DE68920291T2 - Verfahren zum Herstellen von leitenden Bahnen und Stützen. - Google Patents

Verfahren zum Herstellen von leitenden Bahnen und Stützen.

Info

Publication number
DE68920291T2
DE68920291T2 DE68920291T DE68920291T DE68920291T2 DE 68920291 T2 DE68920291 T2 DE 68920291T2 DE 68920291 T DE68920291 T DE 68920291T DE 68920291 T DE68920291 T DE 68920291T DE 68920291 T2 DE68920291 T2 DE 68920291T2
Authority
DE
Germany
Prior art keywords
supports
conductive sheets
making conductive
making
sheets
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68920291T
Other languages
English (en)
Other versions
DE68920291D1 (de
Inventor
Nancy Ann Greco
Stephen Edward Greco
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE68920291D1 publication Critical patent/DE68920291D1/de
Publication of DE68920291T2 publication Critical patent/DE68920291T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76885—By forming conductive members before deposition of protective insulating material, e.g. pillars, studs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
    • H01L21/76813—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures involving a partial via etch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits
    • H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
    • H05K3/4647—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits by applying an insulating layer around previously made via studs
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/948—Radiation resist
DE68920291T 1988-11-22 1989-10-10 Verfahren zum Herstellen von leitenden Bahnen und Stützen. Expired - Fee Related DE68920291T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/274,895 US4997746A (en) 1988-11-22 1988-11-22 Method of forming conductive lines and studs

Publications (2)

Publication Number Publication Date
DE68920291D1 DE68920291D1 (de) 1995-02-09
DE68920291T2 true DE68920291T2 (de) 1995-07-06

Family

ID=23050059

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68920291T Expired - Fee Related DE68920291T2 (de) 1988-11-22 1989-10-10 Verfahren zum Herstellen von leitenden Bahnen und Stützen.

Country Status (4)

Country Link
US (1) US4997746A (de)
EP (1) EP0370935B1 (de)
JP (1) JPH0719780B2 (de)
DE (1) DE68920291T2 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0787189B2 (ja) * 1990-01-19 1995-09-20 松下電器産業株式会社 半導体装置の製造方法
US5091289A (en) * 1990-04-30 1992-02-25 International Business Machines Corporation Process for forming multi-level coplanar conductor/insulator films employing photosensitive polyimide polymer compositions
JP2519819B2 (ja) * 1990-05-09 1996-07-31 株式会社東芝 コンタクトホ―ルの形成方法
JP3245882B2 (ja) * 1990-10-24 2002-01-15 株式会社日立製作所 パターン形成方法、および投影露光装置
EP0486047B1 (de) * 1990-11-16 1999-09-01 Seiko Epson Corporation Verfahren zur Herstellung einer Dünnfilm-Halbleiteranordnung
US5175124A (en) * 1991-03-25 1992-12-29 Motorola, Inc. Process for fabricating a semiconductor device using re-ionized rinse water
US5283208A (en) * 1992-12-04 1994-02-01 International Business Machines Corporation Method of making a submicrometer local structure using an organic mandrel
US5869175A (en) * 1994-01-31 1999-02-09 Stmicroelectronics, Inc. Integrated circuit structure having two photoresist layers
US6576848B1 (en) 1996-11-22 2003-06-10 International Business Machines Corporation Integrated circuit chip wiring structure with crossover capability and method of manufacturing the same
US5818110A (en) * 1996-11-22 1998-10-06 International Business Machines Corporation Integrated circuit chip wiring structure with crossover capability and method of manufacturing the same
US6281585B1 (en) 1997-06-30 2001-08-28 Philips Electronics North America Corporation Air gap dielectric in self-aligned via structures
US6133635A (en) * 1997-06-30 2000-10-17 Philips Electronics North America Corp. Process for making self-aligned conductive via structures
US5972570A (en) * 1997-07-17 1999-10-26 International Business Machines Corporation Method of photolithographically defining three regions with one mask step and self aligned isolation structure formed thereby
US5981148A (en) * 1997-07-17 1999-11-09 International Business Machines Corporation Method for forming sidewall spacers using frequency doubling hybrid resist and device formed thereby
US6007968A (en) * 1997-10-29 1999-12-28 International Business Machines Corporation Method for forming features using frequency doubling hybrid resist and device formed thereby
TW383427B (en) * 1998-04-03 2000-03-01 United Microelectronics Corp Method for etching tantalum oxide
US6210866B1 (en) * 1998-05-04 2001-04-03 International Business Machines Corporation Method for forming features using self-trimming by selective etch and device formed thereby
US6355580B1 (en) * 1998-09-03 2002-03-12 Micron Technology, Inc. Ion-assisted oxidation methods and the resulting structures
US6503827B1 (en) 2000-06-28 2003-01-07 International Business Machines Corporation Method of reducing planarization defects
US8492267B1 (en) 2012-10-02 2013-07-23 International Business Machines Corporation Pillar interconnect chip to package and global wiring structure
US20220004103A1 (en) * 2018-11-16 2022-01-06 Lam Research Corporation Bubble defect reduction

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3930857A (en) * 1973-05-03 1976-01-06 International Business Machines Corporation Resist process
JPS5626450A (en) * 1979-08-13 1981-03-14 Hitachi Ltd Manufacture of semiconductor device
US4579812A (en) * 1984-02-03 1986-04-01 Advanced Micro Devices, Inc. Process for forming slots of different types in self-aligned relationship using a latent image mask
US4541893A (en) * 1984-05-15 1985-09-17 Advanced Micro Devices, Inc. Process for fabricating pedestal interconnections between conductive layers in an integrated circuit
US4614021A (en) * 1985-03-29 1986-09-30 Motorola, Inc. Pillar via process
JPS62100751A (ja) * 1985-10-24 1987-05-11 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 自己整合パタ−ンの形成方法
US4789648A (en) * 1985-10-28 1988-12-06 International Business Machines Corporation Method for producing coplanar multi-level metal/insulator films on a substrate and for forming patterned conductive lines simultaneously with stud vias
US4721689A (en) * 1986-08-28 1988-01-26 International Business Machines Corporation Method for simultaneously forming an interconnection level and via studs
US4767723A (en) * 1987-10-30 1988-08-30 International Business Machines Corporation Process for making self-aligning thin film transistors

Also Published As

Publication number Publication date
US4997746A (en) 1991-03-05
JPH0719780B2 (ja) 1995-03-06
EP0370935A2 (de) 1990-05-30
JPH02276248A (ja) 1990-11-13
EP0370935B1 (de) 1994-12-28
EP0370935A3 (de) 1991-04-10
DE68920291D1 (de) 1995-02-09

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee