DE60309806D1 - Nichtflüchtige Silizium/Oxid/Nitrid/Silizium/Nitrid/Oxid/Silizium Speicheranordnung - Google Patents

Nichtflüchtige Silizium/Oxid/Nitrid/Silizium/Nitrid/Oxid/Silizium Speicheranordnung

Info

Publication number
DE60309806D1
DE60309806D1 DE60309806T DE60309806T DE60309806D1 DE 60309806 D1 DE60309806 D1 DE 60309806D1 DE 60309806 T DE60309806 T DE 60309806T DE 60309806 T DE60309806 T DE 60309806T DE 60309806 D1 DE60309806 D1 DE 60309806D1
Authority
DE
Germany
Prior art keywords
silicon
nitride
oxide
storage device
volatile
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60309806T
Other languages
English (en)
Other versions
DE60309806T2 (de
Inventor
Soo-Doo Chae
Ju-Hyung Kim
Chung-Woo Kim
Hee-Soon Chae
Won-Il Ryu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Application granted granted Critical
Publication of DE60309806D1 publication Critical patent/DE60309806D1/de
Publication of DE60309806T2 publication Critical patent/DE60309806T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28194—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401—Multistep manufacturing processes
    • H01L29/4011—Multistep manufacturing processes for data storage electrodes
    • H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401—Multistep manufacturing processes
    • H01L29/4011—Multistep manufacturing processes for data storage electrodes
    • H01L29/40117—Multistep manufacturing processes for data storage electrodes the electrodes comprising a charge-trapping insulator
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42324—Gate electrodes for transistors with a floating gate
    • H01L29/42332—Gate electrodes for transistors with a floating gate with the floating gate formed by two or more non connected parts, e.g. multi-particles flating gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
    • H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
    • H01L29/7885—Hot carrier injection from the channel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7887—Programmable transistors with more than two possible different levels of programmation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7888—Transistors programmable by two single electrons
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • G11C16/0475—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS] comprising two or more independent storage sites which store independent data
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
    • G11C2216/02—Structural aspects of erasable programmable read-only memories
    • G11C2216/06—Floating gate cells in which the floating gate consists of multiple isolated silicon islands, e.g. nanocrystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/518—Insulating materials associated therewith the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
DE60309806T 2002-10-14 2003-04-14 Nichtflüchtige Silizium/Oxid/Nitrid/Silizium/Nitrid/Oxid/Silizium Speicheranordnung Expired - Lifetime DE60309806T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2002-0062482A KR100446632B1 (ko) 2002-10-14 2002-10-14 비휘발성 ｓｏｎｓｎｏｓ 메모리
KR2002062482 2002-10-14

Publications (2)

Publication Number Publication Date
DE60309806D1 true DE60309806D1 (de) 2007-01-04
DE60309806T2 DE60309806T2 (de) 2007-09-13

Family

ID=32041006

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60309806T Expired - Lifetime DE60309806T2 (de) 2002-10-14 2003-04-14 Nichtflüchtige Silizium/Oxid/Nitrid/Silizium/Nitrid/Oxid/Silizium Speicheranordnung

Country Status (6)

Country Link
US (1) US6936884B2 (de)
EP (1) EP1411555B1 (de)
JP (1) JP5038580B2 (de)
KR (1) KR100446632B1 (de)
CN (1) CN1326244C (de)
DE (1) DE60309806T2 (de)

