DE60328567D1 - Wellenlängenabstimmbarer VCSEL - Google Patents

Wellenlängenabstimmbarer VCSEL

Info

Publication number
DE60328567D1
DE60328567D1 DE60328567T DE60328567T DE60328567D1 DE 60328567 D1 DE60328567 D1 DE 60328567D1 DE 60328567 T DE60328567 T DE 60328567T DE 60328567 T DE60328567 T DE 60328567T DE 60328567 D1 DE60328567 D1 DE 60328567D1
Authority
DE
Germany
Prior art keywords
wavelength tunable
tunable vcsel
vcsel
wavelength
tunable
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60328567T
Other languages
English (en)
Inventor
Taek Kim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Application granted granted Critical
Publication of DE60328567D1 publication Critical patent/DE60328567D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18322—Position of the structure
    • H01S5/18325—Between active layer and substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
    • H01S5/0614—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by electric field, i.e. whereby an additional electric field is used to tune the bandgap, e.g. using the Stark-effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
DE60328567T 2002-08-07 2003-06-20 Wellenlängenabstimmbarer VCSEL Expired - Lifetime DE60328567D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020020046564A KR20040013569A (ko) 2002-08-07 2002-08-07 파장 가변형 면방출 반도체 레이저

Publications (1)

Publication Number Publication Date
DE60328567D1 true DE60328567D1 (de) 2009-09-10

Family

ID=30768211

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60328567T Expired - Lifetime DE60328567D1 (de) 2002-08-07 2003-06-20 Wellenlängenabstimmbarer VCSEL

Country Status (6)

Country Link
US (1) US6865214B2 (de)
EP (1) EP1389813B1 (de)
JP (1) JP2004072118A (de)
KR (1) KR20040013569A (de)
CN (1) CN1279668C (de)
DE (1) DE60328567D1 (de)

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US7593436B2 (en) * 2006-06-16 2009-09-22 Vi Systems Gmbh Electrooptically Bragg-reflector stopband-tunable optoelectronic device for high-speed data transfer
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CN101867155B (zh) * 2009-04-15 2012-07-04 中国科学院半导体研究所 用于半导体光放大器的宽增益谱量子点材料结构
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JP6056154B2 (ja) * 2011-07-21 2017-01-11 富士ゼロックス株式会社 発光素子、発光素子アレイ、光書込みヘッドおよび画像形成装置
EP2774229B1 (de) * 2011-11-01 2019-10-16 Hewlett-Packard Enterprise Development LP Direkt modulierter laser
CN103208741B (zh) * 2013-03-28 2015-09-23 武汉电信器件有限公司 一种半导体面发射激光器及其制备方法和应用
KR20160018869A (ko) * 2013-07-03 2016-02-17 인피닉스, 인크. Ｓｓ－ｏｃｔ 시스템에 대한 파장－튜닝가능 수직 캐비티 표면 방출 레이저
JP2015079831A (ja) * 2013-10-16 2015-04-23 セイコーエプソン株式会社 発光装置および原子発振器
WO2016018288A1 (en) 2014-07-30 2016-02-04 Hewlett-Packard Development Company, L.P. Hybrid multilayer device
DE102015107239A1 (de) * 2015-05-08 2016-11-10 Rheinisch-Westfälische Technische Hochschule (Rwth) Aachen Steuerbarer Bragg-Reflektor
CN111564754A (zh) * 2015-06-09 2020-08-21 通快光电器件有限公司 垂直腔面发射激光器
US10658177B2 (en) 2015-09-03 2020-05-19 Hewlett Packard Enterprise Development Lp Defect-free heterogeneous substrates
US10586847B2 (en) 2016-01-15 2020-03-10 Hewlett Packard Enterprise Development Lp Multilayer device
CN105552715B (zh) * 2016-01-29 2018-07-27 中国科学院长春光学精密机械与物理研究所 适合高温工作的高增益垂直腔面发射半导体激光器
WO2017171737A1 (en) 2016-03-30 2017-10-05 Hewlett Packard Enterprise Development Lp Devices having substrates with selective airgap regions
US10193634B2 (en) 2016-09-19 2019-01-29 Hewlett Packard Enterprise Development Lp Optical driver circuits
KR102384230B1 (ko) 2017-10-12 2022-04-07 삼성전자주식회사 가변 레이저 소자
EP3514898A1 (de) * 2018-01-19 2019-07-24 Koninklijke Philips N.V. Vertikalresonator-oberflächenemissionslaservorrichtung mit integrierter fotodiode
US10381801B1 (en) 2018-04-26 2019-08-13 Hewlett Packard Enterprise Development Lp Device including structure over airgap
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Also Published As

Publication number Publication date
US6865214B2 (en) 2005-03-08
JP2004072118A (ja) 2004-03-04
EP1389813B1 (de) 2009-07-29
CN1476132A (zh) 2004-02-18
CN1279668C (zh) 2006-10-11
EP1389813A1 (de) 2004-02-18
US20040028092A1 (en) 2004-02-12
KR20040013569A (ko) 2004-02-14

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Legal Events

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