DE60329924D1 - Nichtflüchtiger speicher und ausleseverfahren - Google Patents

Nichtflüchtiger speicher und ausleseverfahren

Info

Publication number
DE60329924D1
DE60329924D1 DE60329924T DE60329924T DE60329924D1 DE 60329924 D1 DE60329924 D1 DE 60329924D1 DE 60329924 T DE60329924 T DE 60329924T DE 60329924 T DE60329924 T DE 60329924T DE 60329924 D1 DE60329924 D1 DE 60329924D1
Authority
DE
Germany
Prior art keywords
sense amplifiers
operating environment
volatile memory
properties
selecting procedure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60329924T
Other languages
English (en)
Inventor
Raul-Adrian Cernea
Yan Li
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SanDisk Corp
Original Assignee
SanDisk Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SanDisk Corp filed Critical SanDisk Corp
Priority claimed from PCT/US2003/029603 external-priority patent/WO2004029984A2/en
Application granted granted Critical
Publication of DE60329924D1 publication Critical patent/DE60329924D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/026—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in sense amplifiers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/06—Sense amplifier related aspects
    • G11C2207/065—Sense amplifier drivers
DE60329924T 2002-09-24 2003-09-23 Nichtflüchtiger speicher und ausleseverfahren Expired - Lifetime DE60329924D1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/254,830 US7196931B2 (en) 2002-09-24 2002-09-24 Non-volatile memory and method with reduced source line bias errors
US10/665,828 US7023736B2 (en) 2002-09-24 2003-09-17 Non-volatile memory and method with improved sensing
PCT/US2003/029603 WO2004029984A2 (en) 2002-09-24 2003-09-23 Non-volatile memory and its sensing method

Publications (1)

Publication Number Publication Date
DE60329924D1 true DE60329924D1 (de) 2009-12-17

Family

ID=31993403

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60329924T Expired - Lifetime DE60329924D1 (de) 2002-09-24 2003-09-23 Nichtflüchtiger speicher und ausleseverfahren

Country Status (6)

Country Link
US (4) US7196931B2 (de)
EP (1) EP1610335B1 (de)
CN (2) CN101615428B (de)
AT (2) ATE533160T1 (de)
DE (1) DE60329924D1 (de)
TW (1) TWI315525B (de)

Families Citing this family (315)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7177197B2 (en) * 2001-09-17 2007-02-13 Sandisk Corporation Latched programming of memory and method
US7170802B2 (en) 2003-12-31 2007-01-30 Sandisk Corporation Flexible and area efficient column redundancy for non-volatile memories
US6985388B2 (en) 2001-09-17 2006-01-10 Sandisk Corporation Dynamic column block selection
US7312785B2 (en) 2001-10-22 2007-12-25 Apple Inc. Method and apparatus for accelerated scrolling
US7345671B2 (en) * 2001-10-22 2008-03-18 Apple Inc. Method and apparatus for use of rotational user inputs
US7333092B2 (en) 2002-02-25 2008-02-19 Apple Computer, Inc. Touch pad for handheld device
US7443757B2 (en) 2002-09-24 2008-10-28 Sandisk Corporation Non-volatile memory and method with reduced bit line crosstalk errors
US7196931B2 (en) * 2002-09-24 2007-03-27 Sandisk Corporation Non-volatile memory and method with reduced source line bias errors
US6987693B2 (en) 2002-09-24 2006-01-17 Sandisk Corporation Non-volatile memory and method with reduced neighboring field errors
US7324393B2 (en) * 2002-09-24 2008-01-29 Sandisk Corporation Method for compensated sensing in non-volatile memory
EP1543529B1 (de) 2002-09-24 2009-11-04 SanDisk Corporation Nichtflüchtiger speicher und ausleseverfahren
US7046568B2 (en) * 2002-09-24 2006-05-16 Sandisk Corporation Memory sensing circuit and method for low voltage operation
US7327619B2 (en) * 2002-09-24 2008-02-05 Sandisk Corporation Reference sense amplifier for non-volatile memory
JP4426868B2 (ja) * 2003-04-04 2010-03-03 株式会社ルネサステクノロジ 不揮発性半導体記憶装置および半導体集積回路装置
US7499040B2 (en) 2003-08-18 2009-03-03 Apple Inc. Movable touch pad with added functionality
US20070152977A1 (en) 2005-12-30 2007-07-05 Apple Computer, Inc. Illuminated touchpad
US6956770B2 (en) 2003-09-17 2005-10-18 Sandisk Corporation Non-volatile memory and method with bit line compensation dependent on neighboring operating modes
US7064980B2 (en) 2003-09-17 2006-06-20 Sandisk Corporation Non-volatile memory and method with bit line coupled compensation
US7173852B2 (en) * 2003-10-03 2007-02-06 Sandisk Corporation Corrected data storage and handling methods
JP4287235B2 (ja) * 2003-10-09 2009-07-01 株式会社東芝 不揮発性半導体記憶装置
US8059099B2 (en) 2006-06-02 2011-11-15 Apple Inc. Techniques for interactive input to portable electronic devices
US7495659B2 (en) 2003-11-25 2009-02-24 Apple Inc. Touch pad for handheld device
US7490283B2 (en) 2004-05-13 2009-02-10 Sandisk Corporation Pipelined data relocation and improved chip architectures
JP4271168B2 (ja) * 2004-08-13 2009-06-03 株式会社東芝 半導体記憶装置
ATE553429T1 (de) 2004-08-16 2012-04-15 Apple Inc Verfahren zur erhöhung der räumlichen auflösung von berührungsempfindlichen vorrichtungen
US7120051B2 (en) * 2004-12-14 2006-10-10 Sandisk Corporation Pipelined programming of non-volatile memories using early data
US7158421B2 (en) * 2005-04-01 2007-01-02 Sandisk Corporation Use of data latches in multi-phase programming of non-volatile memories
US7420847B2 (en) * 2004-12-14 2008-09-02 Sandisk Corporation Multi-state memory having data recovery after program fail
US7386655B2 (en) 2004-12-16 2008-06-10 Sandisk Corporation Non-volatile memory and method with improved indexing for scratch pad and update blocks
US7366826B2 (en) 2004-12-16 2008-04-29 Sandisk Corporation Non-volatile memory and method with multi-stream update tracking
US7315916B2 (en) * 2004-12-16 2008-01-01 Sandisk Corporation Scratch pad block
US7412560B2 (en) 2004-12-16 2008-08-12 Sandisk Corporation Non-volatile memory and method with multi-stream updating
US7849381B2 (en) * 2004-12-21 2010-12-07 Sandisk Corporation Method for copying data in reprogrammable non-volatile memory
US20060140007A1 (en) * 2004-12-29 2006-06-29 Raul-Adrian Cernea Non-volatile memory and method with shared processing for an aggregate of read/write circuits
US7251160B2 (en) 2005-03-16 2007-07-31 Sandisk Corporation Non-volatile memory and method with power-saving read and program-verify operations
US7447078B2 (en) * 2005-04-01 2008-11-04 Sandisk Corporation Method for non-volatile memory with background data latch caching during read operations
US7170784B2 (en) * 2005-04-01 2007-01-30 Sandisk Corporation Non-volatile memory and method with control gate compensation for source line bias errors
US7173854B2 (en) * 2005-04-01 2007-02-06 Sandisk Corporation Non-volatile memory and method with compensation for source line bias errors
US7206230B2 (en) 2005-04-01 2007-04-17 Sandisk Corporation Use of data latches in cache operations of non-volatile memories
US7463521B2 (en) 2005-04-01 2008-12-09 Sandisk Corporation Method for non-volatile memory with managed execution of cached data
US7196928B2 (en) * 2005-04-05 2007-03-27 Sandisk Corporation Compensating for coupling during read operations of non-volatile memory
US7196946B2 (en) * 2005-04-05 2007-03-27 Sandisk Corporation Compensating for coupling in non-volatile storage
US7187585B2 (en) * 2005-04-05 2007-03-06 Sandisk Corporation Read operation for non-volatile storage that includes compensation for coupling
US7193898B2 (en) * 2005-06-20 2007-03-20 Sandisk Corporation Compensation currents in non-volatile memory read operations
US7880729B2 (en) 2005-10-11 2011-02-01 Apple Inc. Center button isolation ring
US7301817B2 (en) 2005-10-27 2007-11-27 Sandisk Corporation Method for programming of multi-state non-volatile memory using smart verify
US7366022B2 (en) * 2005-10-27 2008-04-29 Sandisk Corporation Apparatus for programming of multi-state non-volatile memory using smart verify
US7379330B2 (en) * 2005-11-08 2008-05-27 Sandisk Corporation Retargetable memory cell redundancy methods
KR100706789B1 (ko) * 2005-11-17 2007-04-12 삼성전자주식회사 비휘발성 메모리 소자
US7349258B2 (en) * 2005-12-06 2008-03-25 Sandisk Corporation Reducing read disturb for non-volatile storage
US7262994B2 (en) * 2005-12-06 2007-08-28 Sandisk Corporation System for reducing read disturb for non-volatile storage
JP4901204B2 (ja) * 2005-12-13 2012-03-21 株式会社東芝 半導体集積回路装置
US7355888B2 (en) * 2005-12-19 2008-04-08 Sandisk Corporation Apparatus for programming non-volatile memory with reduced program disturb using modified pass voltages
US7355889B2 (en) * 2005-12-19 2008-04-08 Sandisk Corporation Method for programming non-volatile memory with reduced program disturb using modified pass voltages
US7365018B2 (en) * 2005-12-28 2008-04-29 Sandisk Corporation Fabrication of semiconductor device for flash memory with increased select gate width
US7349260B2 (en) * 2005-12-29 2008-03-25 Sandisk Corporation Alternate row-based reading and writing for non-volatile memory
US7224614B1 (en) 2005-12-29 2007-05-29 Sandisk Corporation Methods for improved program-verify operations in non-volatile memories
US7443726B2 (en) * 2005-12-29 2008-10-28 Sandisk Corporation Systems for alternate row-based reading and writing for non-volatile memory
US7310255B2 (en) 2005-12-29 2007-12-18 Sandisk Corporation Non-volatile memory with improved program-verify operations
US7447094B2 (en) * 2005-12-29 2008-11-04 Sandisk Corporation Method for power-saving multi-pass sensing in non-volatile memory
US7733704B2 (en) * 2005-12-29 2010-06-08 Sandisk Corporation Non-volatile memory with power-saving multi-pass sensing
US20070152983A1 (en) 2005-12-30 2007-07-05 Apple Computer, Inc. Touch pad with symbols based on mode
CN101395673B (zh) 2006-03-03 2011-09-21 桑迪士克股份有限公司 对浮动栅极耦合具有补偿的非易失性存储装置的读取操作
US7436733B2 (en) * 2006-03-03 2008-10-14 Sandisk Corporation System for performing read operation on non-volatile storage with compensation for coupling
US7499319B2 (en) * 2006-03-03 2009-03-03 Sandisk Corporation Read operation for non-volatile storage with compensation for coupling
US7606075B2 (en) * 2006-04-19 2009-10-20 Micron Technology, Inc. Read operation for NAND memory
EP2016590B1 (de) 2006-05-05 2011-10-26 SanDisk Corporation Nicht flüchtiger speicher mit hintergrund-datensperren-caching während leseoperationen und entsprechende verfahren
TWI427637B (zh) * 2006-05-05 2014-02-21 Sandisk Technologies Inc 在程式執行期間具有背景資料鎖存快取的非揮發性記憶體及方法
US7457163B2 (en) 2006-06-01 2008-11-25 Sandisk Corporation System for verifying non-volatile storage using different voltages
US7440331B2 (en) 2006-06-01 2008-10-21 Sandisk Corporation Verify operation for non-volatile storage using different voltages
US7870736B2 (en) * 2006-06-01 2011-01-18 Virginia Tech Intellectual Properties, Inc. Premixing injector for gas turbine engines
US7310272B1 (en) * 2006-06-02 2007-12-18 Sandisk Corporation System for performing data pattern sensitivity compensation using different voltage
US7450421B2 (en) * 2006-06-02 2008-11-11 Sandisk Corporation Data pattern sensitivity compensation using different voltage
US7391650B2 (en) * 2006-06-16 2008-06-24 Sandisk Corporation Method for operating non-volatile memory using temperature compensation of voltages of unselected word lines and select gates
US7342831B2 (en) * 2006-06-16 2008-03-11 Sandisk Corporation System for operating non-volatile memory using temperature compensation of voltages of unselected word lines and select gates
US7349261B2 (en) * 2006-06-19 2008-03-25 Sandisk Corporation Method for increasing programming speed for non-volatile memory by applying counter-transitioning waveforms to word lines
US7606084B2 (en) * 2006-06-19 2009-10-20 Sandisk Corporation Programming differently sized margins and sensing with compensations at select states for improved read operations in non-volatile memory
US7492633B2 (en) * 2006-06-19 2009-02-17 Sandisk Corporation System for increasing programming speed for non-volatile memory by applying counter-transitioning waveforms to word lines
US7352628B2 (en) * 2006-06-19 2008-04-01 Sandisk Corporation Systems for programming differently sized margins and sensing with compensations at select states for improved read operations in a non-volatile memory
US7489549B2 (en) * 2006-06-22 2009-02-10 Sandisk Corporation System for non-real time reprogramming of non-volatile memory to achieve tighter distribution of threshold voltages
US7486561B2 (en) * 2006-06-22 2009-02-03 Sandisk Corporation Method for non-real time reprogramming of non-volatile memory to achieve tighter distribution of threshold voltages
US20070297247A1 (en) * 2006-06-26 2007-12-27 Gerrit Jan Hemink Method for programming non-volatile memory using variable amplitude programming pulses
US9360967B2 (en) * 2006-07-06 2016-06-07 Apple Inc. Mutual capacitance touch sensing device
US8743060B2 (en) 2006-07-06 2014-06-03 Apple Inc. Mutual capacitance touch sensing device
US8022935B2 (en) 2006-07-06 2011-09-20 Apple Inc. Capacitance sensing electrode with integrated I/O mechanism
EP2047473B1 (de) * 2006-07-20 2011-08-31 Sandisk Corporation Kompensation für die kopplung zwischen benachbarten speicherelementen in einem nichtflüchtigen speicher auf der basis der abtastung eines nachbarn mit kopplung
US7522454B2 (en) * 2006-07-20 2009-04-21 Sandisk Corporation Compensating for coupling based on sensing a neighbor using coupling
US7885119B2 (en) 2006-07-20 2011-02-08 Sandisk Corporation Compensating for coupling during programming
US7495953B2 (en) * 2006-07-20 2009-02-24 Sandisk Corporation System for configuring compensation
US7894269B2 (en) * 2006-07-20 2011-02-22 Sandisk Corporation Nonvolatile memory and method for compensating during programming for perturbing charges of neighboring cells
US7443729B2 (en) * 2006-07-20 2008-10-28 Sandisk Corporation System that compensates for coupling based on sensing a neighbor using coupling
US7400535B2 (en) * 2006-07-20 2008-07-15 Sandisk Corporation System that compensates for coupling during programming
US7506113B2 (en) * 2006-07-20 2009-03-17 Sandisk Corporation Method for configuring compensation
US7734861B2 (en) * 2006-09-08 2010-06-08 Sandisk Corporation Pseudo random and command driven bit compensation for the cycling effects in flash memory
US7606966B2 (en) * 2006-09-08 2009-10-20 Sandisk Corporation Methods in a pseudo random and command driven bit compensation for the cycling effects in flash memory
US7885112B2 (en) * 2007-09-07 2011-02-08 Sandisk Corporation Nonvolatile memory and method for on-chip pseudo-randomization of data within a page and between pages
US7795553B2 (en) 2006-09-11 2010-09-14 Apple Inc. Hybrid button
DE602006013977D1 (de) * 2006-09-13 2010-06-10 Hynix Semiconductor Inc Verfahren zum Festlegen der Leseauswertungszeit in einer nicht-flüchtigen NAND-Speichervorrichtung
US7423476B2 (en) * 2006-09-25 2008-09-09 Micron Technology, Inc. Current mirror circuit having drain-source voltage clamp
US7977186B2 (en) * 2006-09-28 2011-07-12 Sandisk Corporation Providing local boosting control implant for non-volatile memory
US7705387B2 (en) * 2006-09-28 2010-04-27 Sandisk Corporation Non-volatile memory with local boosting control implant
US7684247B2 (en) * 2006-09-29 2010-03-23 Sandisk Corporation Reverse reading in non-volatile memory with compensation for coupling
US7447076B2 (en) * 2006-09-29 2008-11-04 Sandisk Corporation Systems for reverse reading in non-volatile memory with compensation for coupling
US20080088600A1 (en) * 2006-10-11 2008-04-17 Apple Inc. Method and apparatus for implementing multiple push buttons in a user input device
US8274479B2 (en) 2006-10-11 2012-09-25 Apple Inc. Gimballed scroll wheel
US7616490B2 (en) * 2006-10-17 2009-11-10 Sandisk Corporation Programming non-volatile memory with dual voltage select gate structure
US7691710B2 (en) * 2006-10-17 2010-04-06 Sandisk Corporation Fabricating non-volatile memory with dual voltage select gate structure
US7586157B2 (en) * 2006-10-17 2009-09-08 Sandisk Corporation Non-volatile memory with dual voltage select gate structure
US7440323B2 (en) * 2006-11-02 2008-10-21 Sandisk Corporation Reducing program disturb in non-volatile memory using multiple boosting modes
US7468911B2 (en) * 2006-11-02 2008-12-23 Sandisk Corporation Non-volatile memory using multiple boosting modes for reduced program disturb
US7508710B2 (en) * 2006-11-13 2009-03-24 Sandisk Corporation Operating non-volatile memory with boost structures
US8482530B2 (en) 2006-11-13 2013-07-09 Apple Inc. Method of capacitively sensing finger position
US7696035B2 (en) * 2006-11-13 2010-04-13 Sandisk Corporation Method for fabricating non-volatile memory with boost structures
US7508703B2 (en) * 2006-11-13 2009-03-24 Sandisk Corporation Non-volatile memory with boost structures
US7623387B2 (en) * 2006-12-12 2009-11-24 Sandisk Corporation Non-volatile storage with early source-side boosting for reducing program disturb
US7623386B2 (en) * 2006-12-12 2009-11-24 Sandisk Corporation Reducing program disturb in non-volatile storage using early source-side boosting
US7616506B2 (en) * 2006-12-28 2009-11-10 Sandisk Corporation Systems for complete word line look ahead with efficient data latch assignment in non-volatile memory read operations
US7616505B2 (en) * 2006-12-28 2009-11-10 Sandisk Corporation Complete word line look ahead with efficient data latch assignment in non-volatile memory read operations
WO2008083132A2 (en) * 2006-12-28 2008-07-10 Sandisk Corporation Complete word line look ahead with efficient data latch assignment in non-volatile memory read operations
US7495962B2 (en) * 2006-12-29 2009-02-24 Sandisk Corporation Alternating read mode
US7606070B2 (en) * 2006-12-29 2009-10-20 Sandisk Corporation Systems for margined neighbor reading for non-volatile memory read operations including coupling compensation
US7518923B2 (en) * 2006-12-29 2009-04-14 Sandisk Corporation Margined neighbor reading for non-volatile memory read operations including coupling compensation
US7590002B2 (en) * 2006-12-29 2009-09-15 Sandisk Corporation Resistance sensing and compensation for non-volatile storage
US7440324B2 (en) * 2006-12-29 2008-10-21 Sandisk Corporation Apparatus with alternating read mode
CN101627443B (zh) * 2006-12-29 2012-10-03 桑迪士克股份有限公司 通过考虑相邻存储器单元的所存储状态来读取非易失性存储器单元
US7616498B2 (en) * 2006-12-29 2009-11-10 Sandisk Corporation Non-volatile storage system with resistance sensing and compensation
US7468920B2 (en) 2006-12-30 2008-12-23 Sandisk Corporation Applying adaptive body bias to non-volatile storage
US7525843B2 (en) * 2006-12-30 2009-04-28 Sandisk Corporation Non-volatile storage with adaptive body bias
US7468919B2 (en) * 2006-12-30 2008-12-23 Sandisk Corporation Biasing non-volatile storage based on selected word line
US7554853B2 (en) * 2006-12-30 2009-06-30 Sandisk Corporation Non-volatile storage with bias based on selective word line
US7583535B2 (en) * 2006-12-30 2009-09-01 Sandisk Corporation Biasing non-volatile storage to compensate for temperature variations
US7583539B2 (en) * 2006-12-30 2009-09-01 Sandisk Corporation Non-volatile storage with bias for temperature compensation
US7633797B2 (en) * 2007-01-25 2009-12-15 Macronix International Co., Ltd. Flash memory and method for determining logic states thereof
US7679965B2 (en) * 2007-01-31 2010-03-16 Sandisk Il Ltd Flash memory with improved programming precision
KR101147522B1 (ko) 2007-02-20 2012-05-21 샌디스크 테크놀로지스, 인코포레이티드 임계전압 분포에 기반한 동적 검증
US7499320B2 (en) * 2007-03-07 2009-03-03 Sandisk Corporation Non-volatile memory with cache page copy
US7502255B2 (en) * 2007-03-07 2009-03-10 Sandisk Corporation Method for cache page copy in a non-volatile memory
US7535764B2 (en) * 2007-03-21 2009-05-19 Sandisk Corporation Adjusting resistance of non-volatile memory using dummy memory cells
US7904793B2 (en) * 2007-03-29 2011-03-08 Sandisk Corporation Method for decoding data in non-volatile storage using reliability metrics based on multiple reads
US7797480B2 (en) * 2007-03-29 2010-09-14 Sandisk Corporation Method for reading non-volatile storage using pre-conditioning waveforms and modified reliability metrics
US7606076B2 (en) * 2007-04-05 2009-10-20 Sandisk Corporation Sensing in non-volatile storage using pulldown to regulated source voltage to remove system noise
US7539060B2 (en) * 2007-04-05 2009-05-26 Sandisk Corporation Non-volatile storage using current sensing with biasing of source and P-Well
US20080247237A1 (en) * 2007-04-09 2008-10-09 Takumi Abe Semiconductor memory device in which sense timing of sense amplifier can be controlled by constant current charge
US7606071B2 (en) * 2007-04-24 2009-10-20 Sandisk Corporation Compensating source voltage drop in non-volatile storage
US7606072B2 (en) * 2007-04-24 2009-10-20 Sandisk Corporation Non-volatile storage with compensation for source voltage drop
US7440327B1 (en) 2007-04-25 2008-10-21 Sandisk Corporation Non-volatile storage with reduced power consumption during read operations
US7606079B2 (en) * 2007-04-25 2009-10-20 Sandisk Corporation Reducing power consumption during read operations in non-volatile storage
US7463522B2 (en) * 2007-05-07 2008-12-09 Sandisk Corporation Non-volatile storage with boosting using channel isolation switching
US7460404B1 (en) * 2007-05-07 2008-12-02 Sandisk Corporation Boosting for non-volatile storage using channel isolation switching
US7577026B2 (en) * 2007-05-07 2009-08-18 Sandisk Corporation Source and drain side early boosting using local self boosting for non-volatile storage
US8073648B2 (en) * 2007-05-14 2011-12-06 Sandisk Il Ltd. Measuring threshold voltage distribution in memory using an aggregate characteristic
WO2008154229A1 (en) * 2007-06-07 2008-12-18 Sandisk Corporation Non-volatile memory and method for improved sensing having bit-line lockout control
US7492640B2 (en) 2007-06-07 2009-02-17 Sandisk Corporation Sensing with bit-line lockout control in non-volatile memory
US7489553B2 (en) * 2007-06-07 2009-02-10 Sandisk Corporation Non-volatile memory with improved sensing having bit-line lockout control
US7471567B1 (en) 2007-06-29 2008-12-30 Sandisk Corporation Method for source bias all bit line sensing in non-volatile storage
US7545678B2 (en) * 2007-06-29 2009-06-09 Sandisk Corporation Non-volatile storage with source bias all bit line sensing
US7813198B2 (en) * 2007-08-01 2010-10-12 Texas Instruments Incorporated System and method for reading memory
WO2009032898A2 (en) 2007-09-04 2009-03-12 Apple Inc. Compact input device
US8683378B2 (en) 2007-09-04 2014-03-25 Apple Inc. Scrolling techniques for user interfaces
US7818493B2 (en) * 2007-09-07 2010-10-19 Sandisk Corporation Adaptive block list management
US7652929B2 (en) * 2007-09-17 2010-01-26 Sandisk Corporation Non-volatile memory and method for biasing adjacent word line for verify during programming
US7551477B2 (en) * 2007-09-26 2009-06-23 Sandisk Corporation Multiple bit line voltages based on distance
US7577034B2 (en) * 2007-09-26 2009-08-18 Sandisk Corporation Reducing programming voltage differential nonlinearity in non-volatile storage
US7613045B2 (en) * 2007-11-26 2009-11-03 Sandisk Il, Ltd. Operation sequence and commands for measuring threshold voltage distribution in memory
US8416198B2 (en) 2007-12-03 2013-04-09 Apple Inc. Multi-dimensional scroll wheel
US7688638B2 (en) * 2007-12-07 2010-03-30 Sandisk Corporation Faster programming of multi-level non-volatile storage through reduced verify operations
US7764547B2 (en) 2007-12-20 2010-07-27 Sandisk Corporation Regulation of source potential to combat cell source IR drop
US7701761B2 (en) * 2007-12-20 2010-04-20 Sandisk Corporation Read, verify word line reference voltage to track source level
JP2009151886A (ja) * 2007-12-21 2009-07-09 Toshiba Corp 半導体記憶装置
US8125461B2 (en) 2008-01-11 2012-02-28 Apple Inc. Dynamic input graphic display
US8820133B2 (en) 2008-02-01 2014-09-02 Apple Inc. Co-extruded materials and methods
JP2009199675A (ja) 2008-02-22 2009-09-03 Seiko Instruments Inc 不揮発性半導体記憶装置
US9454256B2 (en) * 2008-03-14 2016-09-27 Apple Inc. Sensor configurations of an input device that are switchable based on mode
KR101462488B1 (ko) * 2008-03-31 2014-11-18 삼성전자주식회사 더미셀을 이용한 플래시 메모리 장치 및 그것의 동작 방법
US7915664B2 (en) * 2008-04-17 2011-03-29 Sandisk Corporation Non-volatile memory with sidewall channels and raised source/drain regions
US8051240B2 (en) * 2008-05-09 2011-11-01 Sandisk Technologies Inc. Compensating non-volatile storage using different pass voltages during program-verify and read
US7719902B2 (en) * 2008-05-23 2010-05-18 Sandisk Corporation Enhanced bit-line pre-charge scheme for increasing channel boosting in non-volatile storage
US7957197B2 (en) * 2008-05-28 2011-06-07 Sandisk Corporation Nonvolatile memory with a current sense amplifier having a precharge circuit and a transfer gate coupled to a sense node
JP2009295221A (ja) * 2008-06-04 2009-12-17 Toshiba Corp 半導体記憶装置
US7848144B2 (en) * 2008-06-16 2010-12-07 Sandisk Corporation Reverse order page writing in flash memories
US7800956B2 (en) * 2008-06-27 2010-09-21 Sandisk Corporation Programming algorithm to reduce disturb with minimal extra time penalty
US20100060568A1 (en) * 2008-09-05 2010-03-11 Apple Inc. Curved surface input device with normalized capacitive sensing
US8130552B2 (en) * 2008-09-11 2012-03-06 Sandisk Technologies Inc. Multi-pass programming for memory with reduced data storage requirement
US8816967B2 (en) 2008-09-25 2014-08-26 Apple Inc. Capacitive sensor having electrodes arranged on the substrate and the flex circuit
JP2010129125A (ja) 2008-11-27 2010-06-10 Toshiba Corp 多値不揮発性半導体メモリ
JP5193830B2 (ja) 2008-12-03 2013-05-08 株式会社東芝 不揮発性半導体メモリ
US8395590B2 (en) 2008-12-17 2013-03-12 Apple Inc. Integrated contact switch and touch sensor elements
US7974133B2 (en) 2009-01-06 2011-07-05 Sandisk Technologies Inc. Robust sensing circuit and method
KR101005184B1 (ko) * 2009-02-26 2011-01-04 주식회사 하이닉스반도체 불휘발성 메모리 장치 및 그 동작 방법
US8026544B2 (en) 2009-03-30 2011-09-27 Sandisk Technologies Inc. Fabricating and operating a memory array having a multi-level cell region and a single-level cell region
US7907449B2 (en) 2009-04-09 2011-03-15 Sandisk Corporation Two pass erase for non-volatile storage
US9354751B2 (en) 2009-05-15 2016-05-31 Apple Inc. Input device with optimized capacitive sensing
US8027195B2 (en) * 2009-06-05 2011-09-27 SanDisk Technologies, Inc. Folding data stored in binary format into multi-state format within non-volatile memory devices
US8102705B2 (en) 2009-06-05 2012-01-24 Sandisk Technologies Inc. Structure and method for shuffling data within non-volatile memory devices
US7974124B2 (en) * 2009-06-24 2011-07-05 Sandisk Corporation Pointer based column selection techniques in non-volatile memories
US8054691B2 (en) 2009-06-26 2011-11-08 Sandisk Technologies Inc. Detecting the completion of programming for non-volatile storage
US20110002169A1 (en) 2009-07-06 2011-01-06 Yan Li Bad Column Management with Bit Information in Non-Volatile Memory Systems
US8872771B2 (en) 2009-07-07 2014-10-28 Apple Inc. Touch sensing device having conductive nodes
US8383479B2 (en) 2009-07-21 2013-02-26 Sandisk Technologies Inc. Integrated nanostructure-based non-volatile memory fabrication
US8144511B2 (en) 2009-08-19 2012-03-27 Sandisk Technologies Inc. Selective memory cell program and erase
KR101669550B1 (ko) * 2009-09-10 2016-10-26 삼성전자주식회사 공통 소스 라인의 노이즈를 줄이는 플래시 메모리 장치, 그것의 동작 방법, 그리고 그것을 포함하는 메모리 시스템
US8400854B2 (en) 2009-09-11 2013-03-19 Sandisk Technologies Inc. Identifying at-risk data in non-volatile storage
US8634240B2 (en) * 2009-10-28 2014-01-21 SanDisk Technologies, Inc. Non-volatile memory and method with accelerated post-write read to manage errors
US8214700B2 (en) 2009-10-28 2012-07-03 Sandisk Technologies Inc. Non-volatile memory and method with post-write read and adaptive re-write to manage errors
US8423866B2 (en) * 2009-10-28 2013-04-16 SanDisk Technologies, Inc. Non-volatile memory and method with post-write read and adaptive re-write to manage errors
US8473809B2 (en) 2009-11-20 2013-06-25 Sandisk Technologies Inc. Data coding for improved ECC efficiency
US8174895B2 (en) 2009-12-15 2012-05-08 Sandisk Technologies Inc. Programming non-volatile storage with fast bit detection and verify skip
US8468294B2 (en) * 2009-12-18 2013-06-18 Sandisk Technologies Inc. Non-volatile memory with multi-gear control using on-chip folding of data
US8725935B2 (en) 2009-12-18 2014-05-13 Sandisk Technologies Inc. Balanced performance for on-chip folding of non-volatile memories
US8144512B2 (en) 2009-12-18 2012-03-27 Sandisk Technologies Inc. Data transfer flows for on-chip folding
US8107298B2 (en) * 2010-01-29 2012-01-31 Sandisk Technologies Inc. Non-volatile memory with fast binary programming and reduced power consumption
US8213255B2 (en) 2010-02-19 2012-07-03 Sandisk Technologies Inc. Non-volatile storage with temperature compensation based on neighbor state information
JP2011204302A (ja) * 2010-03-24 2011-10-13 Toshiba Corp 半導体記憶装置
US8233324B2 (en) 2010-03-25 2012-07-31 Sandisk Il Ltd. Simultaneous multi-state read or verify in non-volatile storage
US8218366B2 (en) 2010-04-18 2012-07-10 Sandisk Technologies Inc. Programming non-volatile storage including reducing impact from other memory cells
US8208310B2 (en) 2010-05-04 2012-06-26 Sandisk Technologies Inc. Mitigating channel coupling effects during sensing of non-volatile storage elements
US8274831B2 (en) 2010-05-24 2012-09-25 Sandisk Technologies Inc. Programming non-volatile storage with synchronized coupling
US8546239B2 (en) 2010-06-11 2013-10-01 Sandisk Technologies Inc. Methods of fabricating non-volatile memory with air gaps
US8603890B2 (en) 2010-06-19 2013-12-10 Sandisk Technologies Inc. Air gap isolation in non-volatile memory
US8946048B2 (en) 2010-06-19 2015-02-03 Sandisk Technologies Inc. Method of fabricating non-volatile memory with flat cell structures and air gap isolation
US8369156B2 (en) 2010-07-13 2013-02-05 Sandisk Technologies Inc. Fast random access to non-volatile storage
KR101184814B1 (ko) * 2010-10-26 2012-09-20 에스케이하이닉스 주식회사 불휘발성 메모리 장치 및 이의 프로그램 방법
US8520441B2 (en) 2010-11-16 2013-08-27 Sandisk Technologies Inc. Word line kicking when sensing non-volatile storage
US8472280B2 (en) 2010-12-21 2013-06-25 Sandisk Technologies Inc. Alternate page by page programming scheme
US8778749B2 (en) 2011-01-12 2014-07-15 Sandisk Technologies Inc. Air isolation in high density non-volatile memory
US20120228691A1 (en) 2011-03-08 2012-09-13 Mohan Dunga Pn floating gate non-volatile storage element
US8503229B2 (en) 2011-03-22 2013-08-06 Sandisk Technologies Inc. P-/Metal floating gate non-volatile storage element
JP2012203929A (ja) 2011-03-23 2012-10-22 Toshiba Corp 半導体記憶装置
US9342446B2 (en) 2011-03-29 2016-05-17 SanDisk Technologies, Inc. Non-volatile memory system allowing reverse eviction of data updates to non-volatile binary cache
US8472266B2 (en) 2011-03-31 2013-06-25 Sandisk Technologies Inc. Reducing neighbor read disturb
US8843693B2 (en) 2011-05-17 2014-09-23 SanDisk Technologies, Inc. Non-volatile memory and method with improved data scrambling
US8456911B2 (en) 2011-06-07 2013-06-04 Sandisk Technologies Inc. Intelligent shifting of read pass voltages for non-volatile storage
CN102223098A (zh) * 2011-06-15 2011-10-19 山亿新能源股份有限公司 一种单相逆变器及其控制方法
KR101861084B1 (ko) * 2011-07-11 2018-05-28 삼성전자주식회사 비휘발성 메모리 장치, 이의 동작 방법, 및 비휘발성 메모리 장치를 포함하는 전자 장치
US8726104B2 (en) 2011-07-28 2014-05-13 Sandisk Technologies Inc. Non-volatile memory and method with accelerated post-write read using combined verification of multiple pages
US8743615B2 (en) 2011-08-22 2014-06-03 Sandisk Technologies Inc. Read compensation for partially programmed blocks of non-volatile storage
US8638606B2 (en) 2011-09-16 2014-01-28 Sandisk Technologies Inc. Substrate bias during program of non-volatile storage
WO2013043602A2 (en) 2011-09-19 2013-03-28 SanDisk Technologies, Inc. High endurance non-volatile storage
JP2013069356A (ja) 2011-09-20 2013-04-18 Toshiba Corp 半導体記憶装置
US8406053B1 (en) 2011-09-21 2013-03-26 Sandisk Technologies Inc. On chip dynamic read for non-volatile storage
US8917554B2 (en) 2011-10-26 2014-12-23 Sandisk Technologies Inc. Back-biasing word line switch transistors
US9036416B2 (en) 2011-11-18 2015-05-19 Sandisk Technologies Inc. Non-volatile storage with broken word line screen and data recovery
US9036415B2 (en) 2011-12-21 2015-05-19 Sandisk Technologies Inc. Mitigating variations arising from simultaneous multi-state sensing
KR20130092174A (ko) * 2012-02-10 2013-08-20 에스케이하이닉스 주식회사 불휘발성 반도체 메모리 장치 및 이 장치의 데이터 센싱 방법
US8582381B2 (en) 2012-02-23 2013-11-12 SanDisk Technologies, Inc. Temperature based compensation during verify operations for non-volatile storage
US8937835B2 (en) 2012-03-13 2015-01-20 Sandisk Technologies Inc. Non-volatile storage with read process that reduces disturb
US8842473B2 (en) 2012-03-15 2014-09-23 Sandisk Technologies Inc. Techniques for accessing column selecting shift register with skipped entries in non-volatile memories
US8638608B2 (en) 2012-03-26 2014-01-28 Sandisk Technologies Inc. Selected word line dependent select gate voltage during program
US8804430B2 (en) 2012-03-26 2014-08-12 Sandisk Technologies Inc. Selected word line dependent select gate diffusion region voltage during programming
US8804425B2 (en) 2012-03-26 2014-08-12 Sandisk Technologies Inc. Selected word line dependent programming voltage
US8681548B2 (en) 2012-05-03 2014-03-25 Sandisk Technologies Inc. Column redundancy circuitry for non-volatile memory
US8937837B2 (en) 2012-05-08 2015-01-20 Sandisk Technologies Inc. Bit line BL isolation scheme during erase operation for non-volatile storage
US8976594B2 (en) 2012-05-15 2015-03-10 Micron Technology, Inc. Memory read apparatus and methods
US9064551B2 (en) 2012-05-15 2015-06-23 Micron Technology, Inc. Apparatuses and methods for coupling load current to a common source
US9323608B2 (en) * 2012-06-07 2016-04-26 Micron Technology, Inc. Integrity of a data bus
US9142305B2 (en) 2012-06-28 2015-09-22 Sandisk Technologies Inc. System to reduce stress on word line select transistor during erase operation
US8566671B1 (en) 2012-06-29 2013-10-22 Sandisk Technologies Inc. Configurable accelerated post-write read to manage errors
US9053819B2 (en) 2012-07-11 2015-06-09 Sandisk Technologies Inc. Programming method to tighten threshold voltage width with avoiding program disturb
US9036417B2 (en) 2012-09-06 2015-05-19 Sandisk Technologies Inc. On chip dynamic read level scan and error detection for nonvolatile storage
US20140071761A1 (en) 2012-09-10 2014-03-13 Sandisk Technologies Inc. Non-volatile storage with joint hard bit and soft bit reading
US8897080B2 (en) 2012-09-28 2014-11-25 Sandisk Technologies Inc. Variable rate serial to parallel shift register
US9490035B2 (en) 2012-09-28 2016-11-08 SanDisk Technologies, Inc. Centralized variable rate serializer and deserializer for bad column management
US9076506B2 (en) 2012-09-28 2015-07-07 Sandisk Technologies Inc. Variable rate parallel to serial shift register
US20140108705A1 (en) 2012-10-12 2014-04-17 Sandisk Technologies Inc. Use of High Endurance Non-Volatile Memory for Read Acceleration
CN103778965B (zh) * 2012-10-18 2016-08-03 宜扬科技股份有限公司 非挥发性存储装置中的毁损位线地址的取得方法
US9159406B2 (en) 2012-11-02 2015-10-13 Sandisk Technologies Inc. Single-level cell endurance improvement with pre-defined blocks
US9087601B2 (en) 2012-12-06 2015-07-21 Sandisk Technologies Inc. Select gate bias during program of non-volatile storage
US9064577B2 (en) 2012-12-06 2015-06-23 Micron Technology, Inc. Apparatuses and methods to control body potential in memory operations
US9123577B2 (en) 2012-12-12 2015-09-01 Sandisk Technologies Inc. Air gap isolation in non-volatile memory using sacrificial films
US9076545B2 (en) 2013-01-17 2015-07-07 Sandisk Tecnologies Inc. Dynamic adjustment of read voltage levels based on memory cell threshold voltage distribution
US9026757B2 (en) 2013-01-25 2015-05-05 Sandisk Technologies Inc. Non-volatile memory programming data preservation
US8913428B2 (en) 2013-01-25 2014-12-16 Sandisk Technologies Inc. Programming non-volatile storage system with multiple memory die
US8885416B2 (en) 2013-01-30 2014-11-11 Sandisk Technologies Inc. Bit line current trip point modulation for reading nonvolatile storage elements
US8971128B2 (en) 2013-01-31 2015-03-03 Sandisk Technologies Inc. Adaptive initial program voltage for non-volatile memory
WO2014124324A1 (en) 2013-02-08 2014-08-14 Sandisk Technologies Inc. Non-volatile memory including bit line switch transistors formed in a triple-well
WO2014137928A2 (en) 2013-03-04 2014-09-12 Sandisk Technologies Inc. Dynamic erase depth for improved endurance of non-volatile memory
US9349452B2 (en) 2013-03-07 2016-05-24 Sandisk Technologies Inc. Hybrid non-volatile memory cells for shared bit line
US9165656B2 (en) 2013-03-11 2015-10-20 Sandisk Technologies Inc. Non-volatile storage with shared bit lines and flat memory cells
JP2014179151A (ja) * 2013-03-15 2014-09-25 Toshiba Corp 半導体記憶装置
US8988947B2 (en) 2013-03-25 2015-03-24 Sandisk Technologies Inc. Back bias during program verify of non-volatile storage
US9224746B2 (en) 2013-05-21 2015-12-29 Sandisk Technologies Inc. Inverted-T word line and formation for non-volatile storage
US9177663B2 (en) 2013-07-18 2015-11-03 Sandisk Technologies Inc. Dynamic regulation of memory array source line
TWI514393B (zh) * 2013-08-07 2015-12-21 Winbond Electronics Corp 非揮發性記憶體系統及偏壓非揮發性記憶體的方法
CN104425030B (zh) * 2013-08-20 2018-04-03 华邦电子股份有限公司 非易失性存储器系统及偏压非易失性存储器的方法
IN2014CH00519A (de) 2013-12-02 2015-06-12 Sandisk Technologies Inc
US9213601B2 (en) 2013-12-03 2015-12-15 Sandisk Technologies Inc. Adaptive data re-compaction after post-write read verification operations
KR102128825B1 (ko) 2013-12-11 2020-07-01 삼성전자주식회사 불휘발성 메모리 장치 및 그것의 동작 방법
US9129701B2 (en) 2013-12-19 2015-09-08 Sandisk Technologies Inc. Asymmetric state detection for non-volatile storage
US9349740B2 (en) 2014-01-24 2016-05-24 Sandisk Technologies Inc. Non-volatile storage element with suspended charge storage region
US9368224B2 (en) 2014-02-07 2016-06-14 SanDisk Technologies, Inc. Self-adjusting regulation current for memory array source line
JP5946483B2 (ja) * 2014-02-12 2016-07-06 ウィンボンド エレクトロニクス コーポレーション カレントセンシング
US9337085B2 (en) 2014-02-12 2016-05-10 Sandisk Technologies Inc. Air gap formation between bit lines with side protection
CN103886906B (zh) * 2014-03-20 2017-01-25 上海华力微电子有限公司 读取非易失性存储器电流的方法及获取电流分布状态的方法
US9934872B2 (en) 2014-10-30 2018-04-03 Sandisk Technologies Llc Erase stress and delta erase loop count methods for various fail modes in non-volatile memory
US9224502B1 (en) 2015-01-14 2015-12-29 Sandisk Technologies Inc. Techniques for detection and treating memory hole to local interconnect marginality defects
US10032524B2 (en) 2015-02-09 2018-07-24 Sandisk Technologies Llc Techniques for determining local interconnect defects
US9564219B2 (en) 2015-04-08 2017-02-07 Sandisk Technologies Llc Current based detection and recording of memory hole-interconnect spacing defects
US9269446B1 (en) 2015-04-08 2016-02-23 Sandisk Technologies Inc. Methods to improve programming of slow cells
US9589634B1 (en) 2016-03-31 2017-03-07 Intel Corporation Techniques to mitigate bias drift for a memory device
US10248499B2 (en) 2016-06-24 2019-04-02 Sandisk Technologies Llc Non-volatile storage system using two pass programming with bit error control
KR20180036880A (ko) * 2016-09-30 2018-04-10 삼성전자주식회사 트립 전압의 변화를 보상하는 메모리 장치 및 그것의 읽기 방법
CN106960686B (zh) * 2017-03-31 2020-08-28 中国科学院微电子研究所 一种读取方法及闪存存储器装置
US10176880B1 (en) 2017-07-01 2019-01-08 Intel Corporation Selective body reset operation for three dimensional (3D) NAND memory
TWI640011B (zh) 2017-10-18 2018-11-01 力晶科技股份有限公司 非揮發性記憶體裝置及對其驗證的錯誤補償方法
US10134474B1 (en) 2017-10-20 2018-11-20 Sandisk Technologies Llc Independent state completion for each plane during flash memory programming
US10304550B1 (en) 2017-11-29 2019-05-28 Sandisk Technologies Llc Sense amplifier with negative threshold sensing for non-volatile memory
US10446239B1 (en) * 2018-07-11 2019-10-15 Globalfoundries Inc. Memory array including distributed reference cells for current sensing
US10643695B1 (en) 2019-01-10 2020-05-05 Sandisk Technologies Llc Concurrent multi-state program verify for non-volatile memory
US11024392B1 (en) 2019-12-23 2021-06-01 Sandisk Technologies Llc Sense amplifier for bidirectional sensing of memory cells of a non-volatile memory
CN113821156A (zh) 2020-06-18 2021-12-21 桑迪士克科技有限责任公司 前瞻识别潜在不可校正的误差校正存储器单元和现场对策
US11568943B2 (en) 2020-11-24 2023-01-31 Sandisk Technologies Llc Memory apparatus and method of operation using zero pulse smart verify
US11342035B1 (en) 2020-11-24 2022-05-24 Sandisk Technologies Llc Memory apparatus and method of operation using one pulse smart verify
US11636905B2 (en) 2020-12-07 2023-04-25 Sandisk Technologies Llc Temperature compensation for unselected sub-block inhibit bias for mitigating erase disturb
US11557358B2 (en) 2021-04-15 2023-01-17 Sandisk Technologies Llc Memory apparatus and method of operation using adaptive erase time compensation for segmented erase
CN117074836B (zh) * 2023-10-12 2024-03-12 成都明夷电子科技有限公司 一种激光器检测方法、检测器、电子设备及存储介质

Family Cites Families (90)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US594972A (en) * 1897-12-07 Mill for cutting grain
IT1224062B (it) 1979-09-28 1990-09-26 Ates Componenti Elettron Metodo di programmazione per una memoria a semiconduttore non volatile elettricamente alterabile
US4785427A (en) 1987-01-28 1988-11-15 Cypress Semiconductor Corporation Differential bit line clamp
JPH01143094A (ja) 1987-11-28 1989-06-05 Mitsubishi Electric Corp 半導体記憶装置
JPH07120720B2 (ja) 1987-12-17 1995-12-20 三菱電機株式会社 不揮発性半導体記憶装置
US5093806A (en) 1988-02-16 1992-03-03 Tran Hiep V Sensing and decoding scheme for a bicmos read/write memory
US5095344A (en) 1988-06-08 1992-03-10 Eliyahou Harari Highly compact eprom and flash eeprom devices
US5070032A (en) 1989-03-15 1991-12-03 Sundisk Corporation Method of making dense flash eeprom semiconductor memory structures
US5172338B1 (en) 1989-04-13 1997-07-08 Sandisk Corp Multi-state eeprom read and write circuits and techniques
DE69033438T2 (de) 1989-04-13 2000-07-06 Sandisk Corp Austausch von fehlerhaften Speicherzellen einer EEprommatritze
US5241494A (en) * 1990-09-26 1993-08-31 Information Storage Devices Integrated circuit system for analog signal recording and playback
JP2646850B2 (ja) 1990-11-30 1997-08-27 日本電気株式会社 半導体メモリ回路
US5343063A (en) 1990-12-18 1994-08-30 Sundisk Corporation Dense vertical programmable read only memory cell structure and processes for making them
US5490107A (en) * 1991-12-27 1996-02-06 Fujitsu Limited Nonvolatile semiconductor memory
US6222762B1 (en) 1992-01-14 2001-04-24 Sandisk Corporation Multi-state memory
US5313421A (en) 1992-01-14 1994-05-17 Sundisk Corporation EEPROM with split gate source side injection
US5315541A (en) 1992-07-24 1994-05-24 Sundisk Corporation Segmented column memory array
US5555204A (en) 1993-06-29 1996-09-10 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device
JP3397404B2 (ja) 1993-08-09 2003-04-14 株式会社日立製作所 半導体記憶装置
KR0169267B1 (ko) 1993-09-21 1999-02-01 사토 후미오 불휘발성 반도체 기억장치
US5555203A (en) 1993-12-28 1996-09-10 Kabushiki Kaisha Toshiba Dynamic semiconductor memory device
US5574880A (en) 1994-03-11 1996-11-12 Intel Corporation Mechanism for performing wrap-around reads during split-wordline reads
US5661053A (en) 1994-05-25 1997-08-26 Sandisk Corporation Method of making dense flash EEPROM cell array and peripheral supporting circuits formed in deposited field oxide with the use of spacers
US5444656A (en) * 1994-06-02 1995-08-22 Intel Corporation Apparatus for fast internal reference cell trimming
US5680347A (en) 1994-06-29 1997-10-21 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device
JPH08147965A (ja) 1994-11-15 1996-06-07 Toshiba Corp 半導体記憶装置
DE69615483T2 (de) * 1995-06-13 2002-05-29 Samsung Electronics Co Ltd Leseverstärkerschaltung einer nichtflüchtigen Halbleiterspeicheranordnung
JPH097373A (ja) 1995-06-20 1997-01-10 Oki Electric Ind Co Ltd 半導体記憶装置
JP3941149B2 (ja) 1996-12-03 2007-07-04 ソニー株式会社 半導体不揮発性記憶装置
JP3008843B2 (ja) * 1996-02-28 2000-02-14 日本電気株式会社 半導体記憶装置
US5903495A (en) 1996-03-18 1999-05-11 Kabushiki Kaisha Toshiba Semiconductor device and memory system
US5860082A (en) 1996-03-28 1999-01-12 Datalight, Inc. Method and apparatus for allocating storage in a flash memory
JPH09270195A (ja) * 1996-04-02 1997-10-14 Sharp Corp 半導体記憶装置
US5768192A (en) 1996-07-23 1998-06-16 Saifun Semiconductors, Ltd. Non-volatile semiconductor memory cell utilizing asymmetrical charge trapping
US6062270A (en) 1997-01-27 2000-05-16 Lindab Ab Double-walled structure in a ventilation duct system
JPH11167800A (ja) 1997-12-04 1999-06-22 Toshiba Corp 半導体記憶装置
US6097638A (en) 1997-02-12 2000-08-01 Kabushiki Kaisha Toshiba Semiconductor memory device
KR100272037B1 (ko) 1997-02-27 2000-12-01 니시무로 타이죠 불휘발성 반도체 기억 장치
US5872739A (en) 1997-04-17 1999-02-16 Radiant Technologies Sense amplifier for low read-voltage memory cells
JP3592887B2 (ja) 1997-04-30 2004-11-24 株式会社東芝 不揮発性半導体記憶装置
JP3494849B2 (ja) * 1997-05-29 2004-02-09 富士通株式会社 半導体記憶装置のデータ読み出し方法、半導体記憶装置及び半導体記憶装置の制御装置
JP3557078B2 (ja) 1997-06-27 2004-08-25 株式会社東芝 不揮発性半導体記憶装置
US6768165B1 (en) 1997-08-01 2004-07-27 Saifun Semiconductors Ltd. Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping
JP3486079B2 (ja) 1997-09-18 2004-01-13 株式会社東芝 半導体記憶装置
KR100282707B1 (ko) 1997-12-29 2001-02-15 윤종용 멀티-비트 데이터를 저장하는 반도체 메모리 장치 (semiconductor memory device for storing a multi-bit data)
KR100297602B1 (ko) 1997-12-31 2001-08-07 윤종용 비휘발성메모리장치의프로그램방법
KR100339023B1 (ko) 1998-03-28 2002-09-18 주식회사 하이닉스반도체 문턱전압을조절할수있는플래쉬메모리장치의센싱회로
US6260104B1 (en) * 1998-06-30 2001-07-10 Micron Technology, Inc. Multiplexing of trim outputs on a trim bus to reduce die size
JP3366264B2 (ja) * 1998-09-28 2003-01-14 エヌイーシーマイクロシステム株式会社 不揮発性メモリ、メモリ検査方法
US5949720A (en) 1998-10-30 1999-09-07 Stmicroelectronics, Inc. Voltage clamping method and apparatus for dynamic random access memory devices
JP3540640B2 (ja) 1998-12-22 2004-07-07 株式会社東芝 不揮発性半導体記憶装置
US6469955B1 (en) 2000-11-21 2002-10-22 Integrated Memory Technologies, Inc. Integrated circuit memory device having interleaved read and program capabilities and methods of operating same
US6282145B1 (en) 1999-01-14 2001-08-28 Silicon Storage Technology, Inc. Array architecture and operating methods for digital multilevel nonvolatile memory integrated circuit system
JP2000243085A (ja) 1999-02-22 2000-09-08 Hitachi Ltd 半導体装置
JP3783152B2 (ja) 1999-08-16 2006-06-07 Ｎｅｃエレクトロニクス株式会社 多値不揮発性半導体メモリ
JP3559732B2 (ja) * 1999-09-06 2004-09-02 Ｎｅｃエレクトロニクス株式会社 半導体記憶装置
JP3863330B2 (ja) 1999-09-28 2006-12-27 株式会社東芝 不揮発性半導体メモリ
JP2001184881A (ja) 1999-12-28 2001-07-06 Toshiba Corp 不揮発性半導体メモリの読み出し回路
JP3983969B2 (ja) 2000-03-08 2007-09-26 株式会社東芝 不揮発性半導体記憶装置
US6504757B1 (en) 2000-08-11 2003-01-07 Advanced Micro Devices, Inc. Double boosting scheme for NAND to improve program inhibit characteristics
JP2002100192A (ja) 2000-09-22 2002-04-05 Toshiba Corp 不揮発性半導体メモリ
KR20020028330A (ko) * 2000-10-09 2002-04-17 박종섭 포스트 프로그램 회로
US6717851B2 (en) 2000-10-31 2004-04-06 Sandisk Corporation Method of reducing disturbs in non-volatile memory
FR2816751A1 (fr) 2000-11-15 2002-05-17 St Microelectronics Sa Memoire flash effacable par page
KR100381956B1 (ko) 2001-02-02 2003-04-26 삼성전자주식회사 플래시 메모리 장치의 감지 증폭 회로
US6407953B1 (en) 2001-02-02 2002-06-18 Matrix Semiconductor, Inc. Memory array organization and related test method particularly well suited for integrated circuits having write-once memory arrays
NO312928B1 (no) 2001-02-26 2002-07-15 Thin Film Electronics Asa Ikke-destruktiv utlesing
US6738289B2 (en) 2001-02-26 2004-05-18 Sandisk Corporation Non-volatile memory with improved programming and method therefor
US6307783B1 (en) * 2001-02-26 2001-10-23 Advanced Micro Devices, Inc. Descending staircase read technique for a multilevel cell NAND flash memory device
JP3957985B2 (ja) 2001-03-06 2007-08-15 株式会社東芝 不揮発性半導体記憶装置
IL148959A (en) * 2001-04-05 2006-09-05 Saifun Semiconductors Ltd Architecture and scheme for a non-strobed read sequence
US6535434B2 (en) 2001-04-05 2003-03-18 Saifun Semiconductors Ltd. Architecture and scheme for a non-strobed read sequence
US6522592B2 (en) 2001-04-19 2003-02-18 Micron Technology, Inc. Sense amplifier for reduction of access device leakage
US6570810B2 (en) 2001-04-20 2003-05-27 Multi Level Memory Technology Contactless flash memory with buried diffusion bit/virtual ground lines
US6747899B2 (en) 2001-05-14 2004-06-08 Nexflash Technologies, Inc. Method and apparatus for multiple byte or page mode programming of a flash memory array
KR100439045B1 (ko) 2001-06-29 2004-07-05 주식회사 하이닉스반도체 워드 라인 전압 클램핑 회로
JP4454896B2 (ja) 2001-09-27 2010-04-21 シャープ株式会社 仮想接地型不揮発性半導体記憶装置
DE10154613B4 (de) 2001-11-07 2006-11-23 Infineon Technologies Ag Verfahren zum Vorladen von Speicherzellen eines dynamischen Halbleiterspeichers beim Power Up sowie Halbleiterspeicher
US6751129B1 (en) 2002-05-21 2004-06-15 Sandisk Corporation Efficient read, write methods for multi-state memory
US7324393B2 (en) 2002-09-24 2008-01-29 Sandisk Corporation Method for compensated sensing in non-volatile memory
US7443757B2 (en) 2002-09-24 2008-10-28 Sandisk Corporation Non-volatile memory and method with reduced bit line crosstalk errors
US7327619B2 (en) 2002-09-24 2008-02-05 Sandisk Corporation Reference sense amplifier for non-volatile memory
EP1543529B1 (de) 2002-09-24 2009-11-04 SanDisk Corporation Nichtflüchtiger speicher und ausleseverfahren
US6987693B2 (en) 2002-09-24 2006-01-17 Sandisk Corporation Non-volatile memory and method with reduced neighboring field errors
US7046568B2 (en) 2002-09-24 2006-05-16 Sandisk Corporation Memory sensing circuit and method for low voltage operation
US6983428B2 (en) 2002-09-24 2006-01-03 Sandisk Corporation Highly compact non-volatile memory and method thereof
US7196931B2 (en) 2002-09-24 2007-03-27 Sandisk Corporation Non-volatile memory and method with reduced source line bias errors
DE60317768T2 (de) 2003-04-10 2008-11-27 Stmicroelectronics S.R.L., Agrate Brianza Verfahren zum Auslesen einer nichtflüchtigen Speichervorrichtung und zugehörige Vorrichtung
US7064980B2 (en) 2003-09-17 2006-06-20 Sandisk Corporation Non-volatile memory and method with bit line coupled compensation
US6956770B2 (en) 2003-09-17 2005-10-18 Sandisk Corporation Non-volatile memory and method with bit line compensation dependent on neighboring operating modes

Also Published As

Publication number Publication date
US20040057287A1 (en) 2004-03-25
US7196931B2 (en) 2007-03-27
EP1610335A2 (de) 2005-12-28
TWI315525B (en) 2009-10-01
EP1610335B1 (de) 2011-11-09
US7023736B2 (en) 2006-04-04
US20070109847A1 (en) 2007-05-17
EP1610335A3 (de) 2008-08-06
US7551484B2 (en) 2009-06-23
CN101084556B (zh) 2010-05-05
CN101615428A (zh) 2009-12-30
CN101615428B (zh) 2014-04-23
US7428171B2 (en) 2008-09-23
CN101084556A (zh) 2007-12-05
TW200419579A (en) 2004-10-01
ATE447761T1 (de) 2009-11-15
ATE533160T1 (de) 2011-11-15
US20070109889A1 (en) 2007-05-17
US20040109357A1 (en) 2004-06-10

Similar Documents

Publication Publication Date Title
DE60329924D1 (de) Nichtflüchtiger speicher und ausleseverfahren
DE502005009419D1 (de) Aktor mit speicherteil für gebäudemanagementsystem
TW200746144A (en) Calibration system for writing and reading multiple states into phase change memory
DE602006019253D1 (de) Nichtflüchtige speicherzelle mit einem schaltbaren widerstand und transistor
GB2432945A (en) Command controlling different operations in different chips
ATE450926T1 (de) Automatische lautstärkenregelung
ATE488009T1 (de) Flash-speichersystem-steuerverfahren
WO2006041520A3 (en) De-coupled memory access system and method
DE60132382D1 (de) Multiportspeicher auf Basis von DRAM
TW200638425A (en) Nonvolatile memory devices that support virtual page storage using odd-state memory cells and methods of programming same
ATE524810T1 (de) Speicheridentifizierung
DE60223440D1 (de) Magnetoresistives Element, Speicherelement mit solchem magnetoresistivem Element, und Speicher unter Verwendung eines solchen Speicherelements
AU2002240742A1 (en) Apparatus for variable word length computing in an array processor
DE602005017923D1 (de) Schreibschutz durch verwendung eines zweisignal-stlement mit parameteränderungsfähigkeit, chipauswahl und wählbares schreiben in nichtflüchtigem speicher
DE69827109D1 (de) Abfühlverstärker für nichtflüchtigen Speicher mit niedriger Spannung
EP1696331A3 (de) Steuerungssystem mit nicht-volatilem Festkörperspeicher zur Erhöhung der Zuverlässigkeit
WO2003046922A3 (de) Halbleiteranordnung mit transistoren auf basis organischer halbleiter und nichtflüchtiger schreib-lese-speicherzellen
DE60327551D1 (de) Programmierbare nichtflüchtige halbleiterspeicheranordnung
ATE426899T1 (de) Mehrfachwortleitungszugriff und zugriffsvorrichtung
DE60314287D1 (de) Nichtflüchtiger speicher und schreibverfahren dafür
TW200721193A (en) Memory device input buffer, related memory device, controller and system
ATE475182T1 (de) Schaltung zum zugreifen auf ein chalcogenid- speicherarray
DE50114518D1 (de) Integrierter Speicher mit Zeilenzugriffsteuerung zur Aktivierung und Deaktivierung von Zeilenleitungen
KR920018752A (ko) 반도체 기억장치
BR9810100A (pt) Circuito de comando para uma disposição de memórias-semicondutores não-voláteis

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
R082 Change of representative

Ref document number: 1543529

Country of ref document: EP

Representative=s name: MARKS & CLERK (LUXEMBOURG) LLP, LU