Families Citing this family (74)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7332768B2 (en) 2001-04-27 2008-02-19 Interuniversitair Microelektronica Centrum (Imec) Non-volatile memory devices
HUE027196T2 (hu) * 2002-09-06 2016-10-28 Genentech Inc Eljárás fehérjeextrakcióra
US7297634B2 (en) * 2003-06-06 2007-11-20 Marvell World Trade Ltd. Method and apparatus for semiconductor device and semiconductor memory device
US7759719B2 (en) * 2004-07-01 2010-07-20 Chih-Hsin Wang Electrically alterable memory cell
US7613041B2 (en) * 2003-06-06 2009-11-03 Chih-Hsin Wang Methods for operating semiconductor device and semiconductor memory device
US7550800B2 (en) * 2003-06-06 2009-06-23 Chih-Hsin Wang Method and apparatus transporting charges in semiconductor device and semiconductor memory device
EP1487013A3 (de) * 2003-06-10 2006-07-19 Samsung Electronics Co., Ltd. SONOS-Speicherzelle und Herstellungsverfahren derselben
EP1723676A4 (de) * 2004-03-10 2009-04-15 Nanosys Inc Speicherbausteine mit nano-fähigkeit und anisotrope ladungsträger-arrays
US20080203464A1 (en) * 2004-07-01 2008-08-28 Chih-Hsin Wang Electrically alterable non-volatile memory and array
KR100665186B1 (ko) 2004-08-14 2007-01-09 삼성전자주식회사 비휘발성 메모리 소자 및 그 제조 방법
US7355238B2 (en) * 2004-12-06 2008-04-08 Asahi Glass Company, Limited Nonvolatile semiconductor memory device having nanoparticles for charge retention
US7709334B2 (en) 2005-12-09 2010-05-04 Macronix International Co., Ltd. Stacked non-volatile memory device and methods for fabricating the same
US7315474B2 (en) 2005-01-03 2008-01-01 Macronix International Co., Ltd Non-volatile memory cells, memory arrays including the same and methods of operating cells and arrays
US8264028B2 (en) 2005-01-03 2012-09-11 Macronix International Co., Ltd. Non-volatile memory cells, memory arrays including the same and methods of operating cells and arrays
US7642585B2 (en) 2005-01-03 2010-01-05 Macronix International Co., Ltd. Non-volatile memory cells, memory arrays including the same and methods of operating cells and arrays
US8482052B2 (en) 2005-01-03 2013-07-09 Macronix International Co., Ltd. Silicon on insulator and thin film transistor bandgap engineered split gate memory
US7473589B2 (en) * 2005-12-09 2009-01-06 Macronix International Co., Ltd. Stacked thin film transistor, non-volatile memory devices and methods for fabricating the same
TWI297928B (en) * 2005-01-20 2008-06-11 Macronix Int Co Ltd Memory cell
KR20060095819A (ko) * 2005-02-28 2006-09-04 삼성전자주식회사 금속 질화물을 트랩 사이트로 이용한 메모리 소자를 그 제조 방법
US8709892B2 (en) * 2005-05-23 2014-04-29 Darpa Nanoparticles in a flash memory using chaperonin proteins
US7636257B2 (en) 2005-06-10 2009-12-22 Macronix International Co., Ltd. Methods of operating p-channel non-volatile memory devices
US7411244B2 (en) * 2005-06-28 2008-08-12 Chih-Hsin Wang Low power electrically alterable nonvolatile memory cells and arrays
US20070007576A1 (en) * 2005-07-07 2007-01-11 Samsung Electronics Co., Ltd. Multi-bit storageable non-volatile memory device
EP1903602A3 (de) * 2005-07-28 2009-04-01 Interuniversitair Microelektronica Centrum Vzw Nichtflüchtiger Speichertransistor
EP1748472A1 (de) * 2005-07-28 2007-01-31 Interuniversitair Microelektronica Centrum Vzw Nichtflüchtiger Speichertransistor
EP1748473A3 (de) * 2005-07-28 2009-04-01 INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM vzw (IMEC) Nichtflüchtiger Speichertransistor mit verteilten Ladungsspeicherstellen
US7576386B2 (en) 2005-08-04 2009-08-18 Macronix International Co., Ltd. Non-volatile memory semiconductor device having an oxide-nitride-oxide (ONO) top dielectric layer
US7763927B2 (en) 2005-12-15 2010-07-27 Macronix International Co., Ltd. Non-volatile memory device having a nitride-oxide dielectric layer
US7429767B2 (en) * 2005-09-01 2008-09-30 Micron Technology, Inc. High performance multi-level non-volatile memory device
US20070108502A1 (en) * 2005-11-17 2007-05-17 Sharp Laboratories Of America, Inc. Nanocrystal silicon quantum dot memory device
US7391652B2 (en) 2006-05-05 2008-06-24 Macronix International Co., Ltd. Method of programming and erasing a p-channel BE-SONOS NAND flash memory
US7907450B2 (en) 2006-05-08 2011-03-15 Macronix International Co., Ltd. Methods and apparatus for implementing bit-by-bit erase of a flash memory device
US7948799B2 (en) 2006-05-23 2011-05-24 Macronix International Co., Ltd. Structure and method of sub-gate NAND memory with bandgap engineered SONOS devices
US7414889B2 (en) 2006-05-23 2008-08-19 Macronix International Co., Ltd. Structure and method of sub-gate and architectures employing bandgap engineered SONOS devices
TWI300931B (en) 2006-06-20 2008-09-11 Macronix Int Co Ltd Method of operating non-volatile memory device
