DE60320373D1 - Herstellungsverfahren für nichtflüchtige widerstandsveränderbare bauelemente und herstellungsverfahr - Google Patents

Herstellungsverfahren für nichtflüchtige widerstandsveränderbare bauelemente und herstellungsverfahr

Info

Publication number
DE60320373D1
DE60320373D1 DE60320373T DE60320373T DE60320373D1 DE 60320373 D1 DE60320373 D1 DE 60320373D1 DE 60320373 T DE60320373 T DE 60320373T DE 60320373 T DE60320373 T DE 60320373T DE 60320373 D1 DE60320373 D1 DE 60320373D1
Authority
DE
Germany
Prior art keywords
silver
elemental
substrate
selenide
patterned mass
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60320373T
Other languages
English (en)
Other versions
DE60320373T2 (de
Inventor
Terry L Gilton
Kristy A Campbell
John T Moore
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micron Technology Inc
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Application granted granted Critical
Publication of DE60320373D1 publication Critical patent/DE60320373D1/de
Publication of DE60320373T2 publication Critical patent/DE60320373T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/041—Modification of the switching material, e.g. post-treatment, doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Patterning of the switching material
    • H10N70/063—Patterning of the switching material by etching of pre-deposited switching material layers, e.g. lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Patterning of the switching material
    • H10N70/066—Patterning of the switching material by filling of openings, e.g. damascene method
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
    • H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8825—Selenides, e.g. GeSe
DE60320373T 2002-01-31 2003-01-21 Herstellungsverfahren für nichtflüchtige widerstandsveränderbare bauelemente und herstellungsverfahren für silber-selenide beinhaltende strukturen Expired - Lifetime DE60320373T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US61825 1998-04-16
US10/061,825 US20030143782A1 (en) 2002-01-31 2002-01-31 Methods of forming germanium selenide comprising devices and methods of forming silver selenide comprising structures
PCT/US2003/001498 WO2003065456A2 (en) 2002-01-31 2003-01-21 Methods of forming non-volatile resistance variable devices and methods of forming silver selenide comprising structures

Publications (2)

Publication Number Publication Date
DE60320373D1 true DE60320373D1 (de) 2008-05-29
DE60320373T2 DE60320373T2 (de) 2009-02-19

Family

ID=27610193

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60320373T Expired - Lifetime DE60320373T2 (de) 2002-01-31 2003-01-21 Herstellungsverfahren für nichtflüchtige widerstandsveränderbare bauelemente und herstellungsverfahren für silber-selenide beinhaltende strukturen

Country Status (10)

Country Link
US (2) US20030143782A1 (de)
EP (1) EP1470589B1 (de)
JP (1) JP2005516418A (de)
KR (1) KR100660245B1 (de)
CN (1) CN100375284C (de)
AT (1) ATE392714T1 (de)
AU (1) AU2003212814A1 (de)
DE (1) DE60320373T2 (de)
TW (1) TWI251263B (de)
WO (1) WO2003065456A2 (de)

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US20040029351A1 (en) 2004-02-12
US6812087B2 (en) 2004-11-02
WO2003065456A3 (en) 2003-12-04
EP1470589A2 (de) 2004-10-27
US20030143782A1 (en) 2003-07-31
EP1470589B1 (de) 2008-04-16
CN1647278A (zh) 2005-07-27
KR100660245B1 (ko) 2006-12-20
KR20040083432A (ko) 2004-10-01
WO2003065456A2 (en) 2003-08-07
CN100375284C (zh) 2008-03-12
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AU2003212814A1 (en) 2003-09-02
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