DE60308076D1 - Einbrennsystem und -verfahren für verbesserte Speicherzuverlässigkeit - Google Patents

Einbrennsystem und -verfahren für verbesserte Speicherzuverlässigkeit

Info

Publication number
DE60308076D1
DE60308076D1 DE60308076T DE60308076T DE60308076D1 DE 60308076 D1 DE60308076 D1 DE 60308076D1 DE 60308076 T DE60308076 T DE 60308076T DE 60308076 T DE60308076 T DE 60308076T DE 60308076 D1 DE60308076 D1 DE 60308076D1
Authority
DE
Germany
Prior art keywords
improved memory
baking system
memory reliability
reliability
baking
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60308076T
Other languages
English (en)
Other versions
DE60308076T2 (de
Inventor
Gil I Winograd
Esin Terzioglu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Broadcom Corp
Original Assignee
Broadcom Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Broadcom Corp filed Critical Broadcom Corp
Publication of DE60308076D1 publication Critical patent/DE60308076D1/de
Application granted granted Critical
Publication of DE60308076T2 publication Critical patent/DE60308076T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
    • G11C29/26—Accessing multiple arrays
    • G11C2029/2602—Concurrent test
DE60308076T 2002-03-19 2003-03-19 Einbrennsystem und -verfahren für verbesserte Speicherzuverlässigkeit Expired - Lifetime DE60308076T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/101,241 US6909648B2 (en) 2002-03-19 2002-03-19 Burn in system and method for improved memory reliability
US101241 2002-03-19

Publications (2)

Publication Number Publication Date
DE60308076D1 true DE60308076D1 (de) 2006-10-19
DE60308076T2 DE60308076T2 (de) 2007-04-19

Family

ID=27788345

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60308076T Expired - Lifetime DE60308076T2 (de) 2002-03-19 2003-03-19 Einbrennsystem und -verfahren für verbesserte Speicherzuverlässigkeit

Country Status (3)

Country Link
US (2) US6909648B2 (de)
EP (1) EP1347459B1 (de)
DE (1) DE60308076T2 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6909648B2 (en) * 2002-03-19 2005-06-21 Broadcom Corporation Burn in system and method for improved memory reliability
KR100575882B1 (ko) * 2003-11-26 2006-05-03 주식회사 하이닉스반도체 번인 테스트용 내부 전압 발생 장치
KR100555534B1 (ko) * 2003-12-03 2006-03-03 삼성전자주식회사 인액티브 위크 프리차아징 및 이퀄라이징 스킴을 채용한프리차아지 회로, 이를 포함하는 메모리 장치 및 그프리차아지 방법
US20060176747A1 (en) * 2005-02-09 2006-08-10 International Business Machines Corporation Circuit for interfacing local bitlines with global bitline
JP2007157282A (ja) * 2005-12-07 2007-06-21 Elpida Memory Inc ウェハ・バーンイン・テスト方法、ウェハ・バーンイン・テスト装置及び半導体記憶装置
US7473568B2 (en) * 2006-05-17 2009-01-06 Kingston Technology Corp. Memory-module manufacturing method with memory-chip burn-in and full functional testing delayed until module burn-in
KR100873613B1 (ko) * 2006-11-14 2008-12-12 주식회사 하이닉스반도체 반도체 메모리 장치의 전압 생성 회로 및 방법
US8004926B2 (en) 2008-02-05 2011-08-23 Marvell World Trade Ltd. System and method for memory array decoding
TWI383400B (zh) * 2008-08-01 2013-01-21 Vanguard Int Semiconduct Corp 靜態隨機存取記憶體燒機方法
US8837250B2 (en) * 2010-07-20 2014-09-16 Taiwan Semiconductor Manufacturing Co., Ltd. Method and apparatus for word line decoder layout
US8659955B2 (en) * 2011-08-18 2014-02-25 Broadcom Corporation Memory array having word lines with folded architecture
KR102144367B1 (ko) * 2013-10-22 2020-08-14 삼성전자주식회사 반도체 패키지 및 이의 제조 방법
US11869617B2 (en) * 2021-09-01 2024-01-09 Meta Platforms Technologies, Llc Self-repair for sequential SRAM

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0122100B1 (ko) * 1994-03-10 1997-11-26 김광호 스트레스회로를 가지는 반도체집적회로 및 그 스트레스전압공급방법
US5610866A (en) * 1994-10-31 1997-03-11 Sgs-Thomson Microelectronics, Inc. Circuit structure and method for stress testing of bit lines
JP3380828B2 (ja) * 1995-04-18 2003-02-24 松下電器産業株式会社 半導体メモリ装置
US5822269A (en) 1995-11-13 1998-10-13 Mobil Oil Corporation Method for separation of a plurality of vibratory seismic energy source signals
US5852581A (en) 1996-06-13 1998-12-22 Micron Technology, Inc. Method of stress testing memory integrated circuits
JPH10269800A (ja) * 1997-03-27 1998-10-09 Mitsubishi Electric Corp 半導体記憶装置
JP3863968B2 (ja) 1997-06-10 2006-12-27 株式会社ルネサステクノロジ 半導体記憶装置
US5822268A (en) * 1997-09-11 1998-10-13 International Business Machines Corporation Hierarchical column select line architecture for multi-bank DRAMs
US6112322A (en) * 1997-11-04 2000-08-29 Xilinx, Inc. Circuit and method for stress testing EEPROMS
US6002622A (en) * 1998-02-19 1999-12-14 Micron Technology, Inc. Device and method for margin testing a semiconductor memory by applying a stressing voltage simultaneously to complementary and true digit lines
JP4153091B2 (ja) 1998-07-10 2008-09-17 株式会社ルネサステクノロジ 半導体記憶装置
US6327682B1 (en) 1999-03-22 2001-12-04 Taiwan Semiconductor Manufacturing Company Wafer burn-in design for DRAM and FeRAM devices
JP2001084776A (ja) 1999-09-17 2001-03-30 Toshiba Corp 半導体記憶装置
JP2001176296A (ja) * 1999-12-10 2001-06-29 Fujitsu Ltd ストレス試験を行うダイナミックメモリデバイス
US6411557B2 (en) 2000-02-02 2002-06-25 Broadcom Corporation Memory architecture with single-port cell and dual-port (read and write) functionality
US6275427B1 (en) * 2000-04-19 2001-08-14 International Business Machines Corporation Stability test for silicon on insulator SRAM memory cells utilizing disturb operations to stress memory cells under test
US6643804B1 (en) * 2000-04-19 2003-11-04 International Business Machines Corporation Stability test for silicon on insulator SRAM memory cells utilizing bitline precharge stress operations to stress memory cells under test
KR100402103B1 (ko) * 2001-09-20 2003-10-17 주식회사 하이닉스반도체 웨이퍼 번-인 테스트 모드 및 웨이퍼 테스트 모드 회로
US6909648B2 (en) * 2002-03-19 2005-06-21 Broadcom Corporation Burn in system and method for improved memory reliability

Also Published As

Publication number Publication date
EP1347459A1 (de) 2003-09-24
US20050122805A1 (en) 2005-06-09
EP1347459B1 (de) 2006-09-06
US6909648B2 (en) 2005-06-21
US7411847B2 (en) 2008-08-12
US20030179635A1 (en) 2003-09-25
DE60308076T2 (de) 2007-04-19

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Representative=s name: BOSCH JEHLE PATENTANWALTSGESELLSCHAFT MBH, 80639 M