US7746694B2 (en) 2006-07-10 2010-06-29 Macronix International Co., Ltd. Nonvolatile memory array having modified channel region interface
US7560769B2 (en) 2006-08-03 2009-07-14 Micron Technology, Inc. Non-volatile memory cell device and methods
US7955935B2 (en) 2006-08-03 2011-06-07 Micron Technology, Inc. Non-volatile memory cell devices and methods
US7772068B2 (en) 2006-08-30 2010-08-10 Macronix International Co., Ltd. Method of manufacturing non-volatile memory
US7811890B2 (en) 2006-10-11 2010-10-12 Macronix International Co., Ltd. Vertical channel transistor structure and manufacturing method thereof
US8772858B2 (en) 2006-10-11 2014-07-08 Macronix International Co., Ltd. Vertical channel memory and manufacturing method thereof and operating method using the same
US8022466B2 (en) 2006-10-27 2011-09-20 Macronix International Co., Ltd. Non-volatile memory cells having a polysilicon-containing, multi-layer insulating structure, memory arrays including the same and methods of operating the same
US7851848B2 (en) 2006-11-01 2010-12-14 Macronix International Co., Ltd. Cylindrical channel charge trapping devices with effectively high coupling ratios
US8101989B2 (en) 2006-11-20 2012-01-24 Macronix International Co., Ltd. Charge trapping devices with field distribution layer over tunneling barrier
US7450423B2 (en) * 2007-01-03 2008-11-11 Macronix International Co., Ltd. Methods of operating non-volatile memory cells having an oxide/nitride multilayer insulating structure
KR101312258B1 (ko) * 2007-01-29 2013-09-25 삼성전자주식회사 플라즈몬 전달을 이용한 광메모리 소자
KR100877100B1 (ko) * 2007-04-16 2009-01-09 주식회사 하이닉스반도체 비휘발성 메모리 소자 제조 방법
CN101308868B (zh) * 2007-05-15 2013-03-06 中国科学院物理研究所 一种可用于存储单元的多层量子点结构浮置栅
US8012830B2 (en) * 2007-08-08 2011-09-06 Spansion Llc ORO and ORPRO with bit line trench to suppress transport program disturb
US7838923B2 (en) * 2007-08-09 2010-11-23 Macronix International Co., Ltd. Lateral pocket implant charge trapping devices
US20090039414A1 (en) 2007-08-09 2009-02-12 Macronix International Co., Ltd. Charge trapping memory cell with high speed erase
US7816727B2 (en) 2007-08-27 2010-10-19 Macronix International Co., Ltd. High-κ capped blocking dielectric bandgap engineered SONOS and MONOS
US20090096009A1 (en) * 2007-10-16 2009-04-16 Promos Technologies Pte. Ltd. Nonvolatile memories which combine a dielectric, charge-trapping layer with a floating gate
US7643349B2 (en) 2007-10-18 2010-01-05 Macronix International Co., Ltd. Efficient erase algorithm for SONOS-type NAND flash
US7848148B2 (en) 2007-10-18 2010-12-07 Macronix International Co., Ltd. One-transistor cell semiconductor on insulator random access memory
US8072023B1 (en) 2007-11-12 2011-12-06 Marvell International Ltd. Isolation for non-volatile memory cell array
KR100946120B1 (ko) * 2007-11-29 2010-03-10 주식회사 하이닉스반도체 반도체 메모리 소자 및 이의 제조 방법
US8120088B1 (en) 2007-12-07 2012-02-21 Marvell International Ltd. Non-volatile memory cell and array
US7816726B2 (en) * 2007-12-20 2010-10-19 Promos Technologies Pte. Ltd. Nonvolatile memories with laterally recessed charge-trapping dielectric
KR101416741B1 (ko) 2007-12-20 2014-08-07 삼성전자주식회사 비휘발성 기억 소자
US7973357B2 (en) * 2007-12-20 2011-07-05 Samsung Electronics Co., Ltd. Non-volatile memory devices
JP5210675B2 (ja) 2008-03-19 2013-06-12 株式会社東芝 不揮発性半導体記憶装置及びその製造方法
US20090251972A1 (en) * 2008-04-03 2009-10-08 Yue-Song He Nonvolatile memory arrays with charge trapping dielectric and with non-dielectric nanodots
US8068370B2 (en) 2008-04-18 2011-11-29 Macronix International Co., Ltd. Floating gate memory device with interpoly charge trapping structure
US8081516B2 (en) 2009-01-02 2011-12-20 Macronix International Co., Ltd. Method and apparatus to suppress fringing field interference of charge trapping NAND memory
US8861273B2 (en) 2009-04-21 2014-10-14 Macronix International Co., Ltd. Bandgap engineered charge trapping memory in two-transistor nor architecture
US9240405B2 (en) 2011-04-19 2016-01-19 Macronix International Co., Ltd. Memory with off-chip controller
JP5878797B2 (ja) * 2012-03-13 2016-03-08 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US8743599B2 (en) 2012-03-15 2014-06-03 International Business Machines Corporation Approach for phase change memory cells targeting different device specifications
US8987098B2 (en) 2012-06-19 2015-03-24 Macronix International Co., Ltd. Damascene word line
JP5787855B2 (ja) * 2012-09-21 2015-09-30 株式会社東芝 半導体記憶装置
US9379126B2 (en) 2013-03-14 2016-06-28 Macronix International Co., Ltd. Damascene conductor for a 3D device
US9099538B2 (en) 2013-09-17 2015-08-04 Macronix International Co., Ltd. Conductor with a plurality of vertical extensions for a 3D device
US9559113B2 (en) 2014-05-01 2017-01-31 Macronix International Co., Ltd. SSL/GSL gate oxide in 3D vertical channel NAND

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5550394B1 (de) * 1970-10-27 1980-12-17
JPS5532235B1 (de) * 1977-05-18 1980-08-23
JPS55142488A (en) * 1979-04-24 1980-11-07 Nec Corp Semiconductor nonvolatile memory unit
US5739569A (en) * 1991-05-15 1998-04-14 Texas Instruments Incorporated Non-volatile memory cell with oxide and nitride tunneling layers
JPH0536991A (ja) * 1991-07-31 1993-02-12 Nippon Steel Corp 半導体記憶装置
JPH0575133A (ja) * 1991-09-11 1993-03-26 Rohm Co Ltd 不揮発性記憶装置
JP3392540B2 (ja) * 1993-10-01 2003-03-31 松下電器産業株式会社 半導体メモリ装置及びその製造方法
US5714766A (en) * 1995-09-29 1998-02-03 International Business Machines Corporation Nano-structure memory device
DE19631146A1 (de) * 1996-08-01 1998-02-05 Siemens Ag Nichtflüchtige Speicherzelle
JP4162280B2 (ja) * 1996-11-15 2008-10-08 株式会社日立製作所 メモリデバイスおよびメモリアレイ回路
US5852306A (en) * 1997-01-29 1998-12-22 Micron Technology, Inc. Flash memory with nanocrystalline silicon film floating gate
JPH118325A (ja) * 1997-04-25 1999-01-12 Nippon Steel Corp 不揮発性半導体記憶装置、その製造方法、その書き込み方法、その読み出し方法、記録媒体並びに半導体記憶装置
KR19990030641A (ko) * 1997-10-02 1999-05-06 구본준 비휘발성 메모리 소자
US6319230B1 (en) * 1999-05-07 2001-11-20 Scimed Life Systems, Inc. Lateral needle injection apparatus and method
JP2001313342A (ja) * 1999-06-04 2001-11-09 Matsushita Electric Ind Co Ltd 半導体素子およびその製造方法
DE19955602A1 (de) * 1999-11-18 2001-05-31 Infineon Technologies Ag Nichtflüchtige Halbleiter- Speicherzelle sowie Verfahren zu deren Herstellung
JP4441993B2 (ja) * 2000-06-23 2010-03-31 ソニー株式会社 不揮発性半導体記憶装置およびその製造方法
US6465306B1 (en) * 2000-11-28 2002-10-15 Advanced Micro Devices, Inc. Simultaneous formation of charge storage and bitline to wordline isolation
JP2003068893A (ja) * 2001-08-28 2003-03-07 Hitachi Ltd 不揮発性記憶素子及び半導体集積回路
JP4056817B2 (ja) * 2002-07-23 2008-03-05 光正 小柳 不揮発性半導体記憶素子の製造方法

Also Published As

Publication number Publication date
EP1411555B1 (de) 2006-11-22
KR20040033406A (ko) 2004-04-28
JP5038580B2 (ja) 2012-10-03
EP1411555A2 (de) 2004-04-21
CN1490876A (zh) 2004-04-21
US20040079983A1 (en) 2004-04-29
KR100446632B1 (ko) 2004-09-04
EP1411555A3 (de) 2005-02-02
CN1326244C (zh) 2007-07-11
JP2004134796A (ja) 2004-04-30
US6936884B2 (en) 2005-08-30
DE60309806T2 (de) 2007-09-13

Similar Documents

Publication Publication Date Title
DE60309806D1 (de) Nichtflüchtige Silizium/Oxid/Nitrid/Silizium/Nitrid/Oxid/Silizium Speicheranordnung
DE60144340D1 (de) Nicht-flüchtiges SONOS-Halbleiterspeicherbauelement
DE60332081D1 (de) Nichtflüchtige Halbleiterspeicheranordnung
EP1416540B8 (de) Halbleiterfestwertspeicher-bauelement
DE60239899D1 (de) Nichtflüchtige Halbleiterspeicheranordnung
AU2003226646A8 (en) Semiconductor device
DE60326116D1 (de) Nichtflüchtige Speicherzelle und nichtflüchtige Halbleiterspeicheranordnung
TWI346954B (en) Nonvolatile semiconductor memory device
DE60314068D1 (de) Nichtflüchtiger Halbleiterspeicher
DE60121865D1 (de) Nichtflüchtige Halbleiterspeicheranordnung
DE60331799D1 (de) Halbleitervorrichtung
AU2003277266A8 (en) Semiconductor device package
DE60126383D1 (de) Nichtflüchtige Halbleiterspeicheranordnung
EP1667241A4 (de) Halbleiterbauelement
AU2003234812A8 (en) Semiconductor device
EP1605523A4 (de) Halbleiterbauelement
EP1617475A4 (de) Halbleiterbauelement
DE60122045D1 (de) Nichtflüchtige Halbleiterspeicheranordnung
EP1624358A4 (de) Halbleiterbauelement
TWI319261B (en) Semiconductor device
SG113506A1 (en) Nonvolatile semiconductor memory device
GB2406970B (en) Semiconductor device
EP1619570A4 (de) Halbleiterbauelement
EP1533845A4 (de) Halbleiterspeicherelement und seine lebenszeit-betriebsstarteinrichtung
DE60218009D1 (de) Halbleiterspeichervorrichtung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition