DE60302916D1 - Halbleiterlaser und Herstellungsverfahren - Google Patents

Halbleiterlaser und Herstellungsverfahren

Info

Publication number
DE60302916D1
DE60302916D1 DE60302916T DE60302916T DE60302916D1 DE 60302916 D1 DE60302916 D1 DE 60302916D1 DE 60302916 T DE60302916 T DE 60302916T DE 60302916 T DE60302916 T DE 60302916T DE 60302916 D1 DE60302916 D1 DE 60302916D1
Authority
DE
Germany
Prior art keywords
manufacturing process
semiconductor laser
laser
semiconductor
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60302916T
Other languages
English (en)
Other versions
DE60302916T2 (de
Inventor
Akira Tanaka
Hirokazu Tanaka
Yoshiyuki Itoh
Gen-Ei Koichi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE60302916D1 publication Critical patent/DE60302916D1/de
Publication of DE60302916T2 publication Critical patent/DE60302916T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H01S5/162—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions made by diffusion or disordening of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2081—Methods of obtaining the confinement using special etching techniques
    • H01S5/2086—Methods of obtaining the confinement using special etching techniques lateral etch control, e.g. mask induced
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2201—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure in a specific crystallographic orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2206—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials
    • H01S5/221—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials containing aluminium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • H01S5/3432—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs the whole junction comprising only (AI)GaAs
DE60302916T 2002-03-15 2003-03-14 Halbleiterlaser und Herstellungsverfahren Expired - Fee Related DE60302916T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002072051A JP2003273467A (ja) 2002-03-15 2002-03-15 半導体レーザおよびその製造方法
JP2002072051 2002-03-15

Publications (2)

Publication Number Publication Date
DE60302916D1 true DE60302916D1 (de) 2006-02-02
DE60302916T2 DE60302916T2 (de) 2006-08-24

Family

ID=27764559

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60302916T Expired - Fee Related DE60302916T2 (de) 2002-03-15 2003-03-14 Halbleiterlaser und Herstellungsverfahren

Country Status (7)

Country Link
US (1) US7164701B2 (de)
EP (1) EP1345299B1 (de)
JP (1) JP2003273467A (de)
KR (1) KR100537475B1 (de)
CN (1) CN1445893A (de)
DE (1) DE60302916T2 (de)
TW (1) TWI230489B (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005033077A (ja) * 2003-07-09 2005-02-03 Matsushita Electric Ind Co Ltd 半導体レーザ装置
JP4091529B2 (ja) * 2003-11-20 2008-05-28 ローム株式会社 半導体レーザ
CN100346543C (zh) * 2003-11-25 2007-10-31 夏普株式会社 半导体激光元件及其制造方法
JP2005209952A (ja) * 2004-01-23 2005-08-04 Matsushita Electric Ind Co Ltd 半導体レーザ装置およびそれを用いた光ピックアップ装置
JP4551121B2 (ja) * 2004-05-24 2010-09-22 シャープ株式会社 半導体レーザ装置
KR100818522B1 (ko) * 2004-08-31 2008-03-31 삼성전기주식회사 레이저 다이오드의 제조방법
KR100550923B1 (ko) * 2004-09-08 2006-02-13 삼성전기주식회사 ＧａＡｓ계 반도체 레이저 및 제조방법
JP2007059577A (ja) * 2005-08-24 2007-03-08 Rohm Co Ltd モノリシック型半導体レーザ
EP2259346B1 (de) * 2008-03-27 2019-07-03 LG Innotek Co., Ltd. Lichtemittierendes element und herstellungsverfahren dafür
JP5948776B2 (ja) * 2011-09-27 2016-07-06 ソニー株式会社 発光素子及びその製造方法
CN111092366B (zh) * 2018-10-23 2021-04-06 山东华光光电子股份有限公司 一种具有双面电流限制结构的半导体激光器及制备方法
KR102440071B1 (ko) * 2020-10-16 2022-09-05 (주)큐에스아이 반도체 레이저 다이오드 소자 및 그 제조 방법

Family Cites Families (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5282077A (en) * 1986-03-31 1994-01-25 Gentex Corporation Variable reflectance mirror
US5128799B1 (en) * 1986-03-31 1996-11-05 Gentex Corp Variable reflectance motor vehicle mirror
US4712879A (en) * 1986-04-02 1987-12-15 Donnelly Corporation Electrochromic mirror
US4852979A (en) * 1987-07-30 1989-08-01 Donnelly Corporation Encapsulated electrochromic mirror and method of making same
US5065404A (en) * 1989-07-12 1991-11-12 Kabushiki Kaisha Toshiba Transverse-mode oscillation semiconductor laser device
US5076674A (en) * 1990-03-09 1991-12-31 Donnelly Corporation Reduced first surface reflectivity electrochromic/electrochemichromic rearview mirror assembly
US5239405A (en) * 1991-09-06 1993-08-24 Donnelly Corporation Electrochemichromic solutions, processes for preparing and using the same, and devices manufactured with the same
JPH06252508A (ja) 1993-02-26 1994-09-09 Eastman Kodak Japan Kk 半導体レーザ
JPH06350188A (ja) 1993-06-04 1994-12-22 Fuji Electric Co Ltd 半導体レーザ素子
BE1007251A3 (nl) * 1993-06-28 1995-05-02 Philips Electronics Nv Straling-emitterende halfgeleiderdiode en werkwijze ter vervaardiging daarvan.
TW347597B (en) * 1994-01-31 1998-12-11 Mitsubishi Chem Corp Method of forming a groove in a semiconductor laser diode and a semiconductor laser diode
JP3322512B2 (ja) * 1994-04-28 2002-09-09 三洋電機株式会社 半導体レーザ素子の設計方法
JP3195715B2 (ja) 1994-07-18 2001-08-06 シャープ株式会社 半導体レーザ素子及びその製造方法
JP3584508B2 (ja) 1994-12-27 2004-11-04 松下電器産業株式会社 短波長光源
JPH08279650A (ja) * 1995-04-06 1996-10-22 Mitsubishi Electric Corp 半導体レーザ装置、及び半導体レーザ装置の製造方法
JPH09139550A (ja) * 1995-11-16 1997-05-27 Mitsubishi Electric Corp 半導体レーザ装置の製造方法、及び半導体レーザ装置
FR2743195B1 (fr) * 1995-12-27 1998-02-06 Alsthom Cge Alcatel Laser semi-conducteur a emission par la surface
US5963572A (en) * 1995-12-28 1999-10-05 Sanyo Electric Co., Ltd. Semiconductor laser device and manufacturing method thereof
US6055255A (en) * 1996-02-01 2000-04-25 Sharp Kabushiki Kaisha Semiconductor laser device and method for producing the same
TW342545B (en) * 1996-03-28 1998-10-11 Sanyo Electric Co Semiconductor laser element and method for designing same
JP3451841B2 (ja) 1996-06-14 2003-09-29 ソニー株式会社 半導体レーザ、光ピックアップ装置ならびに光記録および／または再生装置
JP3788831B2 (ja) * 1996-08-30 2006-06-21 株式会社リコー 半導体素子およびその製造方法
JPH1098233A (ja) * 1996-09-25 1998-04-14 Rohm Co Ltd 半導体レーザおよびその製法
US5825527A (en) * 1997-04-02 1998-10-20 Gentex Corporation Information display area on electrochromic mirrors having a third surface metal reflector
US5818625A (en) * 1997-04-02 1998-10-06 Gentex Corporation Electrochromic rearview mirror incorporating a third surface metal reflector
JP3045104B2 (ja) * 1997-05-21 2000-05-29 日本電気株式会社 半導体レーザ
JP3488597B2 (ja) * 1997-07-14 2004-01-19 株式会社東芝 窒化ガリウム系化合物半導体装置
EP0908988A3 (de) * 1997-10-06 2001-10-17 Sharp Kabushiki Kaisha Lichtemittierende Halbleitervorrichtung und Herstellungsverfahren
JP2000031585A (ja) 1998-07-15 2000-01-28 Rohm Co Ltd 半導体レーザ装置
US6157480A (en) * 1998-09-21 2000-12-05 Gentex Corporation Seal for electrochromic devices
JP2000244063A (ja) * 1999-02-19 2000-09-08 Mitsubishi Electric Corp 半導体レーザ装置及びその製造方法
JP3862894B2 (ja) * 1999-08-18 2006-12-27 株式会社東芝 半導体レーザ装置
DE60031819T2 (de) 1999-09-27 2007-09-13 Sanyo Electric Co., Ltd., Moriguchi Halbleiterlaservorrichtung und Herstellungsverfahren
JP2001210909A (ja) 2000-01-26 2001-08-03 Victor Co Of Japan Ltd 半導体レーザ装置
US6664605B1 (en) * 2000-03-31 2003-12-16 Triquint Technology Holding Co. Dopant diffusion blocking for optoelectronic devices using InAlAs and/or InGaAlAs
JP2001345518A (ja) 2000-06-01 2001-12-14 Nec Corp 半導体レーザ素子
EP1195864A3 (de) * 2000-10-04 2004-11-10 Matsushita Electric Industrial Co., Ltd. Halbleiterlaservorrichtung
JP2002232082A (ja) * 2000-11-30 2002-08-16 Furukawa Electric Co Ltd:The 埋込型半導体レーザ素子の製造方法、及び埋込型半導体レーザ素子
JP2002374040A (ja) * 2001-06-15 2002-12-26 Sharp Corp 半導体レーザ素子およびその製造方法
JP3911140B2 (ja) * 2001-09-05 2007-05-09 シャープ株式会社 半導体レーザの製造方法

Also Published As

Publication number Publication date
TW200306044A (en) 2003-11-01
DE60302916T2 (de) 2006-08-24
KR20030074474A (ko) 2003-09-19
JP2003273467A (ja) 2003-09-26
US7164701B2 (en) 2007-01-16
KR100537475B1 (ko) 2005-12-19
EP1345299A1 (de) 2003-09-17
US20040114651A1 (en) 2004-06-17
EP1345299B1 (de) 2005-12-28
CN1445893A (zh) 2003-10-01
TWI230489B (en) 2005-04-01

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