DE60313636D1 - Nanokristalline schichten und verbesserte mram-tunnelsperrschichten - Google Patents

Nanokristalline schichten und verbesserte mram-tunnelsperrschichten

Info

Publication number
DE60313636D1
DE60313636D1 DE60313636T DE60313636T DE60313636D1 DE 60313636 D1 DE60313636 D1 DE 60313636D1 DE 60313636 T DE60313636 T DE 60313636T DE 60313636 T DE60313636 T DE 60313636T DE 60313636 D1 DE60313636 D1 DE 60313636D1
Authority
DE
Germany
Prior art keywords
interruptions
layer
nanocrystalline layers
tunnel
improved mram
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60313636T
Other languages
English (en)
Other versions
DE60313636T2 (de
Inventor
Jon M Slaughter
Renu W Dave
Jijun Sun
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP USA Inc
Original Assignee
Freescale Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Freescale Semiconductor Inc filed Critical Freescale Semiconductor Inc
Application granted granted Critical
Publication of DE60313636D1 publication Critical patent/DE60313636D1/de
Publication of DE60313636T2 publication Critical patent/DE60313636T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
    • H01F10/3272—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/30—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE]
    • H01F41/302—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/4902—Electromagnet, transformer or inductor
    • Y10T29/49021—Magnetic recording reproducing transducer [e.g., tape head, core, etc.]
    • Y10T29/49032—Fabricating head structure or component thereof
    • Y10T29/49036—Fabricating head structure or component thereof including measuring or testing
    • Y10T29/49043—Depositing magnetic layer or coating
    • Y10T29/49044—Plural magnetic deposition layers
DE60313636T 2002-08-30 2003-07-24 Nanokristalline schichten und verbesserte mram-tunnelsperrschichten Expired - Fee Related DE60313636T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/232,111 US6801415B2 (en) 2002-08-30 2002-08-30 Nanocrystalline layers for improved MRAM tunnel junctions
US232111 2002-08-30
PCT/US2003/023063 WO2004107370A2 (en) 2002-08-30 2003-07-24 Nanocrystalline layers and improved mram tunnel junctions

Publications (2)

Publication Number Publication Date
DE60313636D1 true DE60313636D1 (de) 2007-06-14
DE60313636T2 DE60313636T2 (de) 2007-08-30

Family

ID=31976922

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60313636T Expired - Fee Related DE60313636T2 (de) 2002-08-30 2003-07-24 Nanokristalline schichten und verbesserte mram-tunnelsperrschichten

Country Status (10)

Country Link
US (1) US6801415B2 (de)
EP (1) EP1547102B1 (de)
JP (1) JP2006506828A (de)
KR (1) KR101036124B1 (de)
CN (1) CN100339915C (de)
AT (1) ATE361536T1 (de)
AU (1) AU2003304170A1 (de)
DE (1) DE60313636T2 (de)
TW (1) TWI311754B (de)
WO (1) WO2004107370A2 (de)

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US6992910B1 (en) * 2004-11-18 2006-01-31 Maglabs, Inc. Magnetic random access memory with three or more stacked toggle memory cells and method for writing a selected cell
US7251110B2 (en) * 2005-01-18 2007-07-31 Hitachi Global Storage Technologies Netherlands B.V. GMR sensor having layers treated with nitrogen for increased magnetoresistance
US7672094B2 (en) * 2005-01-18 2010-03-02 Hitachi Global Storage Technologies Netherlands B.V. TMR sensor having an under-layer treated with nitrogen for increased magnetoresistance
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US8535952B2 (en) * 2006-02-25 2013-09-17 Avalanche Technology, Inc. Method for manufacturing non-volatile magnetic memory
US8120949B2 (en) * 2006-04-27 2012-02-21 Avalanche Technology, Inc. Low-cost non-volatile flash-RAM memory
US8542524B2 (en) * 2007-02-12 2013-09-24 Avalanche Technology, Inc. Magnetic random access memory (MRAM) manufacturing process for a small magnetic tunnel junction (MTJ) design with a low programming current requirement
US20090218645A1 (en) * 2007-02-12 2009-09-03 Yadav Technology Inc. multi-state spin-torque transfer magnetic random access memory
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Also Published As

Publication number Publication date
KR101036124B1 (ko) 2011-05-23
AU2003304170A8 (en) 2005-01-21
US6801415B2 (en) 2004-10-05
TW200405335A (en) 2004-04-01
AU2003304170A1 (en) 2005-01-21
DE60313636T2 (de) 2007-08-30
ATE361536T1 (de) 2007-05-15
CN1679121A (zh) 2005-10-05
CN100339915C (zh) 2007-09-26
JP2006506828A (ja) 2006-02-23
WO2004107370A2 (en) 2004-12-09
EP1547102A2 (de) 2005-06-29
TWI311754B (en) 2009-07-01
US20040042128A1 (en) 2004-03-04
KR20050036985A (ko) 2005-04-20
WO2004107370A3 (en) 2005-02-03
EP1547102B1 (de) 2007-05-02

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