DE60313877D1 - Halbleiterlasermodul mit verbesserter wellenlängenstabilität - Google Patents

Halbleiterlasermodul mit verbesserter wellenlängenstabilität

Info

Publication number
DE60313877D1
DE60313877D1 DE60313877T DE60313877T DE60313877D1 DE 60313877 D1 DE60313877 D1 DE 60313877D1 DE 60313877 T DE60313877 T DE 60313877T DE 60313877 T DE60313877 T DE 60313877T DE 60313877 D1 DE60313877 D1 DE 60313877D1
Authority
DE
Germany
Prior art keywords
semiconductor laser
laser module
shaft length
improved shaft
length stability
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60313877T
Other languages
English (en)
Inventor
Berthold Schmidt
Boris Sverdlov
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lumentum Technology UK Ltd
Original Assignee
Bookham Technology PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bookham Technology PLC filed Critical Bookham Technology PLC
Application granted granted Critical
Publication of DE60313877D1 publication Critical patent/DE60313877D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0656—Seeding, i.e. an additional light input is provided for controlling the laser modes, for example by back-reflecting light from an external optical component
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/146—External cavity lasers using a fiber as external cavity

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE60313877T 2002-09-11 2003-09-03 Halbleiterlasermodul mit verbesserter wellenlängenstabilität Expired - Lifetime DE60313877D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/242,497 US6819702B2 (en) 2002-09-11 2002-09-11 Pump laser diode with improved wavelength stability
PCT/GB2003/003820 WO2004025795A1 (en) 2002-09-11 2003-09-03 Pump laser diode with improved wavelength stability

Publications (1)

Publication Number Publication Date
DE60313877D1 true DE60313877D1 (de) 2007-06-28

Family

ID=31991422

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60313877T Expired - Lifetime DE60313877D1 (de) 2002-09-11 2003-09-03 Halbleiterlasermodul mit verbesserter wellenlängenstabilität

Country Status (5)

Country Link
US (1) US6819702B2 (de)
EP (1) EP1540787B1 (de)
AU (1) AU2003260776A1 (de)
DE (1) DE60313877D1 (de)
WO (1) WO2004025795A1 (de)

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US7361171B2 (en) 2003-05-20 2008-04-22 Raydiance, Inc. Man-portable optical ablation system
US9022037B2 (en) 2003-08-11 2015-05-05 Raydiance, Inc. Laser ablation method and apparatus having a feedback loop and control unit
US8173929B1 (en) 2003-08-11 2012-05-08 Raydiance, Inc. Methods and systems for trimming circuits
US8921733B2 (en) 2003-08-11 2014-12-30 Raydiance, Inc. Methods and systems for trimming circuits
US20090310634A1 (en) * 2004-04-27 2009-12-17 Oclaro Stabilized laser source with very high relative feedback and narrow bandwidth
EP1779478A2 (de) * 2004-06-24 2007-05-02 Koheras A/S System mit einem wellenleiterlaser mit geringem phasenrauschen und verfahren zu seiner herstellung und verwendung
US8135050B1 (en) 2005-07-19 2012-03-13 Raydiance, Inc. Automated polarization correction
US7444049B1 (en) 2006-01-23 2008-10-28 Raydiance, Inc. Pulse stretcher and compressor including a multi-pass Bragg grating
US8189971B1 (en) 2006-01-23 2012-05-29 Raydiance, Inc. Dispersion compensation in a chirped pulse amplification system
US8232687B2 (en) 2006-04-26 2012-07-31 Raydiance, Inc. Intelligent laser interlock system
US9130344B2 (en) 2006-01-23 2015-09-08 Raydiance, Inc. Automated laser tuning
US7822347B1 (en) 2006-03-28 2010-10-26 Raydiance, Inc. Active tuning of temporal dispersion in an ultrashort pulse laser system
US7669423B2 (en) * 2007-01-25 2010-03-02 Michael Nakhamkin Operating method for CAES plant using humidified air in a bottoming cycle expander
JP2008244300A (ja) * 2007-03-28 2008-10-09 Mitsubishi Electric Corp 半導体レーザ
US7903326B2 (en) 2007-11-30 2011-03-08 Radiance, Inc. Static phase mask for high-order spectral phase control in a hybrid chirped pulse amplifier system
US8125704B2 (en) 2008-08-18 2012-02-28 Raydiance, Inc. Systems and methods for controlling a pulsed laser by combining laser signals
CN107017555B (zh) * 2010-01-08 2018-11-06 Ii－Vi 激光企业有限责任公司 具有高线性度输出的激光系统
KR20140018183A (ko) 2010-09-16 2014-02-12 레이디안스, 아이엔씨. 적층 재료의 레이저 기반 처리
US8554037B2 (en) 2010-09-30 2013-10-08 Raydiance, Inc. Hybrid waveguide device in powerful laser systems
GB2484334A (en) 2010-10-07 2012-04-11 Oclaro Technology Ltd Semiconductor laser device and method for stabilising the wavelength of a semiconductor laser device
US8573785B2 (en) * 2010-11-23 2013-11-05 Corning Incorporated Wavelength-switched optical systems
US9184564B2 (en) * 2013-06-07 2015-11-10 Ngk Insulators, Ltd. External resonator type light emitting system
US9331454B2 (en) 2013-11-27 2016-05-03 Ngk Insulators, Ltd. External resonator type light emitting system
CN105765802B (zh) 2013-11-27 2020-01-07 日本碍子株式会社 外部谐振器型发光装置
US10186829B2 (en) 2016-05-10 2019-01-22 Ii-Vi Incorporated Compact laser source with wavelength stabilized output

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4358851A (en) * 1980-02-28 1982-11-09 Xerox Corporation Fiber optic laser device and light emitter utilizing the device
JPS58110087A (ja) 1981-12-24 1983-06-30 Fujitsu Ltd 半導体レ−ザ装置
US5056099A (en) 1990-09-10 1991-10-08 General Dynamics Corp., Electronics Division Rugate filter on diode laser for temperature stabilized emission wavelength
US5978400A (en) * 1995-03-07 1999-11-02 British Telecommunications Public Limited Company Laser
US6021141A (en) * 1996-03-29 2000-02-01 Sdl, Inc. Tunable blue laser diode
EP0898345A3 (de) * 1997-08-13 2004-01-02 Mitsubishi Chemical Corporation Lichtemittierende Halbleitervorrichtung und Herstellungsverfahren
JPH11214799A (ja) 1998-01-26 1999-08-06 Furukawa Electric Co Ltd:The 半導体レーザモジュール
ITTO980306A1 (it) * 1998-04-10 1999-10-10 Cselt Centro Studi Lab Telec O Modulo laser a cavita' esterna con riflettore in fibra ottica.
US6693946B2 (en) * 2001-07-05 2004-02-17 Lucent Technologies Inc. Wavelength-tunable lasers
US6778583B2 (en) * 2001-09-21 2004-08-17 Adc Telecommunications, Inc. Three-cavity stabilized laser system

Also Published As

Publication number Publication date
US6819702B2 (en) 2004-11-16
AU2003260776A1 (en) 2004-04-30
EP1540787A1 (de) 2005-06-15
US20040047390A1 (en) 2004-03-11
EP1540787B1 (de) 2007-05-16
WO2004025795A1 (en) 2004-03-25

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Legal Events

Date Code Title Description
8332 No legal effect for de