-angle off-cut silicon carbide crystals
US8574528B2 (en) 2009-09-04 2013-11-05 University Of South Carolina Methods of growing a silicon carbide epitaxial layer on a substrate to increase and control carrier lifetime
CN102465335B (zh) * 2010-11-18 2014-07-16 南京大学 一种用于半导体材料热壁外延生长系统的加热装置
CN103160810B (zh) * 2011-12-09 2016-04-20 北京北方微电子基地设备工艺研究中心有限责任公司 一种用于感应加热的托盘及等离子体加工设备
CN103422073A (zh) * 2012-05-24 2013-12-04 北京北方微电子基地设备工艺研究中心有限责任公司 用于感应加热的托盘及等离子体加工设备
CN103794528B (zh) * 2012-10-30 2016-09-28 北京北方微电子基地设备工艺研究中心有限责任公司 半导体加工设备
US10047457B2 (en) * 2013-09-16 2018-08-14 Applied Materials, Inc. EPI pre-heat ring
JP6097681B2 (ja) 2013-12-24 2017-03-15 昭和電工株式会社 ＳｉＣエピタキシャルウェハの製造装置およびＳｉＣエピタキシャルウェハの製造方法
KR101431606B1 (ko) * 2014-02-24 2014-08-22 (주)앤피에스 기판 처리 장치
CN104046964B (zh) * 2014-07-01 2016-05-11 清华大学 热功率密度径向分布可调的电磁感应加热装置
JP6444641B2 (ja) * 2014-07-24 2018-12-26 株式会社ニューフレアテクノロジー 成膜装置、サセプタ、及び成膜方法
JP2017055086A (ja) * 2015-09-11 2017-03-16 昭和電工株式会社 ＳｉＣエピタキシャルウェハの製造方法及びＳｉＣエピタキシャルウェハの製造装置
CN108603290B (zh) * 2015-10-01 2021-09-10 环球晶圆股份有限公司 Cvd设备
US10407769B2 (en) * 2016-03-18 2019-09-10 Goodrich Corporation Method and apparatus for decreasing the radial temperature gradient in CVI/CVD furnaces
JP6635871B2 (ja) * 2016-05-11 2020-01-29 東京エレクトロン株式会社 成膜装置

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Also Published As

Publication number Publication date
TW200302290A (en) 2003-08-01
US9155131B2 (en) 2015-10-06
CN1611095A (zh) 2005-04-27
US20090136686A1 (en) 2009-05-28
EP1449407B1 (de) 2008-10-22
JP2005508097A (ja) 2005-03-24
US6896738B2 (en) 2005-05-24
EP1449407A2 (de) 2004-08-25
US20080127894A1 (en) 2008-06-05
WO2003039195A3 (en) 2003-12-04
US7390367B1 (en) 2008-06-24
US20030079689A1 (en) 2003-05-01
CA2464855A1 (en) 2003-05-08
ATE412331T1 (de) 2008-11-15
KR20050039709A (ko) 2005-04-29
WO2003039195A2 (en) 2003-05-08
TWI274081B (en) 2007-02-21
AU2002348053A1 (en) 2003-05-12

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