DE60324069D1 - Lithographischer Projektionsapparat und Reflektoranordnung für die Verwendung in diesem Apparat - Google Patents
Lithographischer Projektionsapparat und Reflektoranordnung für die Verwendung in diesem ApparatInfo
- Publication number
- DE60324069D1 DE60324069D1 DE60324069T DE60324069T DE60324069D1 DE 60324069 D1 DE60324069 D1 DE 60324069D1 DE 60324069 T DE60324069 T DE 60324069T DE 60324069 T DE60324069 T DE 60324069T DE 60324069 D1 DE60324069 D1 DE 60324069D1
- Authority
- DE
- Germany
- Prior art keywords
- lithographic projection
- reflector assembly
- projection apparatus
- reflector
- assembly
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B17/00—Systems with reflecting surfaces, with or without refracting elements
- G02B17/004—Systems comprising a plurality of reflections between two or more surfaces, e.g. cells, resonators
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B17/00—Systems with reflecting surfaces, with or without refracting elements
- G02B17/006—Systems in which light light is reflected on a plurality of parallel surfaces, e.g. louvre mirrors, total internal reflection [TIR] lenses
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/0025—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for optical correction, e.g. distorsion, aberration
- G02B27/0037—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for optical correction, e.g. distorsion, aberration with diffracting elements
- G02B27/0043—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for optical correction, e.g. distorsion, aberration with diffracting elements in projection exposure systems, e.g. microlithographic systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/7015—Details of optical elements
- G03F7/70166—Capillary or channel elements, e.g. nested extreme ultraviolet [EUV] mirrors or shells, optical fibers or light guides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/7015—Details of optical elements
- G03F7/70175—Lamphouse reflector arrangements or collector mirrors, i.e. collecting light from solid angle upstream of the light source
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
- G03F7/70891—Temperature
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP02078390 | 2002-08-15 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60324069D1 true DE60324069D1 (de) | 2008-11-27 |
Family
ID=32405730
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60324069T Expired - Lifetime DE60324069D1 (de) | 2002-08-15 | 2003-08-15 | Lithographischer Projektionsapparat und Reflektoranordnung für die Verwendung in diesem Apparat |
Country Status (7)
Country | Link |
---|---|
US (3) | US6859259B2 (de) |
JP (1) | JP4105616B2 (de) |
KR (1) | KR100589236B1 (de) |
CN (1) | CN1495528B (de) |
DE (1) | DE60324069D1 (de) |
SG (1) | SG109523A1 (de) |
TW (1) | TWI242690B (de) |
Families Citing this family (64)
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US7856044B2 (en) | 1999-05-10 | 2010-12-21 | Cymer, Inc. | Extendable electrode for gas discharge laser |
JP4115913B2 (ja) * | 2002-08-23 | 2008-07-09 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ投影装置及び前記装置で使用する微粒子バリヤ |
US6963071B2 (en) * | 2002-11-25 | 2005-11-08 | Intel Corporation | Debris mitigation device |
DE10308174B4 (de) * | 2003-02-24 | 2010-01-14 | Xtreme Technologies Gmbh | Anordnung zur Debrisreduktion bei einer Strahlungsquelle auf Basis eines Plasmas |
US7034320B2 (en) * | 2003-03-20 | 2006-04-25 | Intel Corporation | Dual hemispherical collectors |
US7217941B2 (en) * | 2003-04-08 | 2007-05-15 | Cymer, Inc. | Systems and methods for deflecting plasma-generated ions to prevent the ions from reaching an internal component of an EUV light source |
SG118268A1 (en) * | 2003-06-27 | 2006-01-27 | Asml Netherlands Bv | Laser produced plasma radiation system with foil trap |
US7145640B2 (en) * | 2004-03-22 | 2006-12-05 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and variable attenuator |
EP1743221B1 (de) * | 2004-03-31 | 2016-01-06 | Philips Intellectual Property & Standards GmbH | Beseitigung von durch eine strahlungsquelle erzeugten teilchen |
FR2871622B1 (fr) * | 2004-06-14 | 2008-09-12 | Commissariat Energie Atomique | Dispositif de generation de lumiere dans l'extreme ultraviolet et application a une source de lithographie par rayonnement dans l'extreme ultraviolet |
CN100573334C (zh) * | 2004-07-22 | 2009-12-23 | 皇家飞利浦电子股份有限公司 | 具有清洁装置的光学系统 |
US7405804B2 (en) * | 2004-10-06 | 2008-07-29 | Asml Netherlands B.V. | Lithographic apparatus with enhanced spectral purity, device manufacturing method and device manufactured thereby |
US7688948B2 (en) * | 2004-11-29 | 2010-03-30 | Koninklijke Philips Electronics N.V. | Method and apparatus for generating radiation in the wavelength range from about 1 nm to about 30 nm, and use in a lithography device or in metrology |
SG123770A1 (en) * | 2004-12-28 | 2006-07-26 | Asml Netherlands Bv | Lithographic apparatus, radiation system and filt er system |
WO2006136967A2 (en) * | 2005-06-21 | 2006-12-28 | Philips Intellectual Property & Standards Gmbh | Method of cleaning optical surfaces of an irradiation unit in a two-step process |
US7462841B2 (en) * | 2005-10-19 | 2008-12-09 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method, and use of a radiation collector |
US7470916B2 (en) * | 2005-10-19 | 2008-12-30 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and radiation collector |
DE102005053415A1 (de) * | 2005-11-04 | 2007-05-10 | Carl Zeiss Laser Optics Gmbh | Optisches Bauelement mit verbessertem thermischen Verhalten |
KR101370203B1 (ko) * | 2005-11-10 | 2014-03-05 | 칼 짜이스 에스엠테 게엠베하 | 광원의 요동을 측정하기 위한 시스템을 구비한 euv 조명시스템 |
US7372049B2 (en) * | 2005-12-02 | 2008-05-13 | Asml Netherlands B.V. | Lithographic apparatus including a cleaning device and method for cleaning an optical element |
US7465943B2 (en) * | 2005-12-08 | 2008-12-16 | Asml Netherlands B.V. | Controlling the flow through the collector during cleaning |
JP4378357B2 (ja) | 2006-03-14 | 2009-12-02 | キヤノン株式会社 | 露光装置及びその圧力制御方法並びにデバイス製造方法 |
JP5076349B2 (ja) * | 2006-04-18 | 2012-11-21 | ウシオ電機株式会社 | 極端紫外光集光鏡および極端紫外光光源装置 |
US7817246B2 (en) * | 2006-06-21 | 2010-10-19 | Asml Netherlands B.V. | Optical apparatus |
US7714306B2 (en) * | 2006-08-30 | 2010-05-11 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
ATE528693T1 (de) * | 2006-09-15 | 2011-10-15 | Media Lario Srl | Optisches kollektorsystem |
US7696492B2 (en) * | 2006-12-13 | 2010-04-13 | Asml Netherlands B.V. | Radiation system and lithographic apparatus |
US20090323739A1 (en) * | 2006-12-22 | 2009-12-31 | Uv Tech Systems | Laser optical system |
KR20080074535A (ko) * | 2007-02-09 | 2008-08-13 | 삼성전자주식회사 | 백라이트 장치용 콜리메이터 및 이를 적용한 lcd |
US8901521B2 (en) | 2007-08-23 | 2014-12-02 | Asml Netherlands B.V. | Module and method for producing extreme ultraviolet radiation |
US7812329B2 (en) | 2007-12-14 | 2010-10-12 | Cymer, Inc. | System managing gas flow between chambers of an extreme ultraviolet (EUV) photolithography apparatus |
US7655925B2 (en) | 2007-08-31 | 2010-02-02 | Cymer, Inc. | Gas management system for a laser-produced-plasma EUV light source |
EP2083327B1 (de) * | 2008-01-28 | 2017-11-29 | Media Lario s.r.l. | Optische Systeme mit verbessertem Kollektor mit streifendem Einfall für EUV- und Röntgenstrahlungsanwendungen |
EP2083328B1 (de) * | 2008-01-28 | 2013-06-19 | Media Lario s.r.l. | Kollektor für streifenden Strahlungseinfall geeignet für lasererzeugte Plasmaquellen |
NL1036469A1 (nl) * | 2008-02-27 | 2009-08-31 | Asml Netherlands Bv | Optical element, lithographic apparatus including such an optical element, device manufacturing method, and device manufactured thereby. |
NL2003181A1 (nl) * | 2008-07-14 | 2010-01-18 | Asml Netherlands Bv | A source module of an EUV lithographic apparatus, a lithographic apparatus, and a method for manufacturing a device. |
US8519366B2 (en) | 2008-08-06 | 2013-08-27 | Cymer, Inc. | Debris protection system having a magnetic field for an EUV light source |
EP2157481A3 (de) * | 2008-08-14 | 2012-06-13 | ASML Netherlands B.V. | Strahlungsquelle, Lithographieapparat und Verfahren zur Herstellung von Bauelementen |
JP5732392B2 (ja) * | 2008-08-14 | 2015-06-10 | エーエスエムエル ネザーランズ ビー.ブイ. | 放射源およびリソグラフィ装置 |
WO2010028899A1 (en) * | 2008-09-11 | 2010-03-18 | Asml Netherlands B.V. | Radiation source and lithographic apparatus |
WO2010051469A1 (en) * | 2008-10-30 | 2010-05-06 | Kenneth Oosting | X-ray beam processor |
FR2938116B1 (fr) * | 2008-11-04 | 2011-03-11 | Aplinov | Procede et dispositif de chauffage d'une couche d'une plaque par amorcage et flux lumineux. |
US8232537B2 (en) | 2008-12-18 | 2012-07-31 | Asml Netherlands, B.V. | Radiation source, lithographic apparatus and device manufacturing method |
DE102010002298A1 (de) * | 2009-02-27 | 2010-09-02 | Carl Zeiss Smt Ag | Projektionsbelichtungsanlage für die Halbleiterlithographie mit einer Kühlvorrichtung |
US8138487B2 (en) * | 2009-04-09 | 2012-03-20 | Cymer, Inc. | System, method and apparatus for droplet catcher for prevention of backsplash in a EUV generation chamber |
NL2004816A (en) * | 2009-07-07 | 2011-01-10 | Asml Netherlands Bv | Euv radiation generation apparatus. |
JP5355261B2 (ja) * | 2009-07-07 | 2013-11-27 | 株式会社日立ハイテクノロジーズ | プロキシミティ露光装置、プロキシミティ露光装置の露光光形成方法、及び表示用パネル基板の製造方法 |
US8153994B2 (en) * | 2009-12-02 | 2012-04-10 | Media Lario S.R.L. | Cooling systems and methods for grazing incidence EUV lightography collectors |
JP5732257B2 (ja) * | 2010-01-15 | 2015-06-10 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置、デバイス製造方法およびコンピュータ読取可能媒体 |
US8264665B2 (en) * | 2010-01-25 | 2012-09-11 | Media Lario, S.R.L. | Cooled spider and method for grazing-incidence collectors |
JP5687488B2 (ja) | 2010-02-22 | 2015-03-18 | ギガフォトン株式会社 | 極端紫外光生成装置 |
US8643823B2 (en) * | 2010-02-23 | 2014-02-04 | Media Lario S.R.L. | Stress-decoupling devices and methods for cooled mirror systems |
JP5093267B2 (ja) * | 2010-03-11 | 2012-12-12 | ウシオ電機株式会社 | 集光鏡アッセンブリおよびこの集光鏡アッセンブリを用いた極端紫外光光源装置 |
DE102010039965B4 (de) * | 2010-08-31 | 2019-04-25 | Carl Zeiss Smt Gmbh | EUV-Kollektor |
US8746975B2 (en) | 2011-02-17 | 2014-06-10 | Media Lario S.R.L. | Thermal management systems, assemblies and methods for grazing incidence collectors for EUV lithography |
US8731139B2 (en) | 2011-05-04 | 2014-05-20 | Media Lario S.R.L. | Evaporative thermal management of grazing incidence collectors for EUV lithography |
CN102510003B (zh) * | 2011-12-21 | 2013-05-22 | 上海激光等离子体研究所 | 反射镜双程放大软x射线激光出光靶装置及调节方法 |
US8858036B2 (en) * | 2012-01-31 | 2014-10-14 | RAB Lighting Inc. | Compact concentric array reflector for LED light fixture |
US9989758B2 (en) * | 2013-04-10 | 2018-06-05 | Kla-Tencor Corporation | Debris protection system for reflective optic utilizing gas flow |
JP6116407B2 (ja) * | 2013-07-04 | 2017-04-19 | エヌ・ティ・ティ・アドバンステクノロジ株式会社 | X線集光装置およびx線装置 |
JP6435338B2 (ja) | 2013-10-16 | 2018-12-05 | エーエスエムエル ネザーランズ ビー.ブイ. | 放射源、リソグラフィ装置、デバイス製造方法、センサシステム及びセンシング方法 |
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CN104619104B (zh) * | 2015-02-16 | 2017-03-01 | 哈尔滨工业大学 | Xe介质毛细管放电检测用极紫外光源系统 |
JP7269889B2 (ja) * | 2017-06-23 | 2023-05-09 | エーエスエムエル ネザーランズ ビー.ブイ. | 放射源モジュール及びリソグラフィ装置 |
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-
2003
- 2003-08-13 CN CN03132763XA patent/CN1495528B/zh not_active Expired - Fee Related
- 2003-08-13 JP JP2003325248A patent/JP4105616B2/ja not_active Expired - Fee Related
- 2003-08-13 KR KR1020030056179A patent/KR100589236B1/ko active IP Right Grant
- 2003-08-13 TW TW092122268A patent/TWI242690B/zh not_active IP Right Cessation
- 2003-08-13 US US10/639,753 patent/US6859259B2/en not_active Expired - Lifetime
- 2003-08-13 SG SG200304826A patent/SG109523A1/en unknown
- 2003-08-15 DE DE60324069T patent/DE60324069D1/de not_active Expired - Lifetime
-
2005
- 2005-01-13 US US11/034,260 patent/US7088424B2/en not_active Expired - Lifetime
-
2006
- 2006-07-07 US US11/482,147 patent/US7852460B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
TW200424782A (en) | 2004-11-16 |
US6859259B2 (en) | 2005-02-22 |
US20040109151A1 (en) | 2004-06-10 |
KR100589236B1 (ko) | 2006-06-14 |
JP4105616B2 (ja) | 2008-06-25 |
TWI242690B (en) | 2005-11-01 |
SG109523A1 (en) | 2005-03-30 |
US7852460B2 (en) | 2010-12-14 |
US20060250599A1 (en) | 2006-11-09 |
CN1495528A (zh) | 2004-05-12 |
JP2004165638A (ja) | 2004-06-10 |
US7088424B2 (en) | 2006-08-08 |
CN1495528B (zh) | 2011-10-12 |
US20050148210A1 (en) | 2005-07-07 |
KR20040030255A (ko) | 2004-04-09 |
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