DE60305987D1 - Reduzierung der in einem nicht flüchtigen Speicher durch Rauschen verursachten Effekte durch mehrfaches Auslesen - Google Patents

Reduzierung der in einem nicht flüchtigen Speicher durch Rauschen verursachten Effekte durch mehrfaches Auslesen

Info

Publication number
DE60305987D1
DE60305987D1 DE60305987T DE60305987T DE60305987D1 DE 60305987 D1 DE60305987 D1 DE 60305987D1 DE 60305987 T DE60305987 T DE 60305987T DE 60305987 T DE60305987 T DE 60305987T DE 60305987 D1 DE60305987 D1 DE 60305987D1
Authority
DE
Germany
Prior art keywords
storage
read
storage element
noise
full read
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60305987T
Other languages
English (en)
Other versions
DE60305987T2 (de
Inventor
Carlos J Gonzalez
Daniel C Guterman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SanDisk Corp
Original Assignee
SanDisk Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SanDisk Corp filed Critical SanDisk Corp
Application granted granted Critical
Publication of DE60305987D1 publication Critical patent/DE60305987D1/de
Publication of DE60305987T2 publication Critical patent/DE60305987T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • G11C7/106—Data output latches
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1006—Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G11C2013/0057—Read done in two steps, e.g. wherein the cell is read twice and one of the two read values serving as a reference value
DE60305987T 2002-01-18 2003-01-17 Reduzierung der in einem nicht flüchtigen Speicher durch Rausch verursachten Effekte durch mehrfaches Auslesen Expired - Lifetime DE60305987T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/052,888 US6621739B2 (en) 2002-01-18 2002-01-18 Reducing the effects of noise in non-volatile memories through multiple reads
US52888 2008-03-21

Publications (2)

Publication Number Publication Date
DE60305987D1 true DE60305987D1 (de) 2006-07-27
DE60305987T2 DE60305987T2 (de) 2007-02-15

Family

ID=21980564

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60305987T Expired - Lifetime DE60305987T2 (de) 2002-01-18 2003-01-17 Reduzierung der in einem nicht flüchtigen Speicher durch Rausch verursachten Effekte durch mehrfaches Auslesen

Country Status (8)

Country Link
US (5) US6621739B2 (de)
EP (1) EP1329894B1 (de)
JP (2) JP4482278B2 (de)
KR (1) KR101092882B1 (de)
CN (1) CN1434456B (de)
AT (1) ATE330316T1 (de)
DE (1) DE60305987T2 (de)
ES (1) ES2262946T3 (de)

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US7848149B2 (en) 2010-12-07
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US6785164B2 (en) 2004-08-31
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