DE60329638D1 - Sputtertarget, Sinterkörper, unter deren Verwendung gebildeter leitfähiger Film, organische EL-Vorrichtung und für diesen verwendetes Substrat - Google Patents

Sputtertarget, Sinterkörper, unter deren Verwendung gebildeter leitfähiger Film, organische EL-Vorrichtung und für diesen verwendetes Substrat

Info

Publication number
DE60329638D1
DE60329638D1 DE60329638T DE60329638T DE60329638D1 DE 60329638 D1 DE60329638 D1 DE 60329638D1 DE 60329638 T DE60329638 T DE 60329638T DE 60329638 T DE60329638 T DE 60329638T DE 60329638 D1 DE60329638 D1 DE 60329638D1
Authority
DE
Germany
Prior art keywords
organic
conductive film
film formed
sintered body
sputtering target
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60329638T
Other languages
English (en)
Inventor
Kazuyoshi Inoue
Hisayuki Kawamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Idemitsu Kosan Co Ltd
Original Assignee
Idemitsu Kosan Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2002226429A external-priority patent/JP4448648B2/ja
Priority claimed from JP2002283405A external-priority patent/JP2004119272A/ja
Priority claimed from JP2002301633A external-priority patent/JP4308497B2/ja
Priority claimed from JP2002307906A external-priority patent/JP4428502B2/ja
Priority claimed from JP2002323388A external-priority patent/JP4241003B2/ja
Application filed by Idemitsu Kosan Co Ltd filed Critical Idemitsu Kosan Co Ltd
Application granted granted Critical
Publication of DE60329638D1 publication Critical patent/DE60329638D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/453Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/50Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on rare-earth compounds
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/06Luminescent, e.g. electroluminescent, chemiluminescent materials containing organic luminescent materials
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08Oxides
    • C23C14/086Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/10Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/805Electrodes
    • H10K50/81Anodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/805Electrodes
    • H10K50/81Anodes
    • H10K50/816Multilayers, e.g. transparent multilayers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/805Electrodes
    • H10K50/82Cathodes
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3224Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3224Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
    • C04B2235/3229Cerium oxides or oxide-forming salts thereof
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3231Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
    • C04B2235/3244Zirconium oxides, zirconates, hafnium oxides, hafnates, or oxide-forming salts thereof
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3231Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
    • C04B2235/3251Niobium oxides, niobates, tantalum oxides, tantalates, or oxide-forming salts thereof
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3284Zinc oxides, zincates, cadmium oxides, cadmiates, mercury oxides, mercurates or oxide forming salts thereof
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3286Gallium oxides, gallates, indium oxides, indates, thallium oxides, thallates or oxide forming salts thereof, e.g. zinc gallate
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3287Germanium oxides, germanates or oxide forming salts thereof, e.g. copper germanate
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3293Tin oxides, stannates or oxide forming salts thereof, e.g. indium tin oxide [ITO]
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3294Antimony oxides, antimonates, antimonites or oxide forming salts thereof, indium antimonate
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3298Bismuth oxides, bismuthates or oxide forming salts thereof, e.g. zinc bismuthate
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/74Physical characteristics
    • C04B2235/77Density
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/96Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/96Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
    • C04B2235/9646Optical properties
    • C04B2235/9653Translucent or transparent ceramics other than alumina
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14Carrier transporting layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17Carrier injection layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17Carrier injection layers
    • H10K50/171Electron injection layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60Forming conductive regions or layers, e.g. electrodes
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/12All metal or with adjacent metals
    • Y10T428/12493Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12535Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
    • Y10T428/12611Oxide-containing component
    • Y10T428/12618Plural oxides
DE60329638T 2002-08-02 2003-05-26 Sputtertarget, Sinterkörper, unter deren Verwendung gebildeter leitfähiger Film, organische EL-Vorrichtung und für diesen verwendetes Substrat Expired - Lifetime DE60329638D1 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2002226429A JP4448648B2 (ja) 2002-08-02 2002-08-02 スパッタリングターゲット及び焼結体それらを利用して製造した導電膜。
JP2002283405A JP2004119272A (ja) 2002-09-27 2002-09-27 有機el素子及びそれに用いる基板
JP2002301633A JP4308497B2 (ja) 2002-10-16 2002-10-16 有機電界発光装置用電極基板および有機電界発光装置およびその装置の製造方法
JP2002307906A JP4428502B2 (ja) 2002-10-23 2002-10-23 有機電界発光素子用電極基板およびその製造方法並びに有機el発光装置
JP2002323388A JP4241003B2 (ja) 2002-11-07 2002-11-07 有機電界発光素子用電極基板および有機el発光装置

Publications (1)

Publication Number Publication Date
DE60329638D1 true DE60329638D1 (de) 2009-11-19

Family

ID=31499613

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60329638T Expired - Lifetime DE60329638D1 (de) 2002-08-02 2003-05-26 Sputtertarget, Sinterkörper, unter deren Verwendung gebildeter leitfähiger Film, organische EL-Vorrichtung und für diesen verwendetes Substrat

Country Status (8)

Country Link
US (3) US7393600B2 (de)
EP (2) EP1536034A4 (de)
KR (2) KR101002492B1 (de)
CN (4) CN101260509A (de)
DE (1) DE60329638D1 (de)
SG (1) SG169230A1 (de)
TW (3) TWI404810B (de)
WO (1) WO2004013372A1 (de)

Families Citing this family (109)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101260509A (zh) * 2002-08-02 2008-09-10 出光兴产株式会社 溅射靶、烧结体及利用它们制造的导电膜、有机el元件及其所用的衬底
JP2004079301A (ja) * 2002-08-14 2004-03-11 Fuji Photo Film Co Ltd 発光素子およびその製造方法
KR100753328B1 (ko) * 2003-03-04 2007-08-29 닛코킨조쿠 가부시키가이샤 스퍼터링 타겟트, 광 정보기록 매체용 박막 및 그 제조방법
US7612850B2 (en) 2004-03-05 2009-11-03 Kazuyoshi Inoue Semi-transmissive/semi-reflective electrode substrate, method for manufacturing same, and liquid crystal display using such semi-transmissive/semi-reflective electrode substrate
CN1918672B (zh) * 2004-03-09 2012-10-03 出光兴产株式会社 薄膜晶体管、薄膜晶体管基板、液晶显示装置、溅射靶、透明导电膜、透明电极及它们的制造方法
KR100620849B1 (ko) * 2004-03-23 2006-09-13 엘지전자 주식회사 유기 전계 발광 소자 및 그 제조방법
JP4428698B2 (ja) * 2004-03-31 2010-03-10 出光興産株式会社 酸化インジウム−酸化セリウム系スパッタリングターゲット及び透明導電膜及び透明導電膜の製造方法
US7183707B2 (en) * 2004-04-12 2007-02-27 Eastman Kodak Company OLED device with short reduction
CN100378871C (zh) * 2005-01-07 2008-04-02 中南大学 In2O3-SnO2纳米涂膜材料的制备方法
US7858451B2 (en) 2005-02-03 2010-12-28 Semiconductor Energy Laboratory Co., Ltd. Electronic device, semiconductor device and manufacturing method thereof
WO2006095733A1 (ja) * 2005-03-09 2006-09-14 Idemitsu Kosan Co., Ltd. 非晶質透明導電膜、ターゲット及び非晶質透明導電膜の製造方法
JP2006318697A (ja) * 2005-05-11 2006-11-24 Idemitsu Kosan Co Ltd 有機エレクトロルミネッセンス素子
EP1905864B1 (de) * 2005-07-15 2013-06-12 Idemitsu Kosan Company Limited In-sm-oxid-sputtertarget
JP4761868B2 (ja) * 2005-07-27 2011-08-31 出光興産株式会社 スパッタリングターゲット、その製造方法及び透明導電膜
WO2007026783A1 (ja) * 2005-09-01 2007-03-08 Idemitsu Kosan Co., Ltd. スパッタリングターゲット、透明導電膜及び透明電極
JP4846726B2 (ja) * 2005-09-20 2011-12-28 出光興産株式会社 スパッタリングターゲット、透明導電膜及び透明電極
JP4960244B2 (ja) * 2005-09-22 2012-06-27 出光興産株式会社 酸化物材料、及びスパッタリングターゲット
JP4805648B2 (ja) * 2005-10-19 2011-11-02 出光興産株式会社 半導体薄膜及びその製造方法
CN101313371A (zh) * 2005-11-21 2008-11-26 出光兴产株式会社 透明导电膜及使用其的基板、电子器件以及液晶显示装置
US20070134500A1 (en) * 2005-12-14 2007-06-14 Klaus Hartig Sputtering targets and methods for depositing film containing tin and niobium
JP5000131B2 (ja) * 2005-12-26 2012-08-15 出光興産株式会社 透明電極膜及び電子機器
JP5165388B2 (ja) * 2006-01-25 2013-03-21 出光興産株式会社 積層構造及びそれを用いた電気回路用電極
WO2007142330A1 (ja) * 2006-06-08 2007-12-13 Asahi Glass Company, Limited 透明導電膜およびその製造方法、ならびにその製造に使用されるスパッタリングターゲット
KR20090051170A (ko) * 2006-08-10 2009-05-21 이데미쓰 고산 가부시키가이샤 란타노이드 함유 산화물 타겟
US8339031B2 (en) 2006-09-07 2012-12-25 Saint-Gobain Glass France Substrate for an organic light-emitting device, use and process for manufacturing this substrate, and organic light-emitting device
JP2008108530A (ja) * 2006-10-25 2008-05-08 Hitachi Displays Ltd 有機el表示装置
CN101548582B (zh) 2006-11-17 2012-11-14 法国圣-戈班玻璃公司 用于有机发光装置的电极、其酸蚀刻以及包括它的有机发光装置
US20120107491A1 (en) * 2007-01-16 2012-05-03 Alliance For Sustainable Energy, Llc High Permittivity Transparent Films
FR2913146B1 (fr) * 2007-02-23 2009-05-01 Saint Gobain Electrode discontinue, dispositif electroluminescent organique l'incorporant, et leurs fabrications
JP5125162B2 (ja) 2007-03-16 2013-01-23 住友化学株式会社 透明導電膜用材料
KR100813854B1 (ko) * 2007-04-23 2008-03-17 삼성에스디아이 주식회사 유기 발광 소자 및 그 제조방법
KR100850780B1 (ko) * 2007-05-22 2008-08-06 삼성전기주식회사 질화물계 반도체 발광소자의 제조방법
CN101809186B (zh) * 2007-09-27 2012-05-30 三菱综合材料株式会社 ZnO蒸镀材料和其制造方法、和ZnO膜
FR2924274B1 (fr) 2007-11-22 2012-11-30 Saint Gobain Substrat porteur d'une electrode, dispositif electroluminescent organique l'incorporant, et sa fabrication
KR20090063946A (ko) * 2007-12-14 2009-06-18 삼성코닝정밀유리 주식회사 산화인듐주석 타겟 및 이를 이용한 투명 도전막의 제조방법
FR2925981B1 (fr) 2007-12-27 2010-02-19 Saint Gobain Substrat porteur d'une electrode, dispositif electroluminescent organique l'incorporant.
KR101349676B1 (ko) * 2008-02-26 2014-01-10 삼성코닝정밀소재 주식회사 산화인듐아연계 스퍼터링 타겟 및 그 제조 방법
KR101349675B1 (ko) * 2008-02-26 2014-01-10 삼성코닝정밀소재 주식회사 산화아연계 스퍼터링 타겟
US8216685B2 (en) * 2008-05-16 2012-07-10 E I Du Pont De Nemours And Company Buffer bilayers for electronic devices
CN102131953B (zh) * 2008-06-27 2014-07-09 出光兴产株式会社 由InGaO3(ZnO)结晶相形成的氧化物半导体用溅射靶材及其制造方法
CN102089256A (zh) * 2008-07-07 2011-06-08 Jx日矿日石金属株式会社 氧化物烧结体、包含该烧结体的溅射靶、该烧结体的制造方法及该烧结体溅射靶的制造方法
FR2936358B1 (fr) 2008-09-24 2011-01-21 Saint Gobain Procede de fabrication d'un masque a ouvertures submillimetriques pour grille electroconductrice submillimetrique, masque a ouverture submillimetriques, grille electroconductrice submillimetrique.
FR2936362B1 (fr) 2008-09-25 2010-09-10 Saint Gobain Procede de fabrication d'une grille submillimetrique electroconductrice revetue d'une grille surgrille, grille submillimetrique electroconductrice revetue d'une surgrille
US8461758B2 (en) * 2008-12-19 2013-06-11 E I Du Pont De Nemours And Company Buffer bilayers for electronic devices
US8766239B2 (en) * 2008-12-27 2014-07-01 E I Du Pont De Nemours And Company Buffer bilayers for electronic devices
US8785913B2 (en) * 2008-12-27 2014-07-22 E I Du Pont De Nemours And Company Buffer bilayers for electronic devices
KR101676394B1 (ko) * 2009-02-05 2016-11-15 코닌클리케 필립스 엔.브이. 전계발광 디바이스
CN101834009B (zh) * 2009-03-13 2013-05-01 中国科学院福建物质结构研究所 一种低铟掺杂量氧化锌透明导电膜及其制备方法
FR2944145B1 (fr) 2009-04-02 2011-08-26 Saint Gobain Procede de fabrication d'une structure a surface texturee pour dispositif a diode electroluminescente organique et structure a surface texturee
EP2450946B1 (de) * 2009-06-30 2017-01-18 Mitsubishi Materials Corporation Verfahren zur entfernung eines ferroelektrischen csd-beschichtungsfilms
US8525163B2 (en) * 2009-07-17 2013-09-03 Sharp Kabushiki Kaisha Organic EL device, method for fabricating organic EL device, and organic EL illumination system
JP4875135B2 (ja) * 2009-11-18 2012-02-15 出光興産株式会社 In−Ga−Zn−O系スパッタリングターゲット
JP4843083B2 (ja) * 2009-11-19 2011-12-21 出光興産株式会社 In−Ga−Zn系酸化物スパッタリングターゲット
GB201000453D0 (en) * 2010-01-12 2010-02-24 Cambridge Entpr Ltd Electro optic devices
FR2955575B1 (fr) 2010-01-22 2012-02-24 Saint Gobain Substrat verrier revetu d'une couche haut indice sous un revetement electrode et dispositif electroluminescent organique comportant un tel substrat.
JP2013100565A (ja) * 2010-03-03 2013-05-23 Mitsui Mining & Smelting Co Ltd 酸化ガリウム−酸化亜鉛系スパッタリングターゲットおよび酸化アルミニウム−酸化亜鉛系スパッタリングターゲット
KR101213493B1 (ko) 2010-04-13 2012-12-20 삼성디스플레이 주식회사 유기 발광 소자 및 그 제조방법
KR101783352B1 (ko) 2010-06-17 2017-10-10 삼성디스플레이 주식회사 평판 표시 장치 및 그 제조 방법
JP5718072B2 (ja) 2010-07-30 2015-05-13 三星ディスプレイ株式會社Samsung Display Co.,Ltd. 薄膜トランジスタの半導体層用酸化物およびスパッタリングターゲット、並びに薄膜トランジスタ
CN102723441A (zh) * 2011-03-29 2012-10-10 海洋王照明科技股份有限公司 高功函数多层导电膜及其制备方法、有机电致发光器件
CN102719787B (zh) * 2011-03-29 2015-09-23 海洋王照明科技股份有限公司 高功函数导电膜及其制备方法、有机电致发光器件
KR20140050597A (ko) * 2011-04-10 2014-04-29 더 거버너스 오브 더 유니버시티 오브 앨버타 몰리브덴 금속 타켓으로부터 테크네튬의 제조
DE102011018480A1 (de) * 2011-04-21 2012-10-25 Heraeus Precious Metals Gmbh & Co. Kg Fluorierte Amine als SAM in OLEDs
DE112012007295B3 (de) 2011-06-08 2022-02-03 Semiconductor Energy Laboratory Co., Ltd. Verfahren zum Herstellen eines Sputtertargets und Verfahren zum Herstellen einer Halbleitervorrichtung
KR101973207B1 (ko) * 2011-06-23 2019-04-29 삼성디스플레이 주식회사 금속 산화물이 함유된 양극 및 상기 양극을 포함하는 유기발광소자
KR101891650B1 (ko) 2011-09-22 2018-08-27 삼성디스플레이 주식회사 산화물 반도체, 이를 포함하는 박막 트랜지스터, 및 박막 트랜지스터 표시판
CN102351528B (zh) * 2011-09-28 2013-07-10 华南理工大学 硼化镧掺杂的氧化物半导体材料及其应用
JP5190554B1 (ja) * 2011-10-05 2013-04-24 日東電工株式会社 透明導電性フィルム
KR20130049620A (ko) 2011-11-04 2013-05-14 삼성디스플레이 주식회사 표시 장치
JP2015504479A (ja) 2011-11-08 2015-02-12 トーソー エスエムディー,インク. 特別な表面処理及び優れた粒子性能を有するシリコンスパッターターゲット及びその製造方法
CN102603270A (zh) * 2011-12-20 2012-07-25 中国航空工业集团公司北京航空材料研究院 稀土元素双掺纳米晶In2O3基热电陶瓷材料的制备方法
US9496426B2 (en) 2012-02-10 2016-11-15 Alliance For Sustainable Energy, Llc Thin film photovoltaic devices with a minimally conductive buffer layer
CN103289693A (zh) * 2012-02-28 2013-09-11 海洋王照明科技股份有限公司 铈铽共掺杂硼磷酸盐发光材料、制备方法及其应用
US9553201B2 (en) 2012-04-02 2017-01-24 Samsung Display Co., Ltd. Thin film transistor, thin film transistor array panel, and manufacturing method of thin film transistor
KR20130111874A (ko) 2012-04-02 2013-10-11 삼성디스플레이 주식회사 박막 트랜지스터, 이를 포함하는 박막 트랜지스터 표시판 및 표시 장치, 그리고 박막 트랜지스터의 제조 방법
US8883326B2 (en) * 2012-05-16 2014-11-11 The United States Of America, As Represented By The Secretary Of The Navy Monoclinic india stabilized gadolinia
KR20130129674A (ko) 2012-05-21 2013-11-29 삼성디스플레이 주식회사 박막 트랜지스터 및 이를 포함하는 박막 트랜지스터 표시판
CN102723385A (zh) * 2012-06-29 2012-10-10 苏州嘉言能源设备有限公司 太阳能光电转化透明薄膜
CN102723376A (zh) * 2012-06-29 2012-10-10 苏州嘉言能源设备有限公司 太阳能电池光吸收透明薄膜
JP6059460B2 (ja) * 2012-07-20 2017-01-11 株式会社コベルコ科研 ターゲット組立体
US9885108B2 (en) 2012-08-07 2018-02-06 Semiconductor Energy Laboratory Co., Ltd. Method for forming sputtering target
JP5847308B2 (ja) * 2012-10-02 2016-01-20 Jx日鉱日石金属株式会社 酸化亜鉛系焼結体、該焼結体からなる酸化亜鉛系スパッタリングターゲット及び該ターゲットをスパッタリングして得られた酸化亜鉛系薄膜
US20150270423A1 (en) 2012-11-19 2015-09-24 Alliance For Sustainable Energy, Llc Devices and methods featuring the addition of refractory metals to contact interface layers
CN104009171A (zh) * 2013-02-26 2014-08-27 海洋王照明科技股份有限公司 有机电致发光器件及其制备方法
CN104009180A (zh) * 2013-02-26 2014-08-27 海洋王照明科技股份有限公司 有机电致发光器件及其制备方法
JP6141777B2 (ja) 2013-02-28 2017-06-07 株式会社半導体エネルギー研究所 半導体装置の作製方法
CN103276357B (zh) * 2013-04-18 2015-02-18 青岛科技大学 一种提高铜表面功函数的生产工艺
JP5971201B2 (ja) * 2013-06-17 2016-08-17 住友金属鉱山株式会社 In−Ce−O系スパッタリングターゲットとその製造方法
WO2015001785A1 (ja) * 2013-07-04 2015-01-08 パナソニック株式会社 発光素子、表示装置及び発光素子の製造方法
KR101705406B1 (ko) * 2014-09-11 2017-02-10 경희대학교 산학협력단 갈륨을 포함하는 p형 산화물 반도체를 이용한 유기 발광 다이오드 및 이의 제조 방법
KR101968215B1 (ko) 2015-03-16 2019-04-11 주식회사 엘지화학 전도성 구조체 및 이를 포함하는 전자 소자
CN106187100B (zh) 2015-05-04 2019-02-12 清华大学 溅射靶及其制备方法
CN106435490B (zh) * 2015-08-06 2018-11-30 清华大学 溅射靶及氧化物半导体膜以及其制备方法
CN106435491B (zh) * 2015-08-06 2019-02-12 清华大学 溅射靶及氧化物半导体膜以及其制备方法
CN105239047A (zh) * 2015-10-08 2016-01-13 福建省诺希科技园发展有限公司 一种高导电性igzo溅射靶材的制备方法及其产品
WO2017094547A1 (ja) * 2015-11-30 2017-06-08 国立大学法人東京工業大学 光電変換素子を製造する方法
JP6574714B2 (ja) * 2016-01-25 2019-09-11 株式会社コベルコ科研 配線構造およびスパッタリングターゲット
CN106816540B (zh) * 2016-12-28 2019-04-23 上海天马有机发光显示技术有限公司 一种有机发光显示面板及装置
JP2018206467A (ja) * 2017-05-30 2018-12-27 株式会社アルバック 透明導電膜
JP6637948B2 (ja) * 2017-11-27 2020-01-29 Jx金属株式会社 Izoターゲット及びその製造方法
CN108183137B (zh) * 2017-12-28 2019-10-15 中国科学院电工研究所 用于晶硅异质结太阳电池的复合导电减反膜及其制备方法
CN108546918B (zh) * 2018-03-30 2020-01-07 湖北大学 一种超宽禁带氧化物合金半导体外延薄膜材料及其制备方法和应用
JP6677853B1 (ja) * 2019-02-07 2020-04-08 住友化学株式会社 スパッタリングターゲット、ターゲット材とバッキングプレートを接合する方法およびスパッタリングターゲットの製造方法
CN110767745A (zh) * 2019-09-18 2020-02-07 华南理工大学 复合金属氧化物半导体及薄膜晶体管与应用
CN110797395A (zh) * 2019-09-18 2020-02-14 华南理工大学 掺杂型金属氧化物半导体及薄膜晶体管与应用
CN110739221B (zh) * 2019-10-23 2022-07-05 昆明物理研究所 带隙可调的锡氧化物薄膜制备方法
CN112110721B (zh) * 2020-09-21 2022-07-01 先导薄膜材料(广东)有限公司 氧化铟锡钽靶材的制备方法
KR20220108275A (ko) * 2021-01-26 2022-08-03 삼성디스플레이 주식회사 발광 소자 및 이를 포함한 전자 장치
CN113735564A (zh) * 2021-08-11 2021-12-03 芜湖映日科技股份有限公司 一种Nb掺杂IZO靶胚及其制备方法

Family Cites Families (60)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3316548C2 (de) * 1983-03-25 1985-01-17 Flachglas AG, 8510 Fürth Verfahren zur Beschichtung eines transparenten Substrates
JPH01134895A (ja) 1987-11-20 1989-05-26 Nec Corp 薄膜elパネル
JP3058278B2 (ja) * 1989-06-13 2000-07-04 東ソー株式会社 酸化物焼結体及びその用途
US5236632A (en) * 1989-08-10 1993-08-17 Tosoh Corporation Zinc oxide sintered body, and preparation process and use thereof
JPH0371510A (ja) * 1989-08-10 1991-03-27 Showa Denko Kk 透明導電膜
JPH0482197A (ja) 1990-07-25 1992-03-16 Hitachi Ltd 薄膜el素子
JPH0576155A (ja) 1991-09-12 1993-03-26 Hitachi Ltd 車両用電装品の冷却装置
JPH05307997A (ja) * 1992-04-30 1993-11-19 Pioneer Electron Corp 有機エレクトロルミネッセンス素子
CA2150724A1 (en) 1992-12-15 1994-06-23 Akira Kaijou Transparent electrically conductive layer, electrically conductive transparent substrate and electrically conductive material
US6592782B2 (en) * 1993-12-08 2003-07-15 Eltron Research, Inc. Materials and methods for the separation of oxygen from air
US5589733A (en) * 1994-02-17 1996-12-31 Kabushiki Kaisha Toyota Chuo Kenkyusho Electroluminescent element including a dielectric film of tantalum oxide and an oxide of either indium, tin, or zinc
DE69629613T2 (de) * 1995-03-22 2004-06-17 Toppan Printing Co. Ltd. Mehrschichtiger, elektrisch leitender Film, transparentes Elektrodensubstrat und Flüssigkristallanzeige die diesen benutzen
JP3561549B2 (ja) 1995-04-07 2004-09-02 三洋電機株式会社 有機エレクトロルミネッセンス素子
JP3161278B2 (ja) * 1995-04-26 2001-04-25 株式会社村田製作所 誘電体磁器組成物
JP3447163B2 (ja) 1995-11-30 2003-09-16 出光興産株式会社 透明導電積層体
JP3746094B2 (ja) 1995-06-28 2006-02-15 出光興産株式会社 ターゲットおよびその製造方法
JP3589519B2 (ja) * 1995-11-30 2004-11-17 出光興産株式会社 タッチパネル
WO1997001853A1 (fr) * 1995-06-28 1997-01-16 Idemitsu Kosan Co., Ltd. Stratifie transparent conducteur et ecran tactile realise a partir dudit stratifie
JP2824411B2 (ja) 1995-08-25 1998-11-11 株式会社豊田中央研究所 有機薄膜発光素子
JP3943617B2 (ja) * 1995-12-07 2007-07-11 出光興産株式会社 透明導電積層体およびこれを用いたタッチパネル
JP3803132B2 (ja) * 1996-01-31 2006-08-02 出光興産株式会社 ターゲットおよびその製造方法
JPH09260063A (ja) 1996-03-25 1997-10-03 Tdk Corp 有機エレクトロルミネセンス素子
US6042752A (en) * 1997-02-21 2000-03-28 Asahi Glass Company Ltd. Transparent conductive film, sputtering target and transparent conductive film-bonded substrate
JP3925977B2 (ja) * 1997-02-21 2007-06-06 旭硝子セラミックス株式会社 透明導電膜とその製造方法およびスパッタリングターゲット
US5989634A (en) * 1997-06-25 1999-11-23 Isenberg; Arnold O. Process of manufacturing solid oxygen ion conducting oxide layers
EP0924966A1 (de) * 1997-06-30 1999-06-23 Aventis Research & Technologies GmbH & Co. KG Dünnschnitt-Elektrode für flache organische lichtemittierende Vorrichtungen und Herstellungsverfahren
TW409261B (en) * 1998-01-13 2000-10-21 Toppan Printing Co Ltd A electrode plate with transmission-type or reflection-type multilayer electroconductive film, and the process for producing the electrode plate
JPH11282383A (ja) * 1998-01-13 1999-10-15 Toppan Printing Co Ltd 電極基板およびその製造方法
EP0984859B1 (de) * 1998-03-23 2003-05-28 Presstek, Inc. Lithographisches verfahren mit anorganisch-organischen mischungen enthaltenden schichten
JP2000012234A (ja) * 1998-06-19 2000-01-14 Tdk Corp 有機el素子
JP2000040589A (ja) * 1998-07-22 2000-02-08 Tdk Corp 有機el素子
JP2000048966A (ja) * 1998-07-27 2000-02-18 Idemitsu Kosan Co Ltd 有機エレクトロルミネッセンス素子
EP2610230A2 (de) 1998-08-31 2013-07-03 Idemitsu Kosan Co., Ltd. Ziel für transparenten elektroleitfähigen Film, transparenter elektroleitfähiges Material, transparentes elektroleitfähiges Glas und transparenter elektroleitfähiger Film
JP2000147540A (ja) 1998-11-17 2000-05-26 Toppan Printing Co Ltd 電極基板およびその製造方法
US6500225B2 (en) * 1998-12-03 2002-12-31 Sumitomo Chemical Company, Limited Method for producing high density indium-tin-oxide sintered body
US6150022A (en) * 1998-12-07 2000-11-21 Flex Products, Inc. Bright metal flake based pigments
JP3824798B2 (ja) * 1999-01-21 2006-09-20 Tdk株式会社 有機el素子
CN100382354C (zh) * 1999-02-15 2008-04-16 出光兴产株式会社 有机场致发光元件及其制造方法
JP4673947B2 (ja) 1999-02-15 2011-04-20 出光興産株式会社 有機エレクトロルミネッセンス素子およびその製造方法
JP2000235893A (ja) 1999-02-15 2000-08-29 Idemitsu Kosan Co Ltd 有機エレクトロルミネッセンス素子およびその製造方法
JP2000238178A (ja) * 1999-02-24 2000-09-05 Teijin Ltd 透明導電積層体
JP2000277256A (ja) 1999-03-23 2000-10-06 Toyota Central Res & Dev Lab Inc 有機電界発光素子の製造方法及び有機電界発光素子の製造装置
JP2000294980A (ja) * 1999-04-06 2000-10-20 Nippon Sheet Glass Co Ltd 透光性電磁波フィルタおよびその製造方法
JP2000315581A (ja) 1999-04-30 2000-11-14 Idemitsu Kosan Co Ltd 有機エレクトロルミネッセンス素子およびその製造方法
EP2202822A3 (de) 1999-04-30 2010-09-15 Idemitsu Kosan Co., Ltd. Organische elektroluminszierende Vorrichtung und Verfahren zu ihrer Herstellung
JP4532671B2 (ja) * 1999-06-01 2010-08-25 新コスモス電機株式会社 水素ガス検知素子
JP4465740B2 (ja) 1999-06-21 2010-05-19 凸版印刷株式会社 電極基板の製造方法
JP4577924B2 (ja) * 1999-06-29 2010-11-10 三井金属鉱業株式会社 酸化亜鉛を含有するスパッタリングターゲットの製造方法
CN1195886C (zh) 1999-11-25 2005-04-06 出光兴产株式会社 溅射靶、透明导电氧化物和制备该溅射靶的方法
WO2001042522A2 (en) * 1999-12-03 2001-06-14 N.V. Bekaert S.A. Sputtering target and methods of making same
JP2001176670A (ja) * 1999-12-14 2001-06-29 Morio Taniguchi 光透過型有機エレクトロルミネッセンス素子及びその製造方法
JP4434411B2 (ja) 2000-02-16 2010-03-17 出光興産株式会社 アクティブ駆動型有機el発光装置およびその製造方法
JP4631122B2 (ja) * 2000-02-21 2011-02-16 Tdk株式会社 有機el素子
JP2002110365A (ja) * 2000-10-04 2002-04-12 Idemitsu Kosan Co Ltd 有機エレクトロルミネッセンス表示素子用透明電極基板および有機エレクトロルミネッセンス表示素子
JP2003068470A (ja) * 2001-06-15 2003-03-07 Sony Corp 表示素子
JP3364488B1 (ja) * 2001-07-05 2003-01-08 東京エレクトロン株式会社 反応容器のクリーニング方法及び成膜装置
JP4234006B2 (ja) * 2001-07-17 2009-03-04 出光興産株式会社 スパッタリングターゲットおよび透明導電膜
CN1545567B (zh) * 2001-08-02 2012-03-28 出光兴产株式会社 溅射靶、透明导电膜及它们的制造方法
CN101260509A (zh) * 2002-08-02 2008-09-10 出光兴产株式会社 溅射靶、烧结体及利用它们制造的导电膜、有机el元件及其所用的衬底
JP4734936B2 (ja) * 2005-01-25 2011-07-27 東ソー株式会社 Ito造粒粉末及びito焼結体並びにその製造方法

Also Published As

Publication number Publication date
KR101002492B1 (ko) 2010-12-17
TWI328616B (de) 2010-08-11
SG169230A1 (en) 2011-03-30
EP1693483A3 (de) 2006-11-22
CN102522509B (zh) 2016-01-20
US20060234088A1 (en) 2006-10-19
CN1869277A (zh) 2006-11-29
KR20050034729A (ko) 2005-04-14
TWI404810B (zh) 2013-08-11
EP1536034A1 (de) 2005-06-01
KR20060069892A (ko) 2006-06-22
TW200402475A (en) 2004-02-16
CN1675399A (zh) 2005-09-28
TW200641174A (en) 2006-12-01
CN101260509A (zh) 2008-09-10
KR101002537B1 (ko) 2010-12-17
TW201035340A (en) 2010-10-01
US20040081836A1 (en) 2004-04-29
WO2004013372A1 (ja) 2004-02-12
EP1693483B1 (de) 2009-10-07
US8093800B2 (en) 2012-01-10
US7393600B2 (en) 2008-07-01
CN100396813C (zh) 2008-06-25
EP1693483A2 (de) 2006-08-23
CN102522509A (zh) 2012-06-27
US7306861B2 (en) 2007-12-11
TWI316093B (de) 2009-10-21
CN1869277B (zh) 2010-09-29
US20080309223A1 (en) 2008-12-18
EP1536034A4 (de) 2009-12-02

Similar Documents

Publication Publication Date Title
DE60329638D1 (de) Sputtertarget, Sinterkörper, unter deren Verwendung gebildeter leitfähiger Film, organische EL-Vorrichtung und für diesen verwendetes Substrat
FR2924274B1 (fr) Substrat porteur d'une electrode, dispositif electroluminescent organique l'incorporant, et sa fabrication
WO2006129265A3 (en) Organic electroluminescent light source
DE60330696D1 (de) Organische elektrolumineszenzvorrichtung und anthracenderivat
EP1995787A3 (de) Halbleitervorrichtung mit halbleitender Oxidschicht und Herstellungsverfahren dafür
EP1938965A4 (de) Dünnfilmtonsubstrat, dünnfilmtonsubstrat mit elektrode und diese verwendende anzeige
FR2925981B1 (fr) Substrat porteur d'une electrode, dispositif electroluminescent organique l'incorporant.
AU2003209087A1 (en) Organic thin film transistors with modified surface of gate-dielectric
EP2031658A3 (de) Organische lichtemittierende Vorrichtung
WO2005109543A3 (en) Oled device using reduced drive voltage
TW200633576A (en) Organic electroluminescent element and display device including the same
TW200740723A (en) Aromatic amine derivative and organic electroluminescent element using the same
EP1921690A3 (de) Organische lichtemittierende Anzeige und Verfahren zu ihrer Herstellung
FR2868210B1 (fr) Dispositif electroluminescent organique et procede de fabrication de celui-ci
TW200746885A (en) Hot-melt type member and organic EL display panel
EP1956870A4 (de) Organisches el-leuchtbauelement
FR2886461B1 (fr) Dispositif electroluminescent organique et procede de fabrication de celui-ci
TW200739981A (en) Method for manufacturing an organic light-emitting display (OLED) with black matrix
AU2003236109A1 (en) Organic electroluminescent display element, display and method for manufacturing them
AU2003255027A1 (en) Organic el element
EP1605430A4 (de) Organische el-anzeige und aktivmatrixsubstrat
AU2003294188A1 (en) Method for manufacturing an organic electroluminescent display device, substrate to be used with such a method and an organic electroluminescent display device obtained with the method
WO2006007083A3 (en) Low power consumption oled material for display applications
TW200717808A (en) Flexible thin film transistor substrate and method of fabricating the same
WO2005085496A3 (en) Ferroelectric thin film composites with improved top contact adhesion and devices containing the same

Legal Events

Date Code Title Description
8364 No opposition during term of opposition