DE60233073D1 - Elektromechanische three-trace-junction-bauelemente - Google Patents
Elektromechanische three-trace-junction-bauelementeInfo
- Publication number
- DE60233073D1 DE60233073D1 DE60233073T DE60233073T DE60233073D1 DE 60233073 D1 DE60233073 D1 DE 60233073D1 DE 60233073 T DE60233073 T DE 60233073T DE 60233073 T DE60233073 T DE 60233073T DE 60233073 D1 DE60233073 D1 DE 60233073D1
- Authority
- DE
- Germany
- Prior art keywords
- electromechanical
- junction elements
- trace junction
- trace
- elements
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C23/00—Digital stores characterised by movement of mechanical parts to effect storage, e.g. using balls; Storage elements therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
- G11C13/025—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/0094—Switches making use of nanoelectromechanical systems [NEMS]
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/77—Array wherein the memory element being directly connected to the bit lines and word lines without any access device being used
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
- Y10T428/24917—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/033,323 US6911682B2 (en) | 2001-12-28 | 2001-12-28 | Electromechanical three-trace junction devices |
| PCT/US2002/040852 WO2003058652A2 (en) | 2001-12-28 | 2002-12-19 | Electromechanical three-trace junction devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE60233073D1 true DE60233073D1 (de) | 2009-09-03 |
Family
ID=21869744
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE60233073T Expired - Lifetime DE60233073D1 (de) | 2001-12-28 | 2002-12-19 | Elektromechanische three-trace-junction-bauelemente |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US6911682B2 (de) |
| EP (2) | EP1459334B1 (de) |
| JP (1) | JP4643145B2 (de) |
| AU (1) | AU2002364966A1 (de) |
| CA (1) | CA2471378A1 (de) |
| DE (1) | DE60233073D1 (de) |
| TW (3) | TWI303421B (de) |
| WO (1) | WO2003058652A2 (de) |
Families Citing this family (112)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6593666B1 (en) * | 2001-06-20 | 2003-07-15 | Ambient Systems, Inc. | Energy conversion systems using nanometer scale assemblies and methods for using same |
| US6706402B2 (en) | 2001-07-25 | 2004-03-16 | Nantero, Inc. | Nanotube films and articles |
| US6835591B2 (en) * | 2001-07-25 | 2004-12-28 | Nantero, Inc. | Methods of nanotube films and articles |
| US6924538B2 (en) * | 2001-07-25 | 2005-08-02 | Nantero, Inc. | Devices having vertically-disposed nanofabric articles and methods of making the same |
| US7259410B2 (en) * | 2001-07-25 | 2007-08-21 | Nantero, Inc. | Devices having horizontally-disposed nanofabric articles and methods of making the same |
| US7563711B1 (en) * | 2001-07-25 | 2009-07-21 | Nantero, Inc. | Method of forming a carbon nanotube-based contact to semiconductor |
| US6643165B2 (en) * | 2001-07-25 | 2003-11-04 | Nantero, Inc. | Electromechanical memory having cell selection circuitry constructed with nanotube technology |
| US7176505B2 (en) * | 2001-12-28 | 2007-02-13 | Nantero, Inc. | Electromechanical three-trace junction devices |
| US7858185B2 (en) * | 2003-09-08 | 2010-12-28 | Nantero, Inc. | High purity nanotube fabrics and films |
| AU2003303765A1 (en) | 2003-01-13 | 2004-08-13 | Nantero, Inc. | Carbon nanotube films, layers, fabrics, ribbons, elements and articles |
| US7666382B2 (en) | 2004-12-16 | 2010-02-23 | Nantero, Inc. | Aqueous carbon nanotube applicator liquids and methods for producing applicator liquids thereof |
| CA2515742A1 (en) | 2003-02-12 | 2004-08-26 | Nantero, Inc | Nanofabric articles and methods of making the same |
| US7075141B2 (en) * | 2003-03-28 | 2006-07-11 | Nantero, Inc. | Four terminal non-volatile transistor device |
| US6944054B2 (en) * | 2003-03-28 | 2005-09-13 | Nantero, Inc. | NRAM bit selectable two-device nanotube array |
| US7113426B2 (en) * | 2003-03-28 | 2006-09-26 | Nantero, Inc. | Non-volatile RAM cell and array using nanotube switch position for information state |
| US7294877B2 (en) * | 2003-03-28 | 2007-11-13 | Nantero, Inc. | Nanotube-on-gate FET structures and applications |
| WO2004088719A2 (en) | 2003-03-28 | 2004-10-14 | Nantero, Inc. | Nanotube-on-gate fet structures and applications |
| US6995046B2 (en) | 2003-04-22 | 2006-02-07 | Nantero, Inc. | Process for making byte erasable devices having elements made with nanotubes |
| US7045421B2 (en) * | 2003-04-22 | 2006-05-16 | Nantero, Inc. | Process for making bit selectable devices having elements made with nanotubes |
| US7780918B2 (en) | 2003-05-14 | 2010-08-24 | Nantero, Inc. | Sensor platform using a horizontally oriented nanotube element |
| US7199498B2 (en) * | 2003-06-02 | 2007-04-03 | Ambient Systems, Inc. | Electrical assemblies using molecular-scale electrically conductive and mechanically flexible beams and methods for application of same |
| US7148579B2 (en) * | 2003-06-02 | 2006-12-12 | Ambient Systems, Inc. | Energy conversion systems utilizing parallel array of automatic switches and generators |
| US7095645B2 (en) * | 2003-06-02 | 2006-08-22 | Ambient Systems, Inc. | Nanoelectromechanical memory cells and data storage devices |
| US20040238907A1 (en) * | 2003-06-02 | 2004-12-02 | Pinkerton Joseph F. | Nanoelectromechanical transistors and switch systems |
| US6982903B2 (en) * | 2003-06-09 | 2006-01-03 | Nantero, Inc. | Field effect devices having a source controlled via a nanotube switching element |
| US7274064B2 (en) * | 2003-06-09 | 2007-09-25 | Nanatero, Inc. | Non-volatile electromechanical field effect devices and circuits using same and methods of forming same |
| JP3731589B2 (ja) * | 2003-07-18 | 2006-01-05 | ソニー株式会社 | 撮像装置と同期信号発生装置 |
| JP2007502545A (ja) * | 2003-08-13 | 2007-02-08 | ナンテロ，インク． | 複数の制御装置を有するナノチューブを基礎とする交換エレメントと上記エレメントから製造される回路 |
| WO2005017967A2 (en) * | 2003-08-13 | 2005-02-24 | Nantero, Inc. | Nanotube device structure and methods of fabrication |
| US7289357B2 (en) * | 2003-08-13 | 2007-10-30 | Nantero, Inc. | Isolation structure for deflectable nanotube elements |
| CN101562049B (zh) * | 2003-08-13 | 2012-09-05 | 南泰若股份有限公司 | 具有多个控件的基于纳米管的开关元件及由其制成的电路 |
| US7115960B2 (en) * | 2003-08-13 | 2006-10-03 | Nantero, Inc. | Nanotube-based switching elements |
| US7416993B2 (en) * | 2003-09-08 | 2008-08-26 | Nantero, Inc. | Patterned nanowire articles on a substrate and methods of making the same |
| US7504051B2 (en) * | 2003-09-08 | 2009-03-17 | Nantero, Inc. | Applicator liquid for use in electronic manufacturing processes |
| US7375369B2 (en) | 2003-09-08 | 2008-05-20 | Nantero, Inc. | Spin-coatable liquid for formation of high purity nanotube films |
| US7034332B2 (en) * | 2004-01-27 | 2006-04-25 | Hewlett-Packard Development Company, L.P. | Nanometer-scale memory device utilizing self-aligned rectifying elements and method of making |
| US7528437B2 (en) * | 2004-02-11 | 2009-05-05 | Nantero, Inc. | EEPROMS using carbon nanotubes for cell storage |
| US7658869B2 (en) * | 2004-06-03 | 2010-02-09 | Nantero, Inc. | Applicator liquid containing ethyl lactate for preparation of nanotube films |
| US7556746B2 (en) * | 2004-06-03 | 2009-07-07 | Nantero, Inc. | Method of making an applicator liquid for electronics fabrication process |
| US7709880B2 (en) * | 2004-06-09 | 2010-05-04 | Nantero, Inc. | Field effect devices having a gate controlled via a nanotube switching element |
| US7330709B2 (en) * | 2004-06-18 | 2008-02-12 | Nantero, Inc. | Receiver circuit using nanotube-based switches and logic |
| US7329931B2 (en) * | 2004-06-18 | 2008-02-12 | Nantero, Inc. | Receiver circuit using nanotube-based switches and transistors |
| US7288970B2 (en) * | 2004-06-18 | 2007-10-30 | Nantero, Inc. | Integrated nanotube and field effect switching device |
| US7652342B2 (en) * | 2004-06-18 | 2010-01-26 | Nantero, Inc. | Nanotube-based transfer devices and related circuits |
| US7161403B2 (en) * | 2004-06-18 | 2007-01-09 | Nantero, Inc. | Storage elements using nanotube switching elements |
| US7164744B2 (en) * | 2004-06-18 | 2007-01-16 | Nantero, Inc. | Nanotube-based logic driver circuits |
| US7167026B2 (en) * | 2004-06-18 | 2007-01-23 | Nantero, Inc. | Tri-state circuit using nanotube switching elements |
| EP1805869A2 (de) | 2004-07-19 | 2007-07-11 | Ambient Systems, Inc. | Nanometerskalige elektrostatische und elektromagnetische motoren und generatoren |
| US8471238B2 (en) | 2004-09-16 | 2013-06-25 | Nantero Inc. | Light emitters using nanotubes and methods of making same |
| CA2581058C (en) * | 2004-09-21 | 2012-06-26 | Nantero, Inc. | Resistive elements using carbon nanotubes |
| EP1792149B1 (de) * | 2004-09-22 | 2010-03-31 | Nantero, Inc. | Direktzugriffsspeicher mit nanoröhrenschaltelementen |
| US20100147657A1 (en) * | 2004-11-02 | 2010-06-17 | Nantero, Inc. | Nanotube esd protective devices and corresponding nonvolatile and volatile nanotube switches |
| US7567414B2 (en) * | 2004-11-02 | 2009-07-28 | Nantero, Inc. | Nanotube ESD protective devices and corresponding nonvolatile and volatile nanotube switches |
| US7598544B2 (en) * | 2005-01-14 | 2009-10-06 | Nanotero, Inc. | Hybrid carbon nanotude FET(CNFET)-FET static RAM (SRAM) and method of making same |
| US8362525B2 (en) * | 2005-01-14 | 2013-01-29 | Nantero Inc. | Field effect device having a channel of nanofabric and methods of making same |
| US7318962B2 (en) * | 2005-01-28 | 2008-01-15 | The United States Of America As Represented By The Secretary Of The Navy | Magnetically directed self-assembly of molecular electronic junctions comprising conductively coated ferromagnetic microparticles |
| US9287356B2 (en) * | 2005-05-09 | 2016-03-15 | Nantero Inc. | Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same |
| US9390790B2 (en) | 2005-04-05 | 2016-07-12 | Nantero Inc. | Carbon based nonvolatile cross point memory incorporating carbon based diode select devices and MOSFET select devices for memory and logic applications |
| US8513768B2 (en) * | 2005-05-09 | 2013-08-20 | Nantero Inc. | Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same |
| US9911743B2 (en) * | 2005-05-09 | 2018-03-06 | Nantero, Inc. | Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same |
| US7781862B2 (en) | 2005-05-09 | 2010-08-24 | Nantero, Inc. | Two-terminal nanotube devices and systems and methods of making same |
| US7835170B2 (en) * | 2005-05-09 | 2010-11-16 | Nantero, Inc. | Memory elements and cross point switches and arrays of same using nonvolatile nanotube blocks |
| US8183665B2 (en) * | 2005-11-15 | 2012-05-22 | Nantero Inc. | Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same |
| US8217490B2 (en) * | 2005-05-09 | 2012-07-10 | Nantero Inc. | Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same |
| TWI324773B (en) * | 2005-05-09 | 2010-05-11 | Nantero Inc | Non-volatile shadow latch using a nanotube switch |
| US7394687B2 (en) * | 2005-05-09 | 2008-07-01 | Nantero, Inc. | Non-volatile-shadow latch using a nanotube switch |
| US7479654B2 (en) * | 2005-05-09 | 2009-01-20 | Nantero, Inc. | Memory arrays using nanotube articles with reprogrammable resistance |
| US7598127B2 (en) * | 2005-05-12 | 2009-10-06 | Nantero, Inc. | Nanotube fuse structure |
| JP5054936B2 (ja) * | 2005-06-22 | 2012-10-24 | パナソニック株式会社 | 電気機械メモリ、それを用いた電気回路及び電気機械メモリの駆動方法 |
| JP5019192B2 (ja) * | 2005-06-24 | 2012-09-05 | 株式会社東芝 | 半導体装置 |
| US20070048160A1 (en) * | 2005-07-19 | 2007-03-01 | Pinkerton Joseph F | Heat activated nanometer-scale pump |
| US7799196B2 (en) * | 2005-09-01 | 2010-09-21 | Micron Technology, Inc. | Methods and apparatus for sorting and/or depositing nanotubes |
| US7850778B2 (en) * | 2005-09-06 | 2010-12-14 | Lemaire Charles A | Apparatus and method for growing fullerene nanotube forests, and forming nanotube films, threads and composite structures therefrom |
| AU2006287610A1 (en) * | 2005-09-06 | 2007-03-15 | Nantero, Inc. | Nanotube fabric-based sensor systems and methods of making same |
| US7744793B2 (en) | 2005-09-06 | 2010-06-29 | Lemaire Alexander B | Apparatus and method for growing fullerene nanotube forests, and forming nanotube films, threads and composite structures therefrom |
| CA2621924A1 (en) | 2005-09-06 | 2007-03-06 | Nantero, Inc. | Carbon nanotubes for the selective transfer of heat from electronics |
| US7446044B2 (en) * | 2005-09-19 | 2008-11-04 | California Institute Of Technology | Carbon nanotube switches for memory, RF communications and sensing applications, and methods of making the same |
| KR100723412B1 (ko) | 2005-11-10 | 2007-05-30 | 삼성전자주식회사 | 나노튜브를 이용하는 비휘발성 메모리 소자 |
| US7385839B2 (en) * | 2005-12-01 | 2008-06-10 | International Business Machines Corporation | Memory devices using carbon nanotube (CNT) technologies |
| JP4843760B2 (ja) * | 2005-12-26 | 2011-12-21 | 株式会社発明屋 | カーボンナノチューブを用いた記憶素子 |
| US8264137B2 (en) * | 2006-01-03 | 2012-09-11 | Samsung Electronics Co., Ltd. | Curing binder material for carbon nanotube electron emission cathodes |
| DE102006004218B3 (de) * | 2006-01-30 | 2007-08-16 | Infineon Technologies Ag | Elektromechanische Speicher-Einrichtung und Verfahren zum Herstellen einer elektromechanischen Speicher-Einrichtung |
| KR100790822B1 (ko) * | 2006-08-07 | 2008-01-02 | 삼성전자주식회사 | 비 휘발성 메모리 소자 및 그의 제조방법 |
| EP2104109A1 (de) | 2006-08-08 | 2009-09-23 | Nantero, Inc. | Nichtflüchtige resistive Speicher, Sperrschaltungen und Betriebsschaltungen mit skalierbaren Nanoröhrchenschaltern mit zwei Klemmen |
| US8945970B2 (en) * | 2006-09-22 | 2015-02-03 | Carnegie Mellon University | Assembling and applying nano-electro-mechanical systems |
| KR100842730B1 (ko) | 2007-01-16 | 2008-07-01 | 삼성전자주식회사 | 멀티 비트 전기 기계적 메모리 소자 및 그의 제조방법 |
| WO2008112764A1 (en) | 2007-03-12 | 2008-09-18 | Nantero, Inc. | Electromagnetic and thermal sensors using carbon nanotubes and methods of making same |
| US8385113B2 (en) | 2007-04-03 | 2013-02-26 | Cjp Ip Holdings, Ltd. | Nanoelectromechanical systems and methods for making the same |
| US8134220B2 (en) * | 2007-06-22 | 2012-03-13 | Nantero Inc. | Two-terminal nanotube devices including a nanotube bridge and methods of making same |
| US7701013B2 (en) * | 2007-07-10 | 2010-04-20 | International Business Machines Corporation | Nanoelectromechanical transistors and methods of forming same |
| US7550354B2 (en) * | 2007-07-11 | 2009-06-23 | International Business Machines Corporation | Nanoelectromechanical transistors and methods of forming same |
| EA020950B1 (ru) * | 2007-09-17 | 2015-03-31 | Баррик Гольд Корпорейшн | Способ усовершенствования восстановления золота из двойных тугоплавких золотосодержащих руд |
| US8262770B2 (en) | 2007-09-18 | 2012-09-11 | Barrick Gold Corporation | Process for controlling acid in sulfide pressure oxidation processes |
| TR201002190T1 (tr) * | 2007-09-18 | 2010-08-23 | Barrick Gold Corporation | Altın ve gümüşün refrakter cevherlerinden geri kazanımına yönelik işlem |
| US7501636B1 (en) | 2007-09-20 | 2009-03-10 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Nanotunneling junction-based hyperspectal polarimetric photodetector and detection method |
| US8009461B2 (en) * | 2008-01-07 | 2011-08-30 | International Business Machines Corporation | SRAM device, and SRAM device design structure, with adaptable access transistors |
| KR20100133994A (ko) * | 2008-03-30 | 2010-12-22 | 힐스 인크. | 초전도 와이어 및 케이블, 초전도 와이어 및 케이블을 제조하기 위한 방법 |
| US7612270B1 (en) * | 2008-04-09 | 2009-11-03 | International Business Machines Corporation | Nanoelectromechanical digital inverter |
| US9263126B1 (en) | 2010-09-01 | 2016-02-16 | Nantero Inc. | Method for dynamically accessing and programming resistive change element arrays |
| US7897954B2 (en) * | 2008-10-10 | 2011-03-01 | Macronix International Co., Ltd. | Dielectric-sandwiched pillar memory device |
| US8574673B2 (en) | 2009-07-31 | 2013-11-05 | Nantero Inc. | Anisotropic nanotube fabric layers and films and methods of forming same |
| US8128993B2 (en) | 2009-07-31 | 2012-03-06 | Nantero Inc. | Anisotropic nanotube fabric layers and films and methods of forming same |
| US8253171B1 (en) | 2009-08-27 | 2012-08-28 | Lockheed Martin Corporation | Two terminal nanotube switch, memory array incorporating the same and method of making |
| US8350360B1 (en) | 2009-08-28 | 2013-01-08 | Lockheed Martin Corporation | Four-terminal carbon nanotube capacitors |
| US20110056812A1 (en) * | 2009-09-08 | 2011-03-10 | Kaul Anupama B | Nano-electro-mechanical switches using three-dimensional sidewall-conductive carbon nanofibers and method for making the same |
| US8435798B2 (en) * | 2010-01-13 | 2013-05-07 | California Institute Of Technology | Applications and methods of operating a three-dimensional nano-electro-mechanical resonator and related devices |
| US8405189B1 (en) | 2010-02-08 | 2013-03-26 | Lockheed Martin Corporation | Carbon nanotube (CNT) capacitors and devices integrated with CNT capacitors |
| US8125824B1 (en) | 2010-09-02 | 2012-02-28 | Lockheed Martin Corporation | Nanotube random access memory (NRAM) and transistor integration |
| CN102452648B (zh) * | 2010-10-27 | 2013-09-25 | 北京富纳特创新科技有限公司 | 碳纳米管膜承载结构及其使用方法 |
| EP2649005B1 (de) | 2010-12-07 | 2020-02-05 | SPTS Technologies Limited | Verfahren zur herstellung von elektromechanischen systemen |
| US9196766B1 (en) | 2012-04-25 | 2015-11-24 | Magnolia Optical Technologies, Inc. | Thermal detectors using graphene and oxides of graphene and methods of making the same |
| CN112814385A (zh) * | 2021-02-22 | 2021-05-18 | 齐鲁工业大学 | 一种3d建筑打印设备 |
Family Cites Families (110)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3448302A (en) | 1966-06-16 | 1969-06-03 | Itt | Operating circuit for phase change memory devices |
| FR2115034B1 (de) | 1970-11-24 | 1973-11-23 | Sescosem | |
| US3892890A (en) | 1972-05-12 | 1975-07-01 | Hitachi Ltd | Process for forming carbon coatings |
| US3970887A (en) * | 1974-06-19 | 1976-07-20 | Micro-Bit Corporation | Micro-structure field emission electron source |
| FR2294535A1 (fr) * | 1974-12-10 | 1976-07-09 | Lewiner Jacques | Perfectionnements aux dispositifs de commande du genre des relais |
| US4378629A (en) | 1979-08-10 | 1983-04-05 | Massachusetts Institute Of Technology | Semiconductor embedded layer technology including permeable base transistor, fabrication method |
| US5032538A (en) | 1979-08-10 | 1991-07-16 | Massachusetts Institute Of Technology | Semiconductor embedded layer technology utilizing selective epitaxial growth methods |
| US4324814A (en) | 1981-03-19 | 1982-04-13 | Rca Corporation | Method for forming a narrow thin film line |
| US4524431A (en) | 1982-02-01 | 1985-06-18 | Texas Instruments Incorporated | High-speed nonvolatile memory array |
| US4495511A (en) | 1982-08-23 | 1985-01-22 | The United States Of America As Represented By The Secretary Of The Navy | Permeable base transistor structure |
| US4510016A (en) | 1982-12-09 | 1985-04-09 | Gte Laboratories | Method of fabricating submicron silicon structures such as permeable base transistors |
| US4707197A (en) | 1984-08-02 | 1987-11-17 | American Telephone And Telegraph Company, At&T Bell Laboratories | Method of producing a silicide/Si heteroepitaxial structure, and articles produced by the method |
| JPS6177199A (ja) | 1984-09-21 | 1986-04-19 | Toshiba Corp | 半導体記憶装置 |
| JPS6194042A (ja) | 1984-10-16 | 1986-05-12 | Matsushita Electric Ind Co Ltd | 分子構築体およびその製造方法 |
| JPS61121369A (ja) | 1984-11-19 | 1986-06-09 | Fujitsu Ltd | 半導体装置 |
| US4901121A (en) | 1985-03-29 | 1990-02-13 | American Telephone & Telegraph Co., At&T Bell Labs. | Semiconductor device comprising a perforated metal silicide layer |
| US4701842A (en) | 1985-10-04 | 1987-10-20 | International Business Machines Corporation | Method and apparatus for avoiding excessive delay in a pipelined processor during the execution of a microbranch instruction |
| US4758534A (en) | 1985-11-13 | 1988-07-19 | Bell Communications Research, Inc. | Process for producing porous refractory metal layers embedded in semiconductor devices |
| US4819212A (en) | 1986-05-31 | 1989-04-04 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory device with readout test circuitry |
| US4939556A (en) | 1986-07-10 | 1990-07-03 | Canon Kabushiki Kaisha | Conductor device |
| US4845533A (en) | 1986-08-22 | 1989-07-04 | Energy Conversion Devices, Inc. | Thin film electrical devices with amorphous carbon electrodes and method of making same |
| CH670914A5 (de) * | 1986-09-10 | 1989-07-14 | Landis & Gyr Ag | |
| US4876667A (en) | 1987-06-22 | 1989-10-24 | Energy Conversion Devices, Inc. | Data storage device having a phase change memory medium reversible by direct overwrite |
| US4853893A (en) | 1987-07-02 | 1989-08-01 | Ramtron Corporation | Data storage device and method of using a ferroelectric capacitance divider |
| US4947226A (en) | 1987-12-08 | 1990-08-07 | Hoenywell, Inc. | Bilateral switching device |
| US5155561A (en) | 1988-01-05 | 1992-10-13 | Massachusetts Institute Of Technology | Permeable base transistor having an electrode configuration for heat dissipation |
| US5184320A (en) | 1988-02-12 | 1993-02-02 | Texas Instruments Incorporated | Cached random access memory device and system |
| US4888630A (en) | 1988-03-21 | 1989-12-19 | Texas Instruments Incorporated | Floating-gate transistor with a non-linear intergate dielectric |
| GB8807225D0 (en) | 1988-03-25 | 1988-04-27 | Hughes Microelectronics Ltd | Nonvolatile ram cell |
| US5198994A (en) | 1988-08-31 | 1993-03-30 | Kabushiki Kaisha Toshiba | Ferroelectric memory device |
| US5010037A (en) | 1988-10-14 | 1991-04-23 | California Institute Of Technology | Pinhole-free growth of epitaxial CoSi2 film on Si(111) |
| US5592643A (en) | 1988-12-22 | 1997-01-07 | Framdrive | Ferroelectric storage device emulating a rotating disk drive unit in acomputer system and having a parallel data interface |
| US5592644A (en) | 1988-12-22 | 1997-01-07 | Framdrive | Ferroelectric storage device emulating a rotating disk drive unit in a computer system and having an optical data interface |
| US5592642A (en) | 1988-12-22 | 1997-01-07 | Framdrive | Ferroelectric storage device emulating a rotating disk drive unit in a computer system and having an optical and parallel data interface |
| US5089545A (en) | 1989-02-12 | 1992-02-18 | Biotech International, Inc. | Switching and memory elements from polyamino acids and the method of their assembly |
| GB8907045D0 (en) | 1989-03-29 | 1989-05-10 | Hughes Microelectronics Ltd | Sense amplifier |
| JPH02296372A (ja) | 1989-05-10 | 1990-12-06 | Mitsubishi Electric Corp | 透過ベーストランジスタ |
| US5161218A (en) | 1989-11-13 | 1992-11-03 | Chips And Technologies, Inc. | Memory controller for using reserved DRAM addresses for EMS |
| US4985871A (en) | 1989-11-13 | 1991-01-15 | Chips And Technologies, Inc. | Memory controller for using reserved dram addresses for expanded memory space |
| DE4025269A1 (de) | 1990-02-07 | 1991-08-08 | Forschungszentrum Juelich Gmbh | Elektronisches bauelement und verfahren zu dessen herstellung |
| US5412785A (en) | 1990-04-09 | 1995-05-02 | Motorola, Inc. | Microprogrammed data processor which includes a microsequencer in which a next microaddress output of a microROM is connected to the or-plane of an entry PLA |
| FR2663466A1 (fr) | 1990-06-15 | 1991-12-20 | Thomson Csf | Composant semiconducteur a jonction schottky pour amplification hyperfrequence et circuits logiques rapides, et procede de realisation d'un tel composant. |
| US5216631A (en) * | 1990-11-02 | 1993-06-01 | Sliwa Jr John W | Microvibratory memory device |
| CA2062200A1 (en) | 1991-03-15 | 1992-09-16 | Stephen C. Purcell | Decompression processor for video applications |
| US5196396A (en) | 1991-07-16 | 1993-03-23 | The President And Fellows Of Harvard College | Method of making a superconducting fullerene composition by reacting a fullerene with an alloy containing alkali metal |
| JPH0562494A (ja) * | 1991-09-05 | 1993-03-12 | Yazaki Corp | 電子−機械式不揮発性メモリ及びその製造方法並びにメモリ読出回路 |
| US5444651A (en) | 1991-10-30 | 1995-08-22 | Sharp Kabushiki Kaisha | Non-volatile memory device |
| US5290715A (en) | 1991-12-31 | 1994-03-01 | U.S. Philips Corporation | Method of making dielectrically isolated metal base transistors and permeable base transistors |
| US5198390A (en) | 1992-01-16 | 1993-03-30 | Cornell Research Foundation, Inc. | RIE process for fabricating submicron, silicon electromechanical structures |
| EP0895162A3 (de) | 1992-01-22 | 1999-11-10 | Enhanced Memory Systems, Inc. | Verbesserte DRAM mit eingebauten Registern |
| US5850089A (en) | 1992-03-13 | 1998-12-15 | American Research Corporation Of Virginia | Modulated-structure of PZT/PT ferroelectric thin films for non-volatile random access memories |
| US5475341A (en) | 1992-06-01 | 1995-12-12 | Yale University | Sub-nanoscale electronic systems and devices |
| US5651126A (en) | 1992-06-26 | 1997-07-22 | Apple Computer, Inc. | Method and apparatus for reducing transitions on computer signal lines |
| US5252835A (en) | 1992-07-17 | 1993-10-12 | President And Trustees Of Harvard College | Machining oxide thin-films with an atomic force microscope: pattern and object formation on the nanometer scale |
| CA2154357C (en) | 1993-02-04 | 2004-03-02 | Kevin A. Shaw | Microstructures and single-mask, single-crystal process for fabrication thereof |
| JP2541091B2 (ja) | 1993-02-26 | 1996-10-09 | 日本電気株式会社 | 炭素材料とその製造方法 |
| CA2118662C (en) | 1993-03-22 | 1999-07-13 | Paul A. Santeler | Memory controller having all dram address and control signals provided synchronously from a single device |
| US5346683A (en) | 1993-03-26 | 1994-09-13 | Gas Research Institute | Uncapped and thinned carbon nanotubes and process |
| JPH06302179A (ja) | 1993-04-13 | 1994-10-28 | Casio Comput Co Ltd | 電子機器 |
| JPH0799189A (ja) | 1993-04-28 | 1995-04-11 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| GB9309327D0 (en) * | 1993-05-06 | 1993-06-23 | Smith Charles G | Bi-stable memory element |
| US5424054A (en) | 1993-05-21 | 1995-06-13 | International Business Machines Corporation | Carbon fibers and method for their production |
| US5426070A (en) | 1993-05-26 | 1995-06-20 | Cornell Research Foundation, Inc. | Microstructures and high temperature isolation process for fabrication thereof |
| US5456986A (en) | 1993-06-30 | 1995-10-10 | Carnegie Mellon University | Magnetic metal or metal carbide nanoparticles and a process for forming same |
| US5453970A (en) | 1993-07-13 | 1995-09-26 | Rust; Thomas F. | Molecular memory medium and molecular memory disk drive for storing information using a tunnelling probe |
| AU8070294A (en) | 1993-07-15 | 1995-02-13 | President And Fellows Of Harvard College | Extended nitride material comprising beta -c3n4 |
| US5547748A (en) | 1994-01-14 | 1996-08-20 | Sri International | Carbon nanoencapsulates |
| JP2526408B2 (ja) | 1994-01-28 | 1996-08-21 | 工業技術院長 | カ―ボンナノチュ―ブの連続製造方法及び装置 |
| US5479172A (en) | 1994-02-10 | 1995-12-26 | Racom Systems, Inc. | Power supply and power enable circuit for an RF/ID transponder |
| US5608246A (en) | 1994-02-10 | 1997-03-04 | Ramtron International Corporation | Integration of high value capacitor with ferroelectric memory |
| US5444421A (en) | 1994-02-10 | 1995-08-22 | Racom Systems, Inc. | Low power consumption oscillator using multiple transconductance amplifiers |
| US5553099A (en) | 1994-02-10 | 1996-09-03 | Racom Systems, Inc. | FSK detector for determining an increasing time period between adjacent pulses of an FSK modulated square wave pulse train |
| US5521602A (en) | 1994-02-10 | 1996-05-28 | Racom Systems, Inc. | Communications system utilizing FSK/PSK modulation techniques |
| US5517194A (en) | 1994-02-10 | 1996-05-14 | Racom Systems, Inc. | Passive RF transponder and method |
| US5533061A (en) | 1994-02-10 | 1996-07-02 | Racom Systems, Inc. | Method and apparatus for detecting an FSK encoded carrier signal |
| US5563424A (en) | 1994-03-24 | 1996-10-08 | Uniax Corporation | Polymer grid triodes |
| US5626670A (en) | 1994-10-03 | 1997-05-06 | American Research Corporation Of Virginia | Method for producing low thermal budget ferroelectric thin films for integrated device structures using laser-crystallization of spin-on sol-gel films |
| US5590078A (en) | 1994-10-07 | 1996-12-31 | Mukesh Chatter | Method of and apparatus for improved dynamic random access memory (DRAM) providing increased data bandwidth and addressing range for current DRAM devices and/or equivalent bandwidth and addressing range for smaller DRAM devices |
| US6100109A (en) * | 1994-11-02 | 2000-08-08 | Siemens Aktiengesellschaft | Method for producing a memory device |
| US5623638A (en) | 1994-11-22 | 1997-04-22 | Advanced Micro Devices, Inc. | Memory control unit with programmable edge generator to minimize delay periods for critical DRAM timing parameters |
| US5716708A (en) | 1995-01-17 | 1998-02-10 | Lagow; Richard J. | Acetylenic carbon allotrope |
| US5780101A (en) | 1995-02-17 | 1998-07-14 | Arizona Board Of Regents On Behalf Of The University Of Arizona | Method for producing encapsulated nanoparticles and carbon nanotubes using catalytic disproportionation of carbon monoxide |
| US5747180A (en) | 1995-05-19 | 1998-05-05 | University Of Notre Dame Du Lac | Electrochemical synthesis of quasi-periodic quantum dot and nanostructure arrays |
| US5751156A (en) | 1995-06-07 | 1998-05-12 | Yale University | Mechanically controllable break transducer |
| US5640133A (en) | 1995-06-23 | 1997-06-17 | Cornell Research Foundation, Inc. | Capacitance based tunable micromechanical resonators |
| EP0758128B1 (de) * | 1995-08-09 | 2001-11-28 | Infineon Technologies AG | Speichervorrichtung und Herstellungsverfahren |
| US5757038A (en) | 1995-11-06 | 1998-05-26 | International Business Machines Corporation | Self-aligned dual gate MOSFET with an ultranarrow channel |
| US5799209A (en) | 1995-12-29 | 1998-08-25 | Chatter; Mukesh | Multi-port internally cached DRAM system utilizing independent serial interfaces and buffers arbitratively connected under a dynamic configuration |
| US5875451A (en) | 1996-03-14 | 1999-02-23 | Enhanced Memory Systems, Inc. | Computer hybrid memory including DRAM and EDRAM memory components, with secondary cache in EDRAM for DRAM |
| US5650958A (en) | 1996-03-18 | 1997-07-22 | International Business Machines Corporation | Magnetic tunnel junctions with controlled magnetic response |
| US5640343A (en) | 1996-03-18 | 1997-06-17 | International Business Machines Corporation | Magnetic memory array using magnetic tunnel junction devices in the memory cells |
| JP2954877B2 (ja) | 1996-06-18 | 1999-09-27 | 松下電子工業株式会社 | 容量素子の製造方法 |
| US5838165A (en) | 1996-08-21 | 1998-11-17 | Chatter; Mukesh | High performance self modifying on-the-fly alterable logic FPGA, architecture and method |
| US5781717A (en) | 1996-09-19 | 1998-07-14 | I-Cube, Inc. | Dynamic spare column replacement memory system |
| JPH10106960A (ja) | 1996-09-25 | 1998-04-24 | Sony Corp | 量子細線の製造方法 |
| US5802583A (en) | 1996-10-30 | 1998-09-01 | Ramtron International Corporation | Sysyem and method providing selective write protection for individual blocks of memory in a non-volatile memory device |
| US5753088A (en) | 1997-02-18 | 1998-05-19 | General Motors Corporation | Method for making carbon nanotubes |
| US5847565A (en) | 1997-03-31 | 1998-12-08 | Council Of Scientific And Industrial Research | Logic device |
| US6159620A (en) | 1997-03-31 | 2000-12-12 | The Regents Of The University Of California | Single-electron solid state electronic device |
| US5878840A (en) | 1997-05-06 | 1999-03-09 | Tessum; Mark Reed | Apparatus and method for stabilizing a scaffold assembly |
| KR100276569B1 (ko) | 1997-06-20 | 2000-12-15 | 김영환 | 강유전메모리장치 |
| JP2000031397A (ja) * | 1998-07-10 | 2000-01-28 | Toshiba Corp | 半導体装置 |
| US6128214A (en) * | 1999-03-29 | 2000-10-03 | Hewlett-Packard | Molecular wire crossbar memory |
| AU782000B2 (en) * | 1999-07-02 | 2005-06-23 | President And Fellows Of Harvard College | Nanoscopic wire-based devices, arrays, and methods of their manufacture |
| US6198655B1 (en) | 1999-12-10 | 2001-03-06 | The Regents Of The University Of California | Electrically addressable volatile non-volatile molecular-based switching devices |
| US6541309B2 (en) * | 2001-03-21 | 2003-04-01 | Hewlett-Packard Development Company Lp | Fabricating a molecular electronic device having a protective barrier layer |
| US6611033B2 (en) * | 2001-04-12 | 2003-08-26 | Ibm Corporation | Micromachined electromechanical (MEM) random access memory array and method of making same |
| AU2002364928C1 (en) * | 2001-07-20 | 2008-09-11 | President And Fellows Of Harvard College | Transition metal oxide nanowires, and devices incorporating them |
| US6586965B2 (en) * | 2001-10-29 | 2003-07-01 | Hewlett Packard Development Company Lp | Molecular crossbar latch |
| US6849245B2 (en) * | 2001-12-11 | 2005-02-01 | Catalytic Materials Llc | Catalysts for producing narrow carbon nanostructures |
-
2001
- 2001-12-28 US US10/033,323 patent/US6911682B2/en not_active Expired - Lifetime
-
2002
- 2002-12-19 DE DE60233073T patent/DE60233073D1/de not_active Expired - Lifetime
- 2002-12-19 WO PCT/US2002/040852 patent/WO2003058652A2/en active Search and Examination
- 2002-12-19 CA CA002471378A patent/CA2471378A1/en not_active Abandoned
- 2002-12-19 JP JP2003558875A patent/JP4643145B2/ja not_active Expired - Fee Related
- 2002-12-19 EP EP02802582A patent/EP1459334B1/de not_active Expired - Lifetime
- 2002-12-19 AU AU2002364966A patent/AU2002364966A1/en not_active Abandoned
- 2002-12-19 EP EP09163561A patent/EP2108493A1/de not_active Withdrawn
- 2002-12-27 TW TW091137563A patent/TWI303421B/zh active
-
2003
- 2003-01-24 TW TW092101536A patent/TWI313669B/zh not_active IP Right Cessation
- 2003-01-24 TW TW092101535A patent/TWI307330B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| WO2003058652A3 (en) | 2004-07-08 |
| CA2471378A1 (en) | 2003-07-17 |
| TW200413248A (en) | 2004-08-01 |
| TWI307330B (en) | 2009-03-11 |
| AU2002364966A1 (en) | 2003-07-24 |
| EP1459334B1 (de) | 2009-07-22 |
| EP2108493A1 (de) | 2009-10-14 |
| US20030124325A1 (en) | 2003-07-03 |
| TWI303421B (en) | 2008-11-21 |
| JP2005514784A (ja) | 2005-05-19 |
| TWI313669B (en) | 2009-08-21 |
| WO2003058652A2 (en) | 2003-07-17 |
| US6911682B2 (en) | 2005-06-28 |
| TW200413249A (en) | 2004-08-01 |
| EP1459334A2 (de) | 2004-09-22 |
| EP1459334A4 (de) | 2007-05-23 |
| JP4643145B2 (ja) | 2011-03-02 |
| AU2002364966A8 (en) | 2003-07-24 |
| TW200307941A (en) | 2003-12-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE60233073D1 (de) | Elektromechanische three-trace-junction-bauelemente | |
| DE50204184D1 (de) | Espressobrüheinrichtung | |
| ATE524462T1 (de) | C5-modifizierte indazolylpyrrolotriazine | |
| DE50103741D1 (de) | Welle-Nabe-Verbindung | |
| DE50204386D1 (de) | Kreuztransducer | |
| ATE335486T1 (de) | Hydrazono-malonitrile | |
| DE1319930T1 (de) | Coriolismassendurchflussmesser | |
| DE50204551D1 (de) | Kugelgelenk | |
| NO20035764L (no) | Borbar knutepunktforbindelse | |
| DE50203984D1 (de) | Kugelgelenk | |
| DE50203412D1 (de) | Schwenkkolbenverdränger | |
| ATE355059T1 (de) | Isoxazolopyridinone | |
| DK1339416T3 (da) | Sporelementer | |
| DE50201862D1 (de) | Messwandler | |
| ATE232273T1 (de) | Anschlusselement | |
| DE50203093D1 (de) | Losradlager | |
| DE50201268D1 (de) | Schraubblindniet-Verbindungsanordnung | |
| ATE319694T1 (de) | Phenylalkyne | |
| ATA18372001A (de) | Gelenksbolzenbaueinheit | |
| DE60232564D1 (de) | Fixiergerät | |
| DE50202088D1 (de) | Garmodulsystem | |
| DE60229395D1 (de) | Altung | |
| DE10295006D2 (de) | Bauwerksabdichtung | |
| DE50108381D1 (de) | Synchronisierschaltungsanordnung | |
| ATA13992002A (de) | Schlackengranulierungsanlage |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition |