DE60330130D1 - Elektrisch löschbare und programmiebare nichtflüchtige halbleiterspeicheranordnung mit einschichtigem gatematerial und entsprechende speicherfläche - Google Patents

Elektrisch löschbare und programmiebare nichtflüchtige halbleiterspeicheranordnung mit einschichtigem gatematerial und entsprechende speicherfläche

Info

Publication number
DE60330130D1
DE60330130D1 DE60330130T DE60330130T DE60330130D1 DE 60330130 D1 DE60330130 D1 DE 60330130D1 DE 60330130 T DE60330130 T DE 60330130T DE 60330130 T DE60330130 T DE 60330130T DE 60330130 D1 DE60330130 D1 DE 60330130D1
Authority
DE
Germany
Prior art keywords
gate
transistor
zone
memory cell
active
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60330130T
Other languages
English (en)
Inventor
Philippe Gendrier
Cyrille Dray
Richard Fournel
Sebastien Poirier
Daniel Caspar
Philippe Candelier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from FR0204690A external-priority patent/FR2838563B1/fr
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Application granted granted Critical
Publication of DE60330130D1 publication Critical patent/DE60330130D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/60—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the control gate being a doped region, e.g. single-poly memory cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
DE60330130T 2002-04-15 2003-01-31 Elektrisch löschbare und programmiebare nichtflüchtige halbleiterspeicheranordnung mit einschichtigem gatematerial und entsprechende speicherfläche Expired - Lifetime DE60330130D1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR0204690A FR2838563B1 (fr) 2002-04-15 2002-04-15 Dispositif semiconducteur de memoire, non volatile, programmable et effacable electriquement, a une seule couche de materiau de grille
FR0209454A FR2838554B1 (fr) 2002-04-15 2002-07-25 Dispositif semiconducteur de memoire, non volatile, programmable et effacable electriquement, a une seule couche de materiau de grille, et plan memoire correspondant
PCT/FR2003/000311 WO2003088366A1 (fr) 2002-04-15 2003-01-31 Dispositif semiconducteur de memoire, non volatile, programmable et effacable electriquement, a une seule couche de materiau de grille, et plan memoire correspondant

Publications (1)

Publication Number Publication Date
DE60330130D1 true DE60330130D1 (de) 2009-12-31

Family

ID=28676465

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60330130T Expired - Lifetime DE60330130D1 (de) 2002-04-15 2003-01-31 Elektrisch löschbare und programmiebare nichtflüchtige halbleiterspeicheranordnung mit einschichtigem gatematerial und entsprechende speicherfläche

Country Status (7)

Country Link
US (1) US7333362B2 (de)
EP (1) EP1495496B1 (de)
JP (1) JP4662529B2 (de)
AT (1) ATE449424T1 (de)
DE (1) DE60330130D1 (de)
FR (1) FR2838554B1 (de)
WO (1) WO2003088366A1 (de)

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TWI231039B (en) * 2004-04-30 2005-04-11 Yield Microelectronics Corp Non-volatile memory and its operational method
GB0415995D0 (en) 2004-07-16 2004-08-18 Song Aimin Memory array
JP4881552B2 (ja) * 2004-09-09 2012-02-22 ルネサスエレクトロニクス株式会社 半導体装置
JP2006202834A (ja) * 2005-01-18 2006-08-03 Seiko Epson Corp 半導体記憶装置および半導体記憶装置の製造方法
US7402874B2 (en) * 2005-04-29 2008-07-22 Texas Instruments Incorporated One time programmable EPROM fabrication in STI CMOS technology
JP2006344735A (ja) * 2005-06-08 2006-12-21 Seiko Epson Corp 半導体装置
FR2891398A1 (fr) * 2005-09-23 2007-03-30 St Microelectronics Sa Memoire non volatile reprogrammable
JP2007149947A (ja) * 2005-11-28 2007-06-14 Nec Electronics Corp 不揮発性メモリセル及びｅｅｐｒｏｍ
JP4435095B2 (ja) * 2006-01-04 2010-03-17 株式会社東芝 半導体システム
US20070247915A1 (en) * 2006-04-21 2007-10-25 Intersil Americas Inc. Multiple time programmable (MTP) PMOS floating gate-based non-volatile memory device for a general-purpose CMOS technology with thick gate oxide
US7759727B2 (en) 2006-08-21 2010-07-20 Intersil Americas Inc. Method and apparatus for shielding tunneling circuit and floating gate for integration of a floating gate voltage reference in a general purpose CMOS technology
JP4282705B2 (ja) * 2006-09-28 2009-06-24 株式会社東芝 エージングデバイス及びその製造方法
ES2322418B1 (es) * 2006-10-02 2010-03-22 Universidad De Almeria Sistema de coexpresion enzimatica para la produccion de d-aminoacidos.
US7663173B1 (en) * 2007-01-12 2010-02-16 National Semiconductor Corporation Non-volatile memory cell with poly filled trench as control gate and fully isolated substrate as charge storage
US7808034B1 (en) * 2007-01-12 2010-10-05 National Semiconductor Corporation Non-volatile memory cell with fully isolated substrate as charge storage
US7903465B2 (en) * 2007-04-24 2011-03-08 Intersil Americas Inc. Memory array of floating gate-based non-volatile memory cells
US7688627B2 (en) * 2007-04-24 2010-03-30 Intersil Americas Inc. Flash memory array of floating gate-based non-volatile memory cells
US8339862B2 (en) * 2007-12-25 2012-12-25 Genusion, Inc. Nonvolatile semiconductor memory device
WO2009123203A1 (ja) * 2008-04-02 2009-10-08 シャープ株式会社 不揮発性半導体記憶装置
TWI416713B (zh) * 2008-09-30 2013-11-21 國立大學法人九州工業大學 Floating Gate Type Nonvolatile Memory Configuration
US7983081B2 (en) * 2008-12-14 2011-07-19 Chip.Memory Technology, Inc. Non-volatile memory apparatus and method with deep N-well
US9324866B2 (en) 2012-01-23 2016-04-26 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and method for transistor with line end extension
JP5856836B2 (ja) * 2011-12-16 2016-02-10 セイコーインスツル株式会社 不揮発性半導体記憶装置
JP2013187534A (ja) * 2012-03-08 2013-09-19 Ememory Technology Inc 消去可能プログラマブル単一ポリ不揮発性メモリ
EP2639816B1 (de) * 2012-03-12 2019-09-18 eMemory Technology Inc. Verfahren zum Herstellen einer Floating-gate-Speichervorrichtung mit einer einzelnen Polysiliziumschicht
CN102723333B (zh) * 2012-07-11 2014-09-03 无锡来燕微电子有限公司 一种具有p+浮栅电极的非挥发性记忆体及其制备方法
KR102166525B1 (ko) * 2014-04-18 2020-10-15 에스케이하이닉스 주식회사 단일층의 게이트를 갖는 불휘발성 메모리소자 및 그 동작방법과, 이를 이용한 메모리 셀어레이
CN108257963A (zh) * 2016-12-29 2018-07-06 北京同方微电子有限公司 一种闪存存储单元

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JP2677327B2 (ja) * 1988-07-11 1997-11-17 株式会社日立製作所 半導体装置
JPH03179780A (ja) * 1989-12-07 1991-08-05 Fujitsu Ltd 半導体装置
US5712180A (en) * 1992-01-14 1998-01-27 Sundisk Corporation EEPROM with split gate source side injection
JP2596695B2 (ja) * 1993-05-07 1997-04-02 インターナショナル・ビジネス・マシーンズ・コーポレイション Ｅｅｐｒｏｍ
JPH06334194A (ja) * 1993-05-25 1994-12-02 Fuji Electric Co Ltd 不揮発性半導体メモリ
JPH07183410A (ja) * 1993-12-24 1995-07-21 Mitsubishi Electric Corp 不揮発性半導体記憶装置
US5761121A (en) * 1996-10-31 1998-06-02 Programmable Microelectronics Corporation PMOS single-poly non-volatile memory structure
US5892709A (en) * 1997-05-09 1999-04-06 Motorola, Inc. Single level gate nonvolatile memory device and method for accessing the same
US6936849B1 (en) * 1997-07-29 2005-08-30 Micron Technology, Inc. Silicon carbide gate transistor
US6243289B1 (en) * 1998-04-08 2001-06-05 Micron Technology Inc. Dual floating gate programmable read only memory cell structure and method for its fabrication and operation
EP0975022A1 (de) * 1998-07-22 2000-01-26 STMicroelectronics S.r.l. Herstellungsverfahren für elektronische Bauelemente mit Festwertspeicherzellen und Niederspannungstransistoren, die selbstjustierte Silizidübergänge aufweisen
US6025625A (en) * 1999-02-25 2000-02-15 Worldwide Semiconductor Manufacturing Corporation Single-poly EEPROM cell structure operations and array architecture
KR100665413B1 (ko) * 1999-03-31 2007-01-04 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 반도체 디바이스
US6559007B1 (en) * 2000-04-06 2003-05-06 Micron Technology, Inc. Method for forming flash memory device having a tunnel dielectric comprising nitrided oxide
EP1402536B1 (de) * 2001-07-02 2006-06-14 Infineon Technologies AG Ladungsgekoppelte eeprom anordnung und dazugehöriges betriebsverfahren
US6700154B1 (en) * 2002-09-20 2004-03-02 Lattice Semiconductor Corporation EEPROM cell with trench coupling capacitor
JP4390480B2 (ja) * 2003-06-04 2009-12-24 パナソニック株式会社 不揮発性半導体記憶装置

Also Published As

Publication number Publication date
US7333362B2 (en) 2008-02-19
EP1495496A1 (de) 2005-01-12
FR2838554A1 (fr) 2003-10-17
JP4662529B2 (ja) 2011-03-30
JP2005522884A (ja) 2005-07-28
ATE449424T1 (de) 2009-12-15
FR2838554B1 (fr) 2004-07-09
WO2003088366A1 (fr) 2003-10-23
EP1495496B1 (de) 2009-11-18
US20050219912A1 (en) 2005-10-06

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