DE60335465D1 - Über den Inhalt anwählbare Speicherzelle - Google Patents

Über den Inhalt anwählbare Speicherzelle

Info

Publication number
DE60335465D1
DE60335465D1 DE60335465T DE60335465T DE60335465D1 DE 60335465 D1 DE60335465 D1 DE 60335465D1 DE 60335465 T DE60335465 T DE 60335465T DE 60335465 T DE60335465 T DE 60335465T DE 60335465 D1 DE60335465 D1 DE 60335465D1
Authority
DE
Germany
Prior art keywords
content
memory cell
selected via
cell
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60335465T
Other languages
English (en)
Inventor
Sandre Guido De
Roberto Bez
Fabio Pellizzer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Ovonyx Inc
Original Assignee
STMicroelectronics SRL
Ovonyx Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL, Ovonyx Inc filed Critical STMicroelectronics SRL
Application granted granted Critical
Publication of DE60335465D1 publication Critical patent/DE60335465D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
    • G11C15/04—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • G11C14/0054—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a SRAM cell
    • G11C14/009—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a SRAM cell and the nonvolatile element is a resistive RAM element, i.e. programmable resistors, e.g. formed of phase change or chalcogenide material
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
    • G11C15/04—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements
    • G11C15/046—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements using non-volatile storage elements
DE60335465T 2003-10-22 2003-10-22 Über den Inhalt anwählbare Speicherzelle Expired - Lifetime DE60335465D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP03103898A EP1526547B1 (de) 2003-10-22 2003-10-22 Über den Inhalt anwählbare Speicherzelle

Publications (1)

Publication Number Publication Date
DE60335465D1 true DE60335465D1 (de) 2011-02-03

Family

ID=34384685

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60335465T Expired - Lifetime DE60335465D1 (de) 2003-10-22 2003-10-22 Über den Inhalt anwählbare Speicherzelle

Country Status (3)

Country Link
US (1) US7227765B2 (de)
EP (2) EP2261928B1 (de)
DE (1) DE60335465D1 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7889544B2 (en) 2004-04-05 2011-02-15 Super Talent Electronics, Inc. High-speed controller for phase-change memory peripheral device
US7966429B2 (en) * 2007-05-28 2011-06-21 Super Talent Electronics, Inc. Peripheral devices using phase-change memory
US7471556B2 (en) * 2007-05-15 2008-12-30 Super Talent Electronics, Inc. Local bank write buffers for accelerating a phase-change memory
US7499303B2 (en) * 2004-09-24 2009-03-03 Integrated Device Technology, Inc. Binary and ternary non-volatile CAM
US7319608B2 (en) * 2005-06-30 2008-01-15 International Business Machines Corporation Non-volatile content addressable memory using phase-change-material memory elements
US7675765B2 (en) * 2005-11-03 2010-03-09 Agate Logic, Inc. Phase-change memory (PCM) based universal content-addressable memory (CAM) configured as binary/ternary CAM
US7505326B2 (en) 2006-10-31 2009-03-17 Atmel Corporation Programming pulse generator
US7417904B2 (en) 2006-10-31 2008-08-26 Atmel Corporation Adaptive gate voltage regulation
US20080270811A1 (en) * 2007-04-26 2008-10-30 Super Talent Electronics Inc. Fast Suspend-Resume of Computer Motherboard Using Phase-Change Memory
US7643334B1 (en) 2007-04-26 2010-01-05 Super Talent Electronics, Inc. High-speed controller for phase-change memory peripheral device
US7440316B1 (en) 2007-04-30 2008-10-21 Super Talent Electronics, Inc 8/9 and 8/10-bit encoding to reduce peak surge currents when writing phase-change memory
US7738274B1 (en) * 2007-10-15 2010-06-15 T-Ram Semiconductor, Inc. Content-addressable memory architecture
US8125829B2 (en) 2008-05-02 2012-02-28 Micron Technology, Inc. Biasing system and method
US7782646B2 (en) * 2008-06-30 2010-08-24 International Business Machines Corporation High density content addressable memory using phase change devices
US7881089B2 (en) 2009-02-24 2011-02-01 International Business Machines Corporation Coding techniques for improving the sense margin in content addressable memories
US8120937B2 (en) * 2009-03-06 2012-02-21 International Business Machines Corporation Ternary content addressable memory using phase change devices
US7872889B2 (en) 2009-04-21 2011-01-18 International Business Machines Corporation High density ternary content addressable memory
US8264862B2 (en) * 2010-11-24 2012-09-11 Lsi Corporation Low power SRAM based content addressable memory
JP5907524B2 (ja) * 2011-02-25 2016-04-26 国立大学法人東北大学 不揮発機能メモリ装置
US8908407B1 (en) * 2011-07-30 2014-12-09 Rambus Inc. Content addressable memory (“CAM”)
US9588908B2 (en) 2015-06-02 2017-03-07 Bertrand F. Cambou Memory circuit using resistive random access memory arrays in a secure element
KR102367338B1 (ko) * 2017-09-11 2022-02-25 삼성전자주식회사 Tcam 장치 및 그것의 동작 방법

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3544977A (en) * 1967-12-22 1970-12-01 Int Standard Electric Corp Associative memory matrix using series connected diodes having variable resistance values
EP0230304A3 (de) * 1986-01-21 1991-03-13 Energy Conversion Devices, Inc. Inhaltsadressierbarer Speicher
JPH0743946B2 (ja) * 1988-01-18 1995-05-15 三菱電機株式会社 不揮発性ｃａｍ
GB2230882B (en) * 1988-02-23 1992-04-22 Mitsubishi Electric Corp Content addressable memory device
US6317349B1 (en) 1999-04-16 2001-11-13 Sandisk Corporation Non-volatile content addressable memory
US6304477B1 (en) * 2001-01-31 2001-10-16 Motorola, Inc. Content addressable magnetic random access memory
US6560156B2 (en) * 2001-02-08 2003-05-06 Integrated Device Technology, Inc. CAM circuit with radiation resistance
EP1324345A1 (de) * 2001-12-27 2003-07-02 STMicroelectronics S.r.l. Nichtflüchtige Speicheranordnung mit einziger Speisespannung mit Kaskode-Spaltendekodiererung
US6909645B2 (en) * 2002-07-16 2005-06-21 Intel Corporation Cluster based redundancy scheme for semiconductor memories
US6868022B2 (en) * 2003-03-28 2005-03-15 Matrix Semiconductor, Inc. Redundant memory structure using bad bit pointers

Also Published As

Publication number Publication date
EP2261928A3 (de) 2011-04-20
US20060018183A1 (en) 2006-01-26
EP1526547A1 (de) 2005-04-27
EP2261928A2 (de) 2010-12-15
EP2261928B1 (de) 2012-09-05
US7227765B2 (en) 2007-06-05
EP1526547B1 (de) 2010-12-22

Similar Documents

Publication Publication Date Title
DE60335465D1 (de) Über den Inhalt anwählbare Speicherzelle
DE60336590D1 (de) Brennstoffzelle
DE602004023162D1 (de) Speicherkarte
FR2860504B1 (fr) Container
DK1675852T3 (da) Heterocykliske 7-amino-alkylidenyl-quinoloner og -naphthyridoner
DE602004008220D1 (de) Brennstoffzelle
ITMI20042462A1 (it) Memoria ausiliare
DE602004025608D1 (de) Brennstoffzelle
DE602004030501D1 (de) Brennstoffzelle
DE502004008433D1 (de) Wägezelle
DE602004009078D1 (de) Speicherordnung
DE602004028858D1 (de) Brennstoffzellenseparator
NL1027613A1 (nl) Geheugenmodule.
DE602004028560D1 (de) Externes speichergerät
DE602004006408D1 (de) Speicherzugriff
DE602005021192D1 (de) Vorbespielte flüchtige Speicherzelle
DE60322818D1 (de) Dreiphasenspeicherzelle
DE60316702D1 (de) Mehrport-speicherzellen
ES1056426Y (es) Tapon con cañita incorporada.
DE602004015288D1 (de) Mehrtor-Speicher
AT6273U3 (de) Behälter
ITRM20040542A1 (it) Memoria.
FI20031896A0 (fi) Kemiallinen parannus paperinvalmistuksessa
DOS2004000865S (es) Contenedor
DE50303191D1 (de) Lagereinrichtung