DE60317551D1 - Aufrechterhaltung gleichförmiger löschhäufigkeit in einem nichtflüchtigen speichersystem - Google Patents

Aufrechterhaltung gleichförmiger löschhäufigkeit in einem nichtflüchtigen speichersystem

Info

Publication number
DE60317551D1
DE60317551D1 DE60317551T DE60317551T DE60317551D1 DE 60317551 D1 DE60317551 D1 DE 60317551D1 DE 60317551 T DE60317551 T DE 60317551T DE 60317551 T DE60317551 T DE 60317551T DE 60317551 D1 DE60317551 D1 DE 60317551D1
Authority
DE
Germany
Prior art keywords
storage system
volatile storage
block
average
blocks
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60317551T
Other languages
English (en)
Other versions
DE60317551T2 (de
Inventor
Robert Chang
Bahman Qawami
Farshid Sabet-Sharghi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SanDisk Corp
Original Assignee
SanDisk Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SanDisk Corp filed Critical SanDisk Corp
Application granted granted Critical
Publication of DE60317551D1 publication Critical patent/DE60317551D1/de
Publication of DE60317551T2 publication Critical patent/DE60317551T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/023—Free address space management
    • G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
    • G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
    • G11C16/3495—Circuits or methods to detect or delay wearout of nonvolatile EPROM or EEPROM memory devices, e.g. by counting numbers of erase or reprogram cycles, by using multiple memory areas serially or cyclically
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/72—Details relating to flash memory management
    • G06F2212/7211—Wear leveling
DE60317551T 2002-10-28 2003-09-10 Aufrechterhaltung gleichförmiger löschhäufigkeit in einem nichtflüchtigen speichersystem Expired - Fee Related DE60317551T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US281823 2002-10-28
US10/281,823 US7035967B2 (en) 2002-10-28 2002-10-28 Maintaining an average erase count in a non-volatile storage system
PCT/US2003/028215 WO2004040584A1 (en) 2002-10-28 2003-09-10 Maintaining an average erase count in a non-volatile storage system

Publications (2)

Publication Number Publication Date
DE60317551D1 true DE60317551D1 (de) 2007-12-27
DE60317551T2 DE60317551T2 (de) 2008-09-18

Family

ID=32228776

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60317551T Expired - Fee Related DE60317551T2 (de) 2002-10-28 2003-09-10 Aufrechterhaltung gleichförmiger löschhäufigkeit in einem nichtflüchtigen speichersystem

Country Status (10)

Country Link
US (2) US7035967B2 (de)
EP (1) EP1559112B1 (de)
JP (1) JP4758648B2 (de)
KR (1) KR20050067203A (de)
CN (1) CN1701389A (de)
AT (1) ATE378684T1 (de)
AU (1) AU2003270449A1 (de)
DE (1) DE60317551T2 (de)
TW (1) TWI247292B (de)
WO (1) WO2004040584A1 (de)

Families Citing this family (150)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100483552C (zh) * 2002-10-28 2009-04-29 桑迪士克股份有限公司 在非易失性存储系统中执行自动磨损平衡的方法
US7328301B2 (en) * 2003-04-07 2008-02-05 Intel Corporation Dynamically mapping block-alterable memories
US20050055495A1 (en) * 2003-09-05 2005-03-10 Nokia Corporation Memory wear leveling
US7559004B1 (en) * 2003-10-01 2009-07-07 Sandisk Corporation Dynamic redundant area configuration in a non-volatile memory system
US20050114588A1 (en) * 2003-11-26 2005-05-26 Lucker Jonathan C. Method and apparatus to improve memory performance
US20050132128A1 (en) * 2003-12-15 2005-06-16 Jin-Yub Lee Flash memory device and flash memory system including buffer memory
KR100568115B1 (ko) 2004-06-30 2006-04-05 삼성전자주식회사 점진적 머지 방법 및 그것을 이용한 메모리 시스템
JP4527456B2 (ja) * 2004-07-06 2010-08-18 Ｎｅｃインフロンティア株式会社 メモリ寿命警告装置、および情報処理方法
US7441067B2 (en) 2004-11-15 2008-10-21 Sandisk Corporation Cyclic flash memory wear leveling
US7363421B2 (en) * 2005-01-13 2008-04-22 Stmicroelectronics S.R.L. Optimizing write/erase operations in memory devices
US7315917B2 (en) 2005-01-20 2008-01-01 Sandisk Corporation Scheduling of housekeeping operations in flash memory systems
US7552271B2 (en) * 2005-08-03 2009-06-23 Sandisk Corporation Nonvolatile memory with block management
US7984084B2 (en) * 2005-08-03 2011-07-19 SanDisk Technologies, Inc. Non-volatile memory with scheduled reclaim operations
US7558906B2 (en) * 2005-08-03 2009-07-07 Sandisk Corporation Methods of managing blocks in nonvolatile memory
US20070174549A1 (en) * 2006-01-24 2007-07-26 Yevgen Gyl Method for utilizing a memory interface to control partitioning of a memory module
US20070208904A1 (en) * 2006-03-03 2007-09-06 Wu-Han Hsieh Wear leveling method and apparatus for nonvolatile memory
GB0606639D0 (en) * 2006-04-01 2006-05-10 Ibm Non-disruptive file system element reconfiguration on disk expansion
FR2899716A1 (fr) * 2006-04-07 2007-10-12 St Microelectronics Sa Procede de securisation de blocs de donnees dans une memoire programmable electriquement
US7778077B2 (en) * 2006-05-15 2010-08-17 Sandisk Corporation Non-volatile memory system with end of life calculation
US7971071B2 (en) * 2006-05-24 2011-06-28 Walkoe Wilbur J Integrated delivery and protection device for digital objects
JP4645538B2 (ja) * 2006-06-29 2011-03-09 ソニー株式会社 記録装置および寿命情報算出方法
US7536500B2 (en) * 2006-09-29 2009-05-19 Intel Corporation Header blocks for flash memory writes
US20080091871A1 (en) * 2006-10-12 2008-04-17 Alan David Bennett Non-volatile memory with worst-case control data management
US20080091901A1 (en) * 2006-10-12 2008-04-17 Alan David Bennett Method for non-volatile memory with worst-case control data management
US8079071B2 (en) 2006-11-14 2011-12-13 SanDisk Technologies, Inc. Methods for accessing content based on a session ticket
US7904764B2 (en) * 2006-11-24 2011-03-08 Sandforce, Inc. Memory lifetime gauging system, method and computer program product
US7904619B2 (en) * 2006-11-24 2011-03-08 Sandforce, Inc. System, method, and computer program product for reducing memory write operations using difference information
WO2008063647A2 (en) * 2006-11-24 2008-05-29 Sandforce Inc. Delaying an operation that reduces a lifetime of memory
US7809900B2 (en) * 2006-11-24 2010-10-05 Sandforce, Inc. System, method, and computer program product for delaying an operation that reduces a lifetime of memory
US20080126685A1 (en) * 2006-11-24 2008-05-29 Radoslav Danilak System, method, and computer program product for reducing memory write operations using an instruction set
US7747813B2 (en) * 2006-11-24 2010-06-29 Sandforce, Inc. Multi-memory device system and method for managing a lifetime thereof
US8090980B2 (en) * 2006-12-08 2012-01-03 Sandforce, Inc. System, method, and computer program product for providing data redundancy in a plurality of storage devices
US7904672B2 (en) 2006-12-08 2011-03-08 Sandforce, Inc. System and method for providing data redundancy after reducing memory writes
US9153337B2 (en) 2006-12-11 2015-10-06 Marvell World Trade Ltd. Fatigue management system and method for hybrid nonvolatile solid state memory system
US7710777B1 (en) * 2006-12-20 2010-05-04 Marvell International Ltd. Semi-volatile NAND flash memory
KR100817204B1 (ko) * 2006-12-22 2008-03-27 재단법인서울대학교산학협력재단 플래시 메모리의 매핑 방법 및 장치
JP5006940B2 (ja) * 2006-12-27 2012-08-22 インテル・コーポレーション 不揮発性メモリのイニシアチブウェアレベリング
ATE517372T1 (de) * 2007-01-24 2011-08-15 Oce Tech Bv Bilderzeugungsvorrichtung mit funktion zum zählen der von der vorrichtung angezeigten bilder
JP5134255B2 (ja) * 2007-01-30 2013-01-30 富士通株式会社 データ記録システム
US7925151B2 (en) * 2007-01-31 2011-04-12 Kobre Kenneth R Device for redirecting and reflecting light from camera flash and methods for using same
US7731365B2 (en) * 2007-03-19 2010-06-08 Johnson&Johnson Vision Care, Inc. Method of fitting contact lenses
US7689762B2 (en) * 2007-05-03 2010-03-30 Atmel Corporation Storage device wear leveling
US7743203B2 (en) * 2007-05-11 2010-06-22 Spansion Llc Managing flash memory based upon usage history
US20080294814A1 (en) * 2007-05-24 2008-11-27 Sergey Anatolievich Gorobets Flash Memory System with Management of Housekeeping Operations
US20080294813A1 (en) * 2007-05-24 2008-11-27 Sergey Anatolievich Gorobets Managing Housekeeping Operations in Flash Memory
KR100857761B1 (ko) * 2007-06-14 2008-09-10 삼성전자주식회사 웨어 레벨링을 수행하는 메모리 시스템 및 그것의 쓰기방법
KR101413736B1 (ko) * 2007-09-13 2014-07-02 삼성전자주식회사 향상된 신뢰성을 갖는 메모리 시스템 및 그것의웨어-레벨링 기법
TW200919448A (en) * 2007-10-17 2009-05-01 Silicon Motion Inc Storage device and method of accessing a status thereof
US7916543B2 (en) 2007-10-22 2011-03-29 Micron Technology, Inc. Memory cell operation
US8296498B2 (en) * 2007-11-13 2012-10-23 Sandisk Technologies Inc. Method and system for virtual fast access non-volatile RAM
TWM332248U (en) * 2007-11-16 2008-05-11 Carry Technology Co Ltd Display apparatus for phonic recording and playing electronically digital picture
US7903486B2 (en) * 2007-11-19 2011-03-08 Sandforce, Inc. System, method, and computer program product for increasing a lifetime of a plurality of blocks of memory
US7849275B2 (en) 2007-11-19 2010-12-07 Sandforce, Inc. System, method and a computer program product for writing data to different storage devices based on write frequency
US9183133B2 (en) 2007-11-28 2015-11-10 Seagate Technology Llc System, method, and computer program product for increasing spare space in memory to extend a lifetime of the memory
JP4461170B2 (ja) * 2007-12-28 2010-05-12 株式会社東芝 メモリシステム
TWI354996B (en) 2007-12-31 2011-12-21 Phison Electronics Corp Wear leveling method and controller thereof
CN101499315B (zh) * 2008-01-30 2011-11-23 群联电子股份有限公司 快闪存储器平均磨损方法及其控制器
US7925822B2 (en) * 2008-01-31 2011-04-12 Sandisk Il Ltd Erase count recovery
JP2009266349A (ja) 2008-04-28 2009-11-12 Toshiba Corp 不揮発性半導体記憶装置
JP2009271848A (ja) * 2008-05-09 2009-11-19 Fujitsu Microelectronics Ltd ファイルシステム及びデータ管理方法
US7924623B2 (en) * 2008-05-27 2011-04-12 Micron Technology, Inc. Method for memory cell erasure with a programming monitor of reference cells
US8120959B2 (en) * 2008-05-30 2012-02-21 Aplus Flash Technology, Inc. NAND string based NAND/NOR flash memory cell, array, and memory device having parallel bit lines and source lines, having a programmable select gating transistor, and circuits and methods for operating same
WO2009145923A1 (en) * 2008-05-30 2009-12-03 Aplus Flash Technology, Inc. Nand string based flash memory device, array and circuit having parallel bit lines and source lines
US20100017588A1 (en) * 2008-07-15 2010-01-21 Radoslav Danilak System, method, and computer program product for providing an extended capability to a system
US20100017566A1 (en) * 2008-07-15 2010-01-21 Radoslav Danilak System, method, and computer program product for interfacing computing device hardware of a computing device and an operating system utilizing a virtualization layer
TWI385669B (zh) * 2008-07-23 2013-02-11 Phison Electronics Corp 用於快閃記憶體的平均磨損方法、儲存系統與控制器
US20100064093A1 (en) * 2008-09-09 2010-03-11 Radoslav Danilak System, method, and computer program product for converting data in a binary representation to a non-power of two representation
CN101354681B (zh) * 2008-09-23 2010-12-01 美商威睿电通公司 存储器系统、非易失性存储器的磨损均衡方法及装置
TWI470428B (zh) * 2008-10-03 2015-01-21 Phison Electronics Corp 用於非揮發性記憶體的資料程式規劃系統、記憶體管理方法及其控制器
US8001318B1 (en) * 2008-10-28 2011-08-16 Netapp, Inc. Wear leveling for low-wear areas of low-latency random read memory
KR101548175B1 (ko) * 2008-11-05 2015-08-28 삼성전자주식회사 싱글 레벨 메모리 셀 블락과 멀티 레벨 메모리 셀 블락을 포함하는 불휘발성 메모리 장치의 마모 레벨링 방법
US9063874B2 (en) * 2008-11-10 2015-06-23 SanDisk Technologies, Inc. Apparatus, system, and method for wear management
US9170897B2 (en) 2012-05-29 2015-10-27 SanDisk Technologies, Inc. Apparatus, system, and method for managing solid-state storage reliability
US8825940B1 (en) 2008-12-02 2014-09-02 Siliconsystems, Inc. Architecture for optimizing execution of storage access commands
US20100146236A1 (en) * 2008-12-08 2010-06-10 Radoslav Danilak System, method, and computer program product for rendering at least a portion of data useless in immediate response to a delete command
WO2010076829A1 (en) * 2008-12-30 2010-07-08 Massimo Iaculo Wear leveling for erasable memories
KR101033465B1 (ko) * 2008-12-30 2011-05-09 주식회사 하이닉스반도체 플래쉬 메모리 장치 및 및 이를 위한 리드동작 제어 방법
US8700840B2 (en) 2009-01-05 2014-04-15 SanDisk Technologies, Inc. Nonvolatile memory with write cache having flush/eviction methods
US8040744B2 (en) 2009-01-05 2011-10-18 Sandisk Technologies Inc. Spare block management of non-volatile memories
US8094500B2 (en) 2009-01-05 2012-01-10 Sandisk Technologies Inc. Non-volatile memory and method with write cache partitioning
US8244960B2 (en) 2009-01-05 2012-08-14 Sandisk Technologies Inc. Non-volatile memory and method with write cache partition management methods
US9176859B2 (en) * 2009-01-07 2015-11-03 Siliconsystems, Inc. Systems and methods for improving the performance of non-volatile memory operations
US8120966B2 (en) * 2009-02-05 2012-02-21 Aplus Flash Technology, Inc. Method and apparatus for management of over-erasure in NAND-based NOR-type flash memory
TWI409819B (zh) * 2009-03-03 2013-09-21 Silicon Motion Inc 平均地使用一快閃記憶體的複數個區塊之方法以及相關之記憶裝置及其控制器
US10079048B2 (en) * 2009-03-24 2018-09-18 Western Digital Technologies, Inc. Adjusting access of non-volatile semiconductor memory based on access time
US8090905B2 (en) * 2009-03-27 2012-01-03 Sandforce, Inc. System, method, and computer program product for converting logical block address de-allocation information in a first format to a second format
US8671258B2 (en) 2009-03-27 2014-03-11 Lsi Corporation Storage system logical block address de-allocation management
US20100250830A1 (en) * 2009-03-27 2010-09-30 Ross John Stenfort System, method, and computer program product for hardening data stored on a solid state disk
US8230159B2 (en) 2009-03-27 2012-07-24 Lsi Corporation System, method, and computer program product for sending logical block address de-allocation status information
US8516264B2 (en) * 2009-10-09 2013-08-20 Lsi Corporation Interlocking plain text passwords to data encryption keys
US8245112B2 (en) * 2009-06-04 2012-08-14 Lsi Corporation Flash memory organization
US8868809B2 (en) * 2009-11-30 2014-10-21 Lsi Corporation Interrupt queuing in a media controller architecture
US20100306451A1 (en) * 2009-06-01 2010-12-02 Joshua Johnson Architecture for nand flash constraint enforcement
US8555141B2 (en) * 2009-06-04 2013-10-08 Lsi Corporation Flash memory organization
US8166258B2 (en) * 2009-07-24 2012-04-24 Lsi Corporation Skip operations for solid state disks
US8219776B2 (en) * 2009-09-23 2012-07-10 Lsi Corporation Logical-to-physical address translation for solid state disks
US8321639B2 (en) * 2009-12-30 2012-11-27 Lsi Corporation Command tracking for direct access block storage devices
US8051241B2 (en) 2009-05-07 2011-11-01 Seagate Technology Llc Wear leveling technique for storage devices
US8250282B2 (en) * 2009-05-14 2012-08-21 Micron Technology, Inc. PCM memories for storage bus interfaces
US20110004718A1 (en) * 2009-07-02 2011-01-06 Ross John Stenfort System, method, and computer program product for ordering a plurality of write commands associated with a storage device
US9792074B2 (en) * 2009-07-06 2017-10-17 Seagate Technology Llc System, method, and computer program product for interfacing one or more storage devices with a plurality of bridge chips
US8140712B2 (en) * 2009-07-17 2012-03-20 Sandforce, Inc. System, method, and computer program product for inserting a gap in information sent from a drive to a host device
US8516166B2 (en) * 2009-07-20 2013-08-20 Lsi Corporation System, method, and computer program product for reducing a rate of data transfer to at least a portion of memory
US8447915B2 (en) * 2009-07-23 2013-05-21 Hitachi, Ltd. Flash memory device for allocating physical blocks to logical blocks based on an erase count
US8108737B2 (en) * 2009-10-05 2012-01-31 Sandforce, Inc. System, method, and computer program product for sending failure information from a serial ATA (SATA) solid state drive (SSD) to a host device
TWI436369B (zh) * 2009-11-13 2014-05-01 Silicon Motion Inc 記憶裝置之使用壽命量測方法及系統內編程碼置換方法、及其資料儲存系統
JP4912456B2 (ja) * 2009-12-17 2012-04-11 株式会社日立製作所 ストレージ装置及びその制御方法
US8856488B2 (en) * 2010-02-11 2014-10-07 Memory Technologies Llc Method for utilizing a memory interface to control partitioning of a memory module
CN102201259A (zh) * 2010-03-24 2011-09-28 建兴电子科技股份有限公司 非易失性存储器的平均抹写方法
US9104546B2 (en) * 2010-05-24 2015-08-11 Silicon Motion Inc. Method for performing block management using dynamic threshold, and associated memory device and controller thereof
CN102543177B (zh) * 2010-12-17 2016-01-06 西安奇维测控科技有限公司 一种固态盘静态磨损平衡算法
CN102592676A (zh) * 2011-01-17 2012-07-18 上海华虹集成电路有限责任公司 一种可回收使用的Nandflash存储系统
US8874872B2 (en) 2011-01-21 2014-10-28 Seagate Technology Llc Garbage collection management in memories
US10049040B2 (en) 2011-01-21 2018-08-14 Seagate Technology Llc Just in time garbage collection
CN102637145B (zh) * 2011-02-11 2015-06-17 慧荣科技股份有限公司 用来进行区块管理的方法、记忆装置及其控制器
US8947941B2 (en) * 2012-02-09 2015-02-03 Densbits Technologies Ltd. State responsive operations relating to flash memory cells
US9116792B2 (en) * 2012-05-18 2015-08-25 Silicon Motion, Inc. Data storage device and method for flash block management
US8930612B2 (en) * 2012-05-31 2015-01-06 Seagate Technology Llc Background deduplication of data sets in a memory
JP2013254357A (ja) * 2012-06-07 2013-12-19 Sony Corp 情報処理装置および方法、並びにプログラム
US8898405B2 (en) * 2012-06-12 2014-11-25 Storart Technology Co. Ltd Method for static wear leveling in non-violate storage device
US8750045B2 (en) 2012-07-27 2014-06-10 Sandisk Technologies Inc. Experience count dependent program algorithm for flash memory
CN102866863B (zh) * 2012-08-23 2016-09-21 深圳Tcl新技术有限公司 嵌入式多媒体卡数据迁移方法、系统层和嵌入式设备
CN102880556B (zh) * 2012-09-12 2015-05-20 浙江大学 一种实现Nand Flash磨损均衡的方法及其系统
US9013922B2 (en) * 2012-09-20 2015-04-21 Silicon Motion, Inc. Data storage device and flash memory control method thereof
US9430339B1 (en) 2012-12-27 2016-08-30 Marvell International Ltd. Method and apparatus for using wear-out blocks in nonvolatile memory
US9292451B2 (en) 2013-02-19 2016-03-22 Qualcomm Incorporated Methods and apparatus for intra-set wear-leveling for memories with limited write endurance
US9348743B2 (en) 2013-02-21 2016-05-24 Qualcomm Incorporated Inter-set wear-leveling for caches with limited write endurance
US9117533B2 (en) * 2013-03-13 2015-08-25 Sandisk Technologies Inc. Tracking erase operations to regions of non-volatile memory
US9153331B2 (en) * 2013-03-13 2015-10-06 Sandisk Technologies Inc. Tracking cell erase counts of non-volatile memory
US9336129B2 (en) 2013-10-02 2016-05-10 Sandisk Technologies Inc. System and method for bank logical data remapping
KR102291507B1 (ko) * 2014-05-20 2021-08-20 삼성전자주식회사 메모리 컨트롤러의 동작 방법
CN105489246B (zh) * 2014-09-16 2018-10-19 华邦电子股份有限公司 Nor闪存及其修补方法
US9728278B2 (en) 2014-10-24 2017-08-08 Micron Technology, Inc. Threshold voltage margin analysis
US9934872B2 (en) * 2014-10-30 2018-04-03 Sandisk Technologies Llc Erase stress and delta erase loop count methods for various fail modes in non-volatile memory
US9830087B2 (en) * 2014-11-13 2017-11-28 Micron Technology, Inc. Memory wear leveling
US10338817B2 (en) 2014-12-30 2019-07-02 Sandisk Technologies Llc Systems and methods for storage recovery
US9766819B2 (en) 2014-12-30 2017-09-19 Sandisk Technologies Llc Systems and methods for managing storage endurance
US9934858B2 (en) 2015-04-30 2018-04-03 Sandisk Technologies Llc Use of dummy word lines for metadata storage
US10101939B2 (en) 2016-03-09 2018-10-16 Toshiba Memory Corporation Storage system having a host that manages physical data locations of a storage device
CN107589914A (zh) * 2017-09-25 2018-01-16 青岛海信移动通信技术股份有限公司 数据存储方法及装置
US10552145B2 (en) * 2017-12-12 2020-02-04 Cypress Semiconductor Corporation Memory devices, systems, and methods for updating firmware with single memory device
US10261692B1 (en) * 2017-12-20 2019-04-16 Winbond Electronics Corp. Non-volatile memory and erase controlling method thereof
US10884889B2 (en) 2018-06-22 2021-01-05 Seagate Technology Llc Allocating part of a raid stripe to repair a second raid stripe
US10866747B2 (en) 2019-02-10 2020-12-15 Hewlett Packard Enterprise Development Lp Securing a memory drive
KR20200114482A (ko) * 2019-03-28 2020-10-07 에스케이하이닉스 주식회사 컨트롤러, 이를 포함하는 메모리 시스템 및 메모리 시스템의 동작 방법
US11366597B2 (en) 2020-01-27 2022-06-21 Western Digital Technologies, Inc. Storage system and method for maintaining uniform hot count distribution using smart stream block exchange
US11640259B2 (en) 2020-05-21 2023-05-02 Western Digital Technologies, Inc. Use of surplus erase block pairs in super block formation
US11494299B2 (en) 2021-02-18 2022-11-08 Silicon Motion, Inc. Garbage collection operation management with early garbage collection starting point
US20220300184A1 (en) * 2021-03-19 2022-09-22 Silicon Motion, Inc. Method of performing wear-leveling operation in flash memory and related controller and storage system
KR20230059910A (ko) * 2021-10-26 2023-05-04 삼성전자주식회사 컨트롤러, 스토리지 장치 및 스토리지 장치의 동작 방법

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2685173B2 (ja) 1986-05-31 1997-12-03 キヤノン株式会社 メモリ書き込み制御方法
JPH07109717B2 (ja) 1986-05-31 1995-11-22 キヤノン株式会社 メモリ書き込み制御方法
US5268870A (en) 1988-06-08 1993-12-07 Eliyahou Harari Flash EEPROM system and intelligent programming and erasing methods therefor
EP0617363B1 (de) 1989-04-13 2000-01-26 SanDisk Corporation Austausch von fehlerhaften Speicherzellen einer EEprommatritze
US5222109A (en) 1990-12-28 1993-06-22 Ibm Corporation Endurance management for solid state files
US5438573A (en) 1991-09-13 1995-08-01 Sundisk Corporation Flash EEPROM array data and header file structure
US6230233B1 (en) 1991-09-13 2001-05-08 Sandisk Corporation Wear leveling techniques for flash EEPROM systems
JPH0750558B2 (ja) * 1992-09-22 1995-05-31 インターナショナル・ビジネス・マシーンズ・コーポレイション 一括消去型不揮発性メモリ
JP2856621B2 (ja) 1993-02-24 1999-02-10 インターナショナル・ビジネス・マシーンズ・コーポレイション 一括消去型不揮発性メモリおよびそれを用いる半導体ディスク装置
US5388083A (en) 1993-03-26 1995-02-07 Cirrus Logic, Inc. Flash memory mass storage architecture
US5426893A (en) * 1994-05-26 1995-06-27 Hoffman; Robert E. Reinforced sectional storm panel
JP3507132B2 (ja) 1994-06-29 2004-03-15 株式会社日立製作所 フラッシュメモリを用いた記憶装置およびその記憶制御方法
JPH0877074A (ja) * 1994-09-09 1996-03-22 Hitachi Ltd フラッシュメモリを用いた記憶装置システム
US5954828A (en) 1995-01-05 1999-09-21 Macronix International Co., Ltd. Non-volatile memory device for fault tolerant data
US5568423A (en) * 1995-04-14 1996-10-22 Unisys Corporation Flash memory wear leveling system providing immediate direct access to microprocessor
US5907856A (en) 1995-07-31 1999-05-25 Lexar Media, Inc. Moving sectors within a block of information in a flash memory mass storage architecture
US5845313A (en) 1995-07-31 1998-12-01 Lexar Direct logical block addressing flash memory mass storage architecture
US5835935A (en) 1995-09-13 1998-11-10 Lexar Media, Inc. Method of and architecture for controlling system data with automatic wear leveling in a semiconductor non-volatile mass storage memory
US6125435A (en) 1995-09-13 2000-09-26 Lexar Media, Inc. Alignment of cluster address to block addresses within a semiconductor non-volatile mass storage memory
US5933847A (en) 1995-09-28 1999-08-03 Canon Kabushiki Kaisha Selecting erase method based on type of power supply for flash EEPROM
US5860082A (en) 1996-03-28 1999-01-12 Datalight, Inc. Method and apparatus for allocating storage in a flash memory
US5715193A (en) 1996-05-23 1998-02-03 Micron Quantum Devices, Inc. Flash memory system and method for monitoring the disturb effect on memory cell blocks due to high voltage conditions of other memory cell blocks
US5956473A (en) 1996-11-25 1999-09-21 Macronix International Co., Ltd. Method and system for managing a flash memory mass storage system
US6009496A (en) * 1997-10-30 1999-12-28 Winbond Electronics Corp. Microcontroller with programmable embedded flash memory
KR100297986B1 (ko) 1998-03-13 2001-10-25 김영환 플래쉬 메모리 셀 어레이의 웨어 레벨링 시스템 및 웨어 레벨링 방법
EP1027653B1 (de) 1998-09-04 2004-09-15 Hyperstone AG Zugriffssteuerung eines speichers beschränkter löschhäufigkeit
US6226759B1 (en) 1998-09-28 2001-05-01 International Business Machines Corporation Method and apparatus for immediate data backup by duplicating pointers and freezing pointer/data counterparts
US6260156B1 (en) 1998-12-04 2001-07-10 Datalight, Inc. Method and system for managing bad areas in flash memory
JP3583639B2 (ja) * 1999-02-02 2004-11-04 三菱電機株式会社 メモリ装置のデータ更新方法
US6282605B1 (en) 1999-04-26 2001-08-28 Moore Computer Consultants, Inc. File system for non-volatile computer memory
US6426893B1 (en) 2000-02-17 2002-07-30 Sandisk Corporation Flash eeprom system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocks
WO2001084321A1 (en) * 2000-05-04 2001-11-08 Koninklijke Philips Electronics N.V. Method, system and computer program for data management on storage medium
KR100644602B1 (ko) 2000-10-11 2006-11-10 삼성전자주식회사 플래시메모리를 위한 재사상 제어방법 및 그에 따른플래시 메모리의 구조
JP2002251884A (ja) * 2001-02-21 2002-09-06 Toshiba Corp 半導体記憶装置及びそのシステム装置
US6732221B2 (en) 2001-06-01 2004-05-04 M-Systems Flash Disk Pioneers Ltd Wear leveling of static areas in flash memory
US6683817B2 (en) 2002-02-21 2004-01-27 Qualcomm, Incorporated Direct memory swapping between NAND flash and SRAM with error correction coding

Also Published As

Publication number Publication date
CN1701389A (zh) 2005-11-23
ATE378684T1 (de) 2007-11-15
AU2003270449A1 (en) 2004-05-25
TWI247292B (en) 2006-01-11
JP4758648B2 (ja) 2011-08-31
US7035967B2 (en) 2006-04-25
KR20050067203A (ko) 2005-06-30
TW200416707A (en) 2004-09-01
DE60317551T2 (de) 2008-09-18
US20060149896A1 (en) 2006-07-06
US7287118B2 (en) 2007-10-23
JP2006504220A (ja) 2006-02-02
EP1559112B1 (de) 2007-11-14
WO2004040584A1 (en) 2004-05-13
EP1559112A1 (de) 2005-08-03
US20040177212A1 (en) 2004-09-09

Similar Documents

Publication Publication Date Title
DE60317551D1 (de) Aufrechterhaltung gleichförmiger löschhäufigkeit in einem nichtflüchtigen speichersystem
DE60319407D1 (de) Verfolgen der am häufigsten gelöschten blöcke eines nichtflüchtigen speichersystems
ATE555441T1 (de) Verfahren und gerät zum verwalten der anzahl der löschungen von blöcken
AU2003270527A1 (en) Maintaining erase counts in non-volatile storage systems
WO2004040578A3 (en) Wear leveling in non-volatile storage systems
ATE466337T1 (de) Verfahren und vorrichtung zur seitengruppierung in einem block
ATE518402T1 (de) Verfahren und vorrichtung zur bestimmung, übermittlung und/oder verwendung von verzögerungsinformationen in einem drahtlosen kommunikationssystem
DE60316171D1 (de) Automatischer abnutzungsausgleich in einem nicht-flüchtigen speichersystem
DK1581928T3 (da) Reduktion af skalafaktor transmissionsomkostninger for en MPEG-2 AAC under anvendelse af et gitter
ATE553569T1 (de) Netzwerkeinrichtungsverwaltungs verfahren; netzwerkeinrichtungsverwaltungsprogramm und netzwerksteuervorrichtung
DE60204785D1 (de) Verfahren zur reduzierung der raumladung in einem linearen quadrupol-ionenfalle-massenspektrometer
FI20045051A0 (fi) Audiosignaalien luokittelu
TW200632781A (en) Method and apparatus for distinguishing foliage from buildings for topographical modeling
DE602004026062D1 (de) Nd computerprogramm zum spezifizieren von knoten in einem einrichtungs-verwaltungssystem
GB2408657B (en) Radio resource management
ATE341913T1 (de) Vorrichtung und verfahren zur zuordnung von ressourcen in einem kommunikationssystem
DE50308109D1 (de) Klimaschrank sowie Vorrichtung und Verfahren zu seiner Überwachung
TW200715285A (en) An erase method to reduce erase time and to prevent over-erase
DE502006000385D1 (de) VERFAHREN ZUR ERMITTLUNG VON ABBIEGERATEN IN EINEM STRAßENNETZ
DE50307026D1 (de) Verfahren zur herstellung eines nrom-speicherzellenfeldes
ATE543429T1 (de) Verfahren zur bestimmung des sympathikus-tonus und messsystem dafür
DE602004015795D1 (de) Verfahren und vorrichtung zur steuerkanaleinteilung in einem paketdatenkommunikationssystem
CN114626680A (zh) 钢筋混凝土桥梁安全评估方法及装置
Lilić et al. Environmental noise management in the area of opencast mines
Engin et al. Determination of risky areas at the marble workshops in terms of noise

